Optimization of the Ion-Cut Process in Si and SiC

AbstractH+-implantation is the basis for an ion-cut process, which combines hydrophilic wafer bonding, to produce heterostructures over a wide range of materials. This process has been successfully applied in Si to produce a commercial silicon-on-insulator material. The efficacy of implantation to produce thin-film separation was studied by investigation of H+-induced exfoliation in Si and SiC. Experiments were done to isolate the effects of the hydrogen chemistry from that of implant damage. Damage is manipulated independently of H+ dosage by a variety of techniques ranging from elevated temperature irradiation to a two-step implantation scheme in Si, and the use of channeled-ion implantation in SiC. The results will demonstrate that such schemes can significantly reduce the critical dose for exfoliation.

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Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Micromachines ◽

10.3390/mi12080946 ◽

2021 ◽

Vol 12 (8) ◽

pp. 946

Author(s):

Zhihao Ren ◽

Jikai Xu ◽

Xianhao Le ◽

Chengkuo Lee

Keyword(s):

Thin Film ◽

Wafer Bonding ◽

Composite Structures ◽

High Speed ◽

Silicon On Insulator ◽

Wearable Electronics ◽

Next Generation ◽

Bonding Technology ◽

Film Transfer ◽

Bandgap Semiconductors

Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.

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Nondestructive Thin Film Defect Analysis of Silicon‐on‐Insulator Layers Made by Zone‐Melt Recrystallization and Wafer Bonding

Journal of The Electrochemical Society ◽

10.1149/1.2086341 ◽

1990 ◽

Vol 137 (12) ◽

pp. 3975-3977

Author(s):

M. J. J. Theunissen ◽

A. H. Goemans ◽

A. J. R. de Kock ◽

J. Haisma ◽

C. W. T. Bulle‐Lieuwma ◽

...

Keyword(s):

Thin Film ◽

Wafer Bonding ◽

Silicon On Insulator ◽

Defect Analysis ◽

Insulator Layers ◽

Film Defect ◽

Zone Melt

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Wafer Bonding and Layer Transfer For Thin Film Ferroelectrics

MRS Proceedings ◽

10.1557/proc-748-u11.7 ◽

2002 ◽

Vol 748 ◽

Cited By ~ 4

Author(s):

Jennifer L. Ruglovsky ◽

Young-Bae Park ◽

Cecily A. Ryan ◽

Harry A. Atwater

Keyword(s):

Thin Film ◽

Ion Implantation ◽

Single Crystals ◽

Wafer Bonding ◽

Crystalline Silicon ◽

Sacrificial Layer ◽

Bubble Formation ◽

Ferroelectric Materials ◽

Silicon Substrates ◽

Layer Transfer

ABSTRACTWe report on the layer transfer of thin ferroelectric materials onto silicon substrates. H+ and He+ ion implantation created a buried sacrificial layer in the c-cut BaTiO3 and LiNbO3 single crystals. Bubble formation and thermodynamics of cavity at the bonding interface have been investigated, and single crystal thin film layers were transferred onto crystalline silicon substrates. We have found that defects generated by ion implantation in ferroelectric materials can be significantly recovered with the subsequent annealing for layer splitting.

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Analysis of thin‐film silicon‐on‐insulator structures formed by low‐energy oxygen ion implantation

Journal of Applied Physics ◽

10.1063/1.349257 ◽

1991 ◽

Vol 70 (7) ◽

pp. 3605-3612 ◽

Cited By ~ 33

Author(s):

Y. Li ◽

J. A. Kilner ◽

A. K. Robinson ◽

P. L. F. Hemment ◽

C. D. Marsh

Keyword(s):

Thin Film ◽

Ion Implantation ◽

Low Energy ◽

Silicon On Insulator ◽

Oxygen Ion ◽

Thin Film Silicon ◽

Oxygen Ion Implantation

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Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2009.08.017 ◽

2009 ◽

Vol 267 (21-22) ◽

pp. 3535-3538

Author(s):

Tu Anh Trinh ◽

In Seok Hong ◽

Hwa Ryun Lee ◽

Yong Sub Cho

Keyword(s):

Thin Film ◽

Elevated Temperature ◽

Ion Implantation ◽

Thermal Oxidation ◽

Zno Thin Film ◽

Photoluminescence Properties ◽

Sapphire Substrates

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Synthesis of Soi Materials Using Plasma Immersion Ion Implantation

MRS Proceedings ◽

10.1557/proc-438-333 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 6

Author(s):

Paul K. Chu

Keyword(s):

Integrated Circuits ◽

Ion Implantation ◽

Wafer Bonding ◽

Processing Time ◽

Silicon On Insulator ◽

Current Status ◽

Silicon Substrates ◽

Wafer Size ◽

Plasma Immersion Ion Implantation ◽

Work Done

AbstractAs the dimensions of integrated circuits shrink towards the deep sub-micromeLer regime, silicon-on-insulator is regarded to be more favorable than silicon substrates. The biggest drawback of SOI is cost which will become more critical for next generation 300-nm silicon wafers. Plasma immersion ion implantation (PIII) provides a viable alternative for the fabrication of SOI wafers as the processing time is very short and independent of wafer size. Pill is being employed to synthesize two types of SOI materials, SPIMOX (Separation by Plasma IMplantation of OXygen) and bonded SOL. In SPIMOX fabrication, both oxygen and water plasmas have been attempted and the results indicate that a discrete buried oxide layer can indeed be formed. In the case of wafer bonding, PIII is utilized for smart-cutting, a process in which implanted hydrogen or helium causes the bonded wafer to crack along the plane thereby making one side of the wafer recyclable. This article reviews the work done and current status of SOI fabrication by PIII.

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Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118370 ◽

1985 ◽

Vol 43 ◽

pp. 300-301

Author(s):

N. Lewis ◽

E. L. Hall ◽

A. Mogro-Campero ◽

R. P. Love

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Single Crystal Silicon ◽

Silicon Layer ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Dose ◽

Crystal Silicon ◽

Oxygen Ion ◽

Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176010 ◽

1990 ◽

Vol 48 (4) ◽

pp. 576-577

Author(s):

A. De Veirman ◽

J. Van Landuyt ◽

K.J. Reeson ◽

R. Gwilliam ◽

C. Jeynes ◽

...

Keyword(s):

Ion Implantation ◽

Annealing Treatment ◽

Silicon On Insulator ◽

High Dose ◽

Nitrogen Flow ◽

Cobalt Disilicide ◽

Transmission Electron ◽

Beam Heating ◽

Co Concentration ◽

Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

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ALMAR 300 ALLOY

Alloy Digest ◽

10.31399/asm.ad.sa0349 ◽

1978 ◽

Vol 27 (7) ◽

Keyword(s):

Corrosion Resistance ◽

Elevated Temperature ◽

Cold Working ◽

High Strength ◽

Heat Treating ◽

Age Hardening ◽

Ultra High Strength Steel ◽

Wide Range ◽

Iron Nickel ◽

Useful Yield

Abstract ALMAR 300 Alloy is a vacuum-melted ultra-high-strength steel. The annealed structure of this alloy is essentially a carbon-free, iron-nickel martensite (a relatively soft Rockwell C 28) that can be strengthened by cold working and elevated-temperature (900-950 F) age hardening to useful yield strengths as high as 300,000 psi. The unique properties of this alloy make it suitable for a wide range of section sizes. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: SA-349. Producer or source: Allegheny Ludlum Corporation.

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