Identification of an IDDQ Failure Mechanism Using a Variety of Front and Backside Analytical Techniques

2003 ◽  
Author(s):  
Jim Shearer ◽  
Kim Le ◽  
Xiaoyu Yang ◽  
Monty Cleeves ◽  
Al Meeks
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Metal Layer ◽  
Ion Beam ◽  
Photon Emission ◽  
Analytical Techniques ◽  
Cmos Process ◽  
Microscopy Imaging ◽  
Leakage Path ◽  
Dual Beam

Abstract This article presents a case study to solve an IDDQ leakage problem using a variety of failure analysis techniques on a product. The product is fabricated using a 3-metal-layer 0.25 μm CMOS process with the addition of Matrix's proprietary 3-D memory layers. The failure analysis used both top and backside analytical techniques, including liquid crystal, photon emission microscopy from both front and back, dual-beam focused ion beam cross-sectioning, field emission scanning electron microscopy imaging, parallel-lap/passive voltage contrast, microprobing of parallel-lapped samples, and scanning capacitance microscopy. The article discusses how the application of each of the techniques narrowed down the search for this IDDQ leakage path. This leakage path was eliminated using the two corrective actions: The resist is pre-treated prior to ion implantation to produce a consistent resist sidewall profile; and the Nwell boundaries were adjusted in the next Nwell mask revision.

Failure Analysis Work Flow for Electrical Shorts in Triple Stacked 3D TSV Daisy Chains

2015 ◽  
Vol 2015 (1) ◽  
pp. 000469-000473 ◽  
Author(s):  
J. Gaudestad ◽  
A. Orozco ◽  
I. De Wolf ◽  
T. Wang ◽  
T. Webers ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Root Cause ◽  
Current Path ◽  
Dual Beam ◽  
Resolution Imaging ◽  
Magnetic Field Imaging ◽  
Non Destructive

In this paper we show an efficient workflow that combines Magnetic Field Imaging (MFI) and Dual Beam Plasma Focused Ion Beam (DB-PFIB) for fast and efficient Fault Isolation and root cause analysis in 2.5/3D devices. The work proves MFI is the best method for Electric Fault Isolation (EFI) of short failures in 2.5/3D Through Silicon Via (TSV) triple stacked devices in a true non-destructive way by imaging the current path. To confirm the failing locations and to do Physical Failure Analysis (PFA), a DB-PFIB system was used for cross sectioning and volume analysis of the TSV structures and high resolution imaging of the identified defects. With a DB-PFIB, the fault is exposed and analyzed without any sample prep artifacts seen in mechanical polishing or laser preparation techniques and done in a considerably shorter amount of time than that required when using a traditional Gallium Focused Ion Beam (FIB).

Studies of Buried Voids Capturing with e-Beam Inspection System and Confirmation with Physical Failure Analysis

2012 ◽  
Author(s):  
Hong Xiao ◽  
Ximan Jiang
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Energetic Electron ◽  
Optical Microscope ◽  
Inspection System ◽  
Dual Beam

Abstract In this paper, a novel inspection mode of electron beam inspection (EBI) that can effectively detect buried voids in tungsten (W) plugs is reported for the first time. Buried voids in metal are a defect of interest (DOI) that cannot be captured by either optical inspection or traditional EBI modes. The detection of buried voids is achieved by using energetic electron beam (e-beam) with energy high enough to penetrate into metal and reach the buried void. By selecting desired secondary electrons to form the inspection images, strong contrast between the defective tungsten plugs and normal ones can be achieved. Failure analysis was performed on the DOI that is unique to this new EBI mode. After optical microscope locating and laser marking, we successfully recaptured DOI with scanning electron microscope (SEM) and capped the DOI with e-beam assisted platinum (Pt) deposition. Later a dual-beam focused ion beam (FIB) system was used to re-locate the Pt-capped DOI and prepare samples for transmission electron microscope (TEM). TEM images confirmed the unique DOI were buried voids in the metal plugs, which could affect resistance of interconnect in integrated circuit (IC) chip and impact the IC yield.

