Laser enabled ultra-high doping patterns in graphene for rewritable photodetectors

2021 ◽  
Author(s):  
Yoonsoo Rho ◽  
Kyunghoon Lee ◽  
Letian Wang ◽  
Changhyun Ko ◽  
Yabin Chen ◽  
...  
Keyword(s):  
2D Materials ◽  
Structural Disorder ◽  
Solubility Limit ◽  
Graphene Monolayer ◽  
Chemical Doping ◽  
Electrical Mobility ◽  
Doping Density ◽  
Coverage Ratio ◽  
Geometric Configurations ◽  
Substitutional Doping

Abstract Chemical doping has been extensively studied for control of charge carrier polarity and concentration in two-dimensional (2D) van der Waals materials. However, conventional routes by substitutional doping or absorbed molecules suffer from degradation of the electrical mobility due to structural disorder, while the maximum doping density is set by the solubility limit of dopants. Here, we show that laser assisted chlorination can achieve high doping concentration (> 3×1013 cm− 2) in graphene monolayer with minimal mobility drop, while holding reversibility and spatial selectivity. Such superior doping scheme is enabled by two lasers with selected photon energies and geometric configurations, resulting to high Cl coverage ratio (C2Cl) and subsequent local Cl-removal without damaging graphene. Based on this method, we demonstrate rewritable graphene photodetector, manifesting high quality reversible doping patterns in graphene. We believe that the presented results offer a new route for chemical doping of 2D materials that may enable exotic optoelectronic applications.

scholarly journals 2D Materials: Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping (Adv. Funct. Mater. 16/2018)

2018 ◽  
Vol 28 (16) ◽  
pp. 1870105
Author(s):  
Kehao Zhang ◽  
Brian M. Bersch ◽  
Jaydeep Joshi ◽  
Rafik Addou ◽  
Christopher R. Cormier ◽  
...  
Keyword(s):  
2D Materials ◽  
Monolayer Mos2 ◽  
Substitutional Doping

Doping of Two-Dimensional Semiconductors: A Rapid Review and Outlook

MRS Advances ◽  
2019 ◽  
Vol 4 (51-52) ◽  
pp. 2743-2757 ◽  
Author(s):  
Kehao Zhang ◽  
Joshua Robinson
Keyword(s):  
2D Materials ◽  
Light Emitting Diode ◽  
Rapid Review ◽  
Two Dimensional ◽  
Phosphorus Doping ◽  
Light Emitting ◽  
The Past ◽  
Substitutional Doping ◽  
Nobel Prize In Physics ◽  
P Type

ABSTRACTDoping, as a primary technique to modify semiconductor transport, has achieved tremendous success in the past decades. For example, boron and phosphorus doping of Si modulates the dominant carrier type between p-type and n-type, serving as the backbone for the modern microelectronic technologies. Doped III-V semiconducting systems exhibit phenomenal optoelectronic properties. Magnesium doped gallium nitride plays an important role to build efficient blue light-emitting diode (LED), which won Nobel Prize in physics in 2014. The rise of two-dimensional (2D) materials sheds light on their potential in next generation electronic, optoelectronic, and quantum applications. These properties can further be controlled via doping of 2D materials, however, many challenges still remain in this field. Here, we present a rapid review on the recent achievements and challenges in the metastable and substitutional doping of 2D materials, followed by providing an outlook on integrating 2D materials into more advanced electronic architectures.

Tunable and Enhanced Performance of Graphene-Assisted Plasmonic Sensor with Photonic Spin Hall Effect in Near Infrared: Analysis Founded on Graphene’s Chemical Potential and Components of Light Polarization

2021 ◽  
Author(s):  
Yogendra Kumar Prajapati ◽  
Jitendra B. Maurya ◽  
Anuj K Sharma
Keyword(s):  
Hall Effect ◽  
Near Infrared ◽  
Chemical Potential ◽  
Light Polarization ◽  
Spin Hall Effect ◽  
Graphene Monolayer ◽  
Chemical Doping ◽  
Plasmonic Structure ◽  
Sensing Applications ◽  
Variable Chemical

