Electrical and Physical Properties of the Bi3.25La0.75Ti3O12 Ferroelectric Thin Films Prepared by Conventional Temperature Annealing Process

2012 ◽  
Vol 512-515 ◽  
pp. 1317-1320
Author(s):  
Fann Wei Yang ◽  
Kai Huang Chen ◽  
Chien Min Cheng
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Annealing Process ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Leakage Currents ◽  
Furnace Annealing ◽  
X Ray ◽  
Conventional Furnace

We have investigated the structure and ferroelectric properties of the Bi3.25La0.75Ti3O12 (BLT) thin films on SiO2/Si substrate fabricated by sol-gel method. We used the BLT films were annealed at various temperatures of 600, 650, and 700°C for one hour by conventional furnace annealing (CTA). The temperature dependence of leakage currents densities of ferroelectric BLT thin films. The crystalline structure of the prepared BLT thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. The leakage current density and capacitance of thin film were measured by HP4156C.

Preparation and Electrical Properties of Bi0.9Nd0.1Fe0.925Mn0.075O3 Thin Films

2012 ◽  
Vol 557-559 ◽  
pp. 1933-1936
Author(s):  
Ning Yan ◽  
Sheng Hong Yang ◽  
Yue Li Zhang
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Low Leakage ◽  
Bifeo3 Thin Films ◽  
Low Leakage Current

Pure BiFeO3(BFO) and Bi0.9Nd0.1Fe0.925Mn0.075O3(BNFM) thin films were deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel method. X-ray diffraction analysis showed that all the films were single perovskite structure and a phase transition appeared in Nd–Mn codoped BiFeO3 thin films. Electrical measurements indicated that the ferroelectric properties of BFO thin films were significantly improved by Nd and Mn codoping. BNFM films exhibit a low leakage current and a good P-E hysteresis loop. The remanent polarization (Pr) value of 74μC/cm2has been obtained in BNFM films, while the coercive field (Ec) is 184kV/cm.

Dielectric and Ferroelectric Properties of Modified BiFeO3-PbTiO3 Thin Films Derived from Sol-gel Processing

2003 ◽  
Vol 784 ◽  
Author(s):  
JinRong Cheng ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Gel Processing ◽  
Room Temperature Dielectric Constant

ABSTRACTIn this paper, thin films of La- modified (Bi,La)FeO3-PbTiO3 (BLF-PT) morphotropic phase boundary (MPB) solid solutions have been prepared by using sol-gel processing. A thin Pb(Zr,Ti)O3 (PZT) template layer was introduced to make BLF-PT thin films adhere tightly to the platinized silicon (Pt/Ti/SiO2/Si) substrate. X-ray diffraction (XRD) analysis revealed that BLF-PT thin films were of the perovskite structure without detectable pyrochlore phase annealing at 650–750°C. The cross sectional and plain view images of or our specimen were observed by using the scan electrical microscope (SEM). The room temperature dielectric constant K and tanδ were of ∼800 and 4% respectively, for BLF-PT thin films using a measurement frequency of 1 kHz. Our preliminary experiments indicated that the sol-gel derived BLF-PT thin films have good insulation resistance and measurable dielectric and ferroelectric responses.

Preparation and Research of Ferroelectric Properties of Fabricated Thin Film by Doping La and Nd to Bi4Ti3O12

2011 ◽  
Vol 287-290 ◽  
pp. 2318-2321
Author(s):  
Shu Lan Guo ◽  
Jia Li ◽  
Xue Dong Xu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
Thin Film Thickness ◽  
Homogeneous Microstructure ◽  
X Ray ◽  
A Site

Ferroelectric thin films Bi3.25La0.75Ti3O12,Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 of A-site substitution of Bi4Ti3O12 were fabricated by sol-gel method in the paper. X-ray diffraction pattern shows the prepared thin films exhibit a highly random orientation with predominantly (117) and (00l) orientation. Pr values of Bi3.25La0.75Ti3O12 、Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 thin films were respectively 13.14μC/cm2, 20.65μC/cm2 and 21.23μC/cm2 at the voltage of 10V.FE-SEM shows that the BNT thin film has a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.

