Laser Crystallized Polysilicon Thin Films and Applications

1995 ◽  
Vol 403 ◽  
Author(s):  
J. B. Boyce ◽  
P. Mei ◽  
D. K. Fork ◽  
G. B. Anderson ◽  
R. I. Johnson

AbstractPulsed excimer-laser crystallization of amorphous silicon on non-crystalline substrates is an important processing technique for large-area polycrystalline silicon films and devices. Interest stems, in large part, from proposals to use polycrystalline silicon on glass in large-area electronic applications, such as flat-panel active matrix displays and two-dimensional imaging systems. The polycrystalline silicon is envisioned to increase the functionality and reduce costs over the current circuits that use amorphous silicon. Also, it is found that laser-crystallized polycrystalline silicon exhibits some interesting materials properties, such as a sharp peak in the average grain size with large lateral grain growth as a function of excimer laser energy density. The average grain size increases with increasing laser fluence and peaks on the order of several microns or two orders of magnitude larger than the film thickness. The grain size then decreases with further increases in laser fluence. This peak in grain size is accompanied by a similar peak in the Hall electron mobility. This is a significant relationship for devices since the grain structure has a substantial influence on electrical properties. But to the detriment of device parameters, this large lateral grain growth occurs over a very arrow range of laser fluences and is accompanied by a corresponding peak in the surface roughness of the films. These relationships between laser processing conditions, materials properties, and device parameters force a compromise between large grain size for high mobility and homogeneity of material for uniformity of device characteristics. A window does exist in process parameter space where good-quality devices with uniform characteristics have been obtained. In addition, these attributes have been achieved under conditions that yield good polycrystalline silicon and good amorphous silicon devices on the same wafer within a mm of one another, allowing for hybrid polycrystalline and amorphous silicon circuits.

2011 ◽  
Vol 239-242 ◽  
pp. 50-54 ◽  
Author(s):  
Guo Dong Shi ◽  
Jun Qiao

Annealing treatments at 200°C, 250 °C, 300°C, and 350°C were conducted on a twin-roll casted AZ31 sheet with an initial average grain size of 10.11 mm. Microstructure and mechanical behaviors were studied by optical microscope observation and tensile mechanical test. Expermeintal results show that grain size experienced three stage evolution during 180 min annealing at each temperature: recrystallization refinement, stabilization under dynamic balance of recrystallization and grain growth, and grain growth. The minimum average grain size of 5.96 μm was achieved after 120 min annealing at 200°C. The refined grain structure causes a decrease of ultimate tensile strength and an increase of elongation, and facilitates superplastic deformation of the material.


1993 ◽  
Vol 321 ◽  
Author(s):  
J. B. Boyce ◽  
G. B. Anderson ◽  
D. K. Fork ◽  
R. I. Johnson ◽  
P. Mei ◽  
...  

ABSTRACTFor fast-pulse laser-crystallized thin-film Si on non-crystalline substrates, the average grain size exhibits a peak as a function excimer laser energy density at a characteristic laserfluence FM. The average grain size increases with increasing laser fluence and can reach a maximum value on the order of 10 pm or about 100 times the film thickness. The grain size then decreases with further increases in fluence. This peak in grain size is accompanied by a similar peak in the Hall electron mobility and x-ray scattering intensity. Our experiments have investigated as-deposited and ion-implanted samples, using a double-scan laser crystallization process. Devices have also been fabricated and studied. The results are consistent with the increase in grain size occurring because of the destruction of nucleation sites with increasing laser fluence (i.e., increased heating and complete Melting). But substrate damage occurs in the vicinity of FM, creating nucleation sites which give rise to small grain sizes in the solidified film. The disruption of the interface causes substantial current leakage through the dielectric of bottom-gate transistors, implying that devices should be laser fabricated below Fm.


1994 ◽  
Vol 343 ◽  
Author(s):  
G. B. Anderson ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
R. I. Johnson ◽  
P. Mei ◽  
...  