Abstract In this work, we propose a graphene-assisted plasmonic structure with photonic spin Hall effect (PSHE) for sensing applications in near infrared (NIR) with an emphasis on tunable and spin control aspects leading to enhanced performance. We comprehensively investigate PSHE in view of variable chemical doping of graphene monolayer in the structure and manipulation of the spin dependent splitting by considering single and cross polarization states. There is observed a considerable variation in spin shift due to increase in chemical potential or Pauli blocking, which fundamentally controls the light absorption by graphene. Our simulation results reveal that the amplified spin dependent shift is 1.13×104 times higher than the conventional spin dependent shift at 0.436 eV of graphene chemical potential. Further, this structure is utilised for sensing application, and it is observed that graphene-assisted plasmonic based structure possesses significantly greater spin dependent sensitivity (5.53 times), figure of merit (8.56 × 105 times), and extremely finer limit of detection (by a factor of 18.10) are achieved compared to the structure without graphene. The results indicate that chosing the proposed graphene-assisted plasmonic structure with variable chemical potential and light polarization components, an extremely enhanced sensing performance can be achieved. The results are consistent with the physical rationale and are particularly important for potential biosensing applications.

scholarly journals High-Sensitivity Goos-Hänchen Shifts Sensor Based on BlueP-TMDCs-Graphene Heterostructure

Sensors ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 3605
Author(s):  
Lei Han ◽  
Zhimin Hu ◽  
Jianxing Pan ◽  
Tianye Huang ◽  
Dapeng Luo
Keyword(s):  
Surface Plasmon Resonance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
2D Materials ◽  
High Sensitivity ◽  
Hybrid Structure ◽  
Graphene Monolayer ◽  
Two Dimensional ◽  
Sensing Performance ◽  
Blue Phosphorene

Surface plasmon resonance (SPR) with two-dimensional (2D) materials is proposed to enhance the sensitivity of sensors. A novel Goos–Hänchen (GH) shift sensing scheme based on blue phosphorene (BlueP)/transition metal dichalogenides (TMDCs) and graphene structure is proposed. The significantly enhanced GH shift is obtained by optimizing the layers of BlueP/TMDCs and graphene. The maximum GH shift of the hybrid structure of Ag-Indium tin oxide (ITO)-BlueP/WS2–graphene is −2361λ with BlueP/WS2 four layers and a graphene monolayer. Furthermore, the GH shift can be positive or negative depending on the layer number of BlueP/TMDCs and graphene. For sensing performance, the highest sensitivity of 2.767 × 107λ/RIU is realized, which is 5152.7 times higher than the traditional Ag-SPR structure, 2470.5 times of Ag-ITO, 2159.2 times of Ag-ITO-BlueP/WS2, and 688.9 times of Ag-ITO–graphene. Therefore, such configuration with GH shift can be used in various chemical, biomedical and optical sensing fields.

scholarly journals Optical conductivity and superconductivity in highly overdoped La2−xCaxCuO4 thin films

2021 ◽  
Vol 118 (30) ◽  
pp. e2106170118
Author(s):  
Gideok Kim ◽  
Ksenia S. Rabinovich ◽  
Alexander V. Boris ◽  
Alexander N. Yaresko ◽  
Y. Eren Suyolcu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Conductivity ◽  
Hole Concentration ◽  
Mean Field Theory ◽  
Mean Field ◽  
Atomic Layer ◽  
Structural Disorder ◽  
Solubility Limit ◽  
Layer By Layer ◽  
The Impact

We have used atomic layer-by-layer oxide molecular beam epitaxy to grow epitaxial thin films of La2−xCaxCuO4 with x up to 0.5, greatly exceeding the solubility limit of Ca in bulk systems (x∼0.12). A comparison of the optical conductivity measured by spectroscopic ellipsometry to prior predictions from dynamical mean-field theory demonstrates that the hole concentration p is approximately equal to x. We find superconductivity with Tc of 15 to 20 K up to the highest doping levels and attribute the unusual stability of superconductivity in La2−xCaxCuO4 to the nearly identical radii of La and Ca ions, which minimizes the impact of structural disorder. We conclude that careful disorder management can greatly extend the “superconducting dome” in the phase diagram of the cuprates.

