Iron Deposition From SC-1 on Silicon Wafer Surfaces

1995 ◽  
Vol 386 ◽  
Author(s):  
S. Dhanda ◽  
C. R. Helms ◽  
P. Gupta ◽  
B. B. Triplett ◽  
M. Tran
Keyword(s):  
Oxide Film ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Room Temperature ◽  
Native Oxide ◽  
Wafer Surface ◽  
Initial Surface ◽  
Thermal Oxide ◽  
Wide Range ◽  
Wafer Surfaces

ABSTRACTThis work examines the extent of the deposition of iron on the wafer from (iron) contaminated SC-1 solutions on silicon wafer surfaces, models this effect, and also predicts the chemical state of the iron thus deposited on the wafer surface. The deposition of iron from SC-1 on three different wafer surface terminations was studied. The surfaces were characterized by: (i) the presence of ∼10 Å of native oxide, (ii) by relatively little native oxide and (iii) by a thick thermal oxide. Experiments were performed at room temperature using a 1:1:5 SC-1 (NH4 OH-H2O2-H2O) solution, and also at 80°C with a more dilute composition (0.25:0.5:5). We found that irrespective of the initial surface termination, the amount of iron deposited on the silicon surface from SC-1 exhibited remarkably little deviation over a wide range of spiking levels, leading to the conclusion that in all cases an initial rapid oxidation of the silicon took place, followed by the preferential oxidation of the iron and its inclusion as the oxide into the oxide film. Finally, the model developed predicts that lower temperatures and more concentrated chemistries are more effective in keeping the iron in solution.

The Effect of Dopant Concentration on the Native Oxide Growth on Silicon Wafer Surface

1992 ◽  
Vol 259 ◽  
Author(s):  
Y. Ishimaru ◽  
M. Yoshiki ◽  
T. Hatanaka
Keyword(s):  
Silicon Wafer ◽  
Silicon Surface ◽  
Dopant Concentration ◽  
Oxide Thickness ◽  
Native Oxide ◽  
Wafer Surface ◽  
Oxide Growth ◽  
X Ray ◽  
Silicon Bulk ◽  
P Type

ABSTRACTThe effects of dopant type and dopant concentration on the native oxide growth in air on the silicon surface were investigated. The oxide thickness was measured by X-ray photoelectron spectrometry (XPS). The oxide was thicker on n-type Si than on p-type Si in early oxidation. The oxide increased linearly with the dopant concentration. This enhancement of oxidation was assumed to be caused by vacancies near the surface in the silicon bulk.

A Boost-Up Method of MEMS-Bulk-Micromachining towards C-MEMS Fabrication for Sensing and Manipulating Bioparticles

2011 ◽  
Vol 316-317 ◽  
pp. 59-67
Author(s):  
M. Rizwan Malik ◽  
Tie Lin Shi ◽  
Zi Rong Tang ◽  
M. Haseeb
Keyword(s):  
Silicon Wafer ◽  
Three Dimensional ◽  
Wafer Surface ◽  
Main Concern ◽  
Mems Fabrication ◽  
Technological Field ◽  
Broad Concept ◽  
Silicon Cantilever ◽  
Wafer Surfaces ◽  
Comprehensive Study

Much of the recent ongoing advanced research into the quest for improved etching techniques has brought forth a broad concept for the fabrication of micro/nano-electromechanical systems (MEMS/NEMS) having high accuracy, precision, efficiency, compatibility and through-put of metallic- as well as carbon-composition structural phases. This in turn leads towards a thorough understanding of the sensing, trapping, separating, controlling, positioning, directing, concentrating and manipulating of micro-nano-sized particles - predominantly biological particles - in the emerging MEMS/NEMS technological field. This paper focuses its attention on the easiest means of wet-etching {100}-type silicon wafer surfaces by guiding the choice of [<100> or <010>] orientation (at 45° to the normal orientation). This anisotropic etching is performed in KOH solution. Here, consideration is not concerned to a large extent with process parameters as in anodic oxidation, an intensely doped boron etching stops and silicon wafer surface back-etching. The main concern of the present practical application route involves a passivating material (silicon dioxide, SiO2) and two masking stages (for a two-step etching process). As a example of this method, silicon cantilever beams having vertical edges are produced. It is concluded that the method presented will be helpful in the comprehensive study of resonators, pressure/temperature sensors, three-dimensional carbon micro-electrodes, actuators and accelerometers for bioparticle applications.

Study on the effect of Silicon surface cleaning processes on Gate Oxide Integrity

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Corradi ◽  
E. Borzoni ◽  
P. Godio ◽  
G. Borionetti
Keyword(s):  
Experimental Design ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Gate Oxide ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Quality Performance ◽  
Wafer Cleaning ◽  
Silicon Wafer Surface

ABSTRACTThe effect of different silicon wafer surface preparation in modulating gate oxide quality performance has been studied through an experimental design which examines key phases of wafer cleaning and polishing processes. An interpretation of the root causes of GOI degradation has been proposed and discussed.

Femtosecond Laser-Induced Silicon Surface Morphology in Water

2008 ◽  
Author(s):  
Yukun Han ◽  
Cheng-Hsiang Lin ◽  
Hai-Lung Tsai
Keyword(s):  
Femtosecond Laser ◽  
Surface Morphology ◽  
Surface Quality ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Periodic Structures ◽  
Industrial Applications ◽  
Silicon Surfaces ◽  
Wafer Surface ◽  
Laser Parameter

This article investigates the use of femtosecond laser induced surface morphology on silicon wafer surface in water confinement. Unlike irradiation of silicon surfaces in the air, there are no laser induced periodic structures, but irregular roughness is formed when the silicon wafer is ablated under water. The unique discovery of a smoothly processed silicon surface in water confinement under certain laser parameter combinations may help improve laser direct micromachining surface quality in industrial applications.

