Techniques to Remove the C4 Die from a Ceramic Package

1998 ◽  
Author(s):  
Mehrdad Mahanpour ◽  
Andy Gray ◽  
Jose Hulog ◽  
Pat Chang
Keyword(s):  
Failure Analysis ◽  
Photon Emission ◽  
Emission Analysis ◽  
Methods And Techniques

Abstract C4 (Controlled Collapse Chip Connection) failure analysis compared to conventional packages (DIP- LCC- QFP, etc.) is not trivial. For instance, one has to thin the C4 die for IR microscope inspection or for photon emission analysis. Then, after failure analysis on the die, it must be removed for deprocessing or further analysis. Three methods and techniques will be discussed for removing the C4 die from the package without damaging the die. However, for each technique it is very important to know the condition of the die and package prior to die removal. The method used will differ, for example, if the die is thinned or not.

Device Ioff Mapping—Analysis of Ring Oscillator by Optical Beam Induced Resistance Change

2015 ◽  
Author(s):  
Greg M. Johnson ◽  
Ziyan Xu ◽  
Christopher D’Aleo
Keyword(s):  
Failure Analysis ◽  
Technology Development ◽  
Photon Emission ◽  
Ring Oscillator ◽  
Ring Oscillators ◽  
Rapid Improvement ◽  
Resistance Change ◽  
Emission Analysis ◽  
Multiple Defect ◽  
Line Technology

Abstract The ring oscillator is an important tool for inline monitoring during technology development, as it contains the most important front end of line technology features, is testable at first metal, and generally shows a good correlation to SRAM yield. This work explores various failure analysis techniques for the ring oscillator, during the development of 14 nm FinFET technology. OBIRCH, which is typically a DC technique, was operated with voltages as low as 0.15 V to find multiple defect mechanisms affecting the yield of ring oscillators, which operate at a frequencies in the GHz range. In contrast to typical photon emission analysis of ring oscillators, examines the devices which are flipping on, it is here proposed that the OBIRCH spots which are generated are indications of the Ioff, or the leakage of devices in the inverter stages across the ring. The results from this failure analysis approach enabled a rapid improvement in yield not only of the ring oscillator itself but of the SRAM.

Analysis of Delta Iddq Soft Fails on Pass Chips

2006 ◽  
Author(s):  
I. Österreicher ◽  
S. Eckl ◽  
B. Tippelt ◽  
S. Döring ◽  
R. Prang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Photon Emission ◽  
Complete Analysis ◽  
Functional Tests ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Current Consumption ◽  
Emission Microscopy ◽  
Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

Introduction of Spectral Mapping through Transmission Grating, Derivative Technique of Photon Emission

2014 ◽  
Author(s):  
Thierry Parrassin ◽  
Sylvain Dudit ◽  
Michel Vallet ◽  
Antoine Reverdy ◽  
Hervé Deslandes
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Light Emission ◽  
Photon Emission ◽  
Optical Path ◽  
Spectral Mapping ◽  
Additional Information ◽  
Transmission Grating ◽  
Emission System ◽  
Advance Knowledge

Abstract By adding a transmission grating into the optical path of our photon emission system and after calibration, we have completed several failure analysis case studies. In some cases, additional information on the emission sites is provided, as well as understanding of the behavior of transistors that are associated to the fail site. The main application of the setup is used for finding and differentiating easily related emission spots without advance knowledge in light emission mechanisms in integrated circuits.

Contributions of a Formal Analysis Metaprocess to Breakthrough Failure Analysis Results

2003 ◽  
Author(s):  
Steve Ferrier ◽  
Kevin D. Martin ◽  
Donald Schulte
Keyword(s):  
Failure Analysis ◽  
Formal Analysis ◽  
Photon Emission ◽  
Flow Analysis ◽  
Formal Structure ◽  
Ic Design ◽  
Analysis Process ◽  
Secondary Failure ◽  
Leakage Failure ◽  
Wafer Manufacturing

