scholarly journals Warpage Behavior on Silicon Semiconductor Device: The Impact of Thick Copper Metallization

2021 ◽  
Vol 11 (11) ◽  
pp. 5140
Author(s):  
Michele Calabretta ◽  
Alessandro Sitta ◽  
Salvatore Massimo Oliveri ◽  
Gaetano Sequenzia
Keyword(s):  
Semiconductor Device ◽  
Semiconductor Industry ◽  
Technological Factor ◽  
Element Model ◽  
Annealing Process ◽  
Copper Layer ◽  
Analytical Models ◽  
Copper Metallization ◽  
Physical Analysis ◽  
The Impact

Electrochemical deposited (ECD) thick film copper on silicon substrate is one of the most challenging technological brick for semiconductor industry representing a relevant improvement from the state of art because of its excellent electrical and thermal conductivity compared with traditional materials, such as aluminum. The main technological factor that makes challenging the industrial implementation of thick copper layer is the severe wafer warpage induced by Cu annealing process, which negatively impacts the wafer manufacturability. The aim of presented work is the understanding of warpage variation during annealing process of ECD thick (20 μm) copper layer. Warpage is experimentally characterized at different temperature by means of Phase-Shift Moiré principle, according to different annealing profiles. Physical analysis is employed to correlated the macroscopic warpage behavior with microstructure modification. A linear Finite Element Model (FEM) is developed to predict the geometrically stress-curvature relation, comparing results with analytical models.

scholarly journals Analysis of Warpage Induced by Thick Copper Metal on Semiconductor Device

2021 ◽  
pp. 55-60
Author(s):  
Michele Calabretta ◽  
Alessandro Sitta ◽  
Salvatore Massimo Oliveri ◽  
Gaetano Sequenzia
Keyword(s):  
Thermal Conductivity ◽  
Semiconductor Device ◽  
Semiconductor Industry ◽  
Technological Factor ◽  
Element Model ◽  
Annealing Process ◽  
Copper Layer ◽  
Analytical Models ◽  
Linear Finite Element ◽  
State Of Art

AbstractElectrochemical deposited (ECD) thick film copper on silicon substrate is one of the most challenging technological brick for semiconductor industry representing a relevant improvement from the state of art because of its excellent electrical and thermal conductivity compared with traditional compound such as aluminum. The main technological factor that makes challenging the industrial implementation of thick copper layer is the severe wafer warpage induced by Cu annealing process, which negatively impacts the wafer manufacturability. The aim of presented work is the understanding of warpage variation during annealing process of ECD thick (~20 µm) copper layer. Warpage has been experimental characterized at different temperature by means of Phase-Shift Moiré principle, according to different annealing profiles. A linear Finite Element Model (FEM) has been developed to predict the geometrically stress-curvature relation, comparing results with analytical models.

Novel Wet Chemical Copper Metallization for Glass Interposers

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001535-001554
Author(s):  
Simon Bamberg ◽  
Ralf Bruening ◽  
Johannes Etzkorn ◽  
Frank Bruening
Keyword(s):  
Manufacturing Industry ◽  
Copper Layer ◽  
Inorganic Materials ◽  
Copper Metallization ◽  
Organic Substrates ◽  
Copper Plating ◽  
Electrolytic Copper ◽  
Electroless Copper ◽  
Wet Chemical ◽  
The Impact

The focus of the chip and IC substrate manufacturing industry for interposers is currently shifting from organic substrates to inorganic materials. Interposers overcome the dimensional mismatch between a die and an organic PWB substrate and need to buffer the differences in thermal expansion between these two materials. While inorganics like silicon and glass, have a low CTE value compared to organic material, glass has some significant advantages over silicon. These are namely material cost, availability in panel size and a better electrical insulation. In order to further increase the cost advantage, metallization could be done by either electroless or electrolytic copper plating as an alternative route to sputter technology. Both wet chemical processes are well established in PWB manufacturing and need adaptation to glass substrates. Compared to sputtering, 3D-features can be covered with a wet chemical treatment in a comparatively economical process. Filling of TGVs (Through Glass Vias) by electrolytic copper plating requires the presence of a conductive film which is created by applying electroless copper deposition of typically 300–500nm thickness. The general issue is poor adhesion to the smooth glass surfaces. To improve adhesion between glass and metal, various treatments were assessed in this study: Mechanical anchoring was achieved by etching the substrate (subtractive) as well as by depositing nano-sized silica particles (additive). Both treatments are in solution and 3D-features are accessible in contrast to a purely mechanical approach. Surface treatments without inducing additional roughness included the adsorption of functional metal-affine polyelectrolytes and silanization for conditioning which enhanced the adhesion of the copper layer to various degrees. To study the impact of chemical formulation on strain/stress development and relaxation in the film as a key impact factor for blister (adhesion) performance, the electroless copper layer growth was monitored by in-situ XRD methods during and after deposition.