Material Removal Distribution of Chemical Mechanical Polishing by the Bionic Polishing Pad with Phyllotactic Pattern

2011 ◽  
Vol 175 ◽  
pp. 87-92
Author(s):  
Yu Shan Lu ◽  
Jun Wang ◽  
Nan Li ◽  
Tian Zhang ◽  
Min Duan ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Silicon Surface ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Research Results ◽  
Phyllotactic Pattern ◽  
Polishing Pad ◽  
Wafer Surfaces

In order to make the material removal distribution on polishing silicon surface more non-uniform during the chemical mechanical polishing (CMP), a kind of the bionic polishing pad with phyllotactic pattern has been designed based on phyllotaxis theory, and by polishing experiment, the effects of the phyllotaxis parameters on material removal distributions on silicon wafer surfaces are investigated. The research results show that the material removal distribution of polishing silicon surface more uniform and the edge rounding of polishing wafer can be decreased when the phyllotaxis parameters of the polishing pad are reasonably selected.

Removal of Metallic Contaminants and Native Oxide from Silicon Wafer Surface by Pure Water Containing a Little Dissolved Oxygen

1995 ◽  
Vol 386 ◽  
Author(s):  
Yuka Hayami ◽  
Miki T. Suzuki ◽  
Yoshiko Okui ◽  
Hiroki Ogawa ◽  
Shuzo Fujimura
Keyword(s):  
Dissolved Oxygen ◽  
Silicon Wafer ◽  
Pure Water ◽  
Treatment Temperature ◽  
Native Oxide ◽  
Wafer Surface ◽  
Metal Contaminants ◽  
Silicon Wafer Surface ◽  
Metallic Contaminants ◽  
Ft Ir

ABSTRACTCleaning effects of pure water containing dissolved oxygen of very low concentration (LDO water) to metallic contaminants on silicon wafer surface were confirmed. To maintain the concentration of the dissolved oxygen in water, experiments were performed in a glove box in which ambience was controlled so as to satisfy Henry's law between the water and the ambient gas. In the experiment using intensionally contaminated wafers, residual metal contaminants except copper on Si-surface decreased from 1014 atoms/cm2 to 1011 atoms/cm2 after the 1ppb hot LDO treatment at boiling point. This effect depended on the concentration of dissolve oxygen, treatment temperature, and rinsing time. Contact angle of the wafer surface increased gradually from about 10 [deg] with decrease in the residual metals and jumped up to about 90 [deg]. when the amount of residual metals reached to minimum. Then absorption peak of Si-O bonds in FT-IR-RAS spectra also disappeared. These results therefore show that hot LDO water removed metal contaminants from the wafer surface with etching of the native oxide.

Automatic Defects Measurement on Silicon Wafer Surface by Laser Scattered Defect Pattern

2000 ◽  
Author(s):  
Satoru Takahashi ◽  
Takashi Miyoshi ◽  
Yasuhiro Takaya
Keyword(s):  
Silicon Wafer ◽  
Measurement Method ◽  
Optical Measurement ◽  
Experimental System ◽  
Wafer Surface ◽  
Objective Lens ◽  
Two Stage ◽  
Process Measurement ◽  
Defect Pattern ◽  
Wafer Surfaces

Abstract A new optical measurement method for evaluating the defects on silicon wafer surfaces quantitatively, applicable to in-process measurement, is presented. The experimental system for measuring the defects consists of a Fourier transform optical system using a high-power objective lens. In order to verify the feasibility of the applications of this method to automatic in-process measurement, a two-stage measurement for detecting and evaluating small particles, which are typical defects on silicon wafer surfaces, was carried out. The results showed that the proposed two-stage measurement method is effective for measuring small defects in the sub-micro meter scale size.

Morphology of Silicon Oxide Film on Silicon Wafer Surface during Its Removal Process in a Hydrogen Ambient

2001 ◽  
Vol 40 (Part 1, No. 11) ◽  
pp. 6556-6560 ◽  
Author(s):  
Masanori Mayusumi ◽  
Masato Imai ◽  
Shinji Nakahara ◽  
Kazutoshi Inoue ◽  
Hitoshi Habuka
Keyword(s):  
Oxide Film ◽  
Silicon Wafer ◽  
Silicon Oxide ◽  
Wafer Surface ◽  
Silicon Oxide Film ◽  
Removal Process ◽  
Silicon Wafer Surface

scholarly journals The use of atomic force microscopy to assess the quality of cleaning and tribometric properties of a silicon wafer surface

2019 ◽  
Vol 43 (3) ◽  
pp. 507-511
Author(s):  
I.D. Mikheev ◽  
F.Kh. Vakhitov
Keyword(s):  
Silicon Wafer ◽  
Relative Magnitude ◽  
Wafer Surface ◽  
Friction Forces ◽  
Small Areas ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wafer Surfaces ◽  
Adhesive Forces

Differences in the values of adhesive forces of interaction between the probe tip of an atomic force microscope and the cleaned surfaces of silicon wafers during their treatment with isopropyl alcohol and distilled water were investigated experimentally. It was shown that the presence of water molecules on the surface of the substrates leads to a significant (approximately 5 times) change in the value of these forces. It was found that the use of AFM allows the relative magnitude of friction forces in small areas of silicon wafer surfaces to be estimated.

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