Next Generation of Thin Film Transistors Based on Zinc Oxide

2004 ◽  
Vol 811 ◽  
Author(s):  
E. Fortunato ◽  
P. Barquinha ◽  
A. Pimentel ◽  
A. Gonçalves ◽  
L. Pereira ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Field Effect ◽  
High Performance ◽  
Room Temperature ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Optoelectronic Device ◽  
Field Effect Mobility ◽  
Next Generation

ABSTRACTWe report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm2/Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

High performance thin film transistor with HfSiO x dielectric fabricated at room temperature RF-magnetron sputtering

2013 ◽  
Vol 9 (4) ◽  
pp. 381-384 ◽  
Author(s):  
Dongkyu Cho ◽  
Sanghyun Woo ◽  
Jungil Yang ◽  
Donghee Lee ◽  
Yoosung Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering

Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

MRS Advances ◽  
2018 ◽  
Vol 3 (27) ◽  
pp. 1525-1533 ◽  
Author(s):  
Eleonora Macchia ◽  
Alla Zak ◽  
Rosaria Anna Picca ◽  
Kyriaki Manoli ◽  
Cinzia Di Franco ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Fold Increase ◽  
Field Effect Mobility ◽  
Figures Of Merit ◽  
Electronic Channel ◽  
Improved Performance ◽  
P Type

ABSTRACTThis work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2 nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.

Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization

2001 ◽  
Vol 685 ◽  
Author(s):  
Barry D. van Dijk ◽  
Paul Ch. Van der Wilt ◽  
G. J. Bertens ◽  
Lis.K. Nanver ◽  
Ryoichi Ishihara
Keyword(s):  
Thin Film ◽  
Chemical Mechanical Polishing ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Subthreshold Swing ◽  
Filter Method ◽  
Field Effect Mobility ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Grain Filters

AbstractThin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

1994 ◽  
Vol 336 ◽  
Author(s):  
Y. Chida ◽  
M. Kondo ◽  
G. Ganguly ◽  
A. Matsuda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
High Mobility ◽  
High Electron ◽  
Field Effect Mobility ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Deposition Conditions

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

Fe-42%Ni austenitic alloy as a novel substrate for flexible electronics

2011 ◽  
Vol 1285 ◽  
Author(s):  
Xiaoxiao Ma ◽  
Shahrukh A. Khan ◽  
Nackbong Choi ◽  
Miltiadis Hatalis ◽  
Mark Robinson
Keyword(s):  
Flexible Electronics ◽  
Field Effect ◽  
High Performance ◽  
Flexible Substrate ◽  
Good Choice ◽  
Annealing Process ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Bottom Gate ◽  
Igzo Tft

ABSTRACTWe report Fe-42%Ni as a novel high-performance substrate for a-IGZO TFT fabrication after evaluating 8 different metals for chemical compatibility, mechanical flexing and dimensional stability. Excellent flexibility and rollability indicates that Fe-42%Ni would be a good choice as flexible substrate for R2R process. Pre-annealing process for stabilizing the substrate is studied and applied to the Fe-42%Ni foil before TFT fabrication. Staggered bottom gate a-IGZO TFTs which were fabricated on this substrate have field effect mobility of 12 cm2/V.s, threshold voltage of 2V, sub-threshold swing of 0.6V/decade and on/off current ratio exceeding 107.

Sign in / Sign up

Export Citation Format

Share Document