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Design of spline surface vacuum gripper for pick and place robotic arms

2020 ◽  
Vol 4 (2) ◽  
pp. 48-55
Author(s):  
A. S. Jamaludin ◽  
M. N. M. Razali ◽  
N. Jasman ◽  
A. N. A. Ghafar ◽  
M. A. Hadi
Keyword(s):  
Cycle Time ◽  
Industrial Robot ◽  
Annealing Process ◽  
Vacuum Suction ◽  
Robotic Arms ◽  
Custom Made ◽  
Pick And Place ◽  
Manufacturing Procedure ◽  
Production Flexibility ◽  
The Impact

The gripper is the most important part in an industrial robot. It is related with the environment around the robot. Today, the industrial robot grippers have to be tuned and custom made for each application by engineers, by searching to get the desired repeatability and behaviour. Vacuum suction is one of the grippers in Watch Case Press Production (WCPP) and a mechanism to improve the efficiency of the manufacturing procedure. Pick and place are the important process for the annealing process. Thus, by implementing vacuum suction gripper, the process of pick and place can be improved. The purpose of vacuum gripper other than design vacuum suction mechanism is to compare the effectiveness of vacuum suction gripper with the conventional pick and place gripper. Vacuum suction gripper is a mechanism to transport part and which later sequencing, eliminating and reducing the activities required to complete the process. Throughout this study, the process pick and place became more effective, the impact on the production of annealing process is faster. The vacuum suction gripper can pick all part at the production which will lower the loss of the productivity. In conclusion, vacuum suction gripper reduces the cycle time about 20%. Vacuum suction gripper can help lower the cycle time of a machine and allow more frequent process in order to increase the production flexibility.

Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

2006 ◽  
Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting
Keyword(s):  
Copper Metallization ◽  
Physical Analysis ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Data Retention ◽  
Simulation Data ◽  
Failure Data ◽  
Dual Gate ◽  
Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

Evaluation of Hydraulic Fracturing Models and Their Limitations to Predict No-Drill Zones for Horizontal Directional Drilling

2018 ◽  
Author(s):  
Saeed Delara ◽  
Kendra MacKay
Keyword(s):  
Hydraulic Fracturing ◽  
Safety Factor ◽  
Standard Procedure ◽  
Accurate Determination ◽  
Strength Properties ◽  
Analytical Models ◽  
Alternative Methods ◽  
Directional Drilling ◽  
Horizontal Directional Drilling ◽  
The Impact

Horizontal directional drilling (HDD) has become the preferred method for trenchless pipeline installations. Drilling pressures must be limited and a “no-drill zone” determined to avoid exceeding the strength of surrounding soil and rock. The currently accepted industry method of calculating hydraulic fracturing limiting pressure with application of an arbitrary safety factor contains several assumptions that are often not applicable to specific ground conditions. There is also no standard procedure for safety factor determination, resulting in detrimental impacts on drilling operations. This paper provides an analysis of the standard methods and proposes two alternative analytical models to more accurately determine the hydraulic fracture point and acceptable drilling pressure. These alternative methods provide greater understanding of the interaction between the drilling pressures and the surrounding ground strength properties. This allows for more accurate determination of horizontal directional drilling limitations. A comparison is presented to determine the differences in characteristics and assumptions for each model. The impact of specific soil properties and factors is investigated by means of a sensitivity analysis to determine the most critical soil information for each model.

