RF Magnetron Sputtering Process for (Ba,Sr)TiO3 Thin Films with Higher Dielectric Constant

2003 ◽  
Vol 784 ◽  
Author(s):  
T. Jimbo ◽  
I. Kimura ◽  
Y. Nishioka ◽  
K. Suu
Keyword(s):  
Dielectric Constant ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Deposition Temperature ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Film Properties ◽  
Sintered Ceramic ◽  
Bst Films

ABSTRACT(Ba,Sr)TiO3 (BST) films were deposited by RF magnetron sputtering using BST sintered ceramic targets and an approach to deposit BST films with higher permittivity by sputtering deposition was explored aiming to the application of thin film capacitor, RF tunable components and so on.Basic sputtering conditions such as RF power, deposition temperature and so on were varied in this study. BST films and Pt/BST/Pt capacitors were investigated by electrical properties, XRD analysis and SEM observation. It became clear that deposition temperature, deposition rate, and BST film thickness were important parameters for optimization of the dielectric constant. From the non-linearly relationship between dielectric constant and BST film thickness, we could also find that the interfacial layer between BST and Pt bottom electrode was important for controlling the BST film properties. Furthermore, an approach to enhance the crystalline quality has to be explored for further improvement of BST film properties. Dielectric constant could be raised up to 10% by just changing the gas flow sequence of BST sputtering process.

Thickness Dependence of Induced Ferroelectricity in Epitaxially Grown Ba0.44Sr0.56TiO3 Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Kazuhide Abe ◽  
Shuichi Komatsu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Lattice Constant ◽  
Rf Magnetron Sputtering ◽  
Thickness Dependence ◽  
Thickness Direction ◽  
Deposition Technique ◽  
Bst Films

ABSTRACTBa0.44Sr0.56TiO3 (BST) thin films with various thicknesses were epitaxially grown on Pt/MgO(100) substrates with rf magnetron sputtering. The thickness dependence of lattice constant, D-E hysteresis and dielectric constant were evaluated for the BST films. The lattice constant in the thickness direction is elongated through the thickness range (33 to 221 nm), whereas the ferroelectric and the dielectric properties had strong thickness dependencies. The mechanism of the induced ferroelectricity is discussed in terms of the thickness dependence and deposition technique.

GROWTH CHARACTERISTIC OF GZO FILM FABRICATED BY RF MAGNETRON SPUTTERING

2015 ◽  
Vol 75 (7) ◽  
Author(s):  
Farah Lyana Shain ◽  
Azmizam Manie @ Mani ◽  
Lam Mui Li ◽  
Saafie Salleh ◽  
Afishah Alias ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Characteristic ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Rf Power ◽  
Argon Flow ◽  
Sputtering Power

This paper investigate the dependence of film thickness onto characteristic of Gallium doped Zinc Oxide (GZO). GZO films were deposited on a glass substrate by RF Magnetron Sputtering using GZO ceramic target with 99.99% purity. Thicknesses were altered by varying the deposition time from 10 min to 50 min meanwhile the sputtering power, argon flow and target distance were fixed in order to investigate the influence of film thickness to the growth characteristic, structural, optical properties and surface morphology of the films. Sputtering was performed with RF power of 100 watt and the argon flow was set at 10 sccm. GZO thin films on various thicknesses range from 130 nm to 460 nm were successfully deposited onto glass substrate with the crystallite grain size in range of 20.63 nm to 22.04 nm with the optical transmittance above 85 %. 

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Microcrystalline Silicon Films Produced by RF Magnetron Sputtering and the Effect of Diffrent Ambients on their Conductivity

1989 ◽  
Vol 164 ◽  
Author(s):  
Ratnabali Berjee ◽  
A. K. Bandyopadhyay ◽  
S. N. Sharma ◽  
A. K. Patabyal ◽  
A.K. Barua
Keyword(s):  
Magnetron Sputtering ◽  
Power Density ◽  
Rf Magnetron Sputtering ◽  
Silicon Films ◽  
Critical Parameters ◽  
Rf Power ◽  
Microcrystalline Silicon ◽  
Film Properties

AbstractResults on characterisation of undoped, μc-Si:H films prepared by rf magnetron sputtering technique are presented. Highly conducting films (10−3 Δ−cm−1) were obtained at fairly low rf power density (l.2W/cm2). Critical parameters for obtaining microcrystalline phase were identified. The effect of humid ambient on film properties was looked into.

Effect of Temperature on the Optical and Morphological Properties of Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1115 ◽  
pp. 422-425
Author(s):  
Souad A.M. Al-Bat’hi ◽  
Maizatulnisa Othman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Zno Thin Films ◽  
Effect Of Temperature

This investigation deals with the effect of temperature on the optical and morphological properties of Zinc Oxide thin films prepared by radio-Frequency (RF) magnetron sputtering technique. In the present work, zinc oxide (ZnO) thin films have been deposited on glass substrates from 50°C to 300°C by radio frequency magnetron sputtering. The effects of deposition temperature on the crystallization behaviour and optical properties of the films have been studied. The thin films were characterized using Ultraviolet Visible Spectroscopy (UV-VIS), Field Emission Scanning Electron Microscopy (FESEM) and X-ray Diffraction Analysis (XRD). From the UV-VIS testing, the average transmission percentage of the films is between 80-95% for all deposition temperatures meanwhile the energy gap of ZnO thin films varies from 3.26 eV to 3.35 eV which is not much different from the theoretical value. Also, the grain size is getting smaller from 3.886nm, 3.216nm, 3.119nm and 3.079nm with respect to the increasing deposition temperature 50°C, 100°C, 200°C and 300°C respectively whereas the average grain size per intercept value is increasing. The patterns of the peak were about the same for all deposition temperature where the thin films have polycrystalline hexagonal wurtzite structure with the orientation perpendicular (002) to the substrate surface (c-axis orientation) at 34.5(2θ).

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