Failure Analysis of Flip Chip C4 Package Using Focused Ion Beam Milling Technique

2011 ◽  
Author(s):  
Lihong Cao ◽  
Loc Tran ◽  
Wallace Donna
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Sections ◽  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Failure Mechanisms ◽  
Organic Substrate ◽  
Dual Beam ◽  
Preparation Techniques

Abstract This article describes how Focused Ion Beam (FIB) milling methodology enhances the capability of package-level failure analysis on flip-chip packages by eliminating the artifacts induced by using conventional mechanical techniques. Dual- Beam Focused Ion Beam (DB FIB) cross sections were successful in detecting failure mechanisms related either to the die/C4 bump or package defect inside the organic substrate. This paper outlines detailed sample preparation techniques prior to performing the DB FIB cross-sections, along with case studies of DB FIB cross-sections.

Identification and Analysis of Parasitic Depletion Mode Leakage in a Memory Select Transistor

2000 ◽  
Author(s):  
Jim B. Colvin ◽  
Anirban Roy
Keyword(s):  
Failure Analysis ◽  
Spatial Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Contact ◽  
Electrical Behavior ◽  
Embedded Memory ◽  
Electrical Parameters ◽  
Leakage Path ◽  
Field Oxide

Abstract Low yield was reported for a non-volatile embedded memory array. In one case, the n-channel transistor was observed to exhibit single bit OFF leakage in a 32K array. In another case, there was general leakage observed between drain junctions of neighboring transistors, even though these were isolated by field oxide. The objective of the failure analysis described in this article was to characterize the electrical behavior of the leakage and determine the exact location and cause of the leakage. Focused Ion Beam was used to make electrical contact to drain regions, which lacked a contact for microprobing. Once the electrical parameters were obtained, photoemission analysis was performed with modified probes for higher spatial resolution to pinpoint the leakage path. Finally, scanning capacitance microscopy methods were used to prove the presence of the n-type depletion path. Very clear and positive confirmation of the presence of the parasitic n-type dopant was confirmed.

scholarly journals Failure Analysis of a Half-Micron CMOS IC Technology

1996 ◽  
Author(s):  
A.Y. Liang ◽  
P. Tangyunyong ◽  
R.S. Bennett ◽  
R.S. Flores ◽  
J.M. Soden ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Photon Emission ◽  
Deposition Process ◽  
Cmos Technology ◽  
Contrast Imaging ◽  
Wafer Processing ◽  
Voltage Contrast ◽  
Tools And Techniques

Abstract We present the results of recent failure analysis of an advanced, 0.5 um, fully planarized, triple metallization CMOS technology. A variety of failure analysis (FA) tools and techniques were used to localize and identify defects generated by wafer processing. These include light (photon) emission microscopy (LE), fluorescent microthermal imaging (FMI), focused ion beam cross sectioning, SEM/voltage contrast imaging, resistive contrast imaging (RCI), and e-beam testing using an IDS-5000 with an HP 82000. The defects identified included inter- and intra-metal shorts, gate oxide shorts due to plasma processing damage, and high contact resistance due to the contact etch and deposition process. Root causes of these defects were determined and corrective action was taken to improve yield and reliability.

Defect Localization and Root Cause Analysis on e-Fuse Read Reliability Failure

2014 ◽  
Author(s):  
Hung Chin Chen ◽  
Chih Yang Tsai ◽  
Shih Yuan Liu ◽  
Yu Pang Chang ◽  
Jian Chang Lin
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Metal Layer ◽  
Ion Beam ◽  
Fault Isolation ◽  
Resistance Change ◽  
Cause Analysis ◽  
Root Cause ◽  
Failure Location ◽  
Rate Of Failure

Abstract Fault isolation is the most important step for Failure Analysis (FA), and it is closely linked with the success rate of failure mechanism finding. In this paper, we will introduce a case that hard to debug with traditional FA skills. In order to find out its root cause, several advanced techniques such as layout tracing, circuit edit and Infrared Ray–Optical Beam Induced Resistance Change (IR-OBIRCH) analysis had been applied. The circuit edit was performed following layout tracing for depositing probing pads by Focused Ion Beam (FIB). Then, IR-OBIRCH analysis with biasing on the two FIB deposited probing pads and a failure location was detected. Finally, the root cause of inter- metal layer bridge was found in subsequent physical failure analysis.

