Effects of Rapid Thermal Annealing on CdTe/CdS Solar Cell Fabrication

1996 ◽  
Vol 426 ◽  
Author(s):  
Y. A. Cho ◽  
W. J. Nam ◽  
H. S. Kim ◽  
G. Y. Yeom ◽  
J. K. Yoon ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Bulk Composition ◽  
Cross Sectional ◽  
Transmission Microscopy ◽  
X Ray ◽  
Cdte Thin Films

AbstractRapid thermal annealing (RTA) was applied to anneal polycrystalline CdTe thin films evaporated on CdS/ITO substrate and the effects of rapid thermal annealing temperatures and gas environments were studied. X-ray diffractometer (XRD), X-ray photoelectron spectroscopy(XPS), energy dispersive X-ray spectroscopy(EDX), cross-sectional transmission microscopy(TEM), and micro-EDX in TEM were used to characterize physical and chemical properties of rapid thermal annealed CdTe thin films. Complete CdTe/CdS photovoltaic cells were fabricated and I-V characteristics of these cells were measured under the illumination. Results showed that the bulk composition of CdTe remained stoichiometric to 550°C in the air environment and surface composition became Cd-rich. Cross-sectional TEM and micro-EDX showed columnar grains and micro-twins remained even after RTA, however, sulfur content in rapid thermal annealed CdTe caused by sulfur diffusion from CdS during the annealing was much smaller than that by furnace annealing. Among the investigated RTA temperatures and gas environments, the cell made with CdTe annealed at 550°C in the air showed the best solar energy conversion efficiency.

Effect of Microstructural Characteristics of Electroless Nickel Metallisation on Solderability to Pb-Free Solder Alloys

2005 ◽  
Author(s):  
Changqing Liu ◽  
David A. Hutt ◽  
Dezhi Li ◽  
Paul P. Conway
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Bulk Composition ◽  
Industrial Process ◽  
Surface Characteristics ◽  
Electroless Nickel ◽  
X Ray ◽  
N2 Atmosphere ◽  
Different Temperatures ◽  
Free Solder

This paper aims to gain an insight into the correlation between the microstructure and surface composition of electroless Ni-P and its behaviour during soldering with Pb free alloys including Sn-3.8Ag-0.7Cu, Sn-3.5Ag and Sn-0.7Cu. Ni-P coatings with different P contents were produced through an industrial process on copper metal substrates. The surface morphology of these coatings was observed by Scanning Electron Microscopy (SEM) and the bulk composition was analyzed by means of Energy Dispersive X-ray analysis (EDX). The mechanical properties of the coatings were evaluated by nano-indentation testing under different maximum loads. However, to understand the behaviour of P in Ni-P coatings and deterioration of the coating surfaces during exposure to air, the surfaces of the coatings were also characterised by X-ray Photoelectron Spectroscopy (XPS) for storage at different temperatures. The dependence of the solderability of Ni-P coatings on the storage time and temperature was investigated by wetting balance testing, using an inactive or active flux with or without an inert N2 atmosphere. Finally, the solderability of Ni-P coatings to Pb free solders is correlated with their composition and microstructure (e.g. surface characteristics).

Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
Po-ching Chen ◽  
Klaus Yung-jane Hsu ◽  
Joseph J. Loferski ◽  
Huey-liang Hwang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Plasma Oxidation ◽  
X Ray ◽  
Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

EFFECT OF ANNEALING AND SnO2 ADDITION ON PROPERTIES OF NANOSTRUCTURED ZnO THIN FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 1007-1011
Author(s):  
VIPIN KUMAR JAIN ◽  
PRAVEEN KUMAR ◽  
DEEPIKA BHANDARI ◽  
Y. K. VIJAY
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Atomic Ratio ◽  
Flash Evaporation ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Post Annealing ◽  
Zinc Tin Oxide ◽  
Evaporation Technique

In the present work, Zinc–Tin–Oxide (ZTO) thin films were deposited on glass substrate with varying concentration ( ZnO:SnO2 -100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZTO film were annealed in vacuum to study the thermal stability and to see the effects on the structural and optical properties. The XRF spectra revealed the presence of Zinc and Tin with varying concentration in ZTO thin films. XRD results show the crystallinity of the ZTO films was improved with increasing the concentration of SnO2 and post annealing. The surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. The variation of % composition shows as the concentration of SnO2 increases from 0 to 50%, the atomic ratio of Sn/Zn and O/Zn increases for both types of ZTO films and deficiency of oxygen has been appeared after annealing. The optical band gap was also found to be decreased for both types of films with increasing concentration of SnO2 .

