Growth of Epitaxial Layers of GexSi1−x BY UHV/CVD

1990 ◽  
Vol 198 ◽  
Author(s):  
Marco Racanelli ◽  
David W. Greve
Keyword(s):  
Growth Rate ◽  
Deposition Temperature ◽  
Defect Density ◽  
Epitaxial Films ◽  
Epitaxial Layers ◽  
Silicon Substrates ◽  
Germanium Content ◽  
Film Roughness

ABSTRACTUndoped epitaxial layers of GexSi1−x have been grown on (100) silicon substrates using the UHV/CVD technique. Epitaxial films were obtained at growth temperatures between 577 and 665 C. The growth rate and germanium content of the layers has been determined as a function of the germane flow and the deposition temperature. A bake at 800 C was found to be highly beneficial in reducing the defect density and improving the film roughness.

Thick Epitaxial Layers Growth by Chlorine Addition

2009 ◽  
Vol 615-617 ◽  
pp. 55-60 ◽  
Author(s):  
Francesco La Via ◽  
Gaetano Izzo ◽  
Massimo Camarda ◽  
Giuseppe Abbondanza ◽  
Danilo Crippa
Keyword(s):  
Growth Rate ◽  
Defect Density ◽  
Low Cost ◽  
Schottky Diodes ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Particle Detectors ◽  
Characterization Methods ◽  
X Ray ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h by chlorine addition. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Very thick (> 100 µm) epitaxial layer has been grown and the Schottky diodes realized on these layers have good yield (> 87%) with a low defect density (10/cm2). This process gives the opportunity to realize very high power devices with breakdown voltages in the range of 10 kV or X-Ray and particle detectors with a low cost epitaxy process.

Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes

2005 ◽  
Vol 483-485 ◽  
pp. 429-432 ◽  
Author(s):  
Francesco La Via ◽  
Fabrizio Roccaforte ◽  
Salvatore di Franco ◽  
Alfonso Ruggiero ◽  
L. Neri ◽  
...  
Keyword(s):  
Growth Rate ◽  
Leakage Current ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Growth Parameters ◽  
Schottky Diodes ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Low Leakage ◽  
Low Leakage Current

The effects of the Si/H2 ratio on the growth of the epitaxial layer and on the epitaxial defects was studied in detail. A large increase of the growth rate has been observed with the increase of the silicon flux in the CVD reactor. Close to a Si/H2 ratio of 0.05 % silicon nucleation in the gas phase occurs producing a great amount of silicon particles that precipitate on the wafers. The epitaxial layers grown with a Si/H2 ratio of 0.03% show a low defect density and a low leakage current of the Schottky diodes realized on these wafers. For these diodes the DLTS spectra show thepresence of several peaks at 0.14, 0.75, 1.36 and 1.43 eV. For epitaxial layers grown with higher values of the Si/H2 ratio and then with an higher growth rate, the leakage current of the Schottky diodes increases considerably.

Preparation and characterization of epitaxial iron oxide films

1998 ◽  
Vol 13 (7) ◽  
pp. 2003-2014 ◽  
Author(s):  
Y. Gao ◽  
Y. J. Kim ◽  
S. A. Chambers
Keyword(s):  
Growth Rate ◽  
Iron Oxide ◽  
Oxygen Plasma ◽  
Film Surface ◽  
Surface Region ◽  
Growth Conditions ◽  
Epitaxial Films ◽  
Pure Phase ◽  
Iron Oxide Films

Well-ordered, pure-phase epitaxial films of FeO, Fe3O4, and γ–Fe2O3 were prepared on MgO(001) by oxygen-plasma-assisted MBE. The stoichiometries of these thin films were controlled by varying the growth rate and oxygen partial pressure. Selective growth of γ–Fe2O3 and α–Fe2O3 was achieved by controlling the growth conditions in conjunction with the choice of appropriate substrates. Growth of the iron oxide epitaxial films on MgO at ≥350 °C is accompanied by significant Mg outdiffusion. The FeO(001) film surface exhibits a (2 × 2) reconstruction, which is accompanied by a significant amount of Fe3+ in the surface region. Fe3O4 (001) has been found to reconstruct to a structure. γ–Fe23 (001) film surface is unreconstructed.

Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
Y. Lansari ◽  
J.W. Han ◽  
S. Hwang ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Epitaxial Films ◽  
Semiconductor Surface ◽  
Epitaxial Layers ◽  
Double Crystal ◽  
Surface Areas ◽  
Selective Area ◽  
Lift Off ◽  
P Type ◽  
Area Deposition

ABSTRACTII-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

SrTiO3 Functional Ceramics Thin Film Prepared by Self-Assembled Monolayers with the Liquid Phase Deposition Method on Silicon Substrates

2010 ◽  
Vol 105-106 ◽  
pp. 270-273
Author(s):  
Hui Jun Ren ◽  
Guo Qiang Tan ◽  
Hong Yan Miao ◽  
Ya Yu Song ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Liquid Phase ◽  
Deposition Temperature ◽  
Precursor Solution ◽  
Self Assembled Monolayers ◽  
Silicon Substrates ◽  
Liquid Phase Deposition ◽  
Assembled Monolayers ◽  
Surface Contact Angle

In this article, (NH4)2TiF6, SrNO3 and H3BO3 were used as raw materials to prepare the precursor solution with the ratio of AHFT/SN/BA=1:1:3. The thin films of SrTiO3 were fabricated on the functional silicon substrates (100) by self-assembled monolayers (SAMs) with the liquid phase deposition (LPD). This article also studied the effects of wet state and the deposition temperature of the precursor solution before and after the functionalization of silicon substrate on the thin film growth. The results indicated that after the immersion in OTS for 30min, the surface contact angle of the silicon substrate changed from 24.64° to 100.91°. The substrate appeared hydrophobic property and it was irradiated by UV light for 30min. Then the surface contact angle of the substrate decreased to 5.00°. The substrate appeared hydrophilicity. The concentration of the precursor solution was 0.025 mol/L, the deposition temperature was 40°C and the deposition time was 9h, which were all helpful to SrTiO3 crystallization. XRD and SEM were used to characterize the physical phase of thin film and surface morphology at 600 °C with annealing and heat retaining for 2h. The results indicated that the thin film prepared by the mono-crystal Si substrate was SrTiO3 thin film with better crystalline. On the crystal surfaces of (110), (100), (200) and (211), there appeared the obvious diffraction peaks. The SrTiO3 grains on the surface had the clear outline and were regular and long columnar crystals.

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

Scanning Scratch Tests for Evaluating the Adhesion of Thin Oxide Films on Stainless Steel

1994 ◽  
Vol 356 ◽  
Author(s):  
V. A. C. Haanappel ◽  
H. D. van Corbach ◽  
T. Fransen ◽  
P. J. Gellings
Keyword(s):  
Mechanical Properties ◽  
Growth Rate ◽  
Stainless Steel ◽  
Film Thickness ◽  
Critical Load ◽  
Deposition Temperature ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Thin Oxide Films ◽  
Type Aisi

AbstractAmorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low pressure (0.17 kPa (1.25 torr)).The effect of deposition temperature (200 − 380 °C), growth rate, film thickness, and post-deposition thermal treatment on the mechanical properties was studied. The experiments were performed with a scanning-scratch tester. The experiments are based on the estimation of the film adhesion to the substrate by determining a critical load, Lc: the load where the film starts to spall or to delaminate.The best mechanical properties were obtained with unannealed samples. After thermal annealing the critical load decreases. Regarding the unannealed samples, the critical load increased with increasing film thickness. The deposition temperature and the growth rate had no effect on the critical load.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

Hydrogenated Amorphous Silicon Germanium Alloy for Stable Solar Cells

1994 ◽  
Vol 336 ◽  
Author(s):  
A. Terakawa ◽  
M. Shima ◽  
K. Sayama ◽  
H. Tarui ◽  
H. Nishiwaki ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Silicon Germanium ◽  
Defect Density ◽  
Characteristic Energy ◽  
Solar Cell Performance ◽  
Germanium Content ◽  
Junction Solar Cell ◽  
Degradation Ratio ◽  
Double Junction

ABSTRACTThe film properties and solar cell performance of a-SiGe:H samples with the same optical gap and different combinations of hydrogen content (CH) and germanium content (CGe) have been compared. The optimum composition for the initial properties, such as the tail characteristic energy, defect density and conversion efficiency of the solar cell, was determined, and the differences could be explained by the difference in H bonding configuration. The degradation ratio of the conversion efficiency becomes larger in higher CH samples. This suggests that hydrogen or Si-H2 participates in light-induced degradation. As a result, the optimum CH for an efficient solar cell is believed to shift to the lower CH region after light soaking. Based on these findings, the stabilized conversion efficiency of 3.3% under red light (γ>650nm) for an a-SiGe:H single-junction solar cell (1cm2) and 10.6% under lsun light for an a-Si/a-SiGe double-junction stacked solar cell (1cm2) have been achieved. The degradation ratio is only 8.6% for the double-junction solar cell.

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