Design, Application, and Verification of the Novel SEU Tolerant Abacus-Type Layouts

Radiation tolerance improvements for advanced technologies have attracted considerable interests in space application. In this paper, the single event upset (SEU) hardened double interlocked storage cell (DICE) D-type flip-flops (DFFs) with abacus-type time-delay cell are proposed and successfully implemented in our test chips. The layout structures of two kinds of abacus-type time-delay cells are illustrated, and their hardening effectiveness are verified by our simulations and heavy ion irradiations. The systematic heavy ion experimental results show that the applied abacus-type time-delay cells can reduce the SEU cross sections of DICE DFFs significantly, and even the SEU immune is observed for the full “0” data pattern. Besides, an apparent test mode dependency of the abacus-type hardened circuits is also observed. The results indicate that the nanoscale abacus structure may be suitable for space application in harsh radiation environment.

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SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Electronics ◽

10.3390/electronics8121531 ◽

2019 ◽

Vol 8 (12) ◽

pp. 1531 ◽

Cited By ~ 1

Author(s):

Chang Cai ◽

Shuai Gao ◽

Peixiong Zhao ◽

Jian Yu ◽

Kai Zhao ◽

...

Keyword(s):

Integrated Circuits ◽

Cross Sections ◽

Radiation Effects ◽

Large Scale ◽

Random Access ◽

Radiation Sensitivity ◽

Heavy Ion ◽

High Energy ◽

Radiation Environment ◽

Single Event

Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were ~3.5 nJ, and the SEU cross-sections were correlated positively to the laser’s energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.

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Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2013.2289745 ◽

2013 ◽

Vol 60 (6) ◽

pp. 4368-4373 ◽

Cited By ~ 28

Author(s):

N. J. Gaspard ◽

S. Jagannathan ◽

Z. J. Diggins ◽

M. P. King ◽

S-J. Wen ◽

...

Keyword(s):

Cross Sections ◽

Heavy Ion ◽

Single Event Upset ◽

Single Event ◽

Flip Flop ◽

Technology Scaling

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Evaluation of Heavy-Ion-Induced Single Event Upset Cross Sections of a 65-nm Thin BOX FD-SOI Flip-Flops Composed of Stacked Inverters

IEICE Transactions on Electronics ◽

10.1587/transele.2019cdp0007 ◽

2020 ◽

Vol E103.C (4) ◽

pp. 144-152

Author(s):

Kentaro KOJIMA ◽

Kodai YAMADA ◽

Jun FURUTA ◽

Kazutoshi KOBAYASHI

Keyword(s):

Cross Sections ◽

Heavy Ion ◽

Single Event Upset ◽

Single Event

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The cross sections for different channels in heavy ion nuclear reactions

Journal de Physique ◽

10.1051/jphys:019710032010700 ◽

1971 ◽

Vol 32 (1) ◽

pp. 7-9 ◽

Cited By ~ 21

Author(s):

J. Galin ◽

D. Guerreau ◽

M. Lefort ◽

X. Tarrago

Keyword(s):

Cross Sections ◽

Nuclear Reactions ◽

Heavy Ion ◽

The Cross

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Pulsed Laser Stimulation Coupled with Optical Failure Analysis Technique—A Methodology to Help Space Application Electrical Designers

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0025 ◽

2015 ◽

Author(s):

G. Bascoul ◽

K. Sanchez ◽

G. Perez ◽

F. Bezerra ◽

H. Chauvin

Keyword(s):

Heavy Ions ◽

Pulsed Laser ◽

Radiation Sensitivity ◽

Radiation Environment ◽

Physical Analysis ◽

Space Application ◽

Voltage Converter ◽

Industrial Laboratory ◽

Sensitivity Evaluation ◽

Analysis Technique

Abstract Pulsed laser for radiation sensitivity evaluation has become a common tool used in research and industrial laboratory. This paper aims to highlight an approach to understand weaknesses of a component under radiation environment using a short pulsed width laser beam coupled to thermography technique, heavy ions test inputs and physical analysis. This paper is based on a study of a PWM device embedded on voltage converter.

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A time delay dynamical model for outbreak of 2019-nCoV and the parameter identification

Journal of Inverse and Ill-Posed Problems ◽

10.1515/jiip-2020-0010 ◽

2020 ◽

Vol 28 (2) ◽

pp. 243-250 ◽

Cited By ~ 29

Author(s):

Yu Chen ◽

Jin Cheng ◽

Yu Jiang ◽

Keji Liu

Keyword(s):

Dynamical System ◽

Time Delay ◽

Parameter Identification ◽

Typical Feature ◽

The Novel ◽

Isolation Rate ◽

High Isolation ◽

The Government ◽

System With Time Delay ◽

Official Data

AbstractIn this paper, we propose a novel dynamical system with time delay to describe the outbreak of 2019-nCoV in China. One typical feature of this epidemic is that it can spread in the latent period, which can therefore be described by time delay process in the differential equations. The accumulated numbers of classified populations are employed as variables, which is consistent with the official data and facilitates the parameter identification. The numerical methods for the prediction of the outbreak of 2019-nCoV and parameter identification are provided, and the numerical results show that the novel dynamic system can well predict the outbreak trend so far. Based on the numerical simulations, we suggest that the transmission of individuals should be greatly controlled with high isolation rate by the government.

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A multi-octave microwave 6-bit true time delay with low amplitude and delay variation in 65 nm CMOS

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078721000477 ◽

2021 ◽

pp. 1-10

Author(s):

Yakov Gutkin ◽

Asher Madjar ◽

Emanuel Cohen

Keyword(s):

Time Delay ◽

Insertion Loss ◽

Impedance Matching ◽

Least Significant Bit ◽

Delay Cell ◽

True Time Delay ◽

Unit Cells ◽

True Time ◽

And Performance ◽

Low Amplitude

Abstract In this paper, we describe the design, layout, and performance of a 6-bit TTD (true time delay) chip operating over the entire band of 2–18 GHz. The 1.15 mm2 chip is implemented using TSMC foundry 65 nm technology. The least significant bit is 1 ps. The design is based on the concept of all-pass network with some modifications intended to reduce the number of unit cells. Thus, the first three bits are implemented in a single delay cell. A peaking buffer amplifier between bit 4 and bit 5 is used for impedance matching and partial compensation of the insertion loss slope. The rms delay error of the TTD is <1 ps over most of the frequency band and insertion loss is between 2.5 and 6.3 dB for all 64 states.

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