Orientation Dependent Epitaxial Growth of CeO2 Layers on Si Substrates

1991 ◽  
Vol 237 ◽  
Author(s):  
T. Inoue ◽  
T. Ohsuna ◽  
Y. Yamamoto ◽  
Y. Sakurai ◽  
L. Luo ◽  
...  
Keyword(s):  
Volume Fraction ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electron Beam Evaporation ◽  
Ultra High Vacuum ◽  
Lattice Image ◽  
Cross Sectional ◽  
Si Substrates ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron

ABSTRACTCerium dioxide (CeO2) layers epitaxially grown on (100), (111) and (110) silicon substrates by electron beam evaporation in an ultra-high vacuum were investigated. CeO2 layers on Si (111) substrates were proved to be epitaxially grown at the substrate temperature above 200°C, and had considerably good crystalline quality. On the other hand, CeO2 layers grown on Si (100) at 800°C consisted of more than 98% volume fraction of (110) component. Cross-sectional high resolution transmission electron microscopy and selected area electron diffraction verified clearly the above crystallography orientation and that the <100> direction in the CeO2(110) plane was parallel with the <110> direction in the Si (100) plane. The cross-sectional lattice image confirmed the existence of ∼ 6 nm-thick intermediate amorphous layer between the CeO2 layer and the Si substrate.

INVESTIGATION OF Ta/Ni–Al INTEGRATED FILM USED AS A DIFFUSION BARRIER LAYER BETWEEN Cu AND Si

2014 ◽  
Vol 21 (06) ◽  
pp. 1450079 ◽  
Author(s):  
LIM YANG ◽  
SHI JIE WANG ◽  
JI CHUAN HUO ◽  
XIAO HONG LI ◽  
JIAN XIN GUO ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
High Vacuum ◽  
Annealed Sample ◽  
Ultra High Vacuum ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Xrd Patterns

Ta (3.3 nm)/ Ni – Al (3.3 nm) integrated films deposited on Si substrates by magnetron sputtering, annealed at various temperatures in a ultra-high vacuum, have been studied as diffusion barrier layers between Cu and Si for application in Cu interconnection. The images of transmission electron microscopy (TEM) prove that the cross-sectional interfaces of Cu / Ta / Ni – Al / Si sample annealed at 600°C are clear and sharp. No Cu –silicide peaks can be found from the X-ray diffraction (XRD) patterns of the 850°C annealed sample, but the sheet resistance of the sample increases abruptly. Moreover, large grooves are found from the image of atomic force microscopy (AFM) for the 850°C annealed sample, implying the failure of the diffusion barrier. The integrated Ta / Ni – Al barrier layer retains thermally stable nature up to at least 800°C, indicating that the Ta / Ni – Al integrated film is an excellent diffusion barrier between Cu and Si .

A Field Emission System For Transmission Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 298-299
Author(s):  
Michel Troyonal ◽  
Huei Pei Kuoal ◽  
Benjamin M. Siegelal
Keyword(s):  
Electron Microscope ◽  
Field Emission ◽  
Optical System ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Objective Lens ◽  
Electron Optical System ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Emission System

A field emission system for our experimental ultra high vacuum electron microscope has been designed, constructed and tested. The electron optical system is based on the prototype whose performance has already been reported. A cross-sectional schematic illustrating the field emission source, preaccelerator lens and accelerator is given in Fig. 1. This field emission system is designed to be used with an electron microscope operated at 100-150kV in the conventional transmission mode. The electron optical system used to control the imaging of the field emission beam on the specimen consists of a weak condenser lens and the pre-field of a strong objective lens. The pre-accelerator lens is an einzel lens and is operated together with the accelerator in the constant angular magnification mode (CAM).

Oxidation Kinetics of Cu-Ni Alloy Observed by in situ UHV-TEM

2007 ◽  
Vol 1026 ◽  
Author(s):  
Li Sun ◽  
John E. Pearson ◽  
Judith C. Yang
Keyword(s):  
High Vacuum ◽  
Alloy Film ◽  
Ultra High Vacuum ◽  
Cross Sectional ◽  
Primary Mechanism ◽  
Transmission Electron ◽  
Ni Alloy ◽  
Cu Oxidation ◽  
Kinetics Of

AbstractThe nucleation and growth of Cu2O and NiO islands due to oxidation of Cu-24%Ni(001) films were monitored at various temperatures by in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM). In remarkable contrast to our previous observations of Cu and Cu-Au oxidation, irregular-shaped polycrystalline oxide islands were observed to form with respect to the Cu-Ni alloy film, and an unusual second oxide nucleation stage was noted. Similar to Cu oxidation, the cross-sectional area growth rate of the oxide island is linear indicating oxygen surface diffusion is the primary mechanism of oxide growth.

Structure and Magnetic Properties of Fe-N Thin Films Grown by ECR Deposition

1999 ◽  
Vol 562 ◽  
Author(s):  
Š émeth ◽  
H. Akinaga ◽  
H. Boeve ◽  
H. Bender ◽  
J. de Boeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
High Vacuum ◽  
Plasma Source ◽  
Columnar Structure ◽  
Ultra High Vacuum ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe growth of FexNy thin films on GaAs, In0.2Ga0.8As, and SiO2/Si substrates using an ultra high-vacuum (UHV) deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma source is presented. The structural properties of the deposited films have been measured using various techniques as x-ray diffraction (XRD), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The results of XRD measurements show that the films consist of a combination of α-Fe, α'-Fe, y-Fe4N, and α”- Fe16N2 phases. The depth profiles, calculated from the Auger peak intensities, show a uniform nitrogen concentration through the films. The TEM reveals a columnar structure of these films. The properties of the different Fe-N layers have been exploited in the fabrication of Fe(N) / FexNy / Fe trilayer structures, where Fe(N) means a slightly nitrogen doped Fe film. The magneto-transport properties of this trilayer structure grown on In0.2Ga0.8As substrates are presented.

