scholarly journals Polarized Catalytic Polymer Nanofibers

Materials ◽  
2019 ◽  
Vol 12 (18) ◽  
pp. 2859 ◽  
Author(s):  
Dinesh Lolla ◽  
Ahmed Abutaleb ◽  
Marjan A. Kashfipour ◽  
George G. Chase
Keyword(s):  
Electron Microscopy ◽  
Metallic Nanoparticles ◽  
Polyvinylidene Fluoride ◽  
Morphological Changes ◽  
Industrial Applications ◽  
Metallic Nanoparticle ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Catalytic Support ◽  
Transmission Electron

Molecular scale modifications were achieved by spontaneous polarization which is favored in enhancements of β-crystallization phase inside polyvinylidene fluoride (PVDF) nanofibers (NFs). These improvements were much more effective in nano and submicron fibers compared to fibers with relatively larger diameters. Metallic nanoparticles (NPs) supported by nanofibrous membranes opened new vistas in filtration, catalysis, and serving as most reliable resources in numerous other industrial applications. In this research, hydrogenation of phenol was studied as a model to test the effectiveness of polarized PVDF nanofiber support embedded with agglomerated palladium (Pd) metallic nanoparticle diameters ranging from 5–50 nm supported on polymeric PVDF NFs with ~200 nm in cross-sectional diameters. Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), Energy Dispersive X-Ray Spectroscopy (EDX), Fourier Transform Infrared Spectroscopy (FTIR) and other analytical analysis revealed both molecular and surface morphological changes associated with polarization treatment. The results showed that the fibers mats heated to their curie temperature (150 °C) increased the catalytic activity and decreased the selectivity by yielding substantial amounts of undesired product (cyclohexanol) alongside with the desired product (cyclohexanone). Over 95% phenol conversion with excellent cyclohexanone selectivity was obtained less than nine hours of reaction using the polarized PVDF nanofibers as catalytic support structures.

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

2020 ◽  
Vol 1004 ◽  
pp. 414-420
Author(s):  
Junro Takahashi ◽  
Kotaro Kawaguchi ◽  
Kazuhiko Kusunoki ◽  
Tomoyuki Ueyama ◽  
Kazuhito Kamei
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solution Growth ◽  
Spiral Growth ◽  
Growth Surface ◽  
Vicinal Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We have studied the microstructure of the growth surface of the 4H-SiC grown by the m-face solution growth. Atomic Force Microscopy (AFM) revealed the micro-striped morphology with the asperity of several nm in the band-like morphology region. The cross-sectional Transmission Electron Microscopy (XTEM) showed that the growth surface consisted of a bunch of nanofacets and vicinal surface. This peculiar morphology is totally different from that of conventional spiral growth on c-face, which can be closely related with the growth mechanism of the m-face solution growth.

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

Si1-xGex Critical Thickness for Surface Wave Generation During UHV-CVD Growth at 525°C

1995 ◽  
Vol 399 ◽  
Author(s):  
H. Lafontaine ◽  
D.C. Houghton ◽  
B. Bahierathan ◽  
D.D. Perovic ◽  
J.-M. Baribeau
Keyword(s):  
Electron Microscopy ◽  
Surface Waves ◽  
Critical Thickness ◽  
Critical Value ◽  
Misfit Dislocations ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Cvd Growth

ABSTRACTSeveral Si1-xGex/Si heterostructures were grown at 525°C using a commercially available UHV-CVD reactor. Layers with a germanium fraction ranging from 0.15 to 0.5 were examined by means of cross-sectional transmission electron microscopy and atomic force microscopy. Surface waves were found in layers with a thickness above a critical value which decreases rapidly as the Ge fraction is increased. Both experimental and modeling results show that surface waves are generated before misfit dislocations for Ge fractions above 0.3.

