Study of Sitox Process and its Application to Advanced MOS Devices

1992 ◽  
Vol 260 ◽  
Author(s):  
J. Lin ◽  
W. Chen ◽  
S. Banerjee ◽  
J. Lee ◽  
C. Teng ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Si Substrate ◽  
Polycrystalline Structure ◽  
Leakage Currents ◽  
X Ray ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Mos Devices ◽  
High Annealing ◽  
Average Grain Size

ABSTRACTIn this study, the application of Sllicidation Through OXide (SITOX) process to TiSi2 formation is extensively investigated. The data show that the decomposition of an interfacial SiO2 layer between Ti and the Si substrate depends not only on its thickness but also on the silicidation temperature and the type of dopants in the Si substrate. In general, high annealing temperatures and B-doped p+ Si substrates enhance the decomposition of interfacial SiO2. After the silicidation process, the O concentration at the TiSi2/Si interface is approximately two orders of magnitude higher with SITOX than with the conventional silicidation process. This high interfacial O concentration has no significant effect on the electrical properties of SITOX TiSi2 films and junction diodes. The X-ray Diffraction analysis shows that SITOX TiSi2 films have a polycrystalline structure as do conventional TiSi2 films. The average grain size in a 100 nm SITOX TiSi2 film is estimated to be about 10 μm wide, while that in a 120 nm conventional TiSi2 film is about 3 μm. Histograms of leakage current for junction diodes confirm that the SITOX process can improve the uniformity of leakage currents.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Laser Recrystallization of InP Films on Oxidized Si Substrate

1985 ◽  
Vol 53 ◽  
Author(s):  
Li Xiqiang ◽  
Zhu Weiwen ◽  
Lin Chenglu ◽  
Wang Weiyuan ◽  
Tsou Shihchang
Keyword(s):  
Grain Size ◽  
Laser Power ◽  
Beam Diameter ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Laser Recrystallization ◽  
Before And After

ABSTRACTThe InP films with thickness of 1-2 µm and resistivity of 10-10−3Ω-cm were sputtered on oxidized Si substrates heated at about 300°C to form as InP SOI. Using X-ray diffraction, ED, TEM, Hall and RBS, we have investigated the grain size, compositions, thermal stability and electrical characteristics of InP SOI before and after CW Ar+ laser recrystallization. The sputtered InP SOI films appear as polycrystalline and its grain size increases with increasing of irradiated laser power from 5.8 to 7.0 W at a beam diameter of 70 µm. After irradiation at 7 W the single crystal ED patterns are obtained, the mobility and carrier concentrations amount to 103cm2/Vs and 1017cm−3, respectively, and the compositions are stoichiometric.

Electrical and Physical Properties of the Bi3.25La0.75Ti3O12 Ferroelectric Thin Films Prepared by Conventional Temperature Annealing Process

2012 ◽  
Vol 512-515 ◽  
pp. 1317-1320
Author(s):  
Fann Wei Yang ◽  
Kai Huang Chen ◽  
Chien Min Cheng
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Annealing Process ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Leakage Currents ◽  
Furnace Annealing ◽  
X Ray ◽  
Conventional Furnace

We have investigated the structure and ferroelectric properties of the Bi3.25La0.75Ti3O12 (BLT) thin films on SiO2/Si substrate fabricated by sol-gel method. We used the BLT films were annealed at various temperatures of 600, 650, and 700°C for one hour by conventional furnace annealing (CTA). The temperature dependence of leakage currents densities of ferroelectric BLT thin films. The crystalline structure of the prepared BLT thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. The leakage current density and capacitance of thin film were measured by HP4156C.