Analysis of DC Failure in Advanced Memory Devices Using Nanoprobing and Scanning Capacitance Microscopy

2007 ◽  
Author(s):  
Jen-Lang Lue ◽  
Chin-Shun Lin ◽  
Atup Chiou ◽  
Hsuen-Cheng Liao ◽  
Hsienwen Liu ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Doping Profile ◽  
Memory Devices ◽  
Cross Sectional ◽  
Analysis Process ◽  
Leakage Path ◽  
Current Voltage

Abstract This paper discusses the failure analysis process of a DC failure using an in-FIB (Focused Ion Beam) nanoprobing technique with four probes and a scanning capacitance microscope (SCM) in advanced DRAM devices. Current-Voltage (I-V) curves measured by the nanoprobing technique indicate the curve of the failed device is different from that of the normal device. The failed device causes a high leakage current in the test. The cross-sectional 2-D doping profile of SCM verifies the region of the P-Well has shifted to create a leakage path that causes this failure.

Failure Analysis Work Flow for Electrical Shorts in Triple Stacked 3D TSV Daisy Chains

2014 ◽  
Author(s):  
J. Gaudestad ◽  
A. Orozco ◽  
I. De Wolf ◽  
T. Wang ◽  
T. Webers ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Root Cause ◽  
Current Path ◽  
Dual Beam ◽  
Resolution Imaging ◽  
Magnetic Field Imaging ◽  
Non Destructive

Abstract In this paper we show an efficient workflow that combines Magnetic Field Imaging (MFI) and Dual Beam Plasma Focused Ion Beam (DB-PFIB) for fast and efficient Fault Isolation and root cause analysis in 2.5/3D devices. The work proves MFI is the best method for Electric Fault Isolation (EFI) of short failures in 2.5/3D Through Silicon Via (TSV) triple stacked devices in a true non-destructive way by imaging the current path. To confirm the failing locations and to do Physical Failure Analysis (PFA), a DB-PFIB system was used for cross sectioning and volume analysis of the TSV structures and high resolution imaging of the identified defects. With a DB-PFIB, the fault is exposed and analyzed without any sample prep artifacts seen in mechanical polishing or laser preparation techniques and done in a considerably shorter amount of time than that required when using a traditional Gallium Focused Ion Beam (FIB).

Direct Plan View FIB Liftout for Near-Surface Defect Analysis in TEM

2013 ◽  
Author(s):  
Max L. Lifson ◽  
Carla M. Chapman ◽  
D. Philip Pokrinchak ◽  
Phyllis J. Campbell ◽  
Greg S. Chrisman ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Silicon Germanium ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Misfit Dislocations ◽  
Tem Analysis ◽  
Plan View ◽  
Near Surface ◽  
Straightforward Method

Abstract Plan view TEM imaging is a powerful technique for failure analysis and semiconductor process characterization. Sample preparation for near-surface defects requires additional care, as the surface of the sample needs to be protected to avoid unintentionally induced damage. This paper demonstrates a straightforward method to create plan view samples in a dual beam focused ion beam (FIB) for TEM studies of near-surface defects, such as misfit dislocations in heteroepitaxial growths. Results show that misfit dislocations are easily imaged in bright-field TEM and STEM for silicon-germanium epitaxial growth. Since FIB tools are ubiquitous in semiconductor failure analysis labs today, the plan view method presented provides a quick to implement, fast, consistent, and straightforward method of generating samples for TEM analysis. While this technique has been optimized for near-surface defects, it can be used with any application requiring plan view TEM analysis.

Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS

2010 ◽  
Author(s):  
Zixiao Pan ◽  
Wei Wei ◽  
Fuhe Li
Keyword(s):  
Failure Analysis ◽  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Detection Sensitivity ◽  
Chemical Contamination ◽  
Inductively Coupled ◽  
Minimal Sample ◽  
Icp Ms

Abstract This paper introduces our effort in failure analysis of a 200 nm thick metal interconnection on a glass substrate and covered with a passivation layer. Structural damage in localized areas of the metal interconnections was observed with the aid of focused ion beam (FIB) cross-sectioning. Laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS) was then applied to the problematic areas on the interconnection for chemical survey. LA ICP-MS showed direct evidence of localized chemical contamination, which has likely led to corrosion (or over-etching) of the metal interconnection and the assembly failure. Due to the high detection sensitivity of LA ICP-MS and its compatibility with insulating material analysis, minimal sample preparation is required. As a result, the combination of FIB and LA ICP-MS enabled successful meso-scale failure analysis with fast turnaround and reasonable cost.

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