scholarly journals Threshold Irradiation Dose for Amorphization of Silicon Carbide

1996 ◽  
Vol 439 ◽  
Author(s):  
L. L. Snead ◽  
S. J. Zinkle
Keyword(s):  
Silicon Carbide ◽  
Ion Irradiation ◽  
Major Axis ◽  
Published Data ◽  
Temperature Threshold ◽  
Temperature Dependent ◽  
Tem Analysis ◽  
Critical Dose ◽  
Silicon Ions ◽  
The Difference

AbstractThe amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electron and xenon irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1×10-3 dpa/s and with fission neutrons irradiated at 1×10-6 dpa/s irradiated to 1 5 dpa in the temperature range of ∼340 ±10K.

Tem analysis of multiple-energy arsenic implanted and Rta'd silicon

1987 ◽  
Vol 45 ◽  
pp. 246-247
Author(s):  
R.A. Herring
Keyword(s):  
Device Fabrication ◽  
High Concentration ◽  
Tem Analysis ◽  
Defect Clusters ◽  
High Fluences ◽  
Small Defect ◽  
Before And After ◽  
The Matrix ◽  
The Difference ◽  
Factor Type

Rapid thermal annealing (RTA) of ion-implanted Si is important for device fabrication. The defect structures of 2.5, 4.0, and 6.0 MeV As-implanted silicon irradiated to fluences of 2E14, 4E14, and 6E14, respectively, have been analyzed by electron diffraction both before and after RTA at 1100°C for 10 seconds. At such high fluences and energies the implanted As ions change the Si from crystalline to amorphous. Three distinct amorphous regions emerge due to the three implantation energies used (Fig. 1). The amorphous regions are separated from each other by crystalline Si (marked L1, L2, and L3 in Fig. 1) which contains a high concentration of small defect clusters. The small defect clusters were similar to what had been determined earlier as being amorphous zones since their contrast was principally of the structure-factor type that arises due to the difference in extinction distance between the matrix and damage regions.

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

scholarly journals Action and Entropy in Heat Engines: An Action Revision of the Carnot Cycle

Entropy ◽  
2021 ◽  
Vol 23 (7) ◽  
pp. 860
Author(s):  
Ivan R. Kennedy ◽  
Migdat Hodzic
Keyword(s):  
Heat Engine ◽  
Working Fluid ◽  
Field Energy ◽  
Carnot Cycle ◽  
Gibbs Potential ◽  
Atmospheric Gases ◽  
Temperature Dependent ◽  
Expansion Phase ◽  
Heat Engines ◽  
The Difference

Despite the remarkable success of Carnot’s heat engine cycle in founding the discipline of thermodynamics two centuries ago, false viewpoints of his use of the caloric theory in the cycle linger, limiting his legacy. An action revision of the Carnot cycle can correct this, showing that the heat flow powering external mechanical work is compensated internally with configurational changes in the thermodynamic or Gibbs potential of the working fluid, differing in each stage of the cycle quantified by Carnot as caloric. Action (@) is a property of state having the same physical dimensions as angular momentum (mrv = mr2ω). However, this property is scalar rather than vectorial, including a dimensionless phase angle (@ = mr2ωδφ). We have recently confirmed with atmospheric gases that their entropy is a logarithmic function of the relative vibrational, rotational, and translational action ratios with Planck’s quantum of action ħ. The Carnot principle shows that the maximum rate of work (puissance motrice) possible from the reversible cycle is controlled by the difference in temperature of the hot source and the cold sink: the colder the better. This temperature difference between the source and the sink also controls the isothermal variations of the Gibbs potential of the working fluid, which Carnot identified as reversible temperature-dependent but unequal caloric exchanges. Importantly, the engine’s inertia ensures that heat from work performed adiabatically in the expansion phase is all restored to the working fluid during the adiabatic recompression, less the net work performed. This allows both the energy and the thermodynamic potential to return to the same values at the beginning of each cycle, which is a point strongly emphasized by Carnot. Our action revision equates Carnot’s calorique, or the non-sensible heat later described by Clausius as ‘work-heat’, exclusively to negative Gibbs energy (−G) or quantum field energy. This action field complements the sensible energy or vis-viva heat as molecular kinetic motion, and its recognition should have significance for designing more efficient heat engines or better understanding of the heat engine powering the Earth’s climates.

scholarly journals Synergy Effects in Electromagnetic Properties of Phosphate Ceramics with Silicon Carbide Whiskers and Carbon Nanotubes