Abstract Application of a formal Failure Analysis metaprocess to a stubborn yield loss problem provided a framework that ultimately facilitated a solution. Absence of results from conventional failure analysis techniques such as PEM (Photon Emission Microscopy) and liquid crystal microthermography frustrated early attempts to analyze this low-level supply leakage failure mode. Subsequently, a reorganized analysis team attacked the problem using a specific toplevel metaprocess.(1,a) Using the metaprocess, analysts generated a specific unique step-by-step analysis process in real time. Along the way, this approach encouraged the creative identification of secondary failure effects that provided repeated breakthroughs in the analysis flow. Analysis proceeded steadily toward the failure cause in spite of its character as a three-way interaction among factors in the IC design, mask generation, and wafer manufacturing processes. The metaprocess also provided the formal structure that, at the conclusion of the analysis, permitted a one-sheet summary of the failure's cause-effect relationships and the analysis flow leading to discovery of the anomaly. As with every application of this metaprocess, the resulting analysis flow simply represented an effective version of good failure analysis. The formal and flexible codification of the analysis decision-making process, however, provided several specific benefits, not least of which was the ability to proceed with high confidence that the problem could and would be solved. This paper describes the application of the metaprocess, and also the key measurements and causeeffect relationships in the analysis.

Application of Advanced Back-Side Optical Techniques in ASICs

2013 ◽  
Vol 21 (3) ◽  
pp. 30-35
Author(s):  
Douglas Martin ◽  
Samuel Beilin ◽  
Brett Hamilton ◽  
Darin York ◽  
Philip Baker ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Photon Emission ◽  
Back Side ◽  
Voltage Imaging ◽  
Root Cause ◽  
Silicon Transistors ◽  
Cause Of Failure ◽  
Metal Interconnects ◽  
Application Specific

Failure analysis is important in determining root cause for appropriate corrective action. In order to perform failure analysis of microelectronic application-specific integrated circuits (ASICs) delidding the device is often required. However, determining root cause from the front side is not always possible due to shadowing effects caused by the ASIC metal interconnects. Therefore, back-side polishing is used to reveal an unobstructed view of the ASIC silicon transistors. This paper details how back-side polishing in conjunction with laser-scanned imaging (LSI), laser voltage imaging (LVI), laser voltage probing (LVP), photon emission microscopy (PEM), and laser-assisted device alterations (LADA) were used to uncover the root cause of failure of two ASICs.

Failure Analysis Methodology on Resistive Open Defects

2014 ◽  
Author(s):  
A.C.T. Quah ◽  
G.B. Ang ◽  
D. Nagalingam ◽  
C.Q. Chen ◽  
H.P. Ng ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Photon Emission ◽  
Analysis Methodology ◽  
Failure Path ◽  
Open Defect ◽  
Emission Microscopy ◽  
Open Defects ◽  
Logic Array ◽  
Failure Site

Abstract This paper describes the observation of photoemissions from saturated transistors along a connecting path with open defect in the logic array. By exploiting this characteristic phenomenon to distinguish open related issues, we described with 2 case studies using Photon Emission Microscopy, CAD navigation and layout tracing to identify the ‘open’ failure path. Further layout and EBAC analysis are then employed to effectively localize the failure site.

Identification of an IDDQ Failure Mechanism Using a Variety of Front and Backside Analytical Techniques

2003 ◽  
Author(s):  
Jim Shearer ◽  
Kim Le ◽  
Xiaoyu Yang ◽  
Monty Cleeves ◽  
Al Meeks
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Metal Layer ◽  
Ion Beam ◽  
Photon Emission ◽  
Analytical Techniques ◽  
Cmos Process ◽  
Microscopy Imaging ◽  
Leakage Path ◽  
Dual Beam

Abstract This article presents a case study to solve an IDDQ leakage problem using a variety of failure analysis techniques on a product. The product is fabricated using a 3-metal-layer 0.25 μm CMOS process with the addition of Matrix's proprietary 3-D memory layers. The failure analysis used both top and backside analytical techniques, including liquid crystal, photon emission microscopy from both front and back, dual-beam focused ion beam cross-sectioning, field emission scanning electron microscopy imaging, parallel-lap/passive voltage contrast, microprobing of parallel-lapped samples, and scanning capacitance microscopy. The article discusses how the application of each of the techniques narrowed down the search for this IDDQ leakage path. This leakage path was eliminated using the two corrective actions: The resist is pre-treated prior to ion implantation to produce a consistent resist sidewall profile; and the Nwell boundaries were adjusted in the next Nwell mask revision.

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