scholarly journals Effect of Annealing Temperature on Physical Properties of Indium Doped Cadmium Oxide Thin Films

2015 ◽  
Vol 11 (4) ◽  
pp. 3475-3481 ◽  
Author(s):  
Jinan A. Abd ◽  
Enas M. Al-Robayi ◽  
Zainab J. Shanan ◽  
Nadir F. Habubi
Keyword(s):  
Thin Films ◽  
Optical Transmission ◽  
Annealing Temperature ◽  
Cadmium Oxide ◽  
Optical And Electrical Properties ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cdo Thin Films ◽  
Cdo Films

     Nanostructured indium doped CdO thin films were prepared by spray pyrolysis on glass substrate and annealed at 200-400 ᵒC for 1 hour. The structural, optical, and electrical properties of prepared films were studied using different techniques such as optical transmission, photoluminescence, X-ray diffraction, and Hall measurement. X-ray analysis shows that the In doped CdO films are preferentially orientated along (111) crystallographic directions. Increasing of annealing temperature increases the films packing density and reorient the crystallites along (1 1 1) plane.  The optical transmissions of all annealed films decreased with increasing annealing temperature. An increasing in the absorbance and photoluminescence spectra with increasing annealing temperature was denoted in all films. The band gap value of CdO:4%In equals to 2.5 eV and it decreases with annealing temperature and reaches of 2.45 eV for 400°C. The resistivity of annealed films decreased as annealing temperature increased. While high conductivity achieved in the present study is found to be 11.37 ×102 (Ω.cm)-1 for annealing at 400°C. 

scholarly journals A Study of Structural and Photoluminescence for Al-Doped CdO Thin Films

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Bong Ju Lee ◽  
Jin Jeong
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Time ◽  
Processing Parameters ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
X Ray ◽  
Grain Sizes ◽  
Cdo Thin Films

Al-doped CdO thin films were prepared by radio frequency magnetron sputtering at different deposition time and substrate temperature. X-ray diffraction showed that the changes in the intensities of the (200), (220), and (311) planes followed a similar trend with increase in deposition time. The surface of the thin film was examined by scanning electron microscopy. Grain sizes of Al-doped CdO thin films increased significantly with increasing deposition time. The film thicknesses were 0.09, 0.12, 0.20, and 0.225 μm for the deposition times of 1, 2, 3, and 4 h, respectively. The photoluminescence spectra of the Al-doped CdO thin films were measured at room temperature. The photoluminescence wavelength changed in the sequence, green, blue, green, and blue, with increasing deposition time, which indicates that blue light emitting films can be fabricated by adjusting the processing parameters.

scholarly journals The effect of copper doping on the structural, optical, and electrical properties of cadmium oxide thin films using the spray pyrolysis technique

2021 ◽  
Author(s):  
Fatemeh Davari ◽  
Mohammad Reza Fadavieslam
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Hall Effect ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Cadmium Oxide ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Cu Doping ◽  
X Ray

Abstract In this study, the pure and Cu doped CdO thin films with various doping concentrations (0 to 5 at.%) were deposited on soda-lime glass substrates, using the chemical spray pyrolysis technique. The effects of Cu doping on the structural, optical, and electrical properties of thin films were, then, investigated. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy equipped with an energy dispersive x-ray analyzer (FESEM-EDX), atomic force microscopy (AFM), ultraviolet-visible spectroscopy, and electrical resistance; van der Pauw techniques were also used to measure the Hall effect. X-ray diffraction studies showed that the thin films were polycrystalline only with cadmium oxide phase with the cubic face-centered crystal structure and the preferred orientations were along (111), (200), (220), (311), and (311) planes. The FE-SEM and AFM images also showed that with an increase in Cu doping levels, the grain size and surface roughness of the thin films decreased from 472 to 38 nm and from 163 to 54 nm, respectively. The expected element compositions were confirmed by EDX. The optical bandgap of the thin films ranged from 2.42 to 2.56 eV, and as Cu dopant increased, so, too, the optical bandgap. As the Cu doping concentration increased from 0 to 5 (at.%), the electrical resistivity and Seebeck coefficient were found to increase from 3.74⋅10− 4 to 8.77⋅10− 3 Ω.cm and 8.28⋅10− 6 to 2.52⋅10− 5 v/k (at 100 Co temperature difference), respectively; the carrier concentration and carrier mobility were also found to decrease from 3.24⋅1020 to 1.76⋅1020 cm− 3 and from 55.5 to 4.05 cm2/v.s, respectively. The Hall effect and thermoelectric studies revealed that the films exhibited an n-type conductivity.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Effects of Indium Incorporation on the Optical Properties of ZnO Films

2006 ◽  
Vol 11-12 ◽  
pp. 159-162 ◽  
Author(s):  
Yong Ge Cao ◽  
Lei Miao ◽  
Sakae Tanemura ◽  
Yasuhiko Hayashi ◽  
Masaki Tanemura
Keyword(s):  
Optical Transmission ◽  
Full Width Half Maximum ◽  
Structural Disorder ◽  
Band Gaps ◽  
Zno Films ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Optical Band Gaps ◽  
Xrd Patterns

