Incorporation of Hydrogen and Oxygen into (t)a-C:H Thin Films Deposited using DECR plasma (*)

2001 ◽  
Vol 675 ◽  
Author(s):  
Fabrice Piazza ◽  
Dieter Grambole ◽  
Folker Herrmann ◽  
Gary Relihan ◽  
Marie France Barthe ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrogen Content ◽  
Electron Cyclotron Resonance ◽  
Plasma Reactor ◽  
Positron Annihilation Spectroscopy ◽  
Plasma Pressure ◽  
Nuclear Reaction Analysis ◽  
Hydrogen Incorporation ◽  
Si Substrates ◽  
Deposited Energy

ABSTRACTA distributed electron cyclotron resonance (DECR) plasma reactor powered by a microwave generator operating at 2.45 GHz (800 W) was used to deposit (t)a-C:H thin films at RT on <100> Si substrates RF biased within the range 25≤|V0|≤600 V.C2H2 was used as precursor. The plasma pressure was varied within the range 0.1≤P≤1.5 mtorr. The films were analysed using spectroscopic ellipsometry (SE) and Fourier transform infrared (FTIR) spectroscopy. The hydrogen content NH and the density of the films were determined from nuclear reaction analysis (NRA) using the resonance at 6.385 MeV of the reaction: 15N + 1H → 12C + 4He + γ. Positron annihilation spectroscopy was used to detect the porosity. The evolutions of NH as a function of the substrate ion current density n+ and as a function of V0 show that the hydrogen incorporation results from the competition between chemisorption and deposited energy density related effects. The increase of the hydrogen incorporation leads to a decrease in the film density and a lower deposition rate. The porosity of the films deposited at low pressure (∼0.1 mTorr) with V0= −80 V has been detected. The comparison between results of SRIM-2000 simulations and the evolution of NH as a function of V0 shows that the porosity and the hydrogen content are not correlated. The absorption of oxygen and nitrogen for the low density films has been detected from the observation of the 3250–4000 cm-1infra-red (IR) band.

Nano-Structured Amorphous Carbon Films Synthesised Using Decr Plasma

2001 ◽  
Vol 675 ◽  
Author(s):  
André Golanski ◽  
Dieter Grambole ◽  
Jean Hommet ◽  
Folker Herrmann ◽  
Philippe Kern ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Plasma Reactor ◽  
Argon Plasma ◽  
Carbon Films ◽  
Plasma Pressure ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Si Substrates ◽  
Detection Analysis

ABSTRACTA Distributed Electron Cyclotron Resonance plasma reactor powered by a microwave generator operating at 2.45 GHz was used to deposit ta-C:H (Diamond-Like Carbon, DLC) thin films at RT. A graphite sputtering target immersed in an argon plasma was used as carbon source. The Ar plasma density was about 5×1010 cm-3. Single crystal <100> Si substrates were RF biased to a negative voltage of -80 V. Atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), nuclear reaction analysis (NRA) using the resonance at 6.385 MeV of the reaction: 15N + 1H-→ 12C + 4He + γ, elastic recoil detection analysis (ERDA) and Rutherford backscattering (RBS) were used to investigate the early phase of the growth. The morphology of the films grown at low pressure (0.3 mTorr) is shown to be dominated by stress-mediated nucleation leading to formation of basket-like clusters of circular hillocks 20 nm high surrounded by a planar, mostly sp2 bonded film ∼8 nm thick. With increasing plasma pressure the spatial frequency of the hillocks becomes random and the growth is dominated by the Stranski-Krastanov mode. The XPS data taken at decreasing emergence angles show that the structure of the hillocks is dominated by sp3 bonded carbon. The XPS argon signal disappears at 10° emergence angle indicating that integration of argon occurs mainly within the sp bonded regions. The NRA and ERDA analysis show that the amount of integrated hydrogen decreases with increasing substrate current density. RBS data indicate that increasing bias enhances argon integration.

