scholarly journals Структурные, оптические и фоточувствительные свойства пленок PbS, осажденных в присутствии CaCl-=SUB=-2-=/SUB=-

Author(s):  
Л.Н. Маскаева ◽  
Е.В. Мостовщикова ◽  
В.Ф. Марков ◽  
В.И. Воронин

AbstractPolycrystalline lead-sulfide (PbS) films doped with calcium are synthesized on sitall and glass substrates by chemical bath deposition with the use of thiocarbamide and a CaCl_2 additive at concentrations of up to 5 mM. Introduction of the CaCl_2 additive into the reaction solution greatly prolongs the induction period of the process of synthesis. The thicknesses of the PbS and PbS(Ca) films are, correspondingly, 200 and 150 nm at an average crystallite dimension of ~100 nm. The maximum calcium content in the films is 0.06 at % for layers on sitall substrates and 0.11 at % for layers on glass substrates. Doping with calcium does not influence the crystal structure of lead sulfide (the cubic B 1 structure, space group Fm 3 $$\bar {m}$$ ) but brings about an increase in the crystal-lattice period from a = 0.59343(2) nm to a = 0.59413(1) nm, an increase in microstrains, and partial ordering of the crystallites forming the film. Upon the introduction of calcium, the band gap decreases from E _ g = 0.40 eV at 295 K (0.38 eV at 90 K) to E _ g = 0.38 eV (0.37 eV). The introduction of up to 5 mM of CaCl_2 into the reaction mixture increases the voltage–power sensitivity of the films by a factor of ~1.7, which is attributed to oxygen-containing compounds formed in the films as a result of the increase in the induction period of the process of synthesis.

1997 ◽  
Vol 53 (3) ◽  
pp. 457-465 ◽  
Author(s):  
A. D. Rae ◽  
D. C. Craig ◽  
I. G. Dance ◽  
M. L. Scudder ◽  
P. A. W. Dean ◽  
...  

The crystal structure of Pb(SC6H5)2 is pseudo-C-centred orthorhombic, a = 54.06 (1), b = 11.468 (1), c = 7.4387 (8) Å, \alpha = \beta = \gamma = 90°, Z = 16, and may be described as a partial ordering of a 1:1 disordered parent structure of symmetry Pmcn, Z = 4 (a′ = a/2, b′ = b/2, c′ = c), in which the mirror imposes a 1:1 disorder on two-dimensionally polymeric layers perpendicular to a*. An ideally ordered structure has monoclinic space group C1121/d (P21/c using an alternative axis system b, c, [a + b]/2), but may also be described as two inversion-related substructures of Cmc21 pseudo- symmetry, where the b-glide planes of one substructure coincide with the mirror planes of the other and vice versa. Moving one substructure by b/2 relative to the other creates a different orientation of the structure. The crystal studied showed a partial disorder of each substructure relative to origins b/2 apart [0.964 (4):0.036 for one substructure and 0.584 (3):0.416 for the other]. This lowers the symmetry of the average structure to C1121 with intensities realistically described as K 2[(1−\delta)|F(hkl)|2 + \delta|F(hkl)|2], where K 2 for h odd, k odd reflections is 0.444 (7) of the value for h even, k even reflections, \delta is 0.325 (5) and F(hkl) is the structure factor for an ideally ordered structure. Final values for R of 0.046 and 0.090 were obtained for the 844 h even, k even and 687 h odd, k odd reflections with I(h) > 3\sigma(I(h)) used in refinement. A bond-valence interpretation of the bonding within the polymeric layer structure is given.


2013 ◽  
Vol 684 ◽  
pp. 67-71 ◽  
Author(s):  
Je Hun Kim ◽  
Hyun Goo Choi ◽  
Ting Zhang ◽  
Chul Han Kwon ◽  
Young Ho Kim ◽  
...  

TiO2-SiO2thin film system is known to be very attractive to use for photocatalytic and display applications. In this study, TiO2-SiO2nano-composite solutions were prepared by adding colloidal solutions consisted of different SiO2nano-particle sizes (7-50 nm) into TiO2powder-dispersed solutions. TiO2-SiO2thin films on glass substrates were fabricated by the dip-coating technique and their crystal structure, surface morphology and photocatalytic properties were investigated as a function of SiO2particle size. While the SiO2particle size had little influence on the crystal structure of thin films, the photocatalytic activity and anti-reflectance (anti-glare) characteristics were found to be dependent on the SiO2particle size. This result could be explained in terms of surface characteristics and the order of degradation of methylene blue under UV light irradiation.