Microstructure and Electronic Properties of Thin Film Nanoporous Silica as a Function of Processing and Annealing Methods

2000 ◽  
Vol 612 ◽  
Author(s):  
Christine Caragianis-Broadbridge ◽  
John R. Miecznikowski ◽  
Wenjuan Zhu ◽  
Zhijiong Luo ◽  
Jin-ping Han ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electronic Properties ◽  
Porous Silica ◽  
Metal Alkoxide ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Mis Devices ◽  
P Type ◽  
Film Porosity

AbstractAlcogels, aerogel precursors, were prepared by hydrolysis and condensation of the metal alkoxide tetraethylorthosilicate and were catalyzed by both acids and bases, according to a standard reaction. Alcogel solution was spin coated onto p-type silicon wafers and fluid extraction was achieved in an uncontrolled (room temperature, atmospheric pressure) environment. Film porosity was retained through surface modification and/or low vapor pressure solvent techniques. The microstructure and electronic properties of the resulting films were evaluated using non-contact atomic force microscopy (nc-AFM), cross sectional scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Metal insulator semiconductor (MIS) devices were prepared and current-voltage and capacitance-voltage measurements were obtained from these devices. Annealing studies reveal a dramatic temperature dependent effect on both the microstructure and electronic properties of the porous silica films.

MORPHOLOGICAL CONTROL OF GaN BUFFER LAYERS GROWN BY MOLECULAR BEAM EPITAXY ON 6H–SiC(0001)

2000 ◽  
Vol 07 (05n06) ◽  
pp. 565-570 ◽  
Author(s):  
CHANGWU HU ◽  
DAVID J. SMITH ◽  
R. B. DOAK ◽  
I. S. T. TSONG
Keyword(s):  
Electron Microscopy ◽  
Substrate Surface ◽  
Supersonic Jet ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Cross Sectional ◽  
Growth Ratio ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

The growth of GaN buffer layers of thickness 10–25 nm directly on 6H–SiC (0001) substrates was studied using low energy electron microscopy, atomic force microscopy and cross-sectional transmission electron microscopy. The Ga flux was supplied by an evaporative source, while the NH3 flux came from a seeded beam supersonic jet source. By monitoring the growth in situ and by suitably adjusting the Ga/NH 3 flux ratio, smooth basal-plane-oriented GaN layers were grown on hydrogen-etched SiC substrates at temperatures in the range of 600–700°C. The growth proceeds via nucleation of small flat islands at the step edges of the 6H–SiC (0001) substrate surface. The islands increase in size with a lateral-to-vertical growth ratio of ~10 and eventually coalesce into a quasicontinuous layer. A highly defective substrate surface was found to be detrimental to the growth of flat buffer layers.

Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers

2020 ◽  
Vol 1004 ◽  
pp. 421-426
Author(s):  
Hideki Sako ◽  
Kentaro Ohira ◽  
Kenji Kobayashi ◽  
Toshiyuki Isshiki
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stacking Faults ◽  
Wafer Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
The Difference

Two types of carrot defects with and without a shallow pit were found by mirror projection electron microscopy (MPJ) inspection in 4H-SiC epi wafer. Surface morphology and cross-sectional structure of prismatic stacking faults (PSFs) were investigated using MPJ and atomic force microscopy (AFM), transmission electron microscopy (TEM) and high-resolution scanning transmission electron microscopy (STEM). The depths of the surface grooves due to the PSFs, the stacking sequences around the PSFs and the structure of the Frank-type stacking faults which were connected to the PSFs were different. We discuss the difference between the two types of carrot defects.

scholarly journals Synthesis and Characterization of Complex Nanostructured Thin Films Based on Titanium for Industrial Applications

Materials ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 399 ◽  
Author(s):  
Rodica Vladoiu ◽  
Aurelia Mandes ◽  
Virginia Dinca ◽  
Maria Balasoiu ◽  
Dmytro Soloviov ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Lattice Parameter ◽  
Industrial Applications ◽  
Vacuum Arc ◽  
Average Roughness ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Cubic System ◽  
Gear Wheels ◽  
Thermionic Vacuum Arc