ABSTRACTExcimer laser crystallized Si thin films on fused silica substrates exhibit a peak in the average grain size as a function of laser energy density. The average grain size increases with increasing laser fluence until a maximum value , approximately 10 microns for a 100 nm thick Si film, is achieved. The peak in grain size is accompanied by a peak in the electron Hall mobility. Further increases in the laser fluence result in a decrease in the Si grain size and an increase in the intragranular defects. A small energy range of 40 mJ/cm2 exists in which this peak in grain size can be achieved. Cross section TEM has shown that when the peak laser fluence is exceeded, the fused silica substrate can be as rough as 17 nm. Atomic force microscopy. performed on the substrate surface after the Si has been etched off, also shows that the magnitude and spatial frequency of the roughness increases when the critical laser fluence is exceeded. This degradation of the interface may also produce sites for stacking faults to form during the solidification of the Si. This result and results of simulations of the temperature of the interface during crystallization suggests that the peak energy range exists after the complete melting of the Si thin film and before the silica substrate starts to soften.


2001 ◽  
Vol 685 ◽  
Author(s):  
M. Nerding ◽  
S. Christiansen ◽  
G. Esser ◽  
U. Urmoneit ◽  
A. Otto ◽  
...  

AbstractWe investigate the microstructure of polycrystalline silicon films (grain size, texture and grain boundary population) on glass substrates. These films are produced from amorphous silicon precursor layers by scanning the raw beam of a continuous wave Ar+- ion laser operated at a wavelength of 514 nm over the amorphous silicon thereby crystallizing it. The materials applicability for devices in large area electronics strongly depends on the orientation of the surface normal, the average grain size and the defect density and population. Transmission electron microscopy together with electron back-scattering diffraction analysis of the crystallized layers reveal grain widths of about 10μm and grain lengths of several 10 μm. Under certain procesing conditions a preferred (001)-surface normal orientation (texture) forms. The grain boundary population is dominated in the textured films by coincidence boundaries, essentially twin boundaries of first and second order as well as Σ=5 boundaries.


1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.


2013 ◽  
Vol 58 (1) ◽  
pp. 95-98 ◽  
Author(s):  
M. Zielinska ◽  
J. Sieniawski

Superalloy René 77 is very wide used for turbine blades, turbine disks of aircraft engines which work up to 1050°C. These elements are generally produced by the investment casting method. Turbine blades produced by conventional precision casting methods have coarse and inhomogeneous grain structure. Such a material often does not fulfil basic requirements, which concern mechanical properties for the stuff used in aeronautical engineering. The incorporation of controlled grain size improved mechanical properties. This control of grain size in the casting operation was accomplished by the control of processing parameters such as casting temperature, mould preheating temperature, and the use of grain nucleates in the face of the mould. For nickel and cobalt based superalloys, it was found that cobalt aluminate (CoAl2O4) has the best nucleating effect. The objective of this work was to determine the influence of the inoculant’s content (cobalt aluminate) in the surface layer of the ceramic mould on the microstructure and mechanical properties at high temperature of nickel based superalloy René 77. For this purpose, the ceramic moulds were made with different concentration of cobalt aluminate in the primary slurry was from 0 to 10% mass. in zirconium flour. Stepped and cylindrical samples were casted for microstructure and mechanical examinations. The average grain size of the matrix ( phase), was determined on the stepped samples. The influence of surface modification on the grain size of up to section thickness was considered. The microstructure investigations with the use of light microscopy and scanning electron microscopy (SEM) enable to examine the influence of the surface modification on the morphology of ’ phase and carbides precipitations. Verification of the influence of CoAl2O4 on the mechanical properties of castings were investigated on the basis of results obtained form creep tests.


2007 ◽  
Vol 539-543 ◽  
pp. 3094-3099
Author(s):  
Nho Kwang Park ◽  
Jeoung Han Kim ◽  
Jong Taek Yeom

In Alloy 718 ingot cogging process, dynamic and metadynamic recrystallizations, and static grain growth occur, and also the presence of δ phase plays a key role in controlling the grain size. In this study, the evolution of grain structure in VIM/VAR-processed Alloy 718 ingots during post-cogging heat treatments is dealt with. Compression tests were made on VIM/VAR-processed Alloy 718 ingot at temperatures between 900oC ~ 1150oC. Heat treatments were made on the compression-tested specimens, and the variation of grain size was evaluated. Constitutive equations for the grain growth are established to represent the evolution of microstructures. Special attention is paid to the evolution of grain structure under the condition of dynamic and metadynamic recrystallizations, and grain growth. The grain growth rate depends mainly on the presence of δ-phase below the δ-solvus temperature, and on the difference in the grain boundary characteristics above it.