2019 ◽  
Vol 9 (20) ◽  
pp. 4388 ◽  
Author(s):  
Artyom Plyushch ◽  
Jan Macutkevič ◽  
Polina Kuzhir ◽  
Aliaksei Sokal ◽  
Konstantin Lapko ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Carbide ◽  
Wide Frequency Range ◽  
Electromagnetic Properties ◽  
Aluminium Phosphate ◽  
Silicon Carbide Whiskers ◽  
Synergy Effects ◽  
Multi Walled Carbon Nanotubes ◽  
The Difference ◽  
Walled Carbon Nanotubes

Hybrid composite materials based on an aluminium phosphate matrix with silicon carbide whiskers and multi-walled carbon nanotubes were studied in a wide frequency range (20 Hz to 36 GHz). It was demonstrated, that the addition of the silicon carbide whiskers enhances the dielectric permittivity and conductivity. This was explained by the difference in tunnelling parameters. Hybrid ceramics with nanotubes and whiskers also exhibits substantially improved electromagnetic shielding properties. The hybrid ceramics with 10 wt. % silicon carbide whiskers and a 1 mm thick 1.5 wt. % carbon nanotube layer, show higher than 50% absorption of electromagnetic radiation.

Characterization of oxide particles in ODS austenitic stainless steel after heavy ion irradiation up to high doses

2011 ◽  
Vol 1298 ◽  
Author(s):  
Hiroshi Oka ◽  
Yosuke Yamazaki ◽  
Hiroshi Kinoshita ◽  
Naoyuki Hashimoto ◽  
Somei Ohnuki ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Austenitic Stainless Steel ◽  
Ion Irradiation ◽  
Hot Extrusion ◽  
Oxide Dispersion Strengthened ◽  
Complex Oxide ◽  
Heavy Ion ◽  
Oxide Particles ◽  
The Difference ◽  
High Doses

ABSTRACTOxide dispersion strengthened austenitic stainless steel (ODS316), which is based on advanced SUS316 steel, has been developed by mechanically alloying and hot extrusion. Hafnium and titanium were added to make a fine distribution of oxide particles. The stability of oxide particles dispersed in ODS316 under irradiation was evaluated after 250 keV Fe+ irradiation up to high doses at 500 °C. TEM observation and EDS analysis indicated that fine complex oxide particles with Y, Hf and Ti were mainly dispersed in the matrix. There are no significant changes in the distribution and the size of oxide particles after irradiation. It was also revealed that the constitution ratio of Ti in complex oxide appeared to be decreased after irradiation. This diffuse-out of Ti during irradiation could be explained by the difference in oxide formation energy among alloying elements.

The interaction of bovine milk caseins with the detergent sodium dodecyl sulphate. II. The effect of detergent binding on spectral properties of caseins

1970 ◽  
Vol 37 (2) ◽  
pp. 259-267 ◽  
Author(s):  
G. C. Cheeseman ◽  
Dorothy J. Knight
Keyword(s):  
Sodium Dodecyl Sulphate ◽  
Sodium Dodecyl ◽  
Bovine Milk ◽  
Difference Spectrum ◽  
Temperature Dependent ◽  
Difference Spectra ◽  
Negative Change ◽  
Tryptophan Residues ◽  
Hydrophobic Binding ◽  
The Difference

SummaryThe dissociation of casein aggregates by the detergent sodium dodecyl sulphate (SDS) gave rise to difference spectra and these spectra were characteristic for each of the different types of casein. Increase in absorption by the chromophore groups, tyrosine and tryptophan, when αs1- and β-casein aggregates were dissociated indicated binding of the detergent at regions of the molecule containing these residues. A decrease in absorption when κ-casein was dissociated indicated that the tyrosine and tryptophan residues were not in the region of the molecule to which the detergent was bound and that in the κ-casein aggregate these residues were in a more hydrophobic environment. Peaks on the difference spectra were obtained at 280 and 288 nm for αs1-casein and 284 and 291 nm for β-casein and troughs at 278 and 286 nm for κ-casein. The difference spectrum reached a maximum value when the αsl- and β-casein aggregates were dissociated and the further binding of SDS did not alter this value. The large negative change in the difference spectrum of κ-casein did not occur until after most of the aggregates were dissociated and did not reach a maximum until binding with SDS was complete. The value obtained for ΔOD was found to be temperature-dependent for β-casein-SDS interaction, but not for αs1- and κ-casein. Changes in spectra were also observed when αs1- and κ-casein interacted to form aggregates. The data obtained confirmed the importance of hydrophobic binding in casein aggregate formation and indicated the possible involvement of tyrosine and tryptophan residues in this binding.