Preparation of pzt thin films on Pt/Ti/SiO2 and Pt/SiO2 Substrates by ECR Plasma Enhanced DC Magnetron Multi-target Reactive Sputtering

1996 ◽  
Vol 441 ◽  
Author(s):  
Sung-Tae Kim ◽  
Hyun-Ho Kim ◽  
Moon-Yong Lee ◽  
Won-Jong Lee
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Electron Cyclotron Resonance ◽  
Perovskite Phase ◽  
Early Stage ◽  
Reactive Sputtering ◽  
Deposition Process ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Ecr Plasma

AbstractPerovskite-phase lead zirconate titanate (PZT) thin films were fabricated at 4751C by the electron cyclotron resonance (ECR) plasma enhanced DC magnetron multi-target reactive sputtering method on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates. Stoichiometric perovskite PZT films were readily obtained on Pt/Ti/SiO2/Si substrates because Ti atoms which were out-diffused to the Pt surface facilitated Pb incorporation by forming lead titanate at the early stage of deposition process. Activation of oxygen by ECR plasma facilitated the oxidation reaction and Pb incorporation into the film. Thus perovskite-phase PZT can be obtained on the Pt/SiO2/Si substrate.

Structure and Magnetic Properties of Fe-N Thin Films Grown by ECR Deposition

1999 ◽  
Vol 562 ◽  
Author(s):  
Š émeth ◽  
H. Akinaga ◽  
H. Boeve ◽  
H. Bender ◽  
J. de Boeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
High Vacuum ◽  
Plasma Source ◽  
Columnar Structure ◽  
Ultra High Vacuum ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe growth of FexNy thin films on GaAs, In0.2Ga0.8As, and SiO2/Si substrates using an ultra high-vacuum (UHV) deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma source is presented. The structural properties of the deposited films have been measured using various techniques as x-ray diffraction (XRD), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The results of XRD measurements show that the films consist of a combination of α-Fe, α'-Fe, y-Fe4N, and α”- Fe16N2 phases. The depth profiles, calculated from the Auger peak intensities, show a uniform nitrogen concentration through the films. The TEM reveals a columnar structure of these films. The properties of the different Fe-N layers have been exploited in the fabrication of Fe(N) / FexNy / Fe trilayer structures, where Fe(N) means a slightly nitrogen doped Fe film. The magneto-transport properties of this trilayer structure grown on In0.2Ga0.8As substrates are presented.

Characterization of PbTiO3 thin films deposited on Pt/Ti/SiO2/Si substrates by ECR PECVD

1995 ◽  
Vol 10 (2) ◽  
pp. 447-452 ◽  
Author(s):  
Sung-Woong Chung ◽  
Jung-Shik Shin ◽  
Jae-Whan Kim ◽  
Kwangsoo No ◽  
Sung-Soon Chun ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Process Temperature ◽  
Chemical Compositions ◽  
Si Substrates ◽  
Fine Grain ◽  
Wide Range ◽  
Metal Organic ◽  
Surface Morphologies

The electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method is used to prepare ferroelectric PbTiO3 films. Single-phase perovskite PbTiO3 films with smooth surfaces and fine grain size were successfully fabricated on Pt/Ti/SiO2/Si substrates at low temperatures of 400–500 °C using metal-organic (MO) sources. The chemical compositions, structural phases, surface morphologies, and depth profiles of the PbTiO3 thin films were investigated using EDS, XRD, SEM, RBS, and AES. Variations of those properties with process temperature and gas supply ratio are discussed. When the process temperature was above 450 °C, the stoichiometric perovskite PbTiO3 films could be obtained even though the MO source supply ratio was varied in a wide range if the oxygen supply was sufficient.

