Design of Pentacene-Based Organic Field-Effect Transistor for Low-Frequency Operational Transconductance Amplifier

2020 ◽  
Vol 29 (11) ◽  
pp. 2050181
Author(s):  
Cross T. Asha Wise ◽  
G. R. Suresh ◽  
M. Palanivelen ◽  
S. Saraswathi
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Low Frequency ◽  
Oxide Semiconductor ◽  
Operational Transconductance Amplifier ◽  
Text Type ◽  
Transconductance Amplifier ◽  
Effect Transistor

Mounting electronics circuits on a plastic flexible substrate are pertinent for biosensing applications due to their resilient nature, minimal processing conditions, lightweight and low cost. Organic Field-Effect Transistors (OFET)-based amplifier for flexible biosensors have been proposed in this paper. To design flexible biosensing circuits, Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with Polycyclic Hydrocarbon is a suitable choice. It is a big challenge to build an organic circuit using graphene electrode due to its poor performance of [Formula: see text]-type OFET, therefore it is advisable to use Pentacene as [Formula: see text]- and [Formula: see text]-type Organic semiconductors. Pentacene being one among the foremost totally investigated conjugated organic molecules with a high application potential because the hole mobility in OFETs goes up to 0.2[Formula: see text]cm2/(Vs), which exceeds that of amorphous silicon. In biosignal process, the first and most important step is to amplify the biosignal for further processing. Operational Transconductance Amplifier (OTA) plays an essential role in biological signal measuring instruments like EEG, ECG, EMG modules which measure the heart, muscle and brain activities. The OTA designed using this OFET is adaptable for flexible sensor circuits and also it derives the transconductance of 67 which is similar to silicon OTA. The amplifier designed here gives unit gain of 42[Formula: see text]dB with a frequency of 195[Formula: see text]Hz which is suitable for low-frequency biosignal processing applications.

scholarly journals Optimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor for Steep Subthreshold Slope

Electronics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 275 ◽  
Author(s):  
Faraz Najam ◽  
Yun Yu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Corner Effect ◽  
New Device ◽  
Optimum Configuration ◽  
Effect Transistor ◽  
Dual Material

The L-shaped tunneling field-effect-transistor (LTFET) has been recently introduced to overcome the thermal subthreshold limit of conventional metal-oxide-semiconductor field-effect-transistors (MOSFET). In this work, the shortcomings of the LTFET was investigated. It was found that the corner effect present in the LTFET effectively degrades its subthreshold slope. To avoid the corner effect, a new type of device with dual material gates is presented. The new device, termed the dual-gate (DG) LTEFT (DG-LTFET), avoids the corner effect and results in a significantly improved subthreshold slope of less than 10 mV/dec, and an improved ON/OFF current ratio over the LTFET. The DG-LTFET was evaluated for different device parameters and bench-marked against the LTFET. This work presents the optimum configuration of the DG-LTFET in terms of device dimensions and doping levels to determine the best subthreshold, ON current, and ambipolar performance.

Boosting on Current Using Various Source Material for Dual Gate Tunnel Field Effect Transistor

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Priyadarshini N D ◽  
Nayana G H ◽  
P Vimala
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Source Material ◽  
Oxide Semiconductor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Dual Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Tunnel Field Effect Transistors (TFET) have demonstrated to have likely applications in the cutting-edge low force and super low force semiconductors to substitute the conventional FETs. TFET will be able to provide steep inverse subthreshold swing slope also maintaining a low leakage current, making it an essential structure for limiting the power consumption in Metal Oxide Semiconductor FETs.In this paper, we are simulating different structures of TFET by varying source material to boost the ON current of the device. The different models are designed and simulated using Silvaco TCAD simulator and transfer characteristics are studied.

scholarly journals Simulation Analysis in Sub-0.1 μm for Partial Isolation Field-Effect Transistors

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 227 ◽  
Author(s):  
Young Kim ◽  
Jin Lee ◽  
Geon Kim ◽  
Taesik Park ◽  
HuiJung Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Simulation Analysis ◽  
Field Effect Transistors ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Doping Profile ◽  
Effect Transistor ◽  
Current Characteristics ◽  
Partial Isolation

In this paper, we extensively analyzed the drain-induced barrier lowering (DIBL) and leakage current characteristics of the proposed partial isolation field-effect transistor (PiFET) structure. We then compared the PiFET with the conventional planar metal-oxide semiconductor field-effect transistor (MOSFET) and silicon on insulator (SOI) structures, even though they have the same doping profile. Two major features of the PiFET are potential condensation and potential modulation by a buried insulator. The potential modulation near the drain region can control the electric field in the overlapped region of the drain and gate, because it causes a high gate-fringing field. Therefore, we suggest guidelines with respect to the optimal PiFET structure.

Superior electronic structure of two-dimensional 3d transition metal dicarbides for applications in spintronics

2018 ◽  
Vol 6 (15) ◽  
pp. 4290-4299 ◽  
Author(s):  
Baozeng Zhou ◽  
Xiaocha Wang ◽  
Wenbo Mi
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Spin Orientation ◽  
Back Gate ◽  
Electrical Control ◽  
Vertical Electric Field ◽  
Gate Potential ◽  
Effect Transistor

The potential application of spin transport in a CrC2-based field-effect transistor on a flexible substrate. It is possible to realize electrical control on the SOC-induced insulating state and on carriers’ spin orientation by applying a vertical electric field, which can simulate the back-gate potential (VG) in field-effect transistors.

scholarly journals T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 64
Author(s):  
Zeqi Chen ◽  
Jianping Hu ◽  
Hao Ye ◽  
Zhufei Chu
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Structure Design ◽  
Channel Structure ◽  
Oxide Semiconductor ◽  
Back Gate ◽  
Effect Transistor ◽  
Current Characteristics

In this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections. The top gate is above the horizontal channel, while the front gate and back gate are on either side of the vertical channel. The T-shaped channel structure increases the coupling area between the top gate and the front and back gates, which improves the ability of the gate electrodes to control the channel. What’s more, it makes the top gate have almost the same control ability for the channel as the front gate and the back gate. This unique structure design brings a unique function in that the device is turned on only when two or three inputs are activated. Silvaco technology computer-aided design (TCAD) simulations are used to verify the current characteristics of the proposed Ti-TcFET. The current characteristics of the device are theoretically analyzed, and the results show that the theoretical analysis agrees with the TCAD simulation results. The proposed Ti-TcFET devices with three input terminals can be used to simplify the complex circuits in a compact style with reduced counts of transistors compared with the traditional complementary metal–oxide–semiconductor/ fin field-effect transistors (CMOS/FinFETs) with a single input terminal and thus provides a new idea for future circuit designs.

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