scholarly journals Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
Y. Park ◽  
B.j. Kim ◽  
J. W. Lee ◽  
O. H. Nam ◽  
C. Sone ◽  
...  
Keyword(s):  
Laser Diode ◽  
Characteristic Temperature ◽  
Optical Power ◽  
Threshold Current ◽  
Transverse Magnetic ◽  
Threshold Current Density ◽  
Transverse Magnetic Mode ◽  
Sapphire Substrates ◽  
Multi Quantum Well ◽  
Electric Mode

InGaN/GaN multi-quantum well (MQW) laser diodes (LDs) were grown on c-plane sapphire substrates using a multi-wafer MOCVD system. The threshold current for pulsed lasing was 1.6 A for a gain-guided laser diode with a stripe of 10 × 800 μm2. The threshold current density was 20.3 kA cm−2 and the threshold voltage was 16.5 V. The optical power ratio of transverse electric mode to transverse magnetic mode was found to be greater than 50. The characteristic temperature measured from the plot of threshold current versus measurement temperature was between 130 and 150K.

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 3 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
A. Rybaltowski ◽  
Xiaolong Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multi Quantum Well ◽  
Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

Sb-Based Mid-Infrared Diode Lasers

2001 ◽  
Vol 692 ◽  
Author(s):  
C. Mermelstein ◽  
M. Rattunde ◽  
J. Schmitz ◽  
S. Simanowski ◽  
R. Kiefer ◽  
...  
Keyword(s):  
Current Density ◽  
Cavity Length ◽  
Diode Lasers ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Ridge Waveguide ◽  
Single Element ◽  
Type I ◽  
Waveguide Design

AbstractIn this paper we review recent progress achieved in our development of type-I GaInAsSb/AlGaAsSb quantum-well (QW) lasers with emission wavelength in the 1.74–2.34 μm range. Triple-QW (3-QW) and single-QW (SQW) diode lasers having broadened waveguide design emitting around 2.26 μm have been studied in particular. Comparing the two designs we have find that the threshold current density at infinite cavity length as well as the transparency current density scale with the number of QWs. Maximum cw operating temperature exceeding 50°C and 90°C has been obtained for ridge waveguide lasers emitting above and below 2 μm, respectively. Ridge waveguide diode lasers emitting at 1.94 μm exhibited internal quantum efficiencies in excess of 77%, internal losses of 6 cm−1, and threshold current density at infinite cavity length as low as 121 A/cm2 reflecting the superior quality of our diode lasers, all values recorded at 280 K. A high characteristic temperature TOof 179 K for the threshold current along with a value of T1 = 433 K for the characteristic temperature of the external efficiency have been attained for the 240–280 K temperature interval. Room temperature cw output powers exceeding 1.7 W have been demonstrated for broad area single element devices with highreflection/ antireflection coated mirror facets, mounted epi-side down. The latter result is a proof for the high power capabilities of these GaSb-based mid-ir diode lasers.

QUANTUM WELL LASERS AND THEIR APPLICATIONS

1996 ◽  
Vol 07 (03) ◽  
pp. 373-381
Author(s):  
LIANGHUI CHEN
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Mainland China ◽  
Optical Fiber Communication ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Material System ◽  
High Modulation ◽  
Low Threshold

Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The investigation on quantum well laser in mainland China started in the early 80s. AlGaAs/GaAs QW laser diode and InGaAs/GaAs strained layer QW laser diode have been developed using MBE technology with extremely low threshold current and high T0. Now the growth technologies for QW structure have been expanded to MOCVD technology. Emission wavelengths, on longer wavelength sides have been expanded up to 1.3 µm and 1.55 µm with InGaAsP/InP material system for application in optical fiber communication. On shorter wavelength sides, the emission wavelength has been expanded to lower than 670 nm, for applications in optical information processing. The characteristics of these devices will be demonstrated in this paper. The QW-DFB LD and low-dimension quantum wire and quantum dot lasers are under investigation.

