scholarly journals Temperature Compensation Circuit for ISFET Sensor

2020 ◽  
Vol 10 (1) ◽  
pp. 2 ◽  
Author(s):  
Ahmed Gaddour ◽  
Wael Dghais ◽  
Belgacem Hamdi ◽  
Mounir Ben Ali
Keyword(s):  
Integrated Circuit ◽  
Temperature Compensation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Aqueous Samples ◽  
Single Chip ◽  
Compensation Circuit ◽  
Ph Measurements ◽  
Ph Values ◽  
Effect Transistor

PH measurements are widely used in agriculture, biomedical engineering, the food industry, environmental studies, etc. Several healthcare and biomedical research studies have reported that all aqueous samples have their pH tested at some point in their lifecycle for evaluation of the diagnosis of diseases or susceptibility, wound healing, cellular internalization, etc. The ion-sensitive field effect transistor (ISFET) is capable of pH measurements. Such use of the ISFET has become popular, as it allows sensing, preprocessing, and computational circuitry to be encapsulated on a single chip, enabling miniaturization and portability. However, the extracted data from the sensor have been affected by the variation of the temperature. This paper presents a new integrated circuit that can enhance the immunity of ion-sensitive field effect transistors (ISFET) against the temperature. To achieve this purpose, the considered ISFET macro model is analyzed and validated with experimental data. Moreover, we investigate the temperature dependency on the voltage-current (I-V). Accordingly, an improved conditioning circuit is designed in order to reduce the temperature sensitivity on the measured pH values of the ISFET sensor. The numerical validation results show that the developed solution accurately compensates the temperature variation on the measured pH values at low power consumption.

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

scholarly journals A Novel Conditioning Circuit for Floating-Gate ISFET Bio-Sensor

2021 ◽  
Vol 15 ◽  
pp. 1174-1183
Author(s):  
Ahmed Gaddour ◽  
Hafedh Ben Hassen ◽  
Wael Dghais ◽  
Hamdi Belgacem ◽  
Mounir Ben Ali
Keyword(s):  
Integrated Circuit ◽  
Temperature Compensation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Measurement Range ◽  
Floating Gate ◽  
Readout Circuit ◽  
Output Measurement ◽  
Interface Circuit ◽  
Thermal Stability Of

Floating-Gate-Ions-Sensitive-Field-Effect-Transistors (FG-ISFETs) are becoming the sensor’s platform for various fields such as biomedical and chemical sensors. Despite many advantages like quick response, small size as well as wide measurement range, the efficiency of the output measurement is widely affected by temperature, This requires more safety in the measured results and the analysis’s tools. This study describes a novel integrated circuit that improves the thermal stability of the output signal of the ion-sensitive field effect transistors (ISFETs). After that, we investigate the temperature dependency of the FG-ISFET using the mentioned macro model and we shows that the temperature coefficient is about of 6 mV/°C. Afterward, a new integrated interface circuit that can perform great temperature compensation was developed. This operation aims to enhance stability of readout circuit for FG-ISFET. The achieved result of the FG-ISFET under different simulations shows that the readout circuit has a good temperature compensation i.e. :2.4 〖10〗^(-9) mV/°C.

scholarly journals Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 39
Author(s):  
Abhiroop Bhattacharjee ◽  
Thanh Chien Nguyen ◽  
Vivek Pachauri ◽  
Sven Ingebrandt ◽  
Xuan Thang Vu
Keyword(s):  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Impedance Sensing ◽  
Biomolecular Sensing ◽  
Label Free Detection ◽  
Effect Transistor ◽  
Detection Of Biomolecules

Impedance sensing with silicon nanowire field-effect transistors (SiNW-FETs) shows considerable potential for label-free detection of biomolecules. With this technique, it might be possible to overcome the Debye-screening limitation, a major problem of the classical potentiometric readout. We employed an electronic circuit model in Simulation Program with Integrated Circuit Emphasis (SPICE) for SiNW-FETs to perform impedimetric measurements through SPICE simulations and quantitatively evaluate influences of various device parameters to the transfer function of the devices. Furthermore, we investigated how biomolecule binding to the surface of SiNW-FETs is influencing the impedance spectra. Based on mathematical analysis and simulation results, we proposed methods that could improve the impedimetric readout of SiNW-FET biosensors and make it more explicable.

The Electronic Circuit Composition and Structure of Warp and Woof for a Novel Hybrid Opto-Electronic Integrated Systems with Textile Structures

2003 ◽  
Vol 769 ◽  
Author(s):  
Shigekazu Kuniyoshi ◽  
Kuniaki Tanaka
Keyword(s):  
Integrated Circuit ◽  
Field Effect ◽  
Electronic Circuit ◽  
Field Effect Transistors ◽  
Light Emitting Diode ◽  
Basic Structure ◽  
Light Emitting ◽  
Flexible Fiber ◽  
Composition And Structure ◽  
Effect Transistor

AbstractThe new integrated circuit concept that forms electronic equipment by the textile structure using the flexible fiber that has equipped the field effect transistor, the light emitting diode, the wiring pattern, etc. is proposed [1]. In this report, the structure of the filamentous body as a basic structure of the cloth with various electronic functions was examined. In order to simplify circuit composition, an active element such as field effect transistors, the electrode pattern for wiring, and the pads for connection are formed on the warp, and the electrode pattern for wiring and the pad for connection are formed on the woof. The circuit composition and a concrete structure of the warp and the woof are discussed.

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Honeycomb Lattice ◽  
Theoretical Studies ◽  
Fabrication Technology ◽  
Dirac Cone ◽  
Free Standing ◽  
Silicene Nanoribbons ◽  
Effect Transistor

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

scholarly journals Sensors based in suspended gate field effect transistors for pH measurements

2013 ◽  
Vol 421 ◽  
pp. 012006
Author(s):  
B da Silva Rodrigues ◽  
A L Siarkowski ◽  
O De Sagazan ◽  
S Crand ◽  
T Mohammed-Brahim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ph Measurements

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

scholarly journals Diacenopentalene dicarboximides as new n-type organic semiconductors for field-effect transistors

2016 ◽  
Vol 4 (37) ◽  
pp. 8758-8764 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Linzhi Jing ◽  
Chunyan Chi
Keyword(s):  
Organic Semiconductors ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Processing Technique ◽  
Solution Processing ◽  
Effect Transistor

Two diacenopentalene dicarboximides were synthesized, and their devices made with solution-processing technique exhibited n-type field-effect transistor behavior with electron mobility of up to 0.06 cm2 V−1 s−1.

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