Structure And Magnetic Properties Of Fe-N Thin Films Grown By Ecr Deposition

1999 ◽  
Vol 577 ◽  
Author(s):  
S. Németh ◽  
H. Akinaga ◽  
H. Boeve ◽  
H. Bender ◽  
J. De Boeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
High Vacuum ◽  
Plasma Source ◽  
Columnar Structure ◽  
Ultra High Vacuum ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe growth of FexNy thin films on GaAs, In0.2Ga0.8As, and Si02/Si substrates using an ultra high-vacuum (UHV) deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma source is presented. The structural properties of the deposited films have been measured using various techniques as x-ray diffraction (XRD), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The results of XRD measurements show that the films consist of a combination of α-Fe, α'-Fe, γ-Fe4N, and α”- Fe16N2 phases. The depth profiles, calculated from the Auger peak intensities, show a uniform nitrogen concentration through the films. The TEM reveals a columnar structure of these films. The properties of the different Fe-N layers have been exploited in the fabrication of Fe(N) / FexNy / Fe trilayer structures, where Fe(N) means a slightly nitrogen doped Fe film. The magneto-transport properties of this trilayer structure grown on In0.2Ga0.8As substrates are presented.

Characterization of a-C:H Thin Films Deposited from C2H4 by PECVD Microwave Discharge

2009 ◽  
Vol 609 ◽  
pp. 49-52 ◽  
Author(s):  
M. Kihel ◽  
R. Clergeraux ◽  
Salah Sahli ◽  
D. Escaich ◽  
Y. Segui ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Hydrogen Concentration ◽  
Electron Cyclotron Resonance ◽  
Structural Characteristics ◽  
Plasma Reactor ◽  
Chemical Properties ◽  
Film Structure ◽  
Plasma Power ◽  
Film Density

Some investigations on physico-chemical properties of hydrogenated amorphous carbon (a-C:H) thin films deposited from C2H4 precursor have been carried out. The films were elaborated in a Microwave Multipolar Plasma reactor excited at Distributed Electron Cyclotron Resonance (MMP-DECR). The effects of the plasma power on the electrical and structural characteristics of the deposited films have been evaluated. It appeared that for low plasma power ( 400 W), the deposition rate and the hydrogen concentration increases, whereas the Csp2 concentration remains constant. Beyond 400 W, the deposition rate and the hydrogen concentration reach saturation levels and the Csp2 concentration decreases. In contrast, the film density decreased with the increase of the plasma power. Below 400 W, the dielectric constant decreased with the increase of the plasma power, however, beyond 400 W its value remained almost constant. The correlation between film characterization and properties shows that the permittivity is driven by the film density and the film structure.

Investigation on Thin Films Deposited by PECVD from a DiPhenylMethylSilane (DPMS) Vapors or Mixed with Oxygen for Low-K Material Application

2011 ◽  
Vol 227 ◽  
pp. 35-38
Author(s):  
Leila Bouledjnib ◽  
Salah Sahli ◽  
Azziz Zenasni ◽  
Patrice Raynaud ◽  
Yvan Segui
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electron Cyclotron Resonance ◽  
Plasma Reactor ◽  
Plasma Discharge ◽  
Plasma Discharges ◽  
Film Properties ◽  
New Class ◽  
Current Voltage ◽  
Low K

A new class of low-k materials thin films, deposited from a DiPhenyleMethylSilane (DPMS) vapors was prepared using PECVD technique. These films are elaborated in microwave excited DECR plasma reactor (Distributed Electron Cyclotron Resonance) from pure DiPhenylMethylSilane (DPMS) using various plasma discharge power (100-400 W) or mixed with 50% of oxygen (O2).The improvements of film properties were investigated by capacitance–frequency (C–f), current–voltage (I–V) techniques and Fourier transform infrared spectroscopy (FTIR). The obtained results show that an increase in plasma discharges power from 100 to 400 watts leads to the decrease in dielectric constant value from 4.4 to 3.7 (measured at 10 kHz). The incorporation of oxygen improves the dielectric properties of the films; the dielectric constant value was reduced to 2.9.

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