Laser Diagnostics of Semiconductor Processing Systems

1984 ◽  
Vol 38 ◽  
Author(s):  
Joda C. Wormhoudt ◽  
Alan C. Stanton ◽  
Joel A. Silver
Keyword(s):  
Gas Phase ◽  
Plasma Etching ◽  
Vapor Deposition ◽  
Laser Diagnostics ◽  
Semiconductor Industry ◽  
Spectroscopic Characterization ◽  
Detection Sensitivity ◽  
Semiconductor Processing ◽  
Laser Techniques

AbstractTwo processes of great importance in the semiconductor industry are vapor deposition and plasma etching. This paper presents a review of laser techniques for spectroscopic characterization of the gas phase species involved in these processes. Band strength and other spectroscopic data for selected molecules are used to give estimates of the detection sensitivity in vibrational and electronic bands. Preliminary results are given from work presently in progress in our laboratory on the detection of such species. The discussion includes examples of the application of these techniques to a number of laboratory deposition and etching devices.

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

scholarly journals Spectroscopic characterization of graphene films grown on Pt(111) surface by chemical vapor deposition of ethylene

2013 ◽  
Vol 44 (10) ◽  
pp. 1393-1397 ◽  
Author(s):  
Enzo Cazzanelli ◽  
T. Caruso ◽  
M. Castriota ◽  
A. R. Marino ◽  
A. Politano ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spectroscopic Characterization ◽  
Graphene Films

Control of Long-Lived Gas Emissions From Semiconductor Processing Equipment

1994 ◽  
Vol 344 ◽  
Author(s):  
Michael T. Mocella
Keyword(s):  
Thin Film ◽  
Global Warming ◽  
Gas Phase ◽  
Cross Sections ◽  
Semiconductor Industry ◽  
Absorption Cross ◽  
Semiconductor Processing ◽  
Gas Emissions ◽  
Industrial Policies ◽  
Global Warming Potentials

AbstractCertain perfluorocompounds (PFCs) - including CF4, C2F6, SF6, and NF3 - are widely used in gas phase thin film processing applications such as dry etching and CVD chamber cleaning. Through a combination of long atmospheric lifetimes and high infrared absorption cross sections, many PFCs have high global warming potentials (GWPs). Abatement of PFC emissions from semiconductor applications is consistent with existing and developing international, national, and industrial policies for the control of greenhouse gas emissions. For PFC applications in the semiconductor industry, there exist a number of promising options for emissions control. These options include destruction (comprising combustion, plasma, and chemical-thermal routes), recovery, and process replacement.

Spectroscopic Characterization of Nonconcerted [4 + 2] Cycloaddition of 1,3-Butadiene with Lanthanacyclopropene To Form Lanthanum–Benzene in the Gas Phase

2017 ◽  
Vol 121 (6) ◽  
pp. 1233-1239 ◽  
Author(s):  
Dilrukshi Hewage ◽  
Wenjin Cao ◽  
Jong Hyun Kim ◽  
Ya Wang ◽  
Yang Liu ◽  
...  
Keyword(s):  
Gas Phase ◽  
Spectroscopic Characterization

Chemical Vapor Deposition Synthesis and Raman Spectroscopic Characterization of Large-Area Graphene Sheets

2013 ◽  
Vol 117 (39) ◽  
pp. 9454-9461 ◽  
Author(s):  
Chun-Da Liao ◽  
Yi-Ying Lu ◽  
Srinivasa Reddy Tamalampudi ◽  
Hung-Chieh Cheng ◽  
Yit-Tsong Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spectroscopic Characterization ◽  
Graphene Sheets ◽  
Large Area ◽  
Raman Spectroscopic
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