Fabrication of Device-Quality Wide-Gap a-Si:H Films at Very Low Substrate Temperatures

1990 ◽  
Vol 192 ◽  
Author(s):  
Yoshihiro Hishikawa ◽  
Sadaji Tsuge ◽  
Noboru Nakamura ◽  
Shinya Tsuda ◽  
Shoichi Nakano ◽  
...  
Keyword(s):  
Deposition Rate ◽  
Light Exposure ◽  
Rf Plasma ◽  
Plasma Parameters ◽  
Solar Cell Performance ◽  
Capacitively Coupled ◽  
Bond Density ◽  
Deposition Parameters ◽  
Wide Gap ◽  
Substrate Temperatures

ABSTRACTWide-gap a-Si:H films with device quality (Tauc’s optical gap > 1.9eV, σph under AMI.5, 100mW/cm2 illumination ≥ 10−5, Ω−1cm−1, a σph/σ a≥106) have been fabricated. These films are deposited at low substrtate temperatures (TS≤80°C ) either by diluting SiH4 with H2 or optimizing the plasma parameters in a capacitively–coupled RF plasma–CVD reactor. Reduction in the SiH2 bond density and the ESR spin density are also observed. In this study, good film quality is always accompanied by a small deposition rate. Furthermore, σph is nearly the same if the deposition rate and Ts is the same, regardless of other deposition parameters. This suggests that the surface reactions or structural relaxations at the film-growing surface can produce high–quality a–Si:H films even at low TsS, if the deposition rate is low. Results in thermal annealing, light exposure, and solar cell performance confirm that these films have device quality and wide bandgap.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals Space and phase resolved plasma parameters in an industrial dual-frequency capacitively coupled radio-frequency discharge

2007 ◽  
Vol 40 (22) ◽  
pp. 7008-7018 ◽  
Author(s):  
J Schulze ◽  
T Gans ◽  
D O'Connell ◽  
U Czarnetzki ◽  
A R Ellingboe ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Dual Frequency ◽  
Plasma Parameters ◽  
Capacitively Coupled ◽  
Radio Frequency Discharge

scholarly journals Deposition Kinetics of Thin Silica-Like Coatings in a Large Plasma Reactor

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3238 ◽  
Author(s):  
Žiga Gosar ◽  
Denis Đonlagić ◽  
Simon Pevec ◽  
Janez Kovač ◽  
Miran Mozetič ◽  
...  
Keyword(s):  
Deposition Rate ◽  
Plasma Reactor ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Ion Density ◽  
Capacitively Coupled ◽  
Rotary Pumps ◽  
Kinetics Of ◽  
Radio Frequency Discharge ◽  
Deposited Films

An industrial size plasma reactor of 5 m3 volume was used to study the deposition of silica-like coatings by the plasma-enhanced chemical vapor deposition (PECVD) method. The plasma was sustained by an asymmetrical capacitively coupled radio-frequency discharge at a frequency of 40 kHz and power up to 7 kW. Hexamethyldisilioxane (HMDSO) was introduced continuously at different flows of up to 200 sccm upon pumping with a combination of roots and rotary pumps at an effective pumping speed between 25 and 70 L/s to enable suitable gas residence time in the plasma reactor. The deposition rate and ion density were measured continuously during the plasma process. Both parameters were almost perfectly constant with time, and the deposition rate increased linearly in the range of HMDSO flows from 25 to 160 sccm. The plasma density was of the order of 1014 m−3, indicating an extremely low ionization fraction which decreased with increasing flow from approximately 2 × 10−7 to 6 × 10−8. The correlations between the processing parameters and the properties of deposited films are drawn and discussed.

Single Wafer Amorphous Silicon Process Evaluation

1997 ◽  
Vol 467 ◽  
Author(s):  
David O'Meara ◽  
Chow Ling Chang ◽  
Roc Blumenthal ◽  
Rama I. Hegde ◽  
Lata Prabhu ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Morphology ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Cross Sections ◽  
Growth Conditions ◽  
Degree Of Crystallinity ◽  
Deposition Parameters ◽  
Before And After ◽  
Production Requirement

ABSTRACTSingle wafer amorphous silicon deposition was characterized through process modeling and film characterization for application in semiconductor production. DOE methodology was used to determine the main deposition parameters, and the responses were limited to device production requirement properties of surface roughness, deposition rate and degree of crystallinity of the as-deposited film. The data trends and models show that deposition temperature and silane flow are the main factors. Increasing either or both factor increases the deposition rate and the surface roughness. The surface morphology, evaluated by AFM, SEM and TEM, was found to be rougher at extreme growth conditions than the poly crystalline film formed after anneal. The as-deposited surface morphology was not a result of pre-anneal crystal formations as determined by TEM cross sections of samples before and after anneal. Lack of crystalinity is important for impurity diffusion considerations. Device application of the single wafer a-Si process will be a compromise between growth rate (and associated throughput) and surface roughness that can be tolerated.

Power absorption, plasma parameters and wave structure in inductive RF plasma source with low value external magnetic field

2020 ◽  
Vol 22 (11) ◽  
pp. 115404
Author(s):  
Elena KRALKINA ◽  
Konstantin VAVILIN ◽  
Ilya ZADIRIEV ◽  
Alexander NIKONOV
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Wave Structure ◽  
Plasma Source ◽  
Rf Plasma ◽  
Plasma Parameters ◽  
Power Absorption

Effect of RF plasma deposition parameters on Y1Ba2Cu3O7−x thin films

1991 ◽  
Author(s):  
A. Shah ◽  
E. Narumi ◽  
J. Schutkeker ◽  
S. Patel ◽  
D. T. Shaw
Keyword(s):  
Thin Films ◽  
Plasma Deposition ◽  
Rf Plasma ◽  
Deposition Parameters
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