scholarly journals Effect of Current Density on Properties Of Nickel-Silicon Carbide Composites

2016 ◽  
Vol 21 (1) ◽  
pp. 82-85
Author(s):  
Kailash Hama ◽  
Armila Rajbhandari Nyachhyon ◽  
Gobinda Gyawali ◽  
Soo Wohn Lee
Keyword(s):  
Silicon Carbide ◽  
Coefficient Of Friction ◽  
Current Density ◽  
Surface Texture ◽  
Cetyltrimethylammonium Bromide ◽  
Deposition Technique ◽  
Regular Surface ◽  
Homogeneous Surface ◽  
Nickel Silicon ◽  
Sulfamate Bath

Nickel-Silicon Carbide (Ni-SiC) composite coating has been prepared by two electrode electrochemical co-deposition technique in nickel sulfamate bath. The Cetyltrimethylammonium bromide (CTAB) was added in bath as cationic surfactant whereas saccharine as a grain modifier. The effect of current density during deposition was systematically studied and optimized to get homogeneous surface texture with utmost microhardness and deprived coefficient of friction. The result revealed that 60 mA/cm2 current density was found to be the optimum current density which showed the highest microhardness of 590 ± 10 Hv and lowest coefficient of friction with regular surface morphology.Journal of Institute of Science and TechnologyVol. 21, No. 1, 2016, Page : 82-85

scholarly journals EFFECT OF STIRRING RATE ON ELECTROCHEMICAL CODEPOSITION OF Ni-SiC COMPOSITE

2015 ◽  
Vol 12 (12) ◽  
pp. 30-33
Author(s):  
Kailash Hamal ◽  
Armila Rajbhandari ◽  
Gobinda Gyawali ◽  
Soo Wohn Lee
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Cationic Surfactant ◽  
Coefficient Of Friction ◽  
Crystalline Phase ◽  
Crystal Orientation ◽  
Xrd Analysis ◽  
Stirring Rate ◽  
Nickel Silicon ◽  
Sulfamate Bath

Nickel-Silicon Carbide (Ni-SiC) composite has been prepared by electrochemical codeposition technique. Nickel sulfamate bath was used along with grain modifier saccharine and cationic surfactant cetyltrimetylammonium bromide (CTAB). The effect of stirring rate was systematically studied and optimized to get well dispersed SiC particles in appropriate amount. Mixed crystalline phase with reinforced [2 1 1] crystal orientation was obtained by XRD analysis. The result revealed that, 250 revolutions per minute (rpm) is optimum stirring rate for the electrochemical codeposition of Ni–SiC. Coating prepared at 250 rpm showed highest microhardness and lowest coefficient of friction with better surface morphology and well distributed nano SiC particles.Scientific World, Vol. 12, No. 12, September 2014, page 30-33       

The influence of current density and bath composition on the electrodeposition of nickel and nickel/silicon carbide composite

2003 ◽  
Vol 81 (6) ◽  
pp. 193-198 ◽  
Author(s):  
Lidia Burzyńska ◽  
Ewa Rudnik ◽  
Ludwik Błaz ◽  
Monika Kotula ◽  
Zdzislaw Sierpiński ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Current Density ◽  
Bath Composition ◽  
Carbide Composite ◽  
Nickel Silicon ◽  
Electrodeposition Of Nickel

Mechanical properties of nickel silicon carbide nanocomposites

2002 ◽  
Vol 328 (1-2) ◽  
pp. 137-146 ◽  
Author(s):  
A.F. Zimmerman ◽  
G. Palumbo ◽  
K.T. Aust ◽  
U. Erb
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Nickel Silicon

Study on Electrodeposition of Ni-Graphite Composite Coatings in Sulfamate Bath

2010 ◽  
Vol 150-151 ◽  
pp. 1546-1550 ◽  
Author(s):  
Xiang Zhu He ◽  
Xiao Wei Zhang ◽  
Xin Li Zhou ◽  
Zhi Hong Fu
Keyword(s):  
Surface Morphology ◽  
Process Parameters ◽  
Current Density ◽  
Graphite Particle ◽  
Particle Concentration ◽  
Composite Coatings ◽  
Nickel Matrix ◽  
Graphite Composite ◽  
Surface Morphologies ◽  
Sulfamate Bath

This paper presented the composite coatings of nickel with graphite particle on the aluminum substrate using a nickel sulfamate bath. Effects of graphite particle concentration on the surface morphologies of the composite coatings were investigated. The inclusion of graphite particle into metal deposits was dependent on many process parameters, including particle concentration, current density, pH and temperature. Results of SEM and XRD demonstrated that graphite particle had successfully deposited on that nickel matrix; besides, the surface morphology of coatings obtained from sulfamate bath containing 2g/L graphite particle dispersed more uniformly than the ones with higher concentration.

Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

2013 ◽  
Vol 740-742 ◽  
pp. 958-961 ◽  
Author(s):  
Shuji Katakami ◽  
Hiroyuki Fujisawa ◽  
Kensuke Takenaka ◽  
Hitoshi Ishimori ◽  
Shinji Takasu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Leakage Current Density ◽  
Current Density ◽  
Field Effect ◽  
Oxidation Process ◽  
Doping Profile ◽  
Base Layer ◽  
Channel Mobility ◽  
Insulated Gate Bipolar Transistor ◽  
Blocking Voltage

We fabricated and characterized an ultrahigh voltage (>10kV) p-channel silicon carbide insulated gate bipolar transistor (SiC-IGBT) with high channel mobility. Higher field-effect channel mobility of 13.5 cm2/Vs was achieved by the combination of adopting an n-type base layer with a retrograde doping profile and additional wet re-oxidation annealing (wet-ROA) at 1100°C in the gate oxidation process. The on-state characteristics of the p-channel SiC-IGBT at 200°C showed the low differential specific on-resistance of 24 mΩcm2 at VG = -20 V. The forward blocking voltage of the p-channel SiC-IGBT at 25°C was 10.2 kV a the leakage current density of 1.0 μA/cm2.

Studies on Friction and Formation of Transfer Layer in HCP Metals

2008 ◽  
Author(s):  
Pradeep L. Menezes ◽  
Kishore ◽  
Satish V. Kailas
Keyword(s):  
Coefficient Of Friction ◽  
Surface Texture ◽  
Soft Materials ◽  
Hard Material ◽  
Layer Formation ◽  
Ambient Conditions ◽  
Transfer Layer ◽  
Stick Slip ◽  
Stick Slip Motion ◽  
Slip Motion

Surface texture plays an important role as it predominantly controls the frictional behavior and transfer layer formation at the contacting surfaces. In the present investigation, basic studies were conducted using inclined pin-on-plate sliding tester to understand the role of surface texture of hard material on coefficient of friction and transfer layer formation when sliding against soft materials. HCP materials such as pure Mg and pure Zn were used as pins while 080 M40 steel was used as plate in the tests. Two surface parameters of steel plates — roughness and texture — were varied in the tests. Tests were conducted in ambient conditions under both dry and lubricated conditions. The morphologies of the worn surfaces of the pins and the formation of transfer layer on the counter surfaces were observed using a scanning electron microscope. It was observed for both the pin materials that the occurrence of stick-slip motion, the transfer layer formation and the value of coefficient of friction as well as its two components, namely, adhesion and plowing, depend primarily on surface texture. The effect of surface texture on coefficient of friction was attributed to the variation of plowing component of friction for different surfaces. Both the plowing component of friction and amplitude of stick-slip motion were highest for the surface texture that promotes plane strain conditions while these were lowest for the texture that favors plane stress conditions at the interface.

Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions

2020 ◽  
Vol 1004 ◽  
pp. 464-471
Author(s):  
Sarah Rugen ◽  
Siddarth Sundaresan ◽  
Ranbir Singh ◽  
Nando Kaminski
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Current Density ◽  
High Power ◽  
Stacking Faults ◽  
Bipolar Junction Transistors ◽  
Mode Operation ◽  
Different Temperatures ◽  
Current Densities ◽  
The Impact

Bipolar silicon carbide devices are attractive for high power applications offering high voltage devices with low on-state voltages due to plasma flooding. Unfortunately, these devices suffer from bipolar degradation, which causes a significant degradation of the on-state voltage. To explore the generation of stacking faults, which cause the degradation, the impact of the current density and temperature on bipolar degradation is investigated in this work. The analysis is done by stressing the base-collector diode of 1.2 kV bipolar junction transistors (BJTs) as well as the BJTs in common-emitter mode operation with different current densities at different temperatures.

Composite Films of Nickel / Silicon Carbide

1997 ◽  
Vol 495 ◽  
Author(s):  
Maria Hepel
Keyword(s):  
Silicon Carbide ◽  
Corrosion Resistance ◽  
Vickers Microhardness ◽  
Composite Films ◽  
Deposition Potential ◽  
Nucleation And Growth ◽  
Steel Substrates ◽  
Nickel Silicon ◽  
Electrodeposition Of Nickel ◽  
Sic Films

ABSTRACTThe electrodeposition of nickel/silicon carbide (Ni/SiC) composite films formed from modified Watt's bath solutions under potentiostatic conditions on steel substrates was investigated. The effects of deposition potential, pH, variable concentration of SiC in suspension, and additives, such as coumarin and EDTA, on the nickel nucleation and growth transients, as well as on the composition and morphology of Ni/SiC films are described. Improved Vickers microhardness and corrosion resistance of these composite films were found in comparison to those of particle-free deposits.

scholarly journals Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

1999 ◽  
Vol 14 (5) ◽  
pp. 1860-1864 ◽  
Author(s):  
C. R. Foschini ◽  
P. C. Joshi ◽  
J. A. Varela ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Current Density ◽  
Chemical Solution Deposition ◽  
Random Access ◽  
Random Access Memory ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Access Memory ◽  
Solution Deposition

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650 °C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700 °C for 60 min. The leakage current density of the films was lower than 10−9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

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