2009 ◽  
Vol 294 ◽  
pp. 85-92 ◽  
Author(s):  
A.A. Ibrahim

Lead sulfide (PbS) thin films were prepared by thermal evaporation onto glass substrates from PbS powder. The structure and DC electrical properties of evaporated PbS thin film sandwich structures with thicknesses (d) up to 600 nm have been investigated. X-ray diffraction studies showed that the films were crystalline, with a preferred orientation in the [111] direction. Capacitance measurements indicated that the films had a relative permittivity of 5.7. Room-temperature current density-voltage (J–V) characteristics revealed ohmic conduction below a transition voltage (Vt) and a power–law dependence with an exponent of ≈ 2 at higher voltages. This behaviour was interpreted in terms of space–charge limited conductivity controlled by an exponential distribution of traps below the conduction band edge. Further evidence for this conduction process was provided by a linear dependence of Vt upon d2. Analysis of the results yielded a room temperature electron concentration no of ≈ (3.9 – 5.4) x 109 m-3.


Author(s):  
Mohammad Ghaffar Faraj

Lead sulfide (PbS) thin films of different molarities (0.05 M, 0.075 M and 0.1 M) were prepared on glass substrates at 325 °C by chemical spray pyrolysis (CSP) technique. X-ray diffraction patterns confirm the proper phase formation of the PbS. The X-ray diffraction patterns’ results reveal that the all of PbS films have a face centered cubic structure with preferential reflection of (200) plane. The crystallite grain size was calculated using Scherrer formula and it is found that the 0.1M has maximum crystallite grain size (37.4 nm). Depending on the molarity, Hall measurement showed that the electrical resistivity and mobility at room temperature varied in the range 6.3x103Ω.cm to 2.1x103Ω.cm and 4.79cm2/V.S to 24.3 cm2/V.S.


1990 ◽  
Vol 5 (7) ◽  
pp. 1538-1543 ◽  
Author(s):  
H. Toraya ◽  
N. Masciocchi ◽  
W. Parrish

The crystal structure of Na2Al2Ti6O16 was refined by the Rietveld method using synchrotron radiation and conventional x-ray powder data, and the agreement factors were Rp = 3.35%, Rwp = 4.30%, and RBragg = 6.39% for synchrotron data. The formula based on the chemical analysis and 16 O atoms is Na1.97Al1.82Ti6.15O16. The crystal data are monoclinic, C2/m, a = 12.1239(3) Å, b = 3.7749(1) Å, c = 6.4180(2) Å, β = 107.59(1)°, V = 280.00(4) Å3, Z = 1, and Dx = 3.82 g cm−3. The site occupancy refinement showed a partial ordering of Al3+ and Ti4+ ions in the two-crystallographically independent octahedral sites.


2015 ◽  
Vol 1747 ◽  
Author(s):  
Naoki Yamamoto ◽  
Kirihiko Morisawa

ABSTRACTIndium tin oxide (ITO) nanowires (NWs) were grown on glass substrates by using ITO sputtering sources (targets) with SnO2 contents in the range of approximately 5.0 to 30.0 wt%. NW growth became apparent at temperatures above 125 °C, and the In, Sn and O contents of the resulting ITO NWs were similar to those of the ITO source. NWs grown from ITO sources containing 5.0 to 12.0 wt% SnO2 had circular or elliptical cross-sections, while those obtained from sources with 12.0 to 30.0 wt% SnO2 exhibited square cross-sections. ITO NWs approximately 2 μm in length were obtained as single crystals with a cubic crystal structure. The resistivity of an ITO NW was measured using four nanoprobes in conjunction with a field emission scanning electron microscope and was found to range from 0.13 to 0.6 μΩ-m, values that were approximately one order of magnitude lower than those of transparent ITO films.


Author(s):  
Zhibiao Ma ◽  
Huiying Liu ◽  
Lingxu Wang ◽  
Bingdong Yao ◽  
Yangyang Wang ◽  
...  

In this work, BiFe0.91Zr0.09O3 (BFZrO) films are successfully prepared on ITO/glass substrates via sol-gel synthesis. The effects of different annealing atmospheres (air, O2, and N2) on the crystal structure, defect...


2020 ◽  
Vol 76 (6) ◽  
pp. 585-590
Author(s):  
Alexander Ovchinnikov ◽  
Svilen Bobev

A ternary derivative of Li3Bi with the composition Li3–x–y In x Bi (x ≃ 0.14, y ≃ 0.29) was produced by a mixed In+Bi flux approach. The crystal structure adopts the space group Fd\overline{3}m (No. 227), with a = 13.337 (4) Å, and can be viewed as a 2 × 2 × 2 superstructure of the parent Li3Bi phase, resulting from a partial ordering of Li and In in the tetrahedral voids of the Bi fcc packing. In addition to the Li/In substitutional disorder, partial occupation of some Li sites is observed. The Li deficiency develops to reduce the total electron count in the system, counteracting thereby the electron doping introduced by the In substitution. First-principles calculations confirm the electronic rationale of the observed disorder.


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