scholarly journals Fabrication and Characterization of Pzt Thin-Film on Bulk Micromachined Si Motion Detectors

1998 ◽  
Vol 541 ◽  
Author(s):  
T.J. Garino ◽  
B.A. Tuttle ◽  
G. Laguna ◽  
P. Clem
Keyword(s):  
Piezoelectric Effect ◽  
Device Fabrication ◽  
Silicon Compound ◽  
Platinum Electrodes ◽  
Silicon Etching ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
A Charge ◽  
Motion Detectors

AbstractMotion detectors consisting of Pb(ZrxTi(1−x))O3 (PZT) thin films, between platinum electrodes, on micromachined silicon compound clamped-clamped or cantilever beam structures were fabricated using either hot KOH or High Aspect Ratio Silicon Etching (HARSE) to micromnachine the silicon. The beams were designed such that a thicker region served as a test mass that produced stress at the top of the membrane springs that supported it when the object to which the detector was mounted moved. The PZT film devices were placed on these membranes to generate a charge, or a voltage, in response to the stress through the piezoelectric effect. Issues of integration of the PZT device fabrication process with the two etching processes are discussed. The effects of PZT composition and device geometry on the response of the detectors to motion is reported and discussed.

Measurement of d15 Shear-Mode Piezoelectric Response in PZT Thin Film

2009 ◽  
Vol 421-422 ◽  
pp. 95-98
Author(s):  
Tsuyoshi Aoki ◽  
Shigeyoshi Umemiya ◽  
Masaharu Hida ◽  
Kazuaki Kurihara
Keyword(s):  
Thin Film ◽  
Fem Analysis ◽  
Active Part ◽  
Piezoelectric Response ◽  
Small Displacement ◽  
Shear Mode ◽  
Mems Devices ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
Piezoelectric Constants

Piezoelectric films using d15 shear-mode can be applied to many useful MEMS devices. The small displacement derived from the d15 shear-mode was directly observed by a SPM measurement. An isolated PZT(52/48) active part having a pair of driving Cu electrodes was processed in a 5 m-thick sputtering film. The displacement measurement of the active part and its FEM analysis suggested that the estimated d15 piezoelectric constant of the film was 590 pm/V. And, the d31 value of the film was -120 pm/V measured by a conventional cantilever method. The obtained piezoelectric constants of the PZT film are near those of bulk.

Characterization of Thermal Oxides of Laser Annealed Polysilicon

1981 ◽  
Vol 4 ◽  
Author(s):  
Rajiv R. Shah ◽  
Robert Mays ◽  
D. Lloyd Crosthwait
Keyword(s):  
Laser Processing ◽  
Single Crystal Silicon ◽  
Electrical Characterization ◽  
Device Fabrication ◽  
Breakdown Field ◽  
Guard Ring ◽  
Crystal Silicon ◽  
Process Sequence ◽  
Thermal Oxide

ABSTRACTWe report an investigation of the effects of laser processing on the thermal oxides of polysilicon. LPCVD polysilicon, 500 nm thick, deposited on 500 nm thermal oxide of single crystal silicon was laser processed at various stages in the process sequence for device fabrication. Effects of CW Ar+ and pulsed 1.06 and 0.53 μm laser processing were investigated. Laser annealed polysilicon was oxidized in a steam ambient. Using a second level of polysilicon, guard ring diode and capacitors were fabricated. Electrical characterization revealed an improvement in breakdown field strengths of these oxides without deleterious effects on any of the associated interfaces.

scholarly journals Measuring and characterizing the line profile of HARPS with a laser frequency comb

2020 ◽  
Vol 645 ◽  
pp. A23
Author(s):  
F. Zhao ◽  
G. Lo Curto ◽  
L. Pasquini ◽  
J. I. González Hernández ◽  
J. R. De Medeiros ◽  
...  
Keyword(s):  
Line Profile ◽  
Frequency Comb ◽  
Laser Frequency ◽  
Line Intensities ◽  
Measured Position ◽  
Wavelength Scale ◽  
Spectral Line Profile ◽  
The Stability ◽  
A Charge

Aims. We study the 2D spectral line profile of the High Accuracy Radial Velocity Planet Searcher (HARPS), measuring its variation with position across the detector and with changing line intensity. The characterization of the line profile and its variations are important for achieving the precision of the wavelength scales of 10−10 or 3.0 cm s−1 necessary to detect Earth-twins in the habitable zone around solar-like stars. Methods. We used a laser frequency comb (LFC) with unresolved and unblended lines to probe the instrument line profile. We injected the LFC light – attenuated by various neutral density filters – into both the object and the reference fibres of HARPS, and we studied the variations of the line profiles with the line intensities. We applied moment analysis to measure the line positions, widths, and skewness as well as to characterize the line profile distortions induced by the spectrograph and detectors. Based on this, we established a model to correct for point spread function distortions by tracking the beam profiles in both fibres. Results. We demonstrate that the line profile varies with the position on the detector and as a function of line intensities. This is consistent with a charge transfer inefficiency effect on the HARPS detector. The estimate of the line position depends critically on the line profile, and therefore a change in the line amplitude effectively changes the measured position of the lines, affecting the stability of the wavelength scale of the instrument. We deduce and apply the correcting functions to re-calibrate and mitigate this effect, reducing it to a level consistent with photon noise.

