scholarly journals Особенности транспорта электронов и фотопроводимости в слое наноразмерных частиц сульфида свинца

2019 ◽  
Vol 45 (8) ◽  
pp. 3
Author(s):  
М.И. Шишкин ◽  
М.В. Гавриков ◽  
И.Т. Ягудин ◽  
А.Г. Роках
Keyword(s):  
Basic Mechanism ◽  
Charge Carriers ◽  
Optical Measurements ◽  
Free Charge ◽  
Current Voltage ◽  
Wide Range ◽  
Current Change ◽  
Current Voltage Characteristics ◽  
Lead Sulfide Nanoparticles ◽  
A Current

In the lead sulfide nanoparticles-based layers deposited from alcohol suspensions, analysis of the current-voltage characteristics made it possible to establish the basic mechanism of electron transport. Previously, using optical measurements in the range of 3500 nm, it was shown that the organic component in such layers was practically absent. When exposed to wide range radiation corresponding to the “transparency window” of the atmosphere of 8000–14000 nm, a current change in PbS nanodust was detected, where, as previously shown, absorption on free charge carriers can occur.

Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

scholarly journals Modelling Properties of an Alkaline Electrolyser

Energies ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 3073
Author(s):  
Krzysztof Górecki ◽  
Małgorzata Górecka ◽  
Paweł Górecki
Keyword(s):  
Potassium Hydroxide ◽  
Dynamic Properties ◽  
Operating Conditions ◽  
High Productivity ◽  
Electrolysis Process ◽  
Average Value ◽  
Current Voltage ◽  
Wide Range ◽  
Current Voltage Characteristics ◽  
Parameter Values

This paper proposes a model of an electrolyser in the form of a subcircuit dedicated for SPICE. It takes into account both the electric static and dynamic properties of the considered device and is devoted to the optimisation of the parameters of the signal feeding this electrolyser, making it possible to obtain a high productivity and efficiency of the electrolysis process. Parameter values the describing current-voltage characteristics of the electrolyser take into account the influence of the concentration of the potassium hydroxide (KOH) solution. A detailed description of the structure and all the components of this model is included in the paper. The correctness of the elaborated model is verified experimentally in a wide range of changes in the value of the feeding current and concentration of the KOH solution. Some computations illustrating the influence of the amplitude, average value, duty factor, and frequency of feeding current on the productivity and efficiency of the electrolysis process are performed. On the basis of the obtained results of the investigations, some recommendations for the operating conditions of electrolysers are formulated.

scholarly journals Устойчивые к полевым повреждениям структуры кремний-сверхтонкий окисел (42 нм)-поликремний

2021 ◽  
Vol 55 (1) ◽  
pp. 24
Author(s):  
Д.А. Белорусов ◽  
Е.И. Гольдман ◽  
В.Г. Нарышкина ◽  
Г.В. Чучева
Keyword(s):  
Electronic States ◽  
Oxide Thickness ◽  
The State ◽  
Charge Carriers ◽  
Potential Relief ◽  
Insulator Interface ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ultrathin Oxide ◽  
Silicon Silicon

Results of studies of silicon−silicon-ultrathin oxide (42 A˚ )−polysilicon structures structures stabile resistant to field damage are presented. It was found that the total recharging of localized electronic states and minority charge carriers, concentrated at the substrate-insulator interface, which occurs with a change in the field voltage and is close to the same characteristic of structures with an oxide thickness of 37 A˚ . The current, flowing through SiO2, in the enrichment state of the semiconductor increases with increasing voltage much more strongly than in the state of depletion. Moreover, the asymmetry of current-voltage characteristics in relation to the polarity of the voltage, falling on the insulator in samples with a thickness of 42 A˚ SiO2 is more pronounced than in structures with an oxide of 37 A˚ . An explanation for this asymmetry is possible, if the potential relief in the insulator has a maximum, significantly shifted to the oxide−polysilicon interface, and the potential on the branch from the semiconductor side significantly decreases to the contact with the substrate.

scholarly journals Investigation of temperature dependences of current-voltage characteristics of hybrid organic materials based on zinc complexes

2021 ◽  
pp. 81-87
Author(s):  
Andrey Tyutyunik ◽  
Vladimir Gurchenko ◽  
Alim Mazinov
Keyword(s):  
Coordination Compound ◽  
Electrochemical Analysis ◽  
Zinc Complexes ◽  
Charge Carriers ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Homo And Lumo ◽  
Current Voltage Characteristics ◽  
Fundamental Values

In this work, we analyzed the current-voltage characteristics in the temperature range of the hybrid organic material C24H24N6O3Zn in order to determine the prospects for using this compound as a semiconductor material. The range of temperature measurements was from 270 to 330 K. An electrochemical analysis of the studied coordination compound was carried out, the energies of the HOMO and LUMO levels were calculated. The method of obtaining, microscopy, and also the method of measuring the temperature dependences of the electrical properties of the obtained thin films of these hybrid materials based on zinc complexes are described. A number of fundamental values of the films of this coordination compound have been calculated: the activation energy is  0.88 eV and the mobility of charge carriers is  1.4710-11 cm V-1 s-1.

scholarly journals Photoconductivity of Thin Films Obtained from a New Type of Polyindole

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 228
Author(s):  
Renat B. Salikhov ◽  
Akhat G. Mustafin ◽  
Ilnur N. Mullagaliev ◽  
Timur R. Salikhov ◽  
Anastasiia N. Andriianova ◽  
...  
Keyword(s):  
Thin Films ◽  
Fluorescence Spectra ◽  
Test Sample ◽  
Charge Carriers ◽  
Transport Layer ◽  
Photoluminescence Spectra ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
New Type ◽  
Current Voltage Characteristics

The optoelectronic properties of a new poly(2-ethyl-3-methylindole) (MPIn) are discussed in this paper. The absorption and photoluminescence spectra were studied. The electronic spectrum of MPIn showed a single absorption maximum at 269 nm that is characteristic of the entire series of polyindoles. The fluorescence spectra show that the emission peaks of the test sample are centered around 520 nm. The photoconductivity of thin film samples of MPIn polyindole was studied by measuring the current-voltage characteristics under ultraviolet radiation with a wavelength of 350 nm. Samples of phototransistors were obtained, where thin films of MPIn polyindole were used as a transport layer, and their characteristics were measured and analyzed. The value of the quantum efficiency and the values of the mobility of charge carriers in thin polyindole films were estimated.

