Determination of the Modulus and Hardness of Spin-on Zeolite Low-K Thin Films

2005 ◽  
Vol 880 ◽  
Author(s):  
Mark Johnson ◽  
Zijian Li ◽  
Yushan Yan ◽  
Junlan Wang
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Material Selection ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Depth Sensing ◽  
New Class ◽  
Low Dielectric ◽  
Pure Silica ◽  
Low K

AbstractWith the semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant (low-k) materials to replace traditional dense SiO2 based insulators. In order to survive the multi-step integration process and provide reliable material and structure for the desired integrated circuit (IC) functions, the new low-k materials have to be mechanically strong and stable. Thus the material selection and mechanical characterization are vital in the successful development of next generation low-k dielectrics. A new class of low-k dielectric materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus measurements of the zeolite thin films are found to be significantly higher than that of other porous silicates with similar porosity and dielectric constants. Correlations of the mechanical, microstructural and electrical properties are discussed in detail.

Electrical, Mechanical, and Structural Properties of Fluoro-Containing Poly(silsesquioxanes) Based Porous Low k Thin Films

2003 ◽  
Vol 766 ◽  
Author(s):  
Jingyu Hyeon-Lee ◽  
Jihoon Rhee ◽  
Jungbae Kim ◽  
Jin-Heong Yim ◽  
Seok Chang
Keyword(s):  
Thin Films ◽  
Pore Size ◽  
Dielectric Constants ◽  
Commercial Application ◽  
Porous Films ◽  
Low Dielectric ◽  
Nanoporous Films ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy ◽  
Low K

AbstractLow dielectric fluoro-containing poly(silsesquioxanes) (PSSQs) have been synthesized using trifluoropropyl trimethoxysilane (TFPTMS), methyl trimethoxysilane (MTMS), and 2, 4, 6, 8-tetramethyl-2, 4, 6, 8-tetra(trimethoxysilylethyl) cyclotetrasiloxane. The properties of fluorocontaining PSSQs based thin films were studied by electrical, mechanical, and structural characterization. Film was spun on a silicon substrate, baked at 150°C and 250°C for 1 minute, respectively, and cured in the furnace at 420°C for 1 hour under vacuum condition. Thermally decomposable trifluoropropyl groups of the fluoro-containing PSSQ were served as a pore generator and partially contributed to lower a dielectric constant. â-cyclodextrin (CD) was also employed as a pore generator. The concentration of the pore generator in the film was varied from 0 to 30 %. The dielectric constants of the porous PSSQ films were found to be in the range of 2.7 – 1.9 (at 100 kHz). Hardness and Young's modulus of the films were measured by nano-indentation. The elastic modulus and hardness of the porous films were well correlated with the concentration of the pore generators. Positronium Annihilation Lifetime Spectroscopy (PALS) was employed to characterize a pore size of the porous fluoro-containing PSSQ film. The pore size of the film was less than 2.2 nm. The nanoporous films showed quite promising properties for commercial application.

Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

2015 ◽  
Vol 1791 ◽  
pp. 15-20 ◽  
Author(s):  
Karina B. Klepper ◽  
Ville Miikkulainen ◽  
Ola Nilsen ◽  
Helmer Fjellvåg ◽  
Ming Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Carboxylic Acids ◽  
Material Properties ◽  
Atomic Layer ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Leakage Currents ◽  
Low Dielectric ◽  
Low K ◽  
Trimethyl Aluminum

ABSTRACTThe material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

Process Integration issues for Interlevel Dielectric Materials for Sub-quarter Micron Silicon Integrated Circuits

1998 ◽  
Vol 511 ◽  
Author(s):  
Vijay Parihar ◽  
R. Singh
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Process Integration ◽  
Dielectric Materials ◽  
New Approach ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Silicon Integrated Circuits ◽  
Processing Techniques ◽  
Low K

ABSTRACTThe continued miniaturization towards sub-quarter micron feature size mandates the search for low dielectric constant interlayer dielectric materials. A large number of materials and processing techniques has been suggested, but so far none of the proposed dielectric materials as well as processing techniques have been integrated into standard integrated circuit processing. In this paper, a new approach has been formulated for integration of low-k dielectric materials for future integrated circuits.

Electrical/Mechanical Properties of Porous Low-k Thin Films by Using Various Supramolecule Based Porogen

2007 ◽  
Vol 124-126 ◽  
pp. 185-188
Author(s):  
Jin Heong Yim ◽  
Young Kwon Park ◽  
Jong Ki Jeon
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Electrical Properties ◽  
Pore Diameter ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Mechanical And Electrical Properties ◽  
Low K ◽  
Deposited Films

The porous SSQ (silsesquioxane) films were prepared by using alkoxy silyl substituted cyclodextrin (sCD) and methyl substituted cyclodextrin (tCD) based porogen. The mechanical and electrical properties of these deposited films were investigated for the applications as low dielectric materials. The mechanical properties of porous film by using sCD are worse than those by using tCD due to its high pore interconnection length. sCD templated porous films show almost constant pore diameter as a function of porogen concentration due to strong linear polymerization of the sCD molecules through polycondensation.