scholarly journals Packing and Characterizing High- power Laser Diode

2016 ◽  
Vol 32 (3) ◽  
Author(s):  
Nguyen Tuan Anh ◽  
Didier Decoster ◽  
Au Thi Huong
Keyword(s):  
Laser Diode ◽  
High Power ◽  
Beam Quality ◽  
Optical Power ◽  
Threshold Current ◽  
Divergence Angle ◽  
High Power Laser ◽  
Single Chip ◽  
Power Laser ◽  
High Power Laser Diode

Abstract: In the manufacturing processes of high-power laser diode modules, the module packaging technologies play an important role; decide the efficiency of the electro-optical conversation, the beam quality and the lifetime. This paper presents the packaging of high-power laser diode modules from single chip, evaluating the electro-optical characteristics and the beam quality of the modules. The obtained results show that the packaged module has an output optical power of 5 W at current 5.9 A; the Operation Voltage is 1.7 V; the Threshold Current is 1,0 A;  the Divergence Angle Mean is 36.8 degree and the Asymmetry is 1.04. These parameters are almost the same that of some on-stock modules. Thus, the application of the packaged module in social – economics is possible. Keywords: Laser diode, fiber – coupled, die bond technology; wire bond technology; electro-optical conversation efficiency, PVI characteristics, beam quality, Divergence Angle, Asymmetry.

scholarly journals Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer

Nanophotonics ◽  
2020 ◽  
Vol 9 (3) ◽  
pp. 667-674
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Desheng Jiang ◽  
Wenjie Wang ◽  
Zongshun Liu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Optical Loss ◽  
Optical Power ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Device Performance ◽  
Nonradiative Recombination ◽  
Calculation Results ◽  
Performance Deterioration

AbstractThe effect of V-pits in the upper waveguide (UWG) on device performance of GaN-based laser diodes (LDs) has been studied. Experimental results demonstrate that in comparison with the LDs with u-In0.017Ga0.983N/u-GaN multiple UWG or u-In0.017Ga0.983N one, the LDs with a single u-GaN UWG has the best device performance. They have a smaller threshold current density, and a larger and more stable output optical power. The lowest threshold current density is as low as 1.3 kA/cm2, and the optical power reaches to 2.77 W. Furthermore, atomic force microscopy suggests that the deterioration of device performance of former kinds of devices may be attributed to the increase of V-pits’ size and quantity in the undoped-In0.017Ga0.983N UWG layer, and these V-pits could introduce more nonradiative recombination centers and exacerbate the inhomogeneity of injection current. Moreover, theoretical calculation results indicate that the increase of leakage current and optical loss are additional reasons for the device performance deterioration, which may be caused by a reduction of the potential barrier height for electrons in the quantum wells and by an increased background electron concentration in UWG.

scholarly journals Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer

2019 ◽  
Vol 9 (1) ◽  
pp. 162
Author(s):  
Ning An ◽  
Lei Ma ◽  
Guanyu Wen ◽  
Zhipeng Liang ◽  
Haitao Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Structure Design ◽  
Blocking Layer ◽  
Quantum Well Laser ◽  
Low Threshold ◽  
Current Densities ◽  
Better Than

A low threshold current density of 2 μm InGaAsSb/AlGaAsSb muti-quantum well (MQW) laser diode with carrier blocking layer (CBL) is demonstrated by simulation and fabrication. The carrier leakage is found to be theoretically suppressed for the devices with CBL. All the laser wafers are grown with a solid source Molecular Beam Epitaxy(MBE) System. Experimental results reveal the samples with CBL exhibits ultra-low threshold current densities of 142 A/cm2 and high slope efficiency of 0.158 W/A, which is better than 215 A/cm2 and 0.122 W/A achieved in the conventional InGaAsSb/AlGaAsSb LDs at room temperature. This improvement in device performance comes from meticulously designing the carrier blocking layers to increase carrier confinement and injection efficiency.

Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Monica Hansen ◽  
Paul Fini ◽  
Lijie Zhao ◽  
Amber Abare ◽  
Larry A. Coldren ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Internal Quantum Efficiency ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Laser ◽  
Low Dislocation Density ◽  
Multi Quantum Well ◽  
Improved Characteristics

AbstractInGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a twofold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

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