scholarly journals Thickness-Dependent Photocatalysis of Ultra-Thin MoS2 Film for Visible-Light-Driven CO2 Reduction

Catalysts ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1295
Author(s):  
Yi-Fan Huang ◽  
Kuan-Wei Liao ◽  
Fariz Rifqi Zul Fahmi ◽  
Varad A. Modak ◽  
Shang-Hsuan Tsai ◽  
...  
Keyword(s):  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Co2 Reduction ◽  
Product Yield ◽  
Optimum Thickness ◽  
Thickness Optimization ◽  
Reduction Activity ◽  
Mos2 Film ◽  
Visible Light Driven ◽  
Metal Dichalcogenides

The thickness of transition metal dichalcogenides (TMDs) plays a key role in enhancing their photocatalytic CO2 reduction activity. However, the optimum thickness of the layered TMDs that is required to achieve sufficient light absorption and excellent crystallinity has still not been definitively determined. In this work, ultra-thin molybdenum disulfide films (MoS2TF) with 25 nm thickness presented remarkable photocatalytic activity, and the product yield increased by about 2.3 times. The photocatalytic mechanism corresponding to the TMDs’ thickness was also proposed. This work demonstrates that the thickness optimization of TMDs provides a cogent direction for the design of high-performance photocatalysts.

Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide

2021 ◽  
Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
High Performance ◽  
Film Growth ◽  
Transition Metal Dichalcogenides ◽  
Electronic Systems ◽  
Intrinsic Defects ◽  
Diethyl Sulfide ◽  
Metal Dichalcogenides

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

scholarly journals High-performance flexible nanoscale transistors based on transition metal dichalcogenides

2021 ◽  
Author(s):  
Alwin Daus ◽  
Sam Vaziri ◽  
Victoria Chen ◽  
Çağıl Köroğlu ◽  
Ryan W. Grady ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides ◽  
Nanoscale Transistors

scholarly journals Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Infrared Detector ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Electric Transport ◽  
Defect Engineering ◽  
Fast Switching ◽  
Metal Dichalcogenides ◽  
Poor Stability

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.

scholarly journals Recent progress in photodetectors based on low-dimensional nanomaterials

2018 ◽  
Vol 7 (5) ◽  
pp. 393-411 ◽  
Author(s):  
Zhenhui Li ◽  
Ke Xu ◽  
Fanan Wei
Keyword(s):  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
High Sensitivity ◽  
Chemical Doping ◽  
Future Directions ◽  
Broadband Absorption ◽  
Metal Dichalcogenides ◽  
Ir Detection ◽  
Low Dimensional ◽  
Bohr Exciton Radius

Abstract Photodetectors (PDs) have great potential in applications of imaging, telecommunication, and biological sensing. In this article, state-of-the-art achievements on typical low-dimensional nanostructured PDs and hybrid PDs are reviewed. In the 2D nanostructured PDs part, 2D transition metal dichalcogenides have a natural gap, which promise high sensitivity of photodetection. Graphene and black phosphorus can also stand for 2D nanostructured PDs due to their broadband absorption and tunable direct bandgap, respectively. In the 1D nanostructured PDs part, owing to its high photoconductive characteristic, ZnO nanowire film is a promising material for ultraviolet PDs. Carbon nanotubes show potential in infrared (IR) detection due to its unique physical properties. In the 0D nanostructured PDs part, lead sulfide has a small bandgap and large Bohr exciton radius, which collectively give it a wide spectral tunability in the IR. In the hybrid PDs part, electrical and chemical doping is applied to combine different nanomaterials to realize PDs with high performance. In each part, the present situation and major challenges are overviewed. Then, the evolutions of the methods to overcome these challenges and the tremendous research breakthroughs are demonstrated. At last, future directions that could improve the performance of PDs are discussed.