Growth and Structure of Al/MgO Interfaces

1994 ◽  
Vol 357 ◽  
Author(s):  
T. Wagner ◽  
M. Ruhle
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Structural Defects ◽  
Cross Sectional ◽  
Aluminum Films ◽  
Transmission Electron

AbstractThe A1/MgO system has been used as a model system to study growth processes and structure at metal/ceramic interfaces. Aluminum films were grown on air-cleaved MgO (100) substrates in ultra high vacuum (UHV) by molecular beam epitaxy (MBE). The substrates and films were characterized by reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), conventional transmission electron microscopy (CTEM), and high resolution transmission electron microscopy (HREM). XRD measurements exhibited a pronounced {100} texture. Employing electron diffraction in the TEM on cross sectional samples, we observed the following orientation relationship between Al and MgO: (100)A1 II (100)MgO; [010]A1 II [010]MgO. The atomistic structure of the interface was investigated by HREM. Regions of structural defects can be identified clearly at the interface.

The Growth and Characterisation of Ir Silicide Films on (111)Si

1990 ◽  
Vol 202 ◽  
Author(s):  
M.A. Lawn ◽  
R.G. Elliman ◽  
M.C. Ridgway ◽  
R. Leckey ◽  
J.D. Riley
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Grain Structure ◽  
Si Substrates ◽  
Fine Grain ◽  
Transmission Electron

ABSTRACTA study of the growth of thin Ir silicide films on (111)Si substrates has been undertaken. Thin (2.0nm) ir films deposited onto Si substrates under ultra-high vacuum conditions have been observed to display remarkable film continuity and fine grain structure (lnm). In situ annealing at 1000°C resulted in the formation of large regions (>10µm) of epitaxial IrSi3 islands (∼1µm) with identical epitaxial orientations. By means of annealing an as-deposited (2.0nm) Ir film stepwise to 1000°C within a transmission electron microscope the evolution of Ir silicide phases and morphologies were observed. The epitaxial growth of the semiconducting IrSi1.75 phase is reported along with the formation of Ir silicide islands at temperatures between 700°C and 800°C.

Structure And Magnetic Properties Of Fe-N Thin Films Grown By Ecr Deposition

1999 ◽  
Vol 577 ◽  
Author(s):  
S. Németh ◽  
H. Akinaga ◽  
H. Boeve ◽  
H. Bender ◽  
J. De Boeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
High Vacuum ◽  
Plasma Source ◽  
Columnar Structure ◽  
Ultra High Vacuum ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe growth of FexNy thin films on GaAs, In0.2Ga0.8As, and Si02/Si substrates using an ultra high-vacuum (UHV) deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma source is presented. The structural properties of the deposited films have been measured using various techniques as x-ray diffraction (XRD), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The results of XRD measurements show that the films consist of a combination of α-Fe, α'-Fe, γ-Fe4N, and α”- Fe16N2 phases. The depth profiles, calculated from the Auger peak intensities, show a uniform nitrogen concentration through the films. The TEM reveals a columnar structure of these films. The properties of the different Fe-N layers have been exploited in the fabrication of Fe(N) / FexNy / Fe trilayer structures, where Fe(N) means a slightly nitrogen doped Fe film. The magneto-transport properties of this trilayer structure grown on In0.2Ga0.8As substrates are presented.

Formation of Ge Nanocrystals in SiO2 by Electron Beam Evaporation

2008 ◽  
Vol 8 (2) ◽  
pp. 818-822 ◽  
Author(s):  
P. Basa ◽  
G. Molnár ◽  
L. Dobos ◽  
B. Pécz ◽  
L. Tóth ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Sheet Resistance ◽  
Electron Beam Evaporation ◽  
Nanocrystal Size ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Weber Type ◽  
Ge Nanocrystals

Ge nanocrystals were formed by electron beam evaporation on SiO2 covered Si substrates. The size and distribution of the nanocrystals were studied by atomic force microscopy, scanning electron microscopy and cross-sectional transmission electron microscopy. Dependencies of the nanocrystal size, of the nanocrystal surface coverage, and sheet resistance obtained by van der Pauw method of the Ge layer have been found on the evaporation time. The suggested growth mechanism for the formation of nanocrystals is the Volmer-Weber type. The sheet resistance exhibited a power dependence on the nanocrystal size.

Growth of GaN on (100)Si Using a New C-H and N-H Free Single-Source Precursor

1995 ◽  
Vol 395 ◽  
Author(s):  
John Kouvetakis ◽  
Jeffrey McMurran ◽  
David B. Beach ◽  
David J. Smith
Keyword(s):  
High Vacuum ◽  
Chemical Vapor ◽  
High Growth ◽  
Ultra High Vacuum ◽  
Cross Sectional ◽  
Growth Environment ◽  
Si Substrates ◽  
Single Source Precursor ◽  
Gan On Si ◽  
First Time

ABSTRACTWe have demonstrated growth of crystalline GaN on Si substrates by using, for the first time, a novel inorganic precursor Cl2GaN3 and ultra-high-vacuum chemical vapor deposition techniques. Cross-sectional electron microscopy of the highly conformal films showed columnar growth of wurtzite GaN while Auger and RBS oxygen- and carbon-resonance spectroscopies showed that the films were pure and highly homogeneous. In addition to the high growth rates of 70–500 Å per minute, the low deposition temperature of 550–700 °C, and the nearly perfect GaN stoichiometry that we obtain, another notable advantage of our method is that it provides a carbon-free growth environment which is compatible with p-doping processes.

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