scholarly journals Utilization of Power Gating Technique for the Analysis of MPSoC Based On Dual Feedback Edge Triggered Flip Flop

Author(s):  
Satyaraj D ◽  
Bhanumathi V

Abstract With the persistent scaling of semiconductor technology, the embedded multi-processor platforms lifetime reliability has been the primary concern for the industry. The advancements in technology permit several microprocessors integration, dedicated digital hardware, and at times mixed-signal circuits on a single silicon die, specifically multi-processor system-on-a-chip (MPSoC). In this paper, the design and analysis of CMOS based MPSoC is made. A CMOS based MPSoC is designed with 45nm technology. In this design, ADC converter is used in which 10-bit data is given as input, and are converted into digital data. A double feedback edge triggered flip flop is designed. The implementation of flip flop, based on both feedback and triggering process, is more effective in the elimination of error occurrence. Power Gating (PG) technique is proposed which exploits the stacking effect to achieve high energy efficiency. Binary controlled stacked SRAM cell, based on a parallel cross-coupling feedback controller, is implemented to reduce the leakage loss and ground bouncing noise. An inverter, based on NMOS and CMOS, is used for the inverting process. The input voltage of 5v is given and is varied. Then, a 2-bit counter is employed, which is responsible for counting down or counting up. The counter should count down if the signal is high. The counter should count up, if the signal is low. Thus, this design will be helpful in the implementation of compact processing system which may also be employed for many real-time applications where there is a need of compact device. The benefits of this multi processors integration will be helpful in speeding the process thereby reducing the leakage power loss, power consumption, delay factor and so on. The analysis of performance is carried out using CMOS based Tanner EDA, and the outcomes are represented.

2021 ◽  
Author(s):  
Satyaraj D ◽  
Bhanumathi V

Abstract With the persistent scaling of semiconductor technology, the embedded multi-processor platforms lifetime reliability has been the primary concern for the industry. The advancements in technology permit several microprocessors integration, dedicated digital hardware, and at times mixed-signal circuits on a single silicon die, specifically multi-processor system-on-a-chip (MPSoC). In this paper, the design and analysis of CMOS based MPSoC is made. A CMOS based MPSoC is designed with 45nm technology. In this design, ADC converter is used in which 10-bit data is given as input, and are converted into digital data. A double feedback edge triggered flip flop is designed. The implementation of flip flop, based on both feedback and triggering process, is more effective in the elimination of error occurrence. Power Gating (PG) technique is proposed which exploits the stacking effect to achieve high energy efficiency. Binary controlled stacked SRAM cell, based on a parallel cross-coupling feedback controller, is implemented to reduce the leakage loss and ground bouncing noise. An inverter, based on NMOS and CMOS, is used for the inverting process. The input voltage of 5v is given and is varied. Then, a 2-bit counter is employed, which is responsible for counting down or counting up. The counter should count down if the signal is high. The counter should count up, if the signal is low. Thus, this design will be helpful in the implementation of compact processing system which may also be employed for many real-time applications where there is a need of compact device. The benefits of this multi processors integration will be helpful in speeding the process thereby reducing the leakage power loss, power consumption, delay factor and so on. The analysis of performance is carried out using CMOS based Tanner EDA, and the outcomes are represented.


Author(s):  
D. Shindo

Imaging plate has good properties, i.e., a wide dynamic range and good linearity for the electron intensity. Thus the digital data (2048x1536 pixels, 4096 gray levels in log scale) obtained with the imaging plate can be used for quantification in electron microscopy. By using the image processing system (PIXsysTEM) combined with a main frame (ACOS3900), quantitative analysis of electron diffraction patterns and high-resolution electron microscope (HREM) images has been successfully carried out.In the analysis of HREM images observed with the imaging plate, quantitative comparison between observed intensity and calculated intensity can be carried out by taking into account the experimental parameters such as crystal thickness and defocus value. An example of HREM images of quenched Tl2Ba2Cu1Oy (Tc = 70K) observed with the imaging plate is shown in Figs. 1(b) - (d) comparing with a structure model proposed by x-ray diffraction study of Fig. 1 (a). The image was observed with a JEM-4000EX electron microscope (Cs =1.0 mm).


