scholarly journals The Impact of Spacer Oxide Material on the Underlapped SOI-nFinFET Working as Charged Based Radiation Sensor

2021 ◽  
Vol 16 (2) ◽  
pp. 1-6
Author(s):  
William Da Silva Fonseca ◽  
Paula Ghedini Der Agopian
Keyword(s):  
Series Resistance ◽  
Drain Current ◽  
Oxide Material ◽  
Electrical Behavior ◽  
Radiation Sensor ◽  
Current Variation ◽  
Fringing Field ◽  
Charge Concentration ◽  
Low Permittivity ◽  
The Impact

In this work, the influence of the underlap region on the electrical behavior of a SOI-nFinFET transistor has been studied with the purpose of radiation sensing. The analysis was performed by evaluating the impact of variations in the underlap region on the on-state current and by studying its sensitivity. The impact of the underlap region on the drain current and, consequently, on the devices’ sensitivity was explained by the analysis of series resistance, the fringing field and electron density. Considering the main impact of radiation in these devices, the study of sensitivity was also performed taking into consideration the variation of oxide trapped charges density. When applying the transistor to a harsh environment, the Underlapped FinFET showed to be a quite respectable radiation sensor, since the results performed with very good sensitivities when using long and narrow spacer oxide with low permittivity oxide. With thicker spacer oxide in the underlap region, the charge concentration makes the spreading field high enough to overcome the series resistance effect, which results in a less sensible device. Once presented the on-state current variation of the Underlapped FinFET, the study turns radiation-sensing purpose applicable using the excellent characteristics of this device, which is shown in detail throughout this work.

scholarly journals Probabilistic Modelling of Variation in FGMOSFET

2017 ◽  
Vol 11 (1) ◽  
pp. 50-62
Author(s):  
Rawid Banchuin ◽  
Roungsan Chaisricharoen
Keyword(s):  
Goodness Of Fit ◽  
Drain Current ◽  
Probabilistic Modelling ◽  
Goodness Of Fit Test ◽  
Analysis And Design ◽  
Trade Offs ◽  
Saturation Region ◽  
Current Variation ◽  
The Impact ◽  
Statistical Variability

The analytical probabilistic modelling of random variation in the drain current of a Floating-Gate MOSFET (FGMOSFET) induced by manufacturing process variations has been performed. Both triode and saturation region operated FGMOSFETs have been considered. The results have been found to be very efficient since they can accurately fit the probabilistic distributions of normalized random drain current variations of the candidate triode and saturation FGMOSFETs obtained using the 0.25μm level BSIM3v3 based Monte-Carlo SPICE simulations, where the variation of the saturation FGMOSFET has been found to be more severe. These results also satisfy the goodness of fit test at a very high level of confidence and more accurately than the results of the previous probabilistic modelling attempts. Using our results, many statistical parameters, probabilities and the objective functions, which are useful in statistical/variability aware analysis and design involving FGMOSFETs can be formulated. The impact of drain current variation upon the design trade-offs can be studied. It has been found that the occurrence of the drain current variation is absolutely certain. Moreover, the analytical probabilistic modelling and computationally efficient statistical/ variability aware simulation of FGMOSFET based circuits can also be performed. 

scholarly journals In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing

Energies ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 72
Author(s):  
Sergiu Spataru ◽  
Peter Hacke ◽  
Dezso Sera
Keyword(s):  
Thermal Cycling ◽  
Power Loss ◽  
Stress Testing ◽  
Series Resistance ◽  
Short Circuit ◽  
In Situ Measurement ◽  
Mechanical Degradation ◽  
Model Parameters ◽  
The Impact

