scholarly journals Heat dissipation and temperature distribution in long interconnect lines

2010 ◽  
Vol 58 (1) ◽  
pp. 119-124
Author(s):  
K. Gnidzinska ◽  
G. De Mey ◽  
A. Napieralski
Keyword(s):  
Time Delay ◽  
Temperature Distribution ◽  
Integrated Circuit ◽  
Power Dissipation ◽  
Time Delays ◽  
Heat Dissipation ◽  
Chip Area ◽  
Signal Synchronization ◽  
Global Interconnects ◽  
Interconnect Lines

Heat dissipation and temperature distribution in long interconnect linesThermal and time delay aspects of long interconnect lines have been investigated. To design a modern integrated circuit we need to focus on very long global interconnects in order to achieve the desired frequency and signal synchronization. The long interconnection lines introduce significant time delays and heat generation in the driver transistors. Introducing buffers helps to spread the heat production more homogenously along the line but consumes extra power and chip area. To ensure the functionality of the circuit, it is compulsory to give priority to the time delay aspect and then the optimized solution is found by making the power dissipation as homogenous as possible and consequently the temperature distribution T (relative to ambient) as low as possible. The technology used for simulations is 65 nm node. The occurring phenomena have been described in a quantitative and qualitative way.

Coupled Thermal and Structural Parametric Analysis of TSVs in 3D Electronics

2010 ◽  
Author(s):  
Fahad Mirza ◽  
Bharathkrishnan Muralidharan ◽  
Poornima Mynampati ◽  
Saket Karajgikar ◽  
Dereje Agonafer
Keyword(s):  
Integrated Circuit ◽  
Heat Dissipation ◽  
Thermal Stresses ◽  
Coefficient Of Thermal Expansion ◽  
Structural Response ◽  
Research Area ◽  
Mechanical Analysis ◽  
Junction Temperature ◽  
Chip Area ◽  
High Package Density

The convergence and miniaturization of the consumer electronic products such as cell phones and digital cameras has led to the vertical integration of packages i.e., 3-D packaging. Chip-stacking (3-D) is emerging as a powerful tool that satisfies such Integrated Circuit (IC) package requirements. 3-D technology looks to be the future of hand-held electronics; hence, making it an important research area. Stacked chips are peripherally interconnected through wires; this increases the package size and usually requires an extra “interposer” layer between the chips, causing substantial delays. Due to high package density and chip-stacking on top of each other, heat dissipation from the die becomes a concern. To overcome these thermal challenges and provide better inter-chip and chip-substrate electrical connection, Through Silicon Via (TSV) technology is being implemented in 3-D electronics. Electrical interconnection and heat dissipation improves with the number of TSVs. But, there is a trade-off; TSVs occupy the chip real estate, resulting in reduced silicon efficiency when compared to the baseline (no-TSV) scenario. Coefficient of thermal expansion (CTE) mismatch and reduced chip area causes thermal stresses and may lead to premature chip failures. This can be a major reliability issue. In this paper, a parametric study of the number of TSVs in a test vehicle (TV) consisting of 2 vertically stacked dies and TSVs (between the die and the substrate) has been performed using ANSYS WORKBENCH. A quarter symmetry model has been formulated to study the various cases as a function of number of TSVs. Each die has an area of 5.7mm2 with 0.1-mm thickness and 0.5W power rating. The TSV diameter is 50-μm each with a SiO2 insulation film of 25-μm thickness. Junction temperature and thermal resistance is determined to obtain the best case in terms of temperature distribution on the die. Furthermore, thermo-mechanical analysis is performed for all the TSV configurations and a guideline is proposed based on thermal and structural response.

scholarly journals Numerical Simulation of the Temperature on the Metallization of an Integrated Circuit and its Impact on Interconnect Lifetime

2020 ◽  
Vol 15 (2) ◽  
pp. 1-5
Author(s):  
Rafael Oliveira Nunes ◽  
J. L. R. Bohorquez ◽  
R. L. De Orio
Keyword(s):  
Numerical Simulation ◽  
Finite Element ◽  
Temperature Distribution ◽  
Integrated Circuit ◽  
Power Dissipation ◽  
Operational Amplifier ◽  
Temperature Increase ◽  
Element Model ◽  
Design Stage ◽  
The Impact

This paper demonstrates a finite element model to investigate the temperature change of the interconnects of an integrated circuit due to the power dissipation of the transistors in the substrate. The temperature of the local interconnect is more significantly affected, exhibiting an increase of 49 K and 34 K, for the Metal 1 and Metal 2, respectively. We discuss the impact of the temperature increase in the electromigration and, as a consequence in the lifetime of an operational amplifier, which demonstrates the importance of considering the metallization temperature distribution in the design stage.