2020 ◽  
Vol 10 (4) ◽  
pp. 534-547
Author(s):  
Chiradeep Mukherjee ◽  
Saradindu Panda ◽  
Asish K. Mukhopadhyay ◽  
Bansibadan Maji

Background: The advancement of VLSI in the application of emerging nanotechnology explores quantum-dot cellular automata (QCA) which has got wide acceptance owing to its ultra-high operating speed, extremely low power dissipation with a considerable reduction in feature size. The QCA architectures are emerging as a potential alternative to the conventional complementary metal oxide semiconductor (CMOS) technology. Experimental: Since the register unit has a crucial role in digital data transfer between the electronic devices, such study leading to the design of cost-efficient and highly reliable QCA register is expected to be a prudent area of research. A thorough survey on the existing literature shows that the generic models of Serial-in Serial Out (SISO), Serial-in-Parallel-Out (SIPO), Parallel-In- Serial-Out (PISO) and Parallel-in-Parallel-Out (PIPO) registers are inadequate in terms of design parameters like effective area, delay, O-Cost, Costα, etc. Results: This work introduces a layered T gate for the design of the D flip flop (LTD unit), which can be broadly used in SISO, SIPO, PISO, and PIPO register designs. For detection and reporting of high susceptible errors and defects at the nanoscale, the reliability and defect tolerant analysis of LTD unit are also carried out in this work. The QCA design metrics for the general register layouts using LTD unit is modeled. Conclusion: Moreover, the cost metrics for the proposed LTD layouts are thoroughly studied to check the functional complexity, fabrication difficulty and irreversible power dissipation of QCA register layouts.


2014 ◽  
Vol 2014 ◽  
pp. 1-10 ◽  
Author(s):  
Xiaohui Fan ◽  
Yangbo Wu ◽  
Hengfeng Dong ◽  
Jianping Hu

With the scaling of technology process, leakage power becomes an increasing portion of total power. Power gating technology is an effective method to suppress the leakage power in VLSI design. When the power gating technique is applied in sequential circuits, such as flip-flops and latches, the data retention is necessary to store the circuit states. A low leakage autonomous data retention flip-flop (ADR-FF) is proposed in this paper. Two high-Vthtransistors are utilized to reduce the leakage power consumption in the sleep mode. The data retention cell is composed of a pair of always powered cross-coupled inverters in the slave latch. No extra control signals and complex operations are needed for controlling the data retention and restoration. The data retention flip-flops are simulated with NCSU 45 nm technology. The postlayout simulation results show that the leakage power of the ADR-FF reduces 51.39% compared with the Mutoh-FF. The active power of the ADR-FF is almost equal to other data retention flip-flops. The average state mode transition time of ADR-FF decreases 55.98%, 51.35%, and 21.07% as compared with Mutoh-FF, Balloon-FF, and Memory-TG-FF, respectively. Furthermore, the area overhead of ADR-FF is smaller than other data retention flip-flops.


2014 ◽  
Vol 61 (6) ◽  
pp. 1755-1765 ◽  
Author(s):  
Djaafar Chabi ◽  
Weisheng Zhao ◽  
Erya Deng ◽  
Yue Zhang ◽  
Nesrine Ben Romdhane ◽  
...  

2016 ◽  
Vol 5 (2) ◽  
pp. 17-28
Author(s):  
Ravim ◽  
Suma K. V.

Designing a real-time BCI device requires an Electroencephalogram (EEG) acquisition system and a signal processing system to process that acquired data. EEG acquisition boards available in market are expensive and they are required to be connected to computer for any processing work. Various low cost Digital Signal Processor (DSP) boards available in market come with internal Analog to Digital converters and peripheral interfaces. The idea is to design a low cost EEG amplifier board that can be used with these commercially available DSP boards. The analog data from EEG amplifier can be converted to digital data by DSP board and sent to computer via an interface for algorithm development and further control operations. EEG amplifiers are highly affected by noise from environment. Proper noise reduction techniques are implemented and simulated in circuit design. Each filter stage and noise reduction circuit is evaluated for a low noise design.


Author(s):  
L. Saranya ◽  
C. Arvind ◽  
P. Karthigaikumar ◽  
K. Balachander
Keyword(s):  

1999 ◽  
Vol 320 (4-5) ◽  
pp. 377-377 ◽  
Author(s):  
Y. Terada ◽  
M. Tashiro ◽  
T. Takahashi ◽  
Y. Fukazawa ◽  
G. Kawaguchi ◽  
...  

1997 ◽  
Vol 487 ◽  
Author(s):  
Z. He ◽  
G. F. Knoll ◽  
D. K. Wehe ◽  
Y. F. Du

AbstractThis paper describes some novel techniques developed for directly measuring the electron mobility μe and mean free drift time Te in wide band gap semiconductors. These methods are based on a newly-developed digital data analysis system, in conjunction with single carrier charge sensing and depth sensing techniques. Compared with conventional methods, the new techniques are easier to implement, do not involve curve fitting, allow the use of high energy γ-rays and are not sensitive to variations in pulse rise time.


1965 ◽  
Vol 12 (4) ◽  
pp. 222-223 ◽  
Author(s):  
K. J. Foley ◽  
R. S. Jones ◽  
S. J. Lindenbaum ◽  
W. A. Love ◽  
S. Ozaki ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document