scholarly journals Terahertz Photoconductive Antenna Based on a Topological Insulator Nanofilm

2021 ◽  
Vol 11 (12) ◽  
pp. 5580
Author(s):  
Kirill A. Kuznetsov ◽  
Daniil A. Safronenkov ◽  
Petr I. Kuznetsov ◽  
Galiya Kh. Kitaeva
Keyword(s):  
Topological Insulator ◽  
Terahertz Radiation ◽  
Photoconductive Antenna ◽  
Island Film ◽  
Terahertz Waves ◽  
Efficient Generation ◽  
Current Voltage ◽  
Order Of Magnitude ◽  
Current Voltage Characteristics ◽  
Dark Currents

In this study, the efficient generation of terahertz radiation by a dipole photoconductive antenna, based on a thin island film of a topological insulator, was experimentally demonstrated. The performance of the Bi1.9Sb0.1Te2Se antenna was shown to be no worse than those of a semiconductor photoconductive antenna, which is an order of magnitude thicker. The current–voltage characteristics were studied for the photo and dark currents in Bi1.9Sb0.1Te2Se. The possible mechanisms for generating terahertz waves were analyzed by comparing the characteristics of terahertz radiation of an electrically biased and unbiased topological insulator.

scholarly journals Термоэлектрические и мемристивные особенности структур Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- и Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag

2022 ◽  
Vol 56 (3) ◽  
pp. 370
Author(s):  
А. Папикян ◽  
С. Арутюнян ◽  
Н. Агамалян ◽  
Р. Овсепян ◽  
А. Хачатурова ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Single Layer ◽  
Vacuum Deposition ◽  
Thermal Vacuum ◽  
Thermal Vacuum Deposition ◽  
Current Voltage ◽  
Semiconductor Behavior ◽  
Order Of Magnitude ◽  
Current Voltage Characteristics ◽  
Unipolar Resistive Switching

Abstract Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The currentvoltage characteristics of the Sb2Te3 film exhibit memristive properties with unipolar resistive switching, whereas Sb2Te3/Sb2S3/Sb2Te3 can be considered as a memristor with a parallel connected capacitance.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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