scholarly journals Effect of Lines and Vias Density on the BEOL Temperature Distribution

2019 ◽  
Vol 14 (2) ◽  
pp. 1-9
Author(s):  
Rafael Oliveira Nunes ◽  
Roberto Lacerda De Orio
Keyword(s):  
Temperature Distribution ◽  
Large Temperature ◽  
Direct Influence ◽  
Design Environment ◽  
Standard Analysis ◽  
Resistance Increase ◽  
Thermal Distribution ◽  
Operation Temperature ◽  
Global Interconnects ◽  
Interconnect Lines

A method to calculate the temperature distribution on the BEOL structure and its impact on the EM in a design environment has been developed and implemented. The study for a 45 nm technology indicated a large temperature variation from the local to the global interconnects, which should be considered for the EM induced resistance increase of the line, in contrast to the standard analysis through a fixed operation temperature throughout the BEOL. The results show that a significant additional temperature above 50°C exist on the layers M1 to M6 due the power dissipated from transistors. The temperature reduction on the local layer is evaluated increasing the number of vias and enlarging the interconnect lines, both with a direct influence on the BEOL thermal distribution. A reduction of 62.9°C is obtained for M1 layer, considering a fraction volume of 40% for lines and 6% for vias.

Benchmarking Study on the Thermal Management Landscape for Three-Dimensional Integrated Circuits: From Back-Side to Volumetric Heat Removal

2016 ◽  
Vol 138 (1) ◽  
Author(s):  
Thomas Brunschwiler ◽  
Arvind Sridhar ◽  
Chin Lee Ong ◽  
Gerd Schlottig
Keyword(s):  
Integrated Circuits ◽  
Thermal Management ◽  
Integrated Circuit ◽  
Power Dissipation ◽  
High Performance ◽  
Heat Dissipation ◽  
Hybrid Approach ◽  
Three Dimensional ◽  
Heat Removal ◽  
Back Side

An overview of the thermal management landscape with focus on heat dissipation from three-dimensional (3D) chip stacks is provided in this study. Evolutionary and revolutionary topologies, such as single-side, dual-side, and finally, volumetric heat removal, are benchmarked with respect to a high-performance three-tier chip stack with an aggregate power dissipation of 672 W. The thermal budget of 50 K can be maintained by three topologies, namely: (1) dual-side cooling, implemented by a thermally active interposer, (2) interlayer cooling with four-port fluid delivery and drainage at 100 kPa pressure drop, and (3) a hybrid approach combining interlayer with embedded back-side cooling. Of all the heat-removal concepts, interlayer cooling is the only approach that scales with the number of dies in the chip stack and hence enables extreme 3D integration. However, the required size of the microchannels competes with the requirement of low through-silicon-via (TSV) heights and pitches. A scaling study was performed to derive the TSV pitch that is compatible with cooling channels to dissipate 150 W/cm2 per tier. An active integrated circuit (IC) area of 4 cm2 was considered, which had to be implemented on the varying tier count in the stack. A cuboid form factor of 2 mm × 4 mm × 2.55 mm results from a die count of 50. The resulting microchannels of 2 mm length allow small hydraulic diameters and thus a very high TSV density of 1837 1/mm2. The accumulated heat flux and the volumetric power dissipation are as high as 7.5 kW/cm2 and 29 kW/cm3, respectively.

Micromechanics Measurements Applied to Integrated Circuit Microelectronics

1997 ◽  
Vol 473 ◽  
Author(s):  
David R. Clarke
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Fracture Resistance ◽  
Interface Fracture ◽  
New Techniques ◽  
Fracture Properties ◽  
Engineered Structures ◽  
Mechanical And Fracture Properties ◽  
Interconnect Lines ◽  
Metallic Interconnect

ABSTRACTAs in other engineered structures, fracture occasionally occurs in integrated microelectronic circuits. Fracture can take a number of forms including voiding of metallic interconnect lines, decohesion of interfaces, and stress-induced microcracking of thin films. The characteristic feature that distinguishes such fracture phenomena from similar behaviors in other engineered structures is the length scales involved, typically micron and sub-micron. This length scale necessitates new techniques for measuring mechanical and fracture properties. In this work, we describe non-contact optical techniques for probing strains and a microscopic “decohesion” test for measuring interface fracture resistance in integrated circuits.

