Nucleation and Growth of CVD Cu Films

1999 ◽  
Vol 564 ◽  
Author(s):  
R. Kröger ◽  
M. Eizenberg ◽  
D. Cong ◽  
N. Yoshida ◽  
L. Y. Chen ◽  
...  
Keyword(s):  
Seed Layer ◽  
Nucleation And Growth ◽  
Growth Stages ◽  
Initial Growth ◽  
Island Growth ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Cu Film

AbstractIn this work the nucleation and growth of CVD Cu on MOCVD TiN barrier layer as well as on PVD Ta with and without a PVD Cu seed layer on top were studied. Scanning and transmission electron microscopy was used to characterize the dependence of morphology and microstructure on deposition time. XRD measurements were carried out to study the orientation of the polycrystalline films. Atomic force microscopy was applied to investigate the surface topography. A random crystal orientation and an amorphous interlayer between the CVD Cu film and the barrier - leading to a poor adhesion performance of the CVD Cu films - were obtained on Ta and TiN, where island growth can be observed. A CVD Cu film deposited on top of PVD Cu leads to a highly preferred <111> orientation and a significantly improved adhesion of the Cu film. A PVD Cu seed layer as thin as 60 Å was found to produce an epitaxially grown <111> textured Cu film. These results highlight the importance of the initial growth stages for both morphology and adhesion of the CVD Cu films.

A Comparison of AFM, SEM, and TEM Analysis of AL/SI/CU Thin Films

1992 ◽  
Vol 260 ◽  
Author(s):  
K. L. Westra ◽  
D. J. Thomson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Finite Size ◽  
Sem Analysis ◽  
Tem Analysis ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Sputter Deposited

ABSTRACTAtomic Force microscopy, scanning electron microscopy, and transmission electron microscopy was used to study Al/Si/Cu films sputter deposited at 2 and 45 mTorr. AFM and SEM analysis shows the films to consist of columnar structures commonly seen in PVD deposited thin films, while the TEM analysis showed the films be polycrystalline. Comparing the columnar structures seen in the AFM and SEM study to the grains found in the TEM study, we conclude that the columns consist of single grains. Thus for these films AFM or SEM analysis can be used to determine the grain size. Finally, an AFM scan of a Al/Si/Cu deposited via was performed. The AFM image clearly shows the high resolution of the AFM, while it also illustrates the problems caused by the finite size of the AFM tip.

Deposition of Cu Films for Laser Mirror by Partially Ionized Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Seok-Keun Koh ◽  
Young-Soo Yoon ◽  
Ki-Hwan Kim ◽  
Hong-Gui Jang ◽  
Hyung-Jin Jung
Keyword(s):  
Surface Roughness ◽  
Room Temperature ◽  
Film Surface ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized ◽  
Acceleration Voltage ◽  
Beam Deposition

AbstractPartially ionized beam deposition of Cu thin films on glass at room temperature were carried out to fabricate Cu laser mirrors with good structural and reflectance properties. At a constant film thickness of 600 Å, the grain size of as-grown Cu films increased with acceleration voltage, and there was no indication of defects such as cracks and/or large pores in the film surface as shown in scanning electron microscopy images. Root-mean-square(Rms) surface roughnesses of the films with thicknesses of 600 Å were measured by atomic force microscopy. RmS surface roughness increased when acceleration voltage increased from 0 kV to 2 kV, but decreased at the acceleration voltage of 3 kV. RmS surface roughness of the film grown at 4 kV, however, increased again. At the acceleration voltage of 3 kV, reflectance of the films increased with the film thickness until 600 Å and decreased at the film thickness of 800 Å. The reflectance results showed that the Cu film deposited at 3 kV had higher reflectance than that of others. Our results suggest that it is possible to grow the Cu film with good structural and optical properties on glass substrate at room temperature by partially ionized beam deposition.

Compliance at the GaSb/GaP Interface by Misfit Dislocations Array

2011 ◽  
Vol 324 ◽  
pp. 85-88
Author(s):  
Salim El Kazzi ◽  
Ludovic Desplanque ◽  
Christophe Coinon ◽  
Yi Wang ◽  
Pierrre Ruterana ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Energy ◽  
Misfit Dislocations ◽  
Initial Growth ◽  
Electron Diffraction Analysis ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We study the initial growth of 10 monolayers (MLs) of GaSb on a (001) GaP substrate. Transmission electron microscopy and reflection high energy electron diffraction analysis show that an Sb-rich GaP surface promotes the formation of a 90° misfit dislocation array at the epi-substrate interface. Using atomic force microscopy, we investigate the influence of the growth temperature and the growth rate on the formation and the shape of GaSb islands.

Epitaxial Growth of Nb Films and Nb/Cu Bilayers on A12O3 Substrates by DC Magnetron Sputtering

1998 ◽  
Vol 528 ◽  
Author(s):  
R. Loloee ◽  
M.A. Crimp ◽  
W. Zhu ◽  
W.P. Pratt
Keyword(s):  
Electron Microscopy ◽  
Sputter Deposition ◽  
Dc Magnetron Sputtering ◽  
High Quality ◽  
Cu Films ◽  
Force Microscopy ◽  
Sputtered Films ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Transmission Electron

AbstractEpitaxial single crystal Nb films have been grown by sputter deposition on (1 1 2 0) sapphire substrates. Subsequently, high quality epitaxial Cu films, with two orientation variants, have been grown onto the epitaxial Nb films. The sputtered films have been characterized using atomic force microscopy, electron backscattered patterns, and conventional transmission electron microscopy.