scholarly journals Predicting two-dimensional topological phases in Janus materials by substitutional doping in transition metal dichalcogenide monolayers

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Aniceto B. Maghirang ◽  
Zhi-Quan Huang ◽  
Rovi Angelo B. Villaos ◽  
Chia-Hsiu Hsu ◽  
Liang-Ying Feng ◽  
...  
Keyword(s):  
Transition Metal ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Industrial Applications ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Substitutional Doping ◽  
Metal Dichalcogenides ◽  
Physical And Chemical

Abstract Ultrathin Janus two-dimensional (2D) materials are attracting intense interest currently. Substitutional doping of 2D transition metal dichalcogenides (TMDs) is of importance for tuning and possible enhancement of their electronic, physical and chemical properties toward industrial applications. Using systematic first-principles computations, we propose a class of Janus 2D materials based on the monolayers MX2 (M = V, Nb, Ta, Tc, or Re; X = S, Se, or Te) with halogen (F, Cl, Br, or I) or pnictogen (N, P, As, Sb, or Bi) substitution. Nontrivial phases are obtained on pnictogen substitution of group VB (V, Nb, or Ta), whereas for group VIIB (Tc or Re), the nontrivial phases are obtained for halogen substitution. Orbital analysis shows that the nontrivial phase is driven by the splitting of M-dyz and M-dxz orbitals. Our study demonstrates that the Janus 2D materials have the tunability and suitability for synthesis under various conditions.

Electrons on the surface of 2D materials: from layered electrides to 2D electrenes

2017 ◽  
Vol 5 (43) ◽  
pp. 11196-11213 ◽  
Author(s):  
Daniel L. Druffel ◽  
Adam H. Woomer ◽  
Kaci L. Kuntz ◽  
Jacob T. Pawlik ◽  
Scott C. Warren
Keyword(s):  
2D Materials ◽  
Electrical Mobility ◽  
High Carrier ◽  
Work Functions

We review layered and ultrathin electrides with exciting properties like high electrical mobility, high carrier concentrations, and low work functions.

Measurement and Reduction of Radiation Damage in Frozen Hydrated Crystalline Specimens

1978 ◽  
Vol 36 (3) ◽  
pp. 70-77 ◽  
Author(s):  
R.M. Glaeser ◽  
S.B. Hayward
Keyword(s):  
Diffraction Pattern ◽  
Structural Information ◽  
Structural Disorder ◽  
Structural Features ◽  
Biological Macromolecules ◽  
Diffraction Intensity ◽  
Object Structure ◽  
Specimen Material ◽  
Unit Cells ◽  
Identical Unit

Highly ordered or crystalline biological macromolecules become severely damaged and structurally disordered after a brief electron exposure. Evidence that damage and structural disorder are occurring is clearly given by the fading and eventual disappearance of the specimen's electron diffraction pattern. The fading and disappearance of sharp diffraction spots implies a corresponding disappearance of periodic structural features in the specimen. By the same token, there is a oneto- one correspondence between the disappearance of the crystalline diffraction pattern and the disappearance of reproducible structural information that can be observed in the images of identical unit cells of the object structure. The electron exposures that result in a significant decrease in the diffraction intensity will depend somewhat upon the resolution (Bragg spacing) involved, and can vary considerably with the chemical makeup and composition of the specimen material.

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

Schottky diodes based on 2D materials for environmental gas monitoring: a review on emerging trends, recent developments and future perspectives

2021 ◽  
Author(s):  
Minu Mathew ◽  
Chandra Sekhar Rout
Keyword(s):  
Gas Sensing ◽  
2D Materials ◽  
Schottky Diodes ◽  
High Sensitivity ◽  
Future Perspectives ◽  
Working Temperature ◽  
Emerging Trends ◽  
Gas Sensing Properties ◽  
Recent Developments ◽  
Sensitivity And Selectivity

This review details the fundamentals, working principles and recent developments of Schottky junctions based on 2D materials to emphasize their improved gas sensing properties including low working temperature, high sensitivity, and selectivity.

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