Investigation on the shaft voltage generation of large synchronous turboalternators

2020 ◽  
Vol 39 (5) ◽  
pp. 1145-1156
Author(s):  
Kevin Darques ◽  
Abdelmounaïm Tounzi ◽  
Yvonnick Le-menach ◽  
Karim Beddek
Keyword(s):  
Finite Element ◽  
Design Methodology ◽  
Short Circuit ◽  
Element Model ◽  
Stator Winding ◽  
Content Type ◽  
Voltage Generation ◽  
The Impact ◽  
Investigation Process ◽  
Circulating Currents

Purpose This paper aims to go deeper on the analysis of the shaft voltage of large turbogenerators. The main interest of this study is the investigation process developed. Design/methodology/approach The analysis of the shaft voltage because of several defects is based on a two-dimensional (2D) finite element modeling. This 2D finite element model is used to determine the shaft voltage because of eccentricities or rotor short-circuit. Findings Dynamic eccentricities and rotor short circuit do not have an inherent impact on the shaft voltage. Circulating currents in the stator winding because of defects impact the shaft voltage. Originality/value The original value of this paper is the investigation process developed. This study proposes to quantify the impact of a smooth stator and then to explore the contribution of the real stator winding on the shaft voltage.

scholarly journals Structural and Acoustic Responses of a Submerged Stiffened Conical Shell

2014 ◽  
Vol 2014 ◽  
pp. 1-14 ◽  
Author(s):  
Meixia Chen ◽  
Cong Zhang ◽  
Xiangfan Tao ◽  
Naiqi Deng
Keyword(s):  
Conical Shell ◽  
Element Model ◽  
Analytical Models ◽  
Superposition Method ◽  
Far Field ◽  
Fluid Loading ◽  
Low Frequencies ◽  
Structural Responses ◽  
The Individual ◽  
Field Sound

This paper studies the vibrational behavior and far-field sound radiation of a submerged stiffened conical shell at low frequencies. The solution for the dynamic response of the conical shell is presented in the form of a power series. A smeared approach is used to model the ring stiffeners. Fluid loading is taken into account by dividing the conical shell into narrow strips which are considered to be local cylindrical shells. The far-field sound pressure is solved by the Element Radiation Superposition Method. Excitations in two directions are considered to simulate the loading on the surface of the conical shell. These excitations are applied along the generator and normal to the surface of the conical shell. The contributions from the individual circumferential modes on the structural responses of the conical shell are studied. The effects of the external fluid loading and stiffeners are discussed. The results from the analytical models are validated by numerical results from a fully coupled finite element/boundary element model.

High Performance MEMS Thermal Gyroscope

2012 ◽  
Author(s):  
Nilgoon Zarei ◽  
Albert M. Leung ◽  
John D. Jones
Keyword(s):  
External Force ◽  
High Performance ◽  
Gas Flow ◽  
Element Model ◽  
Minimal Impact ◽  
Mems Gyroscope ◽  
Force Finding ◽  
Dimensional Finite Element ◽  
To Come ◽  
The Impact

This paper reports modeling a new design of Thermal MEMS gyroscope through the use of the Comsol Multiphysics software package. Being very small and having no movable parts have made thermal MEMS gyroscope very practical. Previously designed Thermal MEMS gyroscope shows some limitation such as being vulnerable to gravity force. Finding a technique to increase the range of thermal MEMS gyroscope reliability motivated us to come up with a new design that we will refer to as the ‘Forced Convection MEMS gyroscope’. A two-dimensional finite-element model of the device has been developed to investigate its performance. An external force has been introduced to the system to create a higher-velocity hot gas stream that will be deviated more in response to rotation. The external force should be great enough that convection currents resulting from gravity or acceleration will have minimal impact on the gyroscope sensitivity. A heating element can still be used, but its primary purpose is now to warm the flowing gas so that it can be detected by the sensors. In this paper we will also show that, in order to completely eliminate the impact of gravity and increase the sensitivity of the gyroscope, it is possible to eliminate the heaters entirely and instead use heated sensors to detect gas currents. In other words, the sensors are working as hot-wire anemometers. Our simulations suggest that this design variant results in higher sensitivity. We have also carried out optimization studies to identify the best location for the heaters and sensors. A prototype of this device has been fabricated based on MEMS techniques, and an external pump is used to produce an oscillating gas flow within the device.

Sign in / Sign up

Export Citation Format

Share Document