Thin Film Infrared Laser Pyrolysis Studies of Thermal Decomposition Mechanisms in Nitramine Propellants

1992 ◽  
Vol 296 ◽  
Author(s):  
Tod R. Botcher ◽  
Charles A. Wight

AbstractThin films of RDX (1,3,5-trinitro-1,3,5-triazine) have been prepared by vapor deposition onto a 77 K substrate window and pyrolyzed with a pulsed CO2 laser. Each sample is rapidly quenched after the laser pulse by heat conduction into the cold substrate, and the initial reaction products are trapped on the window for examination by transmission FTIR spectroscopy. We have detected N2O4, the dimer of nitrogen dioxide, as an initial condensed phase pyrolysis product, confirming that scission of one of the N-N bonds is the first step in the reaction mechanism. No evidence was found for formation of methylene nitramine via a proposed concerted depolymerization pathway.

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000175-000182
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
Ambrose Wolf ◽  
Daniel Krueger

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.


2003 ◽  
Vol 769 ◽  
Author(s):  
Seong Deok Ahn ◽  
Seung Youl Kang ◽  
Yong Eui Lee ◽  
Meyoung Ju Joung ◽  
Chul Am Kim ◽  
...  

AbstractWe have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed


2002 ◽  
Vol 756 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Sergey Yarmolenko ◽  
Qiuming Wei

ABSTRACTLiquid fuel combustion chemical vapor deposition technique was successfully used for YSZ thin film processing. The nucleation rates were obtained for the samples processed at different temperatures and total-metal-concentrations in the liquid fuel. An optimum substrate temperature was found for the highest nucleation rate. The nucleation rate was increased with the total-metal-concentration. Structural evolution of the thin film in the early processing stage was studied with regard to the formation of nuclei, crystallites and final crystals on the films. The films were found to be affected by high temperature annealing. The crystals and the thin films were characterized with scanning electron microscopy.


2013 ◽  
Vol 284-287 ◽  
pp. 225-229 ◽  
Author(s):  
Chao Nan Chen ◽  
Jung Jie Huang ◽  
Gwo Mei Wu ◽  
How Wen Chien

Silicon nitride (SiNx), an important material used as a dielectric layer and passivation layer in thin film transistor liquid crystal display (TFT LCD) was patterned by a non-lithographic process. SiNx was deposited by plasma enhanced chemical vapor deposition (PECVD) on glass substrate. Laser photoablation can effectively pattern 5 µm diameter with 200 nm depth hole in SiNx thin films with laser photoablation. The threshold remove fluence is 1350 mJ/cm2 with 1 laser irradiation shot. The contact-hole taper angle as a function of the laser irradiation shot number. The taper angle increased with increasing the laser irradiation shot number. The contact-hole taper angle etched profile was successfully controlled by vary the laser irradiation shot number.


2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
M. R. Khanlary ◽  
E. Salavati

Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2glass is described. Interaction of high-energy Ar+ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.


1970 ◽  
Vol 92 (2) ◽  
pp. 113-121 ◽  
Author(s):  
R. W. Coutant ◽  
R. E. Barrett ◽  
E. H. Lougher

An investigation was made of the reaction between SO2 and limestone and dolomite particles in flue gas. Reaction data were generated by exposing the particles to flue gas in a dispersed-phase reactor that simulates localized boiler-furnace conditions. Variables included in the study were residence time, temperature, particle size, SO2 concentration, and chemical state of the stone. A model is hypothesized for the SO2- particle reaction that is consistent with the experimental data. The hypothesis states that the initial reaction products are sulfites, and that as the particle temperature rises above about 1400 deg F, SO2 is lost by thermal decomposition of the sulfite. Concurrently the sulfite can oxidize and/or disproportionate to form sulfate.


2008 ◽  
Vol 388 ◽  
pp. 179-182 ◽  
Author(s):  
Rintarou Morohashi ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Tomohiko Yoshioka ◽  
M. Tanaka ◽  
...  

Lithium niobate (LiNbO3) thin films were deposited on Al2O3(001) substrates using metal-organic chemical vapor deposition (MOCVD), with Li(dpm) and Nb(C2H5)5 as precursors. By optimizing the conditions of thin film deposition, the c-axis oriented and epitaxially grown LiNbO3 thin films with stoichiometric composition were deposited on an Al2O3(001) substrate. The refractive index of the stoichiometric LiNbO3 thin film was 2.24 at = 632.8 nm, which is close to that of bulk crystal.


Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 145
Author(s):  
Miłosz Grodzicki

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite form, (0001) oriented, are summarized. Thin films of several elements—manganese, nickel, palladium, arsenic, and antimony—were formed by the physical vapor deposition method. The results of the bare surfaces, as well as the thin film/GaN(0001) phase boundaries presented, were characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information on the electronic properties of GaN(0001) surfaces are shown. Different behaviors of the thin films, after postdeposition annealing in ultrahigh vacuum conditions such as surface alloying and subsurface dissolving and desorbing, were found. The metal films formed surface alloys with gallium (MnGa, NiGa, PdGa), while the semimetal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate could react with it, modifying the surface properties of GaN(0001).


RSC Advances ◽  
2016 ◽  
Vol 6 (56) ◽  
pp. 50770-50775 ◽  
Author(s):  
Tianjun Liu ◽  
Jiawei Wang ◽  
Liang Wang ◽  
Jing Wang ◽  
Jingbo Lan ◽  
...  

We report the observation of a screw-dislocation-driven spiral growth of DMDPC organic thin films. The existence of screw dislocations was clearly confirmed by the observations of outcropped stepsand spiral fringes.


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