Comparative Analysis of the Nucleation and Growth of Copper on Different Low-k Polymers

2001 ◽  
Vol 714 ◽  
Author(s):  
V. Zaporojtchenko ◽  
J. Erichsen ◽  
T. Strunskus ◽  
K. Behnke ◽  
F. Faupel ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Depth Profiling ◽  
Nucleation And Growth ◽  
Force Microscopy ◽  
Teflon Af ◽  
Atomic Force ◽  
Transmission Electron ◽  
Beam Depth ◽  
Low K

ABSTRACTIn this work we present investigations of the nucleation and growth of evaporated copper on several low-k polymers. The evolving interfaces were characterized using transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The results were compared between the PMDA/ODA polyimide, Teflon AF 1601 and Silk®. A diffusion coefficient for copper atoms in Silk® determined by low energy ion-beam depth profiling in conjunction with XPS is reported.

TEM/AFM correlative studies of thin-film metallization

1992 ◽  
Vol 50 (2) ◽  
pp. 1414-1415
Author(s):  
N. David Theodore ◽  
Renu Sharma ◽  
Juan Carrejo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Semiconductor Industry ◽  
Cu Films ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Complementary Techniques ◽  
Afm Micrographs

Since the invention of AFM (atomic force microscopy) applications of the technique have grown from year to year. It is expected that with time, there will be an increased use of AFM in the semiconductor industry for analysis of surface-topography and microstructure of thin films and heterostructures. However, before the technique can be used on its own for analyzing the behavior of thin films, it is necessary to establish legitimate areas of application of the technique. The present study uses AFM and TEM (transmission electron-microscopy) to study a few examples of thin-film metallizations and then looks at the extent of correlation between the two. It turns out that TEM and AFM work very well as complementary techniques. Caution is required in interpreting AFM micrographs.As examples of metallization Al(Cu), polysilicon and TiW thin films were investigated using AFM and TEM. Al(1.5%Cu) films were sputtered onto SiO2/Si substrates for ∼1 second (unbiased) at a substrate temperature of 450°C.

The Heteroepitaxial Nucleation and Growth of Metal Oxides by Llvsztu Oxidation

2000 ◽  
Vol 648 ◽  
Author(s):  
Mridula D. Bharadwaj ◽  
Gnang-wen Zhou ◽  
Judith C. Yang
Keyword(s):  
Electron Microscopy ◽  
Water Vapor ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Cu Film ◽  
Cu Oxidation

AbstractHere we report our investigations on the initial stages of Cu(OO1) oxidation in dry and moist atmosphere using in situ ultra high vacuum (UHV) transmission electron microscopy (TEM), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Cu20 islands were observed to grow 3-dimensionally into the Cu film as seen through the above mentioned techniques. Further, we discuss our interpretation of the experimental observations that presence of water vapor in the oxidizing atmosphere retards the rate of Cu oxidation and Cu20 shows surprising reduction when exposed to water vapor.

The nature of islanding in the InGaAs / GaAs epitaxial system

2000 ◽  
Vol 648 ◽  
Author(s):  
T. Walther ◽  
A.G. Cullis ◽  
D. J. Norris ◽  
M. Hopkinson
Keyword(s):  
Molecular Beam ◽  
Significant Degree ◽  
Island Growth ◽  
Force Microscopy ◽  
Stages Of Growth ◽  
Self Organized ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Device Applications

AbstractThe interest in the phenomenon of islanding in a range of semiconductor systems is in part due to the fundamental importance of the Stranski-Krastanow transition but also driven by potential device applications of self-organized quantum dot arrays. However, the mechanism underlying the island formation is still to a significant degree unclear. In the present work, we focus on the epitaxial InGaAs / GaAs(001) system, with layer deposition by molecular beam epitaxy. Atomic force microscopy is used to measure the surface topography of nominally 4nm thick InxGa1-xAs films. It is shown that the growth mode switches abruptly from flat layer to island growth if a critical Indium composition of x(In)≍0.25 is reached. The structure of such layers during early stages of growth is examined using energy-filtered transmission electron microscopy. Indium gradients in the islanded layers are measured and the driving force for the islanding transition itself is considered.

Scanning tunneling microscopy and atomic force microscopy: New tools for biology

1989 ◽  
Vol 47 ◽  
pp. 778-779
Author(s):  
CE Bracker ◽  
P. K. Hansma
Keyword(s):  
Physical Property ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Small Scale ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
New Family ◽  
Small Probe ◽  
Atomic Force ◽  
Transmission Electron

A new family of scanning probe microscopes has emerged that is opening new horizons for investigating the fine structure of matter. The earliest and best known of these instruments is the scanning tunneling microscope (STM). First published in 1982, the STM earned the 1986 Nobel Prize in Physics for two of its inventors, G. Binnig and H. Rohrer. They shared the prize with E. Ruska for his work that had led to the development of the transmission electron microscope half a century earlier. It seems appropriate that the award embodied this particular blend of the old and the new because it demonstrated to the world a long overdue respect for the enormous contributions electron microscopy has made to the understanding of matter, and at the same time it signalled the dawn of a new age in microscopy. What we are seeing is a revolution in microscopy and a redefinition of the concept of a microscope.Several kinds of scanning probe microscopes now exist, and the number is increasing. What they share in common is a small probe that is scanned over the surface of a specimen and measures a physical property on a very small scale, at or near the surface. Scanning probes can measure temperature, magnetic fields, tunneling currents, voltage, force, and ion currents, among others.

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