scholarly journals The Effect of Crystal Defects on 3D High-Resolution Diffraction Peaks: A FFT-Based Method

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1669 ◽  
Author(s):  
Komlavi Eloh ◽  
Alain Jacques ◽  
Gabor Ribarik ◽  
Stéphane Berbenni
Keyword(s):  
Gibbs Phenomenon ◽  
Accurate Method ◽  
Crystal Defects ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
X Ray ◽  
In Situ Experiments ◽  
Diffraction Peaks ◽  
A Current

Forward modeling of diffraction peaks is a potential way to compare the results of theoretical mechanical simulations and experimental X-ray diffraction (XRD) data recorded during in situ experiments. As the input data are the strain or displacement field within a representative volume of the material containing dislocations, a computer-aided efficient and accurate method to generate these fields is necessary. With this aim, a current and promising numerical method is based on the use of the fast Fourier transform (FFT)-based method. However, classic FFT-based methods present some numerical artifacts due to the Gibbs phenomenon or “aliasing” and to “voxelization” effects. Here, we propose several improvements: first, a consistent discrete Green operator to remove “aliasing” effects; and second, a method to minimize the voxelization artifacts generated by dislocation loops inclined with respect to the computational grid. Then, we show the effect of these improvements on theoretical diffraction peaks.

Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon

2011 ◽  
Vol 44 (3) ◽  
pp. 526-531 ◽  
Author(s):  
David Allen ◽  
Jochen Wittge ◽  
Jennifer Stopford ◽  
Andreas Danilewsky ◽  
Patrick McNally
Keyword(s):  
Semiconductor Industry ◽  
Three Dimensional ◽  
Crystal Defects ◽  
Three Dimensions ◽  
Dimensional Structure ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Imaging ◽  
Relationship Of

In the semiconductor industry, wafer handling introduces micro-cracks at the wafer edge and the causal relationship of these cracks to wafer breakage is a difficult task. By way of understanding the wafer breakage process, a series of nano-indents were introduced both into 20 × 20 mm (100) wafer pieces and into whole wafers as a means of introducing controlled strain. Visualization of the three-dimensional structure of crystal defects has been demonstrated. The silicon samples were then treated by various thermal anneal processes to initiate the formation of dislocation loops around the indents. This article reports the three-dimensional X-ray diffraction imaging and visualization of the structure of these dislocations. A series of X-ray section topographs of both the indents and the dislocation loops were taken at the ANKA Synchrotron, Karlsruhe, Germany. The topographs were recorded on a CCD system combined with a high-resolution scintillator crystal and were measured by repeated cycles of exposure and sample translation along a direction perpendicular to the beam. The resulting images were then rendered into three dimensions utilizing open-source three-dimensional medical tomography algorithms that show the dislocation loops formed. Furthermore this technique allows for the production of a video (avi) file showing the rotation of the rendered topographs around any defined axis. The software also has the capability of splitting the image along a segmentation line and viewing the internal structure of the strain fields.

In Situ X-Ray Diffraction of an Arc Weld Showing the Phase Transformations of Ti and Fe as a Function of Position in the Weld Performed at a Synchrotron

1993 ◽  
Vol 37 ◽  
pp. 479-482 ◽  
Author(s):  
Joe Wong ◽  
J. W. Elmer ◽  
P. A. Waide ◽  
E. M. Larson
Keyword(s):  
Combustion Synthesis ◽  
Ferroelectric Material ◽  
Bragg Diffraction ◽  
Intermediate Species ◽  
X Ray Diffraction ◽  
Synchrotron Source ◽  
X Ray ◽  
Subsequent Phase ◽  
Diffraction Peaks

The synchrotron x-ray source provides a unique opportunity to observe many “in-situ” processes. The formation of the “short-lived” intermediate species, Ta2C, during the combustion synthesis of TaC, has been observed and reported by monitoring the Bragg diffraction peaks of the reactants and products, Similarly, the synthesis of the ferroelectric material, BaTiO3, and subsequent phase transfonnation from cubic to tetragonal have also been investigated. These experiments would not have been possible without the high incident x-ray flux available at a synchrotron source.

Real‐time X‐ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments

2011 ◽  
Vol 208 (11) ◽  
pp. 2499-2504 ◽  
Author(s):  
A. N. Danilewsky ◽  
J. Wittge ◽  
A. Hess ◽  
A. Cröll ◽  
A. Rack ◽  
...  
Keyword(s):  
High Temperature ◽  
Real Time ◽  
X Ray Diffraction ◽  
Semiconductor Wafer ◽  
X Ray ◽  
In Situ Experiments ◽  
Diffraction Imaging

RF-Magnetron Sputtered Strontium Titanate: Structure, Processing and Property Relationships