2001 ◽  
Vol 685 ◽  
Author(s):  
Minghong Lee ◽  
Seungjae Moon ◽  
Mutsuko Hatano ◽  
Costas P. Grigoropoulos

AbstractA new double laser recrystallization technique that can produce lateral grains of tens of micrometers is presented. A nanosecond laser (excimer or Nd:YLF laser) and a pulse modulated Ar+ laser are used in the experiment. The effect of different parameters on lateral grain growth is investigated. These parameters include the time delay between the two lasers, the excimer laser fluence, the Ar+ laser power and the pulse duration. This process has wide process window and is insensitive to both the excimer laser fluence and the Ar+ laser power fluctuations. Preheating and melting of the a-Si film with the Ar+ laser before firing the excimer laser is found to be necessary for inducting lateral grain growth. The transient excimer laser irradiation is believed to generate nucleation sites for initiating the subsequent lateral grain growth. The solidification dynamics of the process is probed by high spatial and temporal resolution laser flash photography. A lateral solidification velocity of about 10 m/s is observed.


2021 ◽  
Vol 1016 ◽  
pp. 1503-1509
Author(s):  
Kosuke Ueki ◽  
Soh Yanagihara ◽  
Kyosuke Ueda ◽  
Masaaki Nakai ◽  
Takayoshi Nakano ◽  
...  

The Co-20Cr-15W-10Ni (CCWN, mass%) alloy has excellent corrosion resistance and strength-ductility balance and is applied in almost all balloon-expandable stent platforms. To further reduce the invasiveness of stent placement, it is necessary to reduce the diameter of the stent. That is, both high strength and high ductility should be achieved while maintaining a low yield stress. In our previous studies, it was discovered that low-temperature heat-treatment (LTHT) at 873 K improves the elongation of the CCWN alloy. In this study, we focused on the grain refinement by swaging and static recrystallization to improve the strength of the alloy. The as-swaged alloy was recrystallized at 1373–1473 K for 100–300 s, followed by LTHT. A fine grain structure with an average grain size of 3–17 μm was obtained by static recrystallization. The η-phase (M12X-M6X type precipitates, M: metallic elements, X: C and/or N) formed during the recrystallization at 1373–1448 K. The alloys recrystallized at 1448 and 1473 K had a homogeneous structure with a small variation in the grain size. On the other hand, the alloys recrystallized at 1373 and 1423 K had an inhomogeneous structure in which fine and coarse grains were mixed. Both the strength and ductility of the CCWN alloy were improved by combining high-temperature short-time recrystallization and LTHT.


2017 ◽  
Vol 266 ◽  
pp. 257-263
Author(s):  
Wassana Wichai ◽  
Rutchadakorn Isarapatanapong ◽  
Niwat Anuwongnukroh ◽  
Surachai Dechkunakorn

This study investigated four commercially available NiTi orthodontic archwires from different manufactures for their grain structure and surface roughness.Four commercially available pre-formed NiTi orthodontic archwire (Ormco, Sentalloy, Highland and NIC) with diameter 0.016 x 0.022 inch2 were tested. The wire samples were polished and etched to evaluate the morphology and structure of wire surface. Each NiTi archwire was investigated under a reflected light microscope of an Optical Microscope to analyze its grain structure and size, in longitudinal surfaces. The surfaces of wire were qualitatively examined in the secondary electron mode at common magnification (500X). The surface roughness was also evaluated by a surface roughness tester. The descriptive statistic was evaluated the mean and standard deviation of surface roughness and Medcale T-Test was to test the mean difference of the surface roughness in each brands. This study showed an average grain size of 2-8 μm for each NiTi archwire. The wire surface of Ormco and Highland showed straiations along the longitudinal axes, however Sentalloy and NIC showed small pores on the wire surface. The surface roughness was 0.09 μm for Highland, 0.25 μm for Sentalloy, 0.28 μm for Ormco and 0.46 μm for NIC archwire. The Highland was smoothest and NIC was the roughest. There were in significant (p < 0.05) difference of surface roughness of each brands. The results showed that the four manufactures NiTi archwires were different in grain size, wire surface and surface roughness. During clinical application, these archwires may exhibit different mechanical properties, such as strength, hardness, ductity, and friction because of their microstructure.


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