scholarly journals Mechanical Stress Stability of Flexible Amorphous Zinc Tin Oxide Thin-Film Transistors

2021 ◽  
Vol 2 ◽  
Author(s):  
Oliver Lahr ◽  
Max Steudel ◽  
Holger von Wenckstern ◽  
Marius Grundmann

Due to their low-temperature processing capability and ionic bonding configuration, amorphous oxide semiconductors (AOS) are well suited for applications within future mechanically flexible electronics. Over the past couple of years, amorphous zinc tin oxide (ZTO) has been proposed as indium and gallium-free and thus more sustainable alternative to the widely deployed indium gallium zinc oxide (IGZO). The present study specifically focuses on the strain-dependence of elastic and electrical properties of amorphous zinc tin oxide thin-films sputtered at room temperature. Corresponding MESFETs have been compared regarding their operation stability under mechanical bending for radii ranging from 5 to 2 mm. Force-spectroscopic measurements yield a plastic deformation of ZTO as soon as the bending-induced strain exceeds 0.83 %. However, the electrical properties of ZTO determined by Hall effect measurements at room temperature are demonstrated to be unaffected by residual compressive and tensile strain up to 1.24 %. Even for the maximum investigated tensile strain of 1.26 %, the MESFETs exhibit a reasonably consistent performance in terms of current on/off ratios between six and seven orders of magnitude, a subthreshold swing around 350 mV/dec and a field-effect mobility as high as 7.5 cm2V−1s−1. Upon gradually subjecting the transistors to higher tensile strain, the channel conductivity steadily improves and consequently, the field-effect mobility increases by nearly 80 % while bending the devices around a radius of 2 mm. Further, a reversible threshold voltage shift of about −150 mV with increasing strain is observable. Overall, amorphous ZTO provides reasonably stable electrical properties and device performance for bending-induced tensile strain up to at least 1.26 % and thus represent a promising material of choice considering novel bendable and transparent electronics.

2018 ◽  
Vol 4 (7) ◽  
pp. 1800032 ◽  
Author(s):  
Cristina Fernandes ◽  
Ana Santa ◽  
Ângelo Santos ◽  
Pydi Bahubalindruni ◽  
Jonas Deuermeier ◽  
...  

2013 ◽  
Vol 46 (47) ◽  
pp. 475106 ◽  
Author(s):  
Myeong Gu Yun ◽  
So Hee Kim ◽  
Cheol Hyoun Ahn ◽  
Sung Woon Cho ◽  
Hyung Koun Cho

2013 ◽  
Vol 25 (21) ◽  
pp. 2994-3000 ◽  
Author(s):  
Keon-Hee Lim ◽  
Kyongjun Kim ◽  
Seonjo Kim ◽  
Si Yun Park ◽  
Hyungjun Kim ◽  
...  

2015 ◽  
Vol 15 (10) ◽  
pp. 7606-7610 ◽  
Author(s):  
Dongsuk Han ◽  
Jaehyung Park ◽  
Minsoo Kang ◽  
Hyeongtag Jeon ◽  
Jongwan Park

We investigated the performance of tin oxide thin film transistors (TFTs) using DC magnetron sputtering. A remarkable improvement in the transfer characteristics was obtained for the Hf-doped tin oxide (HTO) TFT. We also developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors and investigated the effects of hafnium doping on the electrical characteristics of the HTO TFTs. Doping with hafnium resulted in a reduced defect density in the tin oxide channel layer related to oxygen vacancies, which may result from increased field effect mobility. Zinc atoms have relatively higher oxidation potential compared to tin atoms, so more oxygen molecules can be absorbed and more electrons are trapped in the HZTO films. The HZTO TFTs exhibited good electrical characteristics with a field effect mobility of 10.98 cm2/Vs, and a high ION/IOFF ratio over 108.


2011 ◽  
Vol 14 (9) ◽  
pp. H354 ◽  
Author(s):  
Sang Jun Oh ◽  
Chul Jong Han ◽  
Ji Wan Kim ◽  
Yong-Hoon Kim ◽  
Sung Kyu Park ◽  
...  

2004 ◽  
Vol 811 ◽  
Author(s):  
E. Fortunato ◽  
P. Barquinha ◽  
A. Pimentel ◽  
A. Gonçalves ◽  
L. Pereira ◽  
...  

ABSTRACTWe report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm2/Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.


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