Effects of Rapid Thermal Annealing on SiNx Capped MBE GaAs

1992 ◽  
Vol 262 ◽  
Author(s):  
Akira Ito ◽  
Akira Usami ◽  
Hiroyuki Ueda ◽  
Hiroyuki Kano ◽  
Takao Wada
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Deep Level ◽  
Error Function ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Complementary Error Function ◽  
Cap Layer ◽  
Transient Spectroscopy

ABSTRACTEffects of rapid thermal annealing (RTA) with a SiNx encapsulant on molecular beam epitaxial GaAs are studied with deep level transient spectroscopy (DLTS) measurements and x-ray photoelectron spectroscopy (XPS) measurements. The RTA was performed at various temperatures form 800°C to 1100°C for 6sec. The electron trap EL2 is produced by the RTA above 850°C The EL2 depth profile produced after the RTA is fitted with a complementary error function. The SiNx cap layer is more effective to prevent the formation of the EL2 than the SiO* cap layer during the RTA, because the critical temperature of the SiNx cap where the EL2 concentration starts to increase is higher than that of the SiOx cap. Slight increase of the oxidized Ga atoms is observed after the RTA near the cap surface. The enhancement of the EL2 trap is discussed considering the outdiffusion of Ga atoms into the cap layer during the RTA.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

The Fabrication of Fe-Doped TiCoSb Thin Films by Magnetron Sputtering and Rapid Thermal Annealing

2013 ◽  
Vol 341-342 ◽  
pp. 129-133
Author(s):  
Juan Qin ◽  
Niu Yi Sun ◽  
Guo Hua Wang ◽  
Min Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Seebeck Coefficient ◽  
Diffraction Patterns ◽  
P Type ◽  
Narrow Band Gap Semiconductors

TiCoSb-based half-Heusler compounds, which are narrow band gap semiconductors with a high Seebeck coefficient, have been intensively studied in bulk form but rarely in thin films. In this article TiFexCo1-xSb (x=0, 0.17) thin films were synthesized on n-type single crystal Si (100) and MgO (100) substrates by DC magnetron sputtering followed by rapid thermal annealing. The X-ray diffraction patterns show that Fe doping does not affect the crystallization temperature of TiCoSb phase, but seem to induce the formation of binary phases like TiSb. Hall measurements reveal that the undoped TiCoSb thin films are n-type semiconducting, while TiFe0.2Co0.8Sb turns to p-type with half-order higher carrier concentration of 1.5×1021cm-3. The vibrating sample magnetometer spectrum indicate that the TiCoSb thin film is non-magnetic and TiFexCo1-xSb (x=0.17) is weak magnetic.

Grafting of TiO2 on PMMA Film and Reusability in Photodegradation of Organic Dye

2016 ◽  
Vol 99 ◽  
pp. 17-21
Author(s):  
Rachan Klaysri ◽  
Sopita Wichaidit ◽  
Piyasan Praserthdam ◽  
Okorn Mekasuwandumrong
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Bulk Composition ◽  
Pmma Film ◽  
Glass Temperature ◽  
Scanning Calorimetry ◽  
X Ray ◽  
H Nmr ◽  
Ft Ir ◽  
Novel Method

Grafting TiO2 on PMMA was studied by atom-transfer radical-polymerization (ATRP). Each step in grafting process was monitored by fourier transform infrared spectroscopy (FT-IR), 1H NMR and 13C NMR spectra. The glass temperature of grafted-PMMA film was determined by using differential scanning calorimetry (DSC). The morphology and bulk composition were characterized by scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM-EDX). The surface composition was characterized by X-ray photoelectron spectroscopy (XPS). As results, a novel method of grafting TiO2 on PMMA was successfully grafted and confirmed in various techniques. The photocatlytic activity was evaluated under UV and visible light irradiation. The reusability of TiO2-g-PMMA films was studied in details.

scholarly journals Real time structural modification of epitaxial FePt thin films under x-ray rapid thermal annealing using undulator radiation

2007 ◽  
Vol 90 (25) ◽  
pp. 251901 ◽  
Author(s):  
J. R. Skuza ◽  
R. A. Lukaszew ◽  
E. M. Dufresne ◽  
D. A. Walko ◽  
C. Clavero ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Structural Modification ◽  
Undulator Radiation ◽  
X Ray ◽  
Fept Thin Films
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