Dry Etching of Ta-Si-N Diffusion Barrier Material in Cf4+02 Gas Mixtures

1994 ◽  
Vol 337 ◽  
Author(s):  
G.F. McLane ◽  
L. Casas ◽  
J.S Reid ◽  
E. KoIawa ◽  
M-A. Nicolet
Keyword(s):  
Diffusion Barrier ◽  
Delay Time ◽  
Electron Spectroscopy ◽  
Etch Rate ◽  
Auger Electron ◽  
Native Oxide ◽  
Gas Composition ◽  
Barrier Material ◽  
Near Surface ◽  
Initial Delay

ABSTRACTSputtered Ta36Si14N50 amorphous diffusion barrier layers were reactive ion etched in CF4+02 plasmas. Etch rate varied with gas composition, with 15 percent 02 concentration producing maximum etch rate. Etch rates increased with both pressure and power. Etching proceeded only after an initial delay time which was dependent upon gas composition and applied power. The delay time was probably caused by the presence of a surface native oxide which must first be removed before etching can commence. Auger electron spectroscopy measurements showed the native oxide to be approximately 2 nm thick on as-grown samples, and indicate that near-surface stoichiometry is maintained on etched samples.

AES STUDY OF THE INTERFACE FORMATION IN PECVD SiO2-InSb STRUCTURES

1989 ◽  
Vol 03 (11) ◽  
pp. 1655-1660 ◽  
Author(s):  
E.P. VALCHEVA ◽  
K.G. GERMANOVA ◽  
S.S. GEORGIEV
Keyword(s):  
Chemical Composition ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Deposition Temperature ◽  
Auger Electron ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Native Oxide ◽  
Interfacial Region ◽  
Interface Formation

Semiconductor-insulator structures prepared on InSb substrates by plasma-enchanced chemical vapour deposition of SiO 2 are investigated by means of Auger electron spectroscopy. The chemical composition of the oxide layer and the insulator-InSb interface formation are studied as a function of the deposition temperature. The conditions for the presence of native oxide in the interfacial region are estimated and discussed.

Laser-Assisted Etching of Lithium Niobate

1988 ◽  
Vol 126 ◽  
Author(s):  
Glennis J. Orloff ◽  
Steven L. Bernasek ◽  
Gary L. Wolk ◽  
R. J. Coyle
Keyword(s):  
Experimental Data ◽  
Chemical Analysis ◽  
Lithium Niobate ◽  
Rate Equation ◽  
Electron Spectroscopy ◽  
Optical Waveguides ◽  
Etch Rate ◽  
Auger Electron ◽  
Important Process ◽  
Electro Optic

ABSTRACTLaser-assisted dry etching of lithium niobate, LiNbO3, as well as other electro-optic materials could be an industrially important process in the fabrication of optical waveguides. In this investigation, an excimer laser (ArF; 193nm) was used to conduct etching reactions using nitrogen trifluoride, NF3. Enhancement of etching was observed by comparing the etch rate for a gas assisted process with that of a purely photoablative process. Chemical analysis of the etched features via Auger electron spectroscopy and correlation of a simple rate equation with the experimental data revealed that lasersurface interactions are responsible for the laser-assisted etching process.

NH3-Plasma Treatment of Gaas Surface at High Temperature in Remote Plasma and Direct Plasma Reactor

1993 ◽  
Vol 318 ◽  
Author(s):  
Kyoung Wan Park ◽  
Seong Jae Lee ◽  
Mincheol Shin ◽  
El-Hang Lee
Keyword(s):  
High Temperature ◽  
Plasma Treatment ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Plasma Reactor ◽  
Gaas Surface ◽  
Ex Situ ◽  
Native Oxide ◽  
Long Term Stability

ABSTRACTNH3-plasma treatment has been used for passivation of native-oxide-contaminated GaAs surface. Ex situ band-gap photoluminescence(PL) measurement shows enhanced intensity for the treated surfaces in direct plasma. Auger electron spectroscopy(AES) shows that the treated surface contains nitrogen atoms but no arsenic atoms, which leads us to speculate that the graded GaN thin layer was formed on the surface. Long-term stability of the enhanced PL intensity is attributed to the formation of GaN on the surface.

scholarly journals Формирование преципитатов в Si, имплантированном ионами -=SUP=-64-=/SUP=-Zn-=SUP=-+-=/SUP=- и -=SUP=-16-=/SUP=-O-=SUP=-+-=/SUP=-

2018 ◽  
Vol 52 (8) ◽  
pp. 827
Author(s):  
В.В. Привезенцев ◽  
Е.П. Kириленко ◽  
А.В. Горячев ◽  
А.В. Лютцау
Keyword(s):  
Mass Spectrometry ◽  
Surface Layer ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Near Surface ◽  
Secondary Ion ◽  
Post Implantation ◽  
Scanning Electron

AbstractThe results of studying the surface Si layer and precipitate formation in CZ n -Si(100) samples sequentially implanted with ^64Zn^+ ions with a dose of 5 × 10^16 cm^2 and energy of 100 keV and ^16O^+ ions with the same dose but an energy of 33 keV at room temperature so that their projection paths R _ p = 70 nm would coincide are presented. The post-implantation samples are annealed for 1 h in an inert Ar medium in the temperature range of 400–900°C with a step of 100°C. The profiles of the implanted impurities are studied by time-of-flight secondary ion mass spectrometry. The Si surface is visualized using a scanning electron microscope, while the near-surface layer is visualized with the help of maps of elements formed by Auger electron spectroscopy with profiling over depth. The ZnO(002) texture is formed in an amorphized Si layer after the implantation of Zn and O ions. ZnO(102) crystallites of 5 nm in size are found in a recrystallized single-crystalline Si layer after annealing in Ar at 700°C.

Study on Sulfur Passivation for CuInSe2 Polycrystalline Thin Film With (NH4)2SX Solution

1995 ◽  
Vol 386 ◽  
Author(s):  
Y. H. Cheng ◽  
B. H. Tseng ◽  
J. J. Loferski ◽  
H. L. Hwang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Photovoltaic Cells ◽  
Native Oxide ◽  
Polycrystalline Thin Film ◽  
X Ray ◽  
Sulfur Passivation ◽  
Spectroscopy Studies ◽  
Selenide Film

ABSTRACTIn this work, we studied the removal of the native oxide on polycrystalline CuInSe2 thin films by KCN and effect of subsequent chemical sulfurization with (NH4)2Sx solution on these films. As a result of the treatment, a portion of the selenide film was transformed into Culn(S,Se)2 The Auger Electron Spectroscopy and X-ray photoelectron spectroscopy studies showed that KCN removed the oxygen and the sulfurization prevented regrowth of the oxides. The optical bandgap of the sulfurized films increased about 0.27 eV. From these experiments, we concluded that sulfur atoms are incorporated in the CuInSe2 to form a stable and higher bandgap layer, Culn(S,Se)2 which may passivate the CuInSe2 and improve the performance of polycrystalline photovoltaic cells made from it.

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