Tuning the catalytic functionality of transition metal dichalcogenides grown by chemical vapour deposition

2017 ◽  
Vol 5 (29) ◽  
pp. 14950-14968 ◽  
Author(s):  
Gi Woong Shim ◽  
Woonggi Hong ◽  
Sang Yoon Yang ◽  
Sung-Yool Choi
Keyword(s):  
Transition Metal ◽  
Chemical Vapour Deposition ◽  
High Performance ◽  
Vapour Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapour ◽  
Catalytic Systems ◽  
Metal Dichalcogenides

This review provides insights for the design of synthetic schemes and catalytic systems of CVD-grown functional TMDs for high performance HER applications.

scholarly journals Emerging technologies for high performance infrared detectors

Nanophotonics ◽  
2018 ◽  
Vol 7 (1) ◽  
pp. 169-197 ◽  
Author(s):  
Chee Leong Tan ◽  
Hooman Mohseni
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Night Vision ◽  
Optical Antennas ◽  
Antireflection Coatings ◽  
Semiconductor Superlattice ◽  
Metal Dichalcogenides ◽  
Low Dimensional ◽  
Defect Imaging

AbstractInfrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

scholarly journals Vertically oriented MoS2 nanosheets with vast exposed edges for enhanced electrocatalytic hydrogen evolution

2021 ◽  
Vol 245 ◽  
pp. 03019
Author(s):  
Meisheng Han ◽  
Jie Yu
Keyword(s):  
Hydrogen Evolution ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Structure Of Metal ◽  
Special Area ◽  
Metal Dichalcogenides ◽  
Complex Preparation ◽  
Catalytic Stability ◽  
Electrochemical Water Splitting ◽  
A Current

Molybdenum disulfide (MoS2), a typical two-dimensional transition metal dichalcogenides, is a promising candidate for electrochemical water splitting catalysis due to its ultrahigh special area and highly exposed active edge sites. The main challenges restricted the wider application for MoS2-based nanomaterials are the complex preparation process and the high overpotential. Here, we design a novel and facile sealed vessel to synthesize vertical oriented MoS2 nanosheets electrocatalyst with vast exposed edges. Benefiting from the unique vertically-oriented structural and compositional characteristics, the MoS2 nanosheets with 10-20 layers exhibits superior hydrogen evolution reaction (HER) performance with a small overpotential of 135.2 mV at a current density of 10 mA∙cm-2 and low Tafel slope of 82.5 mV∙dec-1 as well as extraordinary catalytic stability over 5000 cycles. Importantly, the sealed vessel reactor system may open up a versatile and potential synthetic way to construct various morphologies and structure of metal dichalcogenides for high-performance energy storage and conversions devices.

scholarly journals High hole mobility in physical vapour deposition-grown tellurium-based transistors

2021 ◽  
Vol 8 (8) ◽  
pp. 210554
Author(s):  
Lin Tao ◽  
Lixiang Han ◽  
Qian Yue ◽  
Bin Yao ◽  
Yujue Yang ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
Vapour Deposition ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Hole Mobility ◽  
Physical Vapour Deposition ◽  
Metal Dichalcogenides ◽  
P Type

Carrier mobility is one of most important figures of merit for materials that can determine to a large extent the corresponding device performances. So far, extensive efforts have been devoted to the mobility improvement of two-dimensional (2D) materials regarded as promising candidates to complement the conventional semiconductors. Graphene has amazing mobility but suffers from zero bandgap. Subsequently, 2D transition-metal dichalcogenides benefit from their sizable bandgap while the mobility is limited. Recently, the 2D elemental materials such as the representative black phosphorus can combine the high mobility with moderate bandgap; however the air-stability is a challenge. Here, we report air-stable tellurium flakes and wires using the facile and scalable physical vapour deposition (PVD) method. The prototype field-effect transistors were fabricated to exhibit high hole mobility up to 1485 cm 2 V −1 s −1 at room temperature and 3500 cm 2 V −1 s −1 at low temperature (2 K). This work can attract numerous attentions on this new emerging 2D tellurium and open up a new way for exploring high-performance optoelectronics based on the PVD-grown p-type tellurium.

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