Comparison of the Growth Kinetics of Oxides Grown in Tungsten-Halogen and Water Cooled Arc Lamp Systems

1987 ◽  
Vol 92 ◽  
Author(s):  
C.A. Paz de Araujo ◽  
J.C. Gelpey ◽  
Y.P. Huang ◽  
R. Kwor
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Growth Kinetics ◽  
Dwell Time ◽  
Growth Conditions ◽  
Ambient Conditions ◽  
Wafer Temperature ◽  
System Bias ◽  
Lamp System ◽  
Kinetics Of

ABSTRACTRapid thermal oxidation of silicon has been performed in a tungsten-halogen system (AG-410) and a water-wall arc lamp system (Eaton ROA-400). Growth kinetics of the oxides are studied with particular attention to ramp-up ambient conditions, dwell time, maximum wafer temperature and difference in activation energies. These parameters are characterized using ellipsometry in order to measure system bias with respect to growth rate and breakdown. Experiments were designed to identify the differences in the initial enhanced growth conditions, and their effect on growth kinetics during the dwell cycle.

Growth Kinetics and Formation of Uniform Self-Assembled InAs/GaAs Quantum Dots at

2007 ◽  
Vol 124-126 ◽  
pp. 539-542
Author(s):  
Eui Tae Kim ◽  
Anupam Madhukar
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Growth Kinetics ◽  
Slow Growth ◽  
Fast Growth ◽  
Slow Growth Rate ◽  
Self Assembled ◽  
Kinetics Of ◽  
Fast Growth Rate ◽  
2D To 3D

We discuss the growth kinetics of InAs/GaAs self-assembled quantum dots (QDs) using two different InAs deposition rates, relatively fast growth rate of 0.22 ML/sec and slow growth rate of 0.054 ML/sec. With increasing InAs deposition amount to 3.0 ML, the QD density was almost constant after 2D to 3D island transition at the slow deposition rate while the QD density kept increasing and the QD size distribution was relatively broad at the fast growth rate. After the 2D to 3D transition, at the slow growth rate, further deposited In adatoms seemed to incorporate primarily into already formed islands, and thus contribute to equalize island size. The photoluminescence (PL) full-width at half maximum (FWHM) of 2.5 ML InAs QDs at 0.054 ML/sec was 23 meV at 78K. The PL characteristics of InAs/GaAs QDs were degraded significantly after thermal annealing at 550 oC for 3 hours.

Growth Kinetics Of SiO2 On (001)Si Catalyzed By Cu3Si At Elevated Temperatures

1999 ◽  
Vol 564 ◽  
Author(s):  
H. Y. Huang ◽  
L. J. Chen
Keyword(s):  
Growth Rate ◽  
Growth Kinetics ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Linear Growth ◽  
Elevated Temperatures ◽  
The Other ◽  
Wet Oxidation ◽  
Transmission Electron ◽  
Kinetics Of

AbstractThe oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the growth rate of the oxide layer was increased with the temperature. On the other hand, as the temperature was increased above 200 °C, the growth rate slowed down. The growth kinetics of oxide was investigated. Controlling mechanisms for the growth of oxide owing to the grain growth of Cu3Si are discussed. The activation energy for the linear growth of oxide was measured to be 0. 19 ± 0.1 eV.

Growth Kinetics of Ultrathin Silicon Dioxide Films Formed by Rapid Thermal Oxidation

1995 ◽  
Author(s):  
Hisashi FUKUDA ◽  
Katsunori AKASE ◽  
Toshiaki ENDOH ◽  
Shigeru NOMURA
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Growth Kinetics ◽  
Rapid Thermal Oxidation ◽  
Silicon Dioxide Films ◽  
Kinetics Of

Controlling the Microstructure of the 2223 Phase Grains for the Fabrication of Silver Clad (Bi,Pb)2Sr2Ca2Cu3Ox Tapes Through the Growth Kinetics of the Superconducting Phases

1992 ◽  
Vol 275 ◽  
Author(s):  
Wai Lo ◽  
B. A. Glowacki
Keyword(s):  
Growth Rate ◽  
Grain Size ◽  
Liquid Phase ◽  
Bulk Density ◽  
Growth Kinetics ◽  
Major Phase ◽  
Average Grain Size ◽  
The Relationship ◽  
Kinetics Of ◽  
Fast Growth Rate

ABSTRACTOur study concentrated on the relationship between the proportions of the phases in the precursors used to synthesise the Bi-2223 phase and the ultimate microstructures of the 2223 phase materials, although the overall cation stoichiometry fixed. It was found that the final 2223 phase grains were larger, although the bulk density tended to be lower with the grains loosely packed together, when the major phase in the precursor was 2212 phase. This was proved to be partly caused by the fast growth rate of the 2212 phase grains which were eventually converted into the 2223 phase. When 2223 phase was present in the precursor, the bulk density became higher and 2223 phase grains became closely packed together, although the average grain size became smaller. This was explained by the existence of a liquid phase at higher temperatures during the formation of the 2223 phase and the sintering of the 2223 phase grains.