An in-situ method is proposed for monitoring and estimating the power degradation of mc-Si photovoltaic (PV) modules undergoing thermo-mechanical degradation tests that primarily manifest through cell cracking, such as mechanical load tests, thermal cycling and humidity freeze tests. The method is based on in-situ measurement of the module’s dark current-voltage (I-V) characteristic curve during the stress test, as well as initial and final module flash testing on a Sun simulator. The method uses superposition of the dark I-V curve with final flash test module short-circuit current to account for shunt and junction recombination losses, as well as series resistance estimation from the in-situ measured dark I-Vs and final flash test measurements. The method is developed based on mc-Si standard modules undergoing several stages of thermo-mechanical stress testing and degradation, for which we investigate the impact of the degradation on the modules light I-V curve parameters, and equivalent solar cell model parameters. Experimental validation of the method on the modules tested shows good agreement between the in-situ estimated power degradation and the flash test measured power loss of the modules, of up to 4.31 % error (RMSE), as the modules experience primarily junction defect recombination and increased series resistance losses. However, the application of the method will be limited for modules experiencing extensive photo-current degradation or delamination, which are not well reflected in the dark I-V characteristic of the PV module.

Electrical behavior of an octahedral layered OL-1-type manganese oxide material

Ionics ◽  
2012 ◽  
Vol 19 (2) ◽  
pp. 201-214 ◽  
Author(s):  
N. P. Arias ◽  
M. T. Dávila ◽  
O. Giraldo
Keyword(s):  
Manganese Oxide ◽  
Oxide Material ◽  
Electrical Behavior

Impact of interface trap charges on Junctionless double and triple metal gate High-k Gate All Around Nanowire FET based Alzheimer Biosensor

2021 ◽  
Author(s):  
Rishu Chaujar ◽  
Mekonnen Getnet Yirak
Keyword(s):  
Threshold Voltage ◽  
Positive Impact ◽  
Drain Current ◽  
Interface Trap ◽  
Metal Gate ◽  
High K ◽  
Current Threshold ◽  
Subthreshold Voltage ◽  
Output Characteristics ◽  
The Impact

Abstract In this work, junctionless double and triple metal gate high-k gate all around nanowire field-effect transistor-based APTES biosensor has been developed to study the impact of ITCs on device sensitivity. The analytical results were authenticated using ‘‘ATLAS-3D’’ device simulation tool. Effect of different interface trap charge on the output characteristics of double and triple metal gate high-k gate all around junctionless NWFET biosensor was studied. Output characteristics, like transconductance, output conductance,drain current, threshold voltage, subthreshold voltage and switching ratio, including APTES biomolecule, have been studied in both devices. 184% improvement has been investigated in shifting threshold voltage in a triple metal gate compared to a double metal gate when APTES biomolecule immobilizes on the nanogap cavity region under negative ITCs. Based on this finding, drain off-current ratio and shifting threshold voltage were considered as sensing metrics when APTES biomolecule immobilizes in the nanogap cavity under negative ITCs which is significant for Alzheimer's disease detection. We signifies a negative ITC has a positive impact on our proposed biosensor device compared to positive and neutral ITCs.

scholarly journals Understanding the Impact of Hydrogen Activation by SrCe0.8Zr0.2O3−δ Perovskite Membrane Material on Direct Non-Oxidative Methane Conversion

2022 ◽  
Vol 9 ◽  
Author(s):  
Sichao Cheng ◽  
Su Cheun Oh ◽  
Mann Sakbodin ◽  
Limei Qiu ◽  
Yuxia Diao ◽  
...  
Keyword(s):  
Methane Conversion ◽  
Membrane Reactor ◽  
Membrane Reactors ◽  
Fixed Bed Reactor ◽  
Perovskite Oxide ◽  
Oxide Material ◽  
Hydrogen Activation ◽  
Permeable Membrane ◽  
The Impact

