scholarly journals Infrared Sensor For CVD Deposition Of Dielectric Films

1994 ◽  
Vol 341 ◽  
Author(s):  
Thomas M. Niemczyk ◽  
James E. Franke ◽  
Songbiao Zhang ◽  
David M. Haaland
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Phosphorus Content ◽  
Infrared Emission ◽  
Dielectric Films ◽  
Standard Errors ◽  
Film Sample ◽  
Film Properties ◽  
P Content ◽  
Borophosphosilicate Glass

AbstractInfrared emission (IRE) spectra were obtained from two borophosphosilicate glass (BPSG) thin-film sample sets. The first set consisted of 21 films deposited on undoped silicon wafers, and the second set consisted of 9 films deposited on patterned and doped (product) wafers. The IRE data were empirically modeled using partial least-squares calibration to simultaneously quantify four BPSG thin-film properties. The standard errors of the determinations when modeling the 21 monitor wafers were < 0.1 wt% for boron and phosphorus content, 36 Å for film thickness, and 1.9°C for temperature. The standard errors of the determinations based on the product wafers were 0.13 wt% each for B and P content, 120 Å for film thickness, and 5.9°C for temperature.

scholarly journals Determination of BPSG Thin-Film Properties using IR Reflection Spectroscopy of Product Wafers

1993 ◽  
Vol 324 ◽  
Author(s):  
Thomas M. Niemczyk ◽  
James E. Franke ◽  
Lizhong Zhang ◽  
David M. Haaland ◽  
Kenneth J. Radigan
Keyword(s):  
Film Thickness ◽  
Boron Content ◽  
Phosphorus Content ◽  
Large Data ◽  
Film Properties ◽  
Data Set ◽  
Partial Least Squares Analysis ◽  
Large Data Set ◽  
Calibration Sets

AbstractThree BPSG calibration sets were analyzed using infrared external reflection-absorption spectroscopy: 1) 21 films deposited on undoped silicon coated with 0.1 pm of silicon dioxide, 2) 21 films deposited on undoped silicon, and 3) 9 films deposited on microelectronics product wafers. A multivariate partial least squares analysis of the spectral data for the first large data set showed that boron content, phosphorus content, and film thickness can be quantified with precisions of 0.10 wt%, 0.12 wt%, and 30 Å, respectively. The second large data set yielded similar results. The precisions obtained for the nine product wafer samples were 0.13 wt% B, 0.09 wt% P, and for film thickness 103 Å.

Organic thin film thickness-dependent photocurrents polarity in graphene heterojunction phototransistor

Carbon ◽  
2021 ◽  
Vol 178 ◽  
pp. 506-514
Author(s):  
Meiyu He ◽  
Jiayue Han ◽  
Xingwei Han ◽  
Jun Gou ◽  
Ming Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Organic Thin Film ◽  
Thin Film Thickness

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

scholarly journals Optimization of Fiber Bragg Gratings Inscribed in Thin Films Deposited on D-Shaped Optical Fibers

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4056
Author(s):  
José Javier Imas ◽  
Carlos R. Zamarreño ◽  
Ignacio del Villar ◽  
Ignacio R. Matías
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Optical Fibers ◽  
Flat Surface ◽  
Sno2 Thin Film ◽  
Thin Film Thickness ◽  
A Value ◽  
Surrounding Refractive Index ◽  
Reflected Power ◽  
Fabrication Parameters

A fiber Bragg grating patterned on a SnO2 thin film deposited on the flat surface of a D-shaped polished optical fiber is studied in this work. The fabrication parameters of this structure were optimized to achieve a trade-off among reflected power, full width half maximum (FWHM), sensitivity to the surrounding refractive index (SRI), and figure of merit (FOM). In the first place, the influence of the thin film thickness, the cladding thickness between the core and the flat surface of the D-shaped fiber (neck), and the length of the D-shaped zone over the reflected power and the FWHM were assessed. Reflected peak powers in the range from −2 dB to −10 dB can be easily achieved with FWHM below 100 pm. In the second place, the sensitivity to the SRI, the FWHM, and the FOM were analyzed for variations of the SRI in the 1.33–1.4 range, the neck, and the thin-film thickness. The best sensitivities theoretically achieved for this device are next to 40 nm/RIU, while the best FOM has a value of 114 RIU−1.

Influence of ion beam parameters onto two-dimensional optical thin film thickness distributions deposited by ion beam sputtering

2019 ◽  
Vol 682 ◽  
pp. 109-120 ◽  
Author(s):  
Wjatscheslaw Sakiew ◽  
Stefan Schrameyer ◽  
Marco Jupé ◽  
Philippe Schwerdtner ◽  
Nick Erhart ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Ion Beam ◽  
Two Dimensional ◽  
Ion Beam Sputtering ◽  
Thin Film Thickness ◽  
Optical Thin Film ◽  
Beam Sputtering ◽  
Beam Parameters

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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