Microstructure and superconducting properties of Y–Ba–Cu–O and Yb–Ba–Cu–O thin films formed by metalorganic deposition

1989 ◽  
Vol 4 (5) ◽  
pp. 1065-1071 ◽  
Author(s):  
Y. L. Chen ◽  
J. V. Mantese ◽  
A. H. Hamdi ◽  
A. L. Micheli
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Grain Size ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Conventional Furnace ◽  
Transmission Electron ◽  
Metalorganic Deposition

Thin films of Y–Ba–Cu–O and Yb–Ba–Cu–O, 0.5–1.5 μm in thickness, were deposited onto (211) and (100) SrTiO3 single crystal substrates by metalorganic deposition (MOD). After deposition the samples were annealed either by conventional furnace annealing or rapid thermal annealing (RTA). The microstructures of these films were then characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersive x-ray spectrometry (EDS). Grain size of the annealed films varied from 0.25 to 1.0 μm. Improved superconducting properties were found for the RTA samples, compared to furnace annealing, and were attributed to larger grain size, little strontium diffusion into the thin films from the substrate, and highly preferred orientation of the 1:2:3 phase.

EFFECTS OF La DOPING ON FERROELECTRIC PROPERTIES OF CaBi4Ti4O15 THIN FILMS

2007 ◽  
Vol 14 (02) ◽  
pp. 277-281
Author(s):  
YANXIA DING ◽  
GUANGDA HU ◽  
SUHUA FAN
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
La Doping ◽  
Gel Technique ◽  
A Site

La modified CBTi ( CLBTi ) thin films were prepared on Pt/Ti/SiO 2/ Si (100) substrates by a sol–gel technique. X-ray diffraction analysis showed that single phase of CLBTi thin films were obtained. Their crystallization and hysteresis behavior were strongly dependent on the La contents. An increase of 2Pr as well as a decrease of 2Ec with the increase of La concentration were observed. The leakage properties of CBTi thin films were found to be improved by the La doping. The results were discussed with respect to the effects of La 3+ substitution at perovskite A-site.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

EFFECT OF GRAIN SIZE ON THE FERROELECTRIC PROPERTIES OF Bi3.25La0.75Ti3O12 Thin Films

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4469-4474 ◽  
Author(s):  
KYOUNG-TAE KIM ◽  
CHANG-IL KIM ◽  
DONG-HEE KANG ◽  
IL-WUN SHIM
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Fatigue Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Metalorganic Decomposition ◽  
Small Grains

The Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared by metalorganic decomposition method. The effect of grain size on the ferroelectric properties during crystallization were investigated by x-ray diffraction and field emission scanning electron microscope. The grain size and the roughness of BLT films increase with increasing of drying temperature. The leakage current densities of the BLT thin film with large grains are higher than that with small grains. The remanent polarization of BLT increase with increasing grain size. As compared BLT with small grain size, the BLT film with larger grain size shows better fatigue properties. This may be explained that small grained films shows more degradation of switching charge than large grained films.

Barium Titanate Ceramic/Ceramic 0–3 Composites for Ultrasonic Transducer Applications

1999 ◽  
Vol 574 ◽  
Author(s):  
M. C. Cheung ◽  
H. L. W. Chan ◽  
Q. F. Zhou ◽  
C. L. Choy
Keyword(s):  
Barium Titanate ◽  
Ceramic Composite ◽  
Ultrasonic Transducer ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barium Titanate Ceramic ◽  
Sol Gel Process ◽  
Titanate Ceramic

AbstractBarium titanate (BaTiO3) 0–3 ceramic/ceramic composite thick films (∼16μm) for ultrasonic transducer applications were fabricated by a modified sol-gel process. Nano-sized BaTiO3 powder was dispersed in a sol-gel matrix of BaTiO3 to form a 0–3 composite solution. Films were prepared by spin coating and then annealed at various temperatures. The crystallization of the composite film was studied by X-ray diffraction. The dielectric permittivity and the ferroelectric properties of the film were also measured.

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