1999 ◽  
Vol 603 ◽  
Author(s):  
B.J. Gibbons ◽  
Y. Fan ◽  
A.T. Findikoglu ◽  
D.W. Reagor ◽  
Q.X. Jia
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Ozone Treatment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Treated Sample ◽  
Diffraction Peaks ◽  
Compositional Variations ◽  
First Time

AbstractThe low frequency dielectric properties of epitaxial SrTiO3 thin films deposited on LaAlO3 are presented. The films were deposited using radio-frequency magnetron sputtering from stoichiometric targets in an Ar/O2 atmosphere. For the first time, the effects of in situ ozone annealing during the early stages of deposition were explored. X-ray diffraction results indicated that the ozone treatment resulted in more symmetric and sharper diffraction peaks (2 Θ- FWHM decreased from 0.17° to 0.10°). In addition, the peaks for the ozone treated samples were shifted in 2 Θ towards values approaching the bulk value. Rutherford backscattering measurements showed Sr/Ti ratios of 1:1 for these samples, indicating these peak shifts are not due to compositional variations. The dielectric constant of the ozone treated samples increased from 275 at room temperature to 1175 at 22 K (measured at 100 kHz). The effective loss tangent of the device remained between 1 × 10−4 and 1 × 10−3 down to 100 K, where it began to increase. The tunability was also measured. The ozone treated sample showed tunability of 46%, 43% and 38% at 22 K, 40 K and 60 K, respectively. Finally, similar measurements were completed at 1 MHz, indicating a minimal dependence of these properties on frequencies in this range.

Microstructure of In Situ Particles/7055Al Matrix Composites with Deep Cryogenic Treatment

2012 ◽  
Vol 217-219 ◽  
pp. 114-118 ◽  
Author(s):  
Xun Yin Zhang ◽  
Gui Rong Li ◽  
Ting Wang Zhang ◽  
Lei Cao ◽  
Hong Ming Wang ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Cryogenic Treatment ◽  
Matrix Composites ◽  
X Ray Diffraction ◽  
Scanning Electronic Microscopy ◽  
Electronic Microscopy ◽  
Deep Cryogenic Treatment ◽  
X Ray ◽  
Diffraction Peaks

Al2O3，Al3Ti and Al3Zr particles reinforced 7055 aluminium matrix composites were fabricated via melt reaction method. The volume fraction is controlled at about 4-5%. After extrusion and solution-aging heat treatment the sample was prepared for deep cryogenic treatment, The microstructure and evolution of mechanical properties of (Al3Ti+Al3Zr)p/7055 composites were analyzed using optical microscopy(OM),scanning electronic microscopy(SEM) and X-ray diffraction(XRD). Some θ(Al2Cu) phases with nanometer size precipitate in the inner grain. As some grains preferred orient the intensity of some main diffraction peaks increase. Compared with those of as-cast and squeezed states the micro hardness has increased by 16.8% and 10.0% separately.

scholarly journals Lattice Strain Evolutions in Ni-W Alloys during a Tensile Test Combined with Synchrotron X-ray Diffraction

Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4027
Author(s):  
Tarik Sadat ◽  
Damien Faurie ◽  
Dominique Thiaudière ◽  
Cristian Mocuta ◽  
David Tingaud ◽  
...  
Keyword(s):  
Solid Solution ◽  
Tensile Test ◽  
Single Phase ◽  
Lattice Strain ◽  
Tensile Tests ◽  
X Ray Diffraction ◽  
X Ray ◽  
Significant Difference ◽  
Diffraction Peaks

Ni and Ni(W) solid solution of bulk Ni and Ni-W alloys (Ni-10W, Ni-30W, and Ni-50W) (wt%) were mechanically compared through the evolution of their {111} X-ray diffraction peaks during in situ tensile tests on the DiffAbs beamline at the Synchrotron SOLEIL. A significant difference in terms of strain heterogeneities and lattice strain evolution occurred as the plastic activity increased. Such differences are attributed to the number of brittle W clusters and the hardening due to the solid solution compared to the single-phase bulk Ni sample.

scholarly journals Ultrafast visualization of crystallization and grain growth in shock-compressed SiO2

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
A. E. Gleason ◽  
C. A. Bolme ◽  
H. J. Lee ◽  
B. Nagler ◽  
E. Galtier ◽  
...  
Keyword(s):  
High Pressure ◽  
Grain Growth ◽  
Shock Compression ◽  
Fused Silica ◽  
X Ray Diffraction ◽  
Pump Probe ◽  
X Ray ◽  
Equilibrium Processes ◽  
Diffraction Peaks

Abstract Pressure- and temperature-induced phase transitions have been studied for more than a century but very little is known about the non-equilibrium processes by which the atoms rearrange. Shock compression generates a nearly instantaneous propagating high-pressure/temperature condition while in situ X-ray diffraction (XRD) probes the time-dependent atomic arrangement. Here we present in situ pump–probe XRD measurements on shock-compressed fused silica, revealing an amorphous to crystalline high-pressure stishovite phase transition. Using the size broadening of the diffraction peaks, the growth of nanocrystalline stishovite grains is resolved on the nanosecond timescale just after shock compression. At applied pressures above 18 GPa the nuclueation of stishovite appears to be kinetically limited to 1.4±0.4 ns. The functional form of this grain growth suggests homogeneous nucleation and attachment as the growth mechanism. These are the first observations of crystalline grain growth in the shock front between low- and high-pressure states via XRD.