Detection of SiH3 radicals and cluster formation in a highly H2 diluted SiH4 VHF plasma by means of time resolved cavity ring down spectroscopy

2006 ◽  
Vol 910 ◽  
Author(s):  
Takehiko Nagai ◽  
Arno H. M. Smets ◽  
Michio Kondo
Keyword(s):  
Growth Rate ◽  
Cluster Formation ◽  
Film Surface ◽  
Growth Conditions ◽  
Time Resolved ◽  
Cavity Ringdown ◽  
Plasma Ignition ◽  
Diffusion Controlled ◽  
Kinetics Of ◽  
Main Growth

AbstractThe spatial distribution of the SiH3 radicals between the electrodes of a hydrogen diluted silane VHF plasma under thin film hydrogenated microcrystalline silicon (μc-Si:H) growth conditions has been measured using the time resolved cavity ringdown (τ-CRD) absorption spectroscopy technique. The μc-Si:H growth rate is estimated from the measured spatial SiH3 profiles using a simple model based upon diffusion controlled flux of SiH3 radicals to the electrode surface, where the SiH3 can react with the film surface. The calculated value of μc-Si:H growth rate roughly agrees with the value of the experimentally determined growth rate. This agreement implies that the SiH3 radical is the main growth contributor to the μc-Si:H growth. Furthermore, the τ-CRD reveals the growth kinetics of the clusters in the plasma by light scattering at these clusters on time scales of 1 s after the plasma ignition.

Methodical approach for studying kinetics of short and long fatigue cracks growth for irradiated reactor materials. Part 1. Statement of problem. The effect of the initial notch acuity on the fatigue crack rate on small-sized specimens

2019 ◽  
pp. 191-204 ◽  
Author(s):  
V. I. Smirnov ◽  
A. J. Minkin ◽  
B. Z. Margolin ◽  
V. I. Kokhonov
Keyword(s):  
Growth Rate ◽  
Fatigue Crack ◽  
Crack Growth ◽  
Growth Kinetics ◽  
Fatigue Cracks ◽  
Stress Concentration Zone ◽  
Concentration Zone ◽  
Methodical Approach ◽  
Reactor Materials ◽  
Kinetics Of

The paper considers methodical issues in the experimental research of fatigue crack growth kinetics when testing irradiated small-sized specimens. The effect of the initial notch acuity is studied on the long crack growth rate. The stress concentration zone sizes are estimated for notches of various types. A brif literature review of the main problems in the study of the growth kinetics of short fatigue cracks has been performed. The tasks of further research are formulated. 

Microstructure and Kinetic Analysis of the Initial Stages of SiC Formation in a Rapid Thermal Processor

1991 ◽  
Vol 224 ◽  
Author(s):  
Ki-Bum Kim ◽  
Jimmy C. Liao ◽  
Brad J. Burrow ◽  
Eileen A. Sullivan
Keyword(s):  
Growth Rate ◽  
High Resolution ◽  
Growth Kinetics ◽  
Kinetic Data ◽  
Carbon Layer ◽  
Cross Sectional ◽  
Si Substrates ◽  
Growth Modes ◽  
Reaction Proceeds ◽  
Kinetics Of

AbstractWe have investigated the evolution of the microstructure, growth modes, and growth kinetics of β-SiC in a rapid thermal processor using FTIR, ESCA, and TEM. SiC layers were formed by reacting C2H4 with Si substrates between 900 and 1300°C at 5 torr. We found that SiC forms discrete nuclei at 900°C, a mixture of discrete nuclei with a thin β-SiC layer in between those nuclei at around 1000°C, and a continuous β-SiC layer above 1100°C. In all cases, β-SiC grows epitaxially on Si substrates. In addition, we identified that a graphitic carbon layer is formed on top of a continuous β-SiC layer. The thickness of the SiC layer was deduced from the integrated absorption spectra of FTIR and measured from the high resolution cross-sectional TEM micrographs. Kinetic data indicate that SiC grows rapidly at the initial stages of reaction. The growth rate, however, is retarded significantly as the reaction proceeds.

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