NICKEL SILICIDATION ON POLYCRYSTALLINE SILICON GERMANIUM FILMS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4323-4326
Author(s):  
W. K. CHOI ◽  
K. L. PEY ◽  
H. B. ZHAO ◽  
T. OSIPOWICZ ◽  
Z. X. SHEN
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Annealing Temperature ◽  
Boundary Diffusion ◽  
Formation Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Range ◽  
Annealing Temperatures ◽  
High Annealing

The interfacial reactions of Ni with polycrystalline Si 0.8 Ge 0.2 films at a temperature range of 300-900°C by rapid thermal annealing for 60s are studied. The sheet resistances of the silicide films were relatively low at ~10 ohm/sq for samples annealed below 600°C. X-Ray diffraction results suggested the existence of low resistivity phase Ni(Si 1-x Ge x ) in the film. The significant increase in sheet resistance for films annealed at 700-900°C is probably due to the reduction in the density of Ni(Si 1-x Ge x ) as a result of fast Ni diffusion at high annealing temperatures. Fast grain boundary diffusion of Ni was suggested to cause the lowering of formation temperature of Ni(Si 1-x Ge x ) on polycrystalline Si 1-x Ge x films. Rutherford backscattering results showed that for films annealed at a temperature range of 300-600°C, Ni has reacted with the polycrystalline films. However, at an annealing temperature higher than 700°C, Ni diffused through the whole film.

Growth of A β-SiC Filli on a Si Substrate by a Direct Carbonization Method

1991 ◽  
Vol 220 ◽  
Author(s):  
Yasuaki Hirano ◽  
Taroh Inada
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Crystallization Process ◽  
Thermal Reaction ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Film Properties ◽  
X Ray ◽  
Si Substrates ◽  
Sic Films

Single crystal β-SiC films have been fabricated on (100)Si substrates through a thermal reaction between the substrate and carbon atoms sublimed from a high purity graphite source. The substrate temperature during the deposition ranged from 600 to 1100°C. The film properties were analyzed by RHEED and x-ray diffraction measurements. RBS measurements and TEM observations have also been made to investigate the film properties. The single crystal β-SiC films grow at and above 1000°C on (100) substrates. The activation energy is found to be around 1.1 eV for the crystallization process.

scholarly journals Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

1994 ◽  
Vol 358 ◽  
Author(s):  
A. R. Heyd ◽  
S. A. Alterovitz ◽  
E. T. Croke
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Alloy Composition ◽  
Compressive Strain ◽  
Energy Shift ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Graded Layers

ABSTRACTSixGe1–x heterostructures on Si substrates have been widely studied due to the maturity of Si technology. However, work on SixGe1–x heterostructures on Ge substrates has not received much attention. A SixGe1–x: layer on a Si substrate is under compressive strain while SixGe1–x on Ge is under tensile strain; thus the critical points will behave differently. In order to accurately characterize high Ge content SixGe1–x layers the energy shift algorithm, which is used to calculate alloy compositions, has been modified. These results have been used along with variable angle spectroscopic ellipsometry (VASE) measurements to characterize SixGe1–x/Ge superlattices grown on Ge substrates. The results are found to agree closely with high resolution x-ray diffraction measurements made on the same samples.The modified energy shift algorithm also allows the VASE analysis to be upgraded in order to characterize linearly graded layers. In this work VASE has been used to characterize graded SixGe1–x layers in terms of the total thickness, and the start and end alloy composition. Results are presented for a 1 µm SixGe1–x layer linearly graded in the range 0.5 ≤ x ≤ 1.0.

Low-Temperature Heteroepitaxy of β-SiC on Si (111) Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
T. Eshita ◽  
T. Suzuki ◽  
T. Hara ◽  
F. Mieno ◽  
Y. Furumura ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Large Area ◽  
Growth Technique ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Structure ◽  
Sic Films

AbstractWe developed a heteroepitaxial growth technique for large-area β-SiC films on Si substrates without buffer layers at 850ºC and 1000ºC. The substrates were vicinal 4-inch (111) Si wafers. The β-SiC films had smooth surfaces and were crack-free. X-ray diffraction and electron diffraction analysis revealed that the films grown at 1000ºC were single crystals. Satisfactory characteristics were obtained in aMOSFET with a β-SiC/Si02/poly-Si substrate structure. Our evaluations indicate that the β-SiC films were high-quality crystals.

Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si

2009 ◽  
Vol 615-617 ◽  
pp. 149-152 ◽  
Author(s):  
Andrea Severino ◽  
Ruggero Anzalone ◽  
Corrado Bongiorno ◽  
M. Italia ◽  
Giuseppe Abbondanza ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Si Substrate ◽  
Large Area ◽  
X Ray ◽  
Si Substrates ◽  
Fault Density ◽  
Transmission Electron ◽  
Pole Figures ◽  
Sic Films ◽  
Miscut Angle

The choice of off-axis (111) Si substrates is poorly reported in literature despite of the ability of such an oriented Si substrate in the reduction of stacking faults generation and propagation. The introduction of off-axis surface would be relevant for the suppression of incoherent boundaries. We grew 3C-SiC films on (111) Si substrates with a miscut angle from 3° to 6° along <110> and <11 >. The film quality was proved to be high by X-Ray diffraction (XRD) characterization. Transmission electron microscopy was performed to give an evaluation of the stacking fault density while pole figures were conducted to detect microtwins. Good quality single crystal 3C-SiC films were finally grown on 6 inch off-axis (111)Si substrate. The generated stress on both 2 and 6 inch 3C-SiC wafers has been analyzed and discussed.

Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates

2012 ◽  
Vol 711 ◽  
pp. 31-34 ◽  
Author(s):  
Andrea Severino ◽  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via
Keyword(s):  
Linear Expansion ◽  
Linear Expansion Coefficient ◽  
Thermal Treatments ◽  
Applied Physics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Out Of Plane ◽  
Sic Film

3C-SiC lattice parameters, both in-plane and out-of-plane, have been studied as a function of the temperature (up to 773 K) by performing X-Ray Diffraction (XRD) measurements in coplanar and non-coplanar geometry during the thermal treatments. A tetragonal distortion of the 3C-SiC cell has been observed, with a=b≠c, resulting from a tensile stress status induced by the presence of Si substrate. A linear expansion coefficient of about 4.404 × 10-6 K-1 at 773 K has been obtained for a 15 μm thick 3C-SiC film grown on (100) Si substrate. The discrepancy with the value reported in literature of 5.05 × 10-6 K-1 at 800 K [Slack et al., Journal of Applied Physics 46, 89 (1975)] may be related to the different nature of samples used.

SI Contacts Formed from Spun-on Metallo-Organic Solutions

1983 ◽  
Vol 25 ◽  
Author(s):  
C. S. Pai ◽  
B. Zhang ◽  
D. M. Scott ◽  
S. S. Lau ◽  
M. Bartur ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Annealing Temperature ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Linear Region ◽  
X Ray ◽  
Si Substrates ◽  
Organic Solutions ◽  
Pt Films

ABSTRACTThe use of spun-on liquids to form ohmic and Schottky barrier contacts on Si has been investigated. Two commercially available metallo-organic solutions containing Au or Pt were applied to Si substrates by spinning techniques. The Au or Pt contacts were then formed by annealing at 250°C or 450°C respectively. The metallurgical interactions between the spun-on Au or Pt layers and the Si substrate were investigated by MeV backscattering spectrometry and X-ray diffraction as a function of the annealing temperature. The resulting electrical characteristics were investigated with four point probe, I-V and C-V techniques. It was found that the spun-on Au or Pt films react with Si substrates at much higher temperatures than those deposited by vacuum evaporation. The diode characteristics of the spun-on Au films are comparable to those of evaporated Au films ( φB ∼0.85V, n ∼1.08), whereas diode characteristics of spunon Pt films show no linear region on the ln I-V curve. The application of spun-on Au also improves the bondability of Si chips on Mo headers.

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