Properties of Mbe Grown Heterostructures of GaAs/InSb and InP/InSb.

1989 ◽  
Vol 145 ◽  
Author(s):  
M. T. Asom ◽  
E. A. Fitzgerald ◽  
F. A. Thiel ◽  
R. People ◽  
D. Eaglesham ◽  
...  
Keyword(s):  
Hall Effect ◽  
Lattice Mismatch ◽  
High Energy ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Energy Position ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Peaks

AbstractWe have employed molecular beam epitaxy in the growth of InSb on GaAs and InP. The transport, optical and structural properties of the films were investigated by in-situ reflection high energy electron diffraction, Hall effect and temperature dependent Hall effect, photoluminescence, transmission electron microscopy and X-ray diffractometry techniques. We report mobilities of up to 32,000 cm2/volt-sec and free electron concentrations of 3x1016/cm3 at room temperature. We have discovered a new defect state in InSb with an energy position of Ec - 0.05 ± 0.006eV. Optical and structural measurements reveal that the differences in thermal expansion and lattice mismatch between the substrates and films results in the broadening of the X-ray diffraction peaks and the near gap photoluminescence linewidths. Furthermore, we observe band gap shifts to higher energies of 10meV and 20meV for growth on GaAs and InP, respectively.

In situX-ray diffraction study of deformation and shape recovery in the aged U–6.2wt%Nb alloy

2017 ◽  
Vol 32 (2) ◽  
pp. 72-77 ◽  
Author(s):  
Y. Z. Zhang ◽  
D. P. Wang ◽  
W. J. Guan ◽  
X. L. Chen ◽  
X. L. Wang
Keyword(s):  
Phase Transformation ◽  
Shape Recovery ◽  
Recovery Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Macroscopic Deformation ◽  
Recovery Mechanisms ◽  
Diffraction Peaks ◽  
Elastic Stage

The present work focuses on the deformation and recovery mechanisms of aged monoclinic U–Nb alloy under tension and load–unload cycle testing usingin situX-ray diffraction (XRD). The U–6.2wt% Nb (U–6.2Nb) alloy was prepared and aged at 200 °C, and then underwent tensile testing followed by thein situXRD. The experimental results indicate that the change of diffraction peaks can serve to accurately characterize the macroscopic deformation and recovery. Compared with the as-quenched alloy, the aged U–6.2Nb alloy displays different behavior during deformation and subsequent recovery. Phase transformation competes with twin rearrangement to dominate the deformation and recovery between elastic stage and slip stage of the alloy. The lattice plane relationship between α″ and γ° during phase transformation has also been given.

scholarly journals In Situ Investigation of the Oxidation Behaviour of Chemical Vapour Deposited Zr(C,N) Hard Coatings Using Synchrotron X–ray Diffraction

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 264
Author(s):  
Florian Frank ◽  
Michael Tkadletz ◽  
Christian Saringer ◽  
Andreas Stark ◽  
Norbert Schell ◽  
...  
Keyword(s):  
Chemical Vapour ◽  
Oxidation Mechanism ◽  
Oxidation Behaviour ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zro2 Phase ◽  
In Situ Investigation ◽  
In Situ Experiments

The oxidation behaviour of chemical vapour deposited ZrN, ZrC and ZrCN coatings was investigated using in-situ synchrotron X–ray diffraction (XRD). To obtain a precise analysis of the temperature–dependent phase evolution during oxidation, coating powders were annealed in air between 100 °C and 1000 °C. Simultaneously, 2D XRD patterns were recorded in ~2 °C increments, which were subsequently evaluated using parametric Rietveld refinement. The results were correlated with differential scanning calorimetry and thermogravimetric analysis measurements, to further illuminate the oxidation mechanism of each coating system. ZrCN exhibited the highest oxidation onset temperature, followed by ZrC and ZrN. Furthermore, ZrCN was completely oxidised at a temperature of ~720 °C, which was ~50–70 °C higher than for ZrN and ZrC. The in–situ experiments revealed a similar oxidation sequence for all three samples: first, tetragonal and/or cubic (c/t)–ZrO2 is formed, which subsequently transforms into the more stable monoclinic (m)–ZrO2 phase. ZrCN and ZrC showed a higher c/t–ZrO2 fraction than the ZrN sample at 1000 °C. Furthermore, ex–situ Raman and XRD investigations of the oxidised samples revealed the ongoing c/t–ZrO2 → m–ZrO2 phase transformation during cooling.

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