Theory of ultrasonic attenuation in one and two dimensional metals

1976 ◽  
Vol 54 (14) ◽  
pp. 1454-1460 ◽  
Author(s):  
T. Tiedje ◽  
R. R. Haering
Keyword(s):  
Ultrasonic Attenuation ◽  
Three Dimensional ◽  
Electronic Systems ◽  
Two Dimensional ◽  
Temperature Dependent ◽  
One Dimensional ◽  
The Difference

The theory of ultrasonic attenuation in metals is extended so that it applies to quasi one and two dimensional electronic systems. It is shown that the attenuation in such systems differs significantly from the well-known results for three dimensional systems. The difference is particularly marked for one dimensional systems, for which the attenuation is shown to be strongly temperature dependent.

Determination of Resistance to Abrasive Wear. VIII. Influence of Softeners in Tests with the Akron-Croydon and Du Pont Machines

1949 ◽  
Vol 22 (1) ◽  
pp. 259-262
Author(s):  
J. F. Morley
Keyword(s):  
Unit Area ◽  
Published Data ◽  
The Road ◽  
Abrasive Surface ◽  
Abrasive Power ◽  
The Difference ◽  
On The Road ◽  
The Right ◽  
Abrasion Testing

Abstract These experiments indicate that softeners can influence abrasion resistance, as measured by laboratory machines, in some manner other than by altering the stress-strain properties of the rubber. One possible explanation is that the softener acts as a lubricant to the abrasive surface. Since this surface, in laboratory abrasion-testing machines, is relatively small, and comes repeatedly into contact with the rubber under test, it seems possible that it may become coated with a thin layer of softener that reduces its abrasive power. It would be interesting in this connection to try an abrasive machine in which a long continuous strip of abrasive material was used, no part of it being used more than once, so as to eliminate or minimize this lubricating effect. The fact that the effect of the softener is more pronounced on the du Pont than on the Akron-Croydon machine lends support to the lubrication hypothesis, because on the former machine the rate of wear per unit area of abrasive is much greater. Thus in the present tests the volume of rubber abraded per hr. per sq. cm. of abrasive surface ranges from 0.03 to 0.11 cc. on the du Pont machine and from 0.0035 to 0.0045 cc. on the Akron-Croydon machine. On the other hand, if the softener acts as a lubricant, it would be expected to reduce considerably the friction between the abrasive and the rubber and hence the energy used in dragging the rubber over the abrasive surface. The energy figures given in the right-hand columns of Tables 1 and 3, however, show that there is relatively little variation between the different rubbers. As a test of the lubrication hypothesis, it would be of interest to vary the conditions of test so that approximately the same amount of rubber per unit area of abrasive is abraded in a given time on both machines; this should show whether the phenomena observed under the present test conditions are due solely to the difference in rate of wear or to an inherent difference in the type of wear on the two machines. This could most conveniently be done by considerably reducing the load on the du Pont machine. In the original work on this machine the load was standardized at 8 pounds, but no figures are quoted to show how abrasion loss varies with the load. As an addition to the present investigation, it is proposed to examine the effect of this variation with special reference to rubbers containing various amounts and types of softener. Published data on the influence of softeners on the road wear of tire rubbers do not indicate anything like such large effects as are shown by the du Pont machine. This throws some doubt on the value of this machine for testing tire tread rubbers, a conclusion which is confirmed by information obtained from other workers.

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

scholarly journals Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

JOM ◽  
2021 ◽  
Author(s):  
Alexander J. Leide ◽  
Richard I. Todd ◽  
David E. J. Armstrong
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Residual Stresses ◽  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Compressive Residual Stresses

AbstractSilicon carbide is desirable for many nuclear applications, making it necessary to understand how it deforms after irradiation. Ion implantation combined with nanoindentation is commonly used to measure radiation-induced changes to mechanical properties; hardness and modulus can be calculated from load–displacement curves, and fracture toughness can be estimated from surface crack lengths. Further insight into indentation deformation and fracture is required to understand the observed changes to mechanical properties caused by irradiation. This paper investigates indentation deformation using high-resolution electron backscatter diffraction (HR-EBSD) and Raman spectroscopy. Significant differences exist after irradiation: fracture is suppressed by swelling-induced compressive residual stresses, and the plastically deformed region extends further from the indentation. During focused ion beam cross-sectioning, indentation cracks grow, and residual stresses are modified. The results clarify the mechanisms responsible for the modification of apparent hardness and apparent indentation toughness values caused by the compressive residual stresses in ion-implanted specimens.

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