Direct non-oxidative methane conversion (DNMC) converts methane (CH4) in one step to olefin and aromatic hydrocarbons and hydrogen (H2) co-product. Membrane reactors comprising methane activation catalysts and H2-permeable membranes can enhance methane conversion by in situ H2 removal via Le Chatelier's principle. Rigorous description of H2 kinetic effects on both membrane and catalyst materials in the membrane reactor, however, has been rarely studied. In this work, we report the impact of hydrogen activation by hydrogen-permeable SrCe0.8Zr0.2O3−δ (SCZO) perovskite oxide material on DNMC over an iron/silica catalyst. The SCZO oxide has mixed ionic and electronic conductivity and is capable of H2 activation into protons and electrons for H2 permeation. In the fixed-bed reactor packed with a mixture of SCZO oxide and iron/silica catalyst, stable and high methane conversion and low coke selectivity in DNMC was achieved by co-feeding of H2 in methane stream. The characterizations show that SCZO activates H2 to favor “soft coke” formation on the catalyst. The SCZO could absorb H2in situ to lower its local concentration to mitigate the reverse reaction of DNMC in the tested conditions. The co-existence of H2 co-feed, SCZO oxide, and DNMC catalyst in the present study mimics the conditions of DNMC in the H2-permeable SCZO membrane reactor. The findings in this work offer the mechanistic understanding of and guidance for the design of H2-permeable membrane reactors for DNMC and other alkane dehydrogenation reactions.

scholarly journals The Role of Silicon Heterojunction and TCO Barriers on the Operation of Silicon Heterojunction Solar Cells: Comparison between Theory and Experiment

2021 ◽  
Vol 2021 ◽  
pp. 1-12
Author(s):  
Yaser Abdulraheem ◽  
Moustafa Ghannam ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Ivan Gordon
Keyword(s):  
Solar Cells ◽  
Large Scale ◽  
Surface Passivation ◽  
Series Resistance ◽  
Crystalline Silicon ◽  
Thermionic Emission ◽  
Analytical Description ◽  
Theoretical Explanation ◽  
The Impact

Photovoltaic devices based on amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction interfaces hold the highest efficiency as of date in the class of silicon-based devices with efficiencies exceeding 26% and are regarded as a promising technology for large-scale terrestrial PV applications. The detailed understanding behind the operation of this type of device is crucial to improving and optimizing its performance. SHJ solar cells have primarily two main interfaces that play a major role in their operation: the transparent conductive oxide (TCO)/a-Si:H interface and the a-Si:H/c-Si heterojunction interface. In the work presented here, a detailed analytical description is provided for the impact of both interfaces on the performance of such devices and especially on the device fill factor ( FF ). It has been found that the TCO work function can dramatically impact the FF by introducing a series resistance element in addition to limiting the forward biased current under illumination causing the well-known S-shape characteristic in the I-V curve of such devices. On the other hand, it is shown that the thermionic emission barrier at the heterojunction interface can play a major role in introducing an added series resistance factor due to the intrinsic a-Si:H buffer layer that is usually introduced to improve surface passivation. Theoretical explanation on the role of both interfaces on device operation based on 1D device simulation is experimentally verified. The I-V characteristics of fabricated devices were compared to the curves produced by simulation, and the observed degradation in the FF of fabricated devices was explained in light of analytical findings from simulation.

Enhancement and Modeling of Drain Current in Negative Capacitance Double Gate TFET

2021 ◽  
Author(s):  
SHIKHA U S ◽  
Rekha K James ◽  
Jobymol Jacob ◽  
Anju Pradeep
Keyword(s):  
Drain Current ◽  
Gate Oxide ◽  
Negative Capacitance ◽  
Double Gate ◽  
High K ◽  
Gate Control ◽  
Effect Transistor ◽  
Dimensional Simulation ◽  
The Impact ◽  
Low K

Abstract The drain current improvement in a Negative Capacitance Double Gate Tunnel Field Effect Transistor (NC-DG TFET) with the help of Heterojunction (HJ) at the source-channel region is proposed and modeled in this paper. The gate oxide of the proposed TFET is a stacked configuration of high-k over low-k to improve the gate control without any lattice mismatches. Tangent Line Approximation (TLA) method is used here to model the drain current accurately. The model is validated by incorporating two dimensional simulation of DG-HJ TFET with one dimensional Landau-Khalatnikov (LK) equation. The model matches excellently with the device simulation results. The impact of stacked gate oxide topology is also studied in this paper by comparing the characteristics with unstacked gate oxide. Voltage amplification factor (Av), which is an important parameter in NC devices is also analyzed.

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