Recent Advances in Low K Polymeric Materials

1997 ◽  
Vol 476 ◽  
Author(s):  
K. R. Carter
Keyword(s):  
Integrated Circuit ◽  
Polymeric Materials ◽  
Turn Of The Century ◽  
Dielectric Constants ◽  
Limiting Factor ◽  
Microelectronic Device ◽  
Low Dielectric ◽  
Fluorinated Polyimides ◽  
Low Dielectric Constant Materials ◽  
Low K

AbstractAs microelectronic device dimensions decrease and functionality density increases, a change in interconnect materials, both conductors and insulators must change from currently used materials. To this end, we are actively in search of low dielectric constant materials that can be integrated into integrated circuit production. The greatest limiting factor in materials qualification are the stringent IC processing conditions (thermal stability, resistance to chemical/mechanical treatments). Current specifications for back-end-of-the-line (BEOL) thin film insulators call for materials with dielectric constants of 3.0–3.5 and turn of the century CMOS devices may require materials with dielectric constants approaching 2.0. While there are a number of possible candidates for current uses, the list of usable materials with dielectric constants <3.0 is very limited. Future low K candidates being examined include fluorinated polyimides and porous materials.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Thermal conductivity study of porous low K dielectric materials

1999 ◽  
Vol 565 ◽  
Author(s):  
Chuan Hu ◽  
Michael Morgen ◽  
Paul S. Ho ◽  
Anurag Jain ◽  
William. N. Gill ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Omega Method ◽  
3 Omega ◽  
Low Dielectric Constant Materials ◽  
Low K ◽  
Method Analysis

AbstractA quantitative characterization of the thermal properties is required to assess the thermal performance of low dielectric constant materials. Recently we have developed a technique based on the 3-omega method for measuring the thermal conductivity of porous dielectric thin films. In this paper we present the results on the measurements of thermal conductivity of thin porous films using this method. A finite element method analysis is used to evaluate the approximations used in the measurement. Two porosity-weighted thermal resistor models are proposed to interpret the results. By studying the dependence of the thermal conductivity on porosity, we are able to discuss the scaling rule of thermal conductivity. Additionally, a steady state layered heater model is used for evaluating the significance of introducing porous ILDs into an interconnect structure.

Subcritical Delamination of Dielectric and Metal Films from Low-k Organosilicate Glass (OSG) Thin Films in Buffered pH Solutions

2003 ◽  
Vol 795 ◽  
Author(s):  
Y. Lin ◽  
J. J. Vlassak ◽  
T. Y. Tsui ◽  
A. J. McKerrow
Keyword(s):  
Thin Films ◽  
Ph Value ◽  
Dielectric Materials ◽  
Barrier Films ◽  
Interface Delamination ◽  
Organosilicate Glass ◽  
Controlled Fracture ◽  
Ph Buffer ◽  
Subcritical Fracture ◽  
Low K

ABSTRACTUnderstanding subcritical fracture of low-k dielectric materials and barrier thin films in buffered solutions of different pH value is of both technical and scientific importance. Subcritical delamination of dielectric and metal barrier films from low-k organosilicate glass (OSG) films in pH buffer solutions was studied in this work. Crack path and subcritical fracture behavior of OSG depends on the choice of barrier layers. For the OSG/TaN system, fracture takes place in the OSG layer near the interface, while in OSG/SiNx system, delamination occurs at the interface. Delamination behavior of both systems is well described by a hyperbolic sine model that had been developed previously based on a chemical reaction controlled fracture process at the crack tip. The threshold toughness of both systems decreases linearly with increasing pH value. The slopes of the reaction-controlled regime of the crack velocity curves for both systems are independent of pH as predicted by the model. Near transport-controlled regime behavior was observed in OSG/TaN system.

New Carbon-bridged Hybrid Polymers for Low-k Materials

2005 ◽  
Vol 863 ◽  
Author(s):  
Bum-Gyu Choi ◽  
Byung Ro Kim ◽  
Myung-Sun Moon ◽  
Jung-Won Kang ◽  
Min-Jin Ko
Keyword(s):  
Mechanical Properties ◽  
Hybrid Materials ◽  
Chemical Mechanical Planarization ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Metal Line ◽  
Inorganic Hybrid ◽  
Low Dielectric ◽  
Continuous Stiffness Measurement ◽  
Low K

AbstractReducing interline capacitance and line resistance is required to minimize RC delays, reduce power consumption and crosstalk below 100nm node technology. For this purpose, various inorganic- and organic polymers have been tested to reduce dielectric constants in parallel with the use of copper as metal line. Lowering the dielectric constants, in particular, causes the detrimental effect on mechanical properties, and then leads to film damage and/or delamination during chemical-mechanical planarization CMP) or repeated thermal cure cycles. To overcome this issue, new carbon-bridged hybrid materials synthesized by organometallic silane precursors and sol-gel reaction are proposed.In this work, we have developed new organic-inorganic hybrid low-k dielectrics with linear or cyclic carbon bridged structures. The differently bridged carbon structures were formed by a controlled reaction. 1H NMR, 29Si NMR analysis and GC/MSD analysis were conducted for the structural characterization of new hybrid low-k dielectric. The mechanical and dielectric properties of these hybrid materials were characterized by using nanoindentation with continuous stiffness measurement and Al dot MIS techniques. The results indicated that these organic-inorganic hybrid materials were very promising polymers for low-k dielectrics that had low dielectric constants with high thermal and mechanical properties. It has been also demonstrated that electrical and mechanical properties of the hybrid films could be tailored by copolymerization with PMSSQ and through the introduction of porogen.

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