Electrical properties modulation of thin film solar cell using gold nanostructures at textured FTO/p–i–n interface

2015 ◽  
Vol 08 (02) ◽  
pp. 1550017 ◽  
Author(s):  
A. Gentile ◽  
G. Cacciato ◽  
F. Ruffino ◽  
R. Reitano ◽  
G. Scapellato ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Open Circuit ◽  
Optical Measurements ◽  
Gradual Reduction ◽  
Materials Properties ◽  
Barrier Heights ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Open Circuit Voltages

We report about the modulation of the electrical properties of thin film solar cells due to the incorporation of size-selected Au nanostructures (NSs) at a textured FTO/p–i–n interface. By increasing the Au NSs size, the analyses of current-voltage characteristics show lower Schottky barrier heights and the gradual reduction of the open-circuit voltages (V OC ). The optical measurements show higher parasitic absorption by larger Au NSs that reduces the amount of radiation transmitted by the transparent to absorber layer. This process decreases the number of photo-generated carriers and may explain the V OC reduction related to the devices with larger Au NSs at the interface. So, the correlation between materials properties and device performances was established.

Current-voltage characteristics of thin Ge2Sb2Te5 films taken using a measuring circuit with a current source

2014 ◽  
Vol 59 (4) ◽  
pp. 546-550 ◽  
Author(s):  
S. A. Fefelov ◽  
L. P. Kazakova ◽  
S. A. Kozyukhin ◽  
K. D. Tsendin ◽  
D. Arsova ◽  
...  
Keyword(s):  
Current Source ◽  
Measuring Circuit ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
A Current

FLOW DRIVEN ELECTRONIC TRANSPORT IN CARBON NANOTUBES

2005 ◽  
Vol 04 (05n06) ◽  
pp. 839-848 ◽  
Author(s):  
A. K. SOOD ◽  
SHANKAR GHOSH ◽  
N. KUMAR
Keyword(s):  
Electronic Transport ◽  
Electrical Response ◽  
Flow Speed ◽  
Electrical Signal ◽  
Charge Carriers ◽  
Free Charge ◽  
Single Walled Carbon Nanotube ◽  
Nanotube Bundles ◽  
Wide Range ◽  
Direct Forcing

The flow of a liquid on single-walled carbon nanotube bundles induces an electrical signal (voltage/current) in the sample along the direction of the flow. The electrical response is found to be logarithmic in the flow speed over a wide range. The magnitude of the flow induced electrical signal generated depends sensitively on the ionic conductivity and the polar nature of the liquid, and electrical biasing of the nanotubes can control its direction. Our measurements suggest that the dominant mechanism responsible for this highly sub-linear response should involve a direct forcing of the free charge carriers in the nanotubes by the fluctuating Coulombic field of the liquid flowing past it.

scholarly journals Исследование вольт-амперных характеристик светодиодных гетероструктур на основе InAsSb в диапазоне температур 4.2-300 K

2021 ◽  
Vol 55 (6) ◽  
pp. 502
Author(s):  
А.А. Семакова ◽  
Н.Л. Баженов ◽  
К.Д. Мынбаев ◽  
А.В. Черняев ◽  
С.С. Кижаев ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Solid Solutions ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Leakage Currents ◽  
Temperature Range ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Additional Channel

The results of a study of the current-voltage characteristics of LED heterostructures with an active region based on InAsSb solid solutions and InAsSb/InAs and InAsSb/InAsSbP quantum wells (QWs) in the temperature range 4.2–300 K are presented. The mechanisms of the carrier transport depending on the temperature and design of the heterostructure was determined. It is shown that the charge transport through the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K; in the temperature range 4.2–77 K, the contribution of the tunnelling mechanism was observed. For heterostructure InAs/InAs/InAs0.15Sb0.31P0.54 the additional channel of the carrier transport was determined. It was shown that the presence of 108 QWs InAs0.88Sb0.12/InAs into the active region of the heterostructure led to an increase in the leakage currents through the heterojunction in the whole temperature range, which is probably related to the tunnelling of charge carriers.

scholarly journals Electrical conductivity of lithium tantalate thin film

Cerâmica ◽  
2020 ◽  
Vol 66 (379) ◽  
pp. 291-296
Author(s):  
S. I. Gudkov ◽  
A. V. Solnyshkin ◽  
D. A. Kiselev ◽  
A. N. Belov
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Space Charge ◽  
Rf Magnetron Sputtering ◽  
Lithium Tantalate ◽  
Film Structure ◽  
Charge Carriers ◽  
Transport Mechanisms ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract The electrical conductivity of lithium tantalate thin film on the silicon substrate was studied. The film structure was prepared by RF magnetron sputtering. In general, the current-voltage characteristics were asymmetric and similar to that of a diode. The current-voltage characteristics had several sections associated with various transport mechanisms of current carriers. The main conductivity mechanism was related to the space-charge-limited current. The current-voltage characteristics showed that there was a mismatch between the forward and backward runs. One of the reasons for such behavior is a space charge accumulation due to charge carriers which were injected from the electrode and did not relax.

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