Afm Studies of Surface Roughness of Borophosphosilicate Glass (BPSG) Films and Their Impact on Defect Detection Capability for Sub Micron Vlsi Technology

1992 ◽  
Vol 280 ◽  
Author(s):  
H. Rojhantalab ◽  
M. Moinpour ◽  
N. Peter ◽  
M.L.A. Dass ◽  
W. Hough ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Defect Detection ◽  
Device Fabrication ◽  
Interlayer Dielectric ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Vlsi Technology ◽  
Borophosphosilicate Glass

ABSTRACTChemically vapor deposited borophosphosilicate glass (BPSG) has been widely used in microelectronic device fabrication as interlayer dielectric film due to its excellent planarization, gettering and flow properties. With device geometry reducing to sub micron levels, there is an increasingly greater emphasis on detection and elimination of sub micron defects particularly on deposited film. In this paper, we report on the evaluation and characterization of the surface roughness of BPSG films of various thicknesses and film compositions deposited on Si substrates using the Atomic Force Microscopy (AFM). The effects of high temperature densification process on the surface roughness are presented. The defect detection capabilities of conventional laser-based particle counters with respect to the surface roughness of BPSG films are investigated.

scholarly journals Synchrotron X-ray Microdiffraction Images of Polarization Switching in Epitaxial PZT Capacitors with Pt and SrRuO3 Top Electrodes

2003 ◽  
Vol 784 ◽  
Author(s):  
Dal-Hyun Do ◽  
Dong Min Kim ◽  
Chang-Beom Eom ◽  
Eric M. Dufresne ◽  
Eric D. Isaacs ◽  
...  
Keyword(s):  
Thin Film ◽  
Bottom Electrode ◽  
Sputter Deposition ◽  
Ferroelectric Polarization ◽  
X Rays ◽  
X Ray ◽  
Pzt Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Switchable Polarization

ABSTRACTThe evolution of stored ferroelectric polarization in PZT thin film capacitors was imaged using synchrotron x-ray microdiffraction with a submicron-diameter focused incident x-ray beam. To form the capacitors, an epitaxial Pb(Zr,Ti)O3 (PZT) thin film was deposited on an epitaxially-grown conductive SrRuO3 (SRO) bottom electrode on a SrTiO3 (STO) (001) substrate. Polycrystalline SRO or Pt top electrodes were prepared by sputter deposition through a shadow mask and subsequent annealing. The intensity of x-ray reflections from the PZT film depended on the local ferroelectric polarization. With 10 keV x-rays, regions of opposite polarization differed in intensity by 26% in our PZT capacitor with an SRO top electrode. Devices with SRO electrodes showed just a 25% decrease in the remnant polarization after 107 switching cycles. In devices with Pt top electrodes, however, the switchable polarization decreased a by 70% after only 5×104 cycles.

Rapid structural and chemical characterization of ternary phase diagrams using synchrotron radiation

2003 ◽  
Vol 18 (10) ◽  
pp. 2522-2527 ◽  
Author(s):  
E. D. Specht ◽  
A. Rar ◽  
G. M. Pharr ◽  
E. P. George ◽  
P. Zschack ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Chemical Characterization ◽  
Lattice Parameter ◽  
Ternary Alloys ◽  
Charge Coupled Device ◽  
Ternary Phase Diagrams ◽  
Wide Range ◽  
Combinatorial Materials ◽  
A Charge

A technique based on synchrotron radiation was developed that allows for rapid structural and chemical characterization of ternary alloys over a wide range of composition. The technique was applied to isothermal sections of the Cr–Fe–Ni system grown on Al2O3(0001) sapphire substrates by sequential deposition of layers of graded.thickness followed by annealing to interdiffuse the elements. A film spanning the Cr–Fe–Ni ternary system was measured in 4 h at a resolution of 2 at.% by rastering the sample under a focused beam of synchrotron radiation while simultaneously measuring the diffraction pattern with a charge-coupled device detector to determine crystallographic phases, texture, and lattice parameters and also measuring the x-ray fluorescence with an energy-dispersive detector to determine elemental composition. Maps of phase composition and lattice parameter as a function of composition for several annealing treatments were found to be consistent with equilibrium values. The technique will be useful in combinatorial materials design.

Fabrication And Characterization Of SMA∕PZT Thin Film Heterostructures

2010 ◽  
Author(s):  
Nitin Choudhary ◽  
Davinder Kaur ◽  
Dinesh K. Aswal ◽  
Anil K. Debnath
Keyword(s):  
Thin Film ◽  
Pzt Thin Film ◽  
Fabrication And Characterization

scholarly journals Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

1998 ◽  
Vol 537 ◽  
Author(s):  
Daniel Hofstetter ◽  
Robert L. Thornton ◽  
Linda T. Romano ◽  
David P. Bour ◽  
Michael Kneissl ◽  
...  
Keyword(s):  
Ion Beam ◽  
Device Fabrication ◽  
Distributed Feedback ◽  
Coupling Scheme ◽  
Optically Pumped ◽  
Ion Beam Etching ◽  
Measurement Results ◽  
Dfb Laser ◽  
First Time

AbstractWe present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1. 1 A were observed in 500 μm long and 10 μm wide devices. The 3rd order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.

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