DESIGN AND THERMAL ANALYSIS OF BRAKE ROTOR WITH DIFFERENT MATERIALS

2020 ◽  
Vol 15 (2) ◽  
Author(s):  
Sugunarani S ◽  
Santhosh V
Keyword(s):  
Temperature Distribution ◽  
Heat Dissipation ◽  
Brake Disc ◽  
Element Analysis ◽  
Analysis Techniques ◽  
Engineering Software ◽  
The Finite Element Analysis ◽  
Brake Rotor ◽  
Grey Cast ◽  
Aluminium Metal

This work deals with the analysis of heat generation and dissipation in the disc brake of a car during braking and the following release period by using computer-aided engineering software for three different materials of the rotor disc and brake pad. The objective of this work is to analyze the temperature distribution of rotor disc during operation using COMSOL Multiphysics. The work uses the finite element analysis techniques to calculate and predict the temperature distribution on the brake disc and to identify the critical temperature of the brake rotor disc. Conduction, convection and radiation of heat transfer have been analyzed. The results obtained from the analysis indicates that different material on the same retardation of the car during braking shows different temperature distribution. A comparative study was made between grey cast iron (GCI), Aluminium Metal Matrix Composite (AMMC), Alloy steel materials are used for brake disc and the best material for making brake disc based on the rate of heat dissipation have been suggested.

scholarly journals Delay-Dependent Robust Stabilization for Nonlinear Large Systems via Decentralized Fuzzy Control

2011 ◽  
Vol 2011 ◽  
pp. 1-20 ◽  
Author(s):  
Chun-xia Dou ◽  
Zhi-sheng Duan ◽  
Xing-bei Jia ◽  
Xiao-gang Li ◽  
Jin-zhao Yang ◽  
...  
Keyword(s):  
Time Delay ◽  
Fuzzy Control ◽  
Upper Bound ◽  
Time Delays ◽  
Sufficient Conditions ◽  
Large System ◽  
Disturbance Attenuation ◽  
Robust Controller ◽  
Large Systems ◽  
Delay Dependent

A delay-dependent robust fuzzy control approach is developed for a class of nonlinear uncertain interconnected time delay large systems in this paper. First, an equivalent T–S fuzzy model is extended in order to accurately represent nonlinear dynamics of the large system. Then, a decentralized state feedback robust controller is proposed to guarantee system stabilization with a prescribedH∞disturbance attenuation level. Furthermore, taking into account the time delays in large system, based on a less conservative delay-dependent Lyapunov function approach combining with linear matrix inequalities (LMI) technique, some sufficient conditions for the existence ofH∞robust controller are presented in terms of LMI dependent on the upper bound of time delays. The upper bound of time-delay and minimizedH∞performance index can be obtained by using convex optimization such that the system can be stabilized and for all time delays whose sizes are not larger than the bound. Finally, the effectiveness of the proposed controller is demonstrated through simulation example.

scholarly journals Thermal Analysis of Cold Plate with Different Configurations for Thermal Management of a Lithium-Ion Battery

Batteries ◽  
2020 ◽  
Vol 6 (1) ◽  
pp. 17
Author(s):  
Seyed Saeed Madani ◽  
Erik Schaltz ◽  
Søren Knudsen Kær
Keyword(s):  
Thermal Analysis ◽  
Temperature Distribution ◽  
Lithium Ion Battery ◽  
Thermal Management ◽  
Electric Vehicles ◽  
Heat Dissipation ◽  
Lithium Ion ◽  
Cold Plate ◽  
Liquid Cooling ◽  
Cooling Design

Thermal analysis and thermal management of lithium-ion batteries for utilization in electric vehicles is vital. In order to investigate the thermal behavior of a lithium-ion battery, a liquid cooling design is demonstrated in this research. The influence of cooling direction and conduit distribution on the thermal performance of the lithium-ion battery is analyzed. The outcomes exhibit that the appropriate flow rate for heat dissipation is dependent on different configurations for cold plate. The acceptable heat dissipation condition could be acquired by adding more cooling conduits. Moreover, it was distinguished that satisfactory cooling direction could efficiently enhance the homogeneity of temperature distribution of the lithium-ion battery.

scholarly journals Methods for broadband signals mutual time delays estimating enhancement

2019 ◽  
Vol 30 ◽  
pp. 03012
Author(s):  
Ilya Grin ◽  
Oleg Morozov
Keyword(s):  
Time Delay ◽  
Computational Efficiency ◽  
Radiation Source ◽  
Time Delays ◽  
Time Delay Estimation ◽  
Ambiguity Function ◽  
Delay Estimation ◽  
Reliability Criterion ◽  
Optimal Processing ◽  
Narrowband Channels

This paper considers methods for estimating the mutual time delay of broadband signals recorded by satellites based multi-position systems for determining the location of a radiation source. All methods considered are based on modified algorithms for calculating the ambiguity function. The presented algorithms are based on the extraction of narrowband channels from the studied signals and their further optimal processing. The reliability criterion for mutual time delay estimation by the presented methods was evaluated. Based on the results and analysis of computational efficiency, viability of methods considered and their modifications was determined.

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