Transparent indium-doped ZnO (IZO) films with low In content (<6at%) were fabricated through radio-frequency (rf) helicon magnetron sputtering. Formation of In-Zn-O solid solution was confirmed by X-ray diffraction (XRD) patterns. Incorporation of indium into ZnO films enhances the optical transmission in the visible wavelength. The optical band-gaps slightly increase from 3.25eV (ZnO) to 3.28eV (In0.04Zn0.96O) and to 3.30eV (In0.06Zn0.94O) due to Burstain-Moss effect. The Urbach tail parameter E0, which is believed to be a function of structural disorder, increases from 79meV (ZnO), to 146meV (In0.04Zn0.96O), and to 173meV (In0.06Zn0.94O), which is consistent with increase of Full-Width Half-Maximum (FWHM) in corresponding XRD patterns. Decreasing in crystal quality with increasing indium concentration is also confirmed by photoluminescence spectra.

scholarly journals A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 118 ◽  
Author(s):  
Ho-Yun Lee ◽  
Chi-Wei He ◽  
Ying-Chieh Lee ◽  
Da-Chuan Wu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electronmicroscopy ◽  
Scanning Electron

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

scholarly journals Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

2019 ◽  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Optical And Electrical Properties ◽  
Fluorine Doping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

scholarly journals Photocatalytic Activity and Optical Properties of Blue Persistent Phosphors under UV and Solar Irradiation

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
C. R. García ◽  
L. A. Diaz-Torres ◽  
J. Oliva ◽  
M. T. Romero ◽  
P. Salas
Keyword(s):  
Photocatalytic Activity ◽  
Annealing Temperature ◽  
Uv Light ◽  
Solar Irradiation ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Water Cleaning ◽  
Different Temperatures ◽  
The Eu

Blue phosphorescent strontium aluminosilicate powders were prepared by combustion synthesis route and a postannealing treatments at different temperatures. X-ray diffraction analysis showed that phosphors are composed of two main hexagonal phases: SrAl2O4and Sr3Al32O51. The morphology of the phosphors changed from micrograins (1000°C) to a mixture of bars and hexagons (1200°C) and finally to only hexagons (1300°C) as the annealing temperature is increased. Photoluminescence spectra showed a strong blue-green phosphorescent emission centered atλem=455 nm, which is associated with4f65d1→4f6  (8S7/2)transition of the Eu2+. The sample annealed at 1200°C presents the highest luminance value (40 Cd/m2) with CIE coordinates (0.1589, 0.1972). Also, the photocatalytic degradation of methylene blue (MB) under UV light (at 365 nm) was monitored. Samples annealed at 1000°C and 1300°C presented the highest percentage of degradation (32% and 38.5%, resp.) after 360 min. In the case of photocatalytic activity under solar irradiation, the samples annealed at 1000°C, 1150°C, and 1200°C produced total degradation of MB after only 300 min. Hence, the results obtained with solar photocatalysis suggest that our powders could be useful for water cleaning in water treatment plants.

Microstructure and Mechanical Properties of Chromium Carbide Coatings Deposited by Magnetron Sputtering Technique

2019 ◽  
Vol 397 ◽  
pp. 118-124
Author(s):  
Linda Aissani ◽  
Khaoula Rahmouni ◽  
Laala Guelani ◽  
Mourad Zaabat ◽  
Akram Alhussein
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Annealing Temperature ◽  
Diffusion Mechanism ◽  
X Ray Diffraction ◽  
Chromium Carbides ◽  
X Ray ◽  
Mechanical And Structural Properties

From the hard and anti-corrosions coatings, we found the chromium carbides, these components were discovered by large studies; like thin films since years ago. They were pointed a good quality for the protection of steel, because of their thermal and mechanical properties for this reason, it was used in many fields for protection. Plus: their hardness and their important function in mechanical coatings. The aim of this work joins a study of the effect of the thermal treatment on mechanical and structural properties of the Cr/steel system. Thin films were deposited by cathodic magnetron sputtering on the steel substrates of 100C6, contain 1% wt of carbon. Samples were annealing in vacuum temperature interval between 700 to 1000 °C since 45 min, it forms the chromium carbides. Then pieces are characterising by X-ray diffraction, X-ray microanalysis and scanning electron microscopy. Mechanical properties are analysing by Vickers test. The X-ray diffraction analyse point the formation of the Cr7C3, Cr23C6 carbides at 900°C; they transformed to ternary carbides in a highest temperature, but the Cr3C2 doesn’t appear. The X-ray microanalysis shows the diffusion mechanism between the chromium film and the steel sample; from the variation of: Cr, Fe, C, O elements concentration with the change of annealing temperature. The variation of annealing temperature shows a clean improvement in mechanical and structural properties, like the adhesion and the micro-hardness.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

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