Titanium-based composites—titanium and silver (TiAg) and titanium and carbon (TiC)—were synthesized by the Thermionic Vacuum Arc (TVA) method on substrates especially for gear wheels and camshaft coating as mechanical components of irrigation pumps. The films were characterized by surface morphology, microstructure, and roughness through X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), and Small-Angle Neutron Scattering (SANS). The silver (Ag) films crystallized into a cubic system with lattice a = 4.0833 Å at room temperature, indexed as cubic Ag group Fm3m. The crystallites were oriented in the [111] direction, and mean grain size was <D>111 = 265 Å. The TiC structure revealed a predominant cubic TiC phase, with a = 0.4098 as a lattice parameter determined by Cohen’s method. Average roughness (Ra) was 8 nm for the as-grown 170 nm thick TiAg film, and 1.8 nm for the as-grown 120 nm thick TiC film. Characteristic SANS contribution was detected from the TiAg layer deposited on a substrate of high-quality stainless steel with 0.45% carbon (OLC45) in the range of 0.015 Å−1 ≤ Q ≤ 0.4 Å−1, revealing the presence of sharp surfaces and an averaged triaxial ellipsoidal core-shell object.

scholarly journals Early Stages of Antibacterial Damage of Metallic Nanoparticles by TEM and STEM-HAADF

2017 ◽  
Vol 14 (1) ◽  
pp. 54-61 ◽  
Author(s):  
Beatriz Liliana Espana-Sanchez ◽  
Carlos Alberto Avila-Orta ◽  
Luis Felipe Padilla-Vaca ◽  
Enrique Diaz Barriga-Castro ◽  
Florentino Soriano-Corral ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Metallic Nanoparticles ◽  
Morphological Changes ◽  
Intracellular Localization ◽  
Outer Cell ◽  
Antibacterial Mechanism ◽  
Elemental Mapping ◽  
Early Stages ◽  
Transmission Electron

Background: Propagation of pathogens has considered an important health care problem due to their resistance against conventional antibiotics. The recent challenge involves the design of functional alternatives such as nanomaterials, used as antibacterial agents. Early stages of antibacterial damage caused by metallic nanoparticles (NPs) were studied by Transmission Electron Microscopy (TEM) and combined Scanning Transmission Electron Microscopy with High Angle Annular Dark Field (STEM-HAADF), aiming to contribute to the elucidation of the primary antibacterial mechanism of metallic NPs. Methods: We analyze the NPs morphology by TEM and their antibacterial activity (AA) with different amounts of Ag and Cu NPs. Cultured P. aeruginosa were interacted with both NPs and processed by TEM imaging to determine NPs adhesion into bacteria wall. Samples were analyzed by combined STEM-HAADF to determine the NPs penetration into bacterium and elemental mapping were done. Results: Both NPs displays AA depending on NPs concentration. TEM images show NPs adhesion on bacterial cells, which produces morphological changes in the structure of the bacteria. STEMHAADF also proves the NPs adhesion and penetration by intracellular localization, detecting Ag/Cu species analyzed by elemental mapping. Moreover, the relative amount of phosphorus (P) and sulfur (S) increases slightly in P. aeruginosa with the presence of NPs. These elements are associated with damaged proteins of the outer cell membrane. Conclusions: Combined microscopy analyses suggest that the early stages of antibacterial damage caused by alteration of bacterial cell wall, and can be considered a powerful tool aiming to understand the primary antibacterial mechanism of NPs.

Investigation of the Shape of InGaAs/GaAs Quantum Dots

2002 ◽  
Vol 737 ◽  
Author(s):  
Susan Y. Lehman ◽  
Alexana Roshko ◽  
Richard P. Mirin ◽  
John E. Bonevich
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Molecular Beam ◽  
Length Scale ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Three Samples

ABSTRACTThree samples of self-assembled In0.44Ga0.56As quantum dots (QDs) grown on (001) GaAs by molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM) and high-resolution transmission electron microscopy (TEM) in order to characterize the height, faceting, and densities of the QDs. The cross-sectional TEM images show both pyramidal dots and dots with multiple side facets. Multiple faceting has been observed only in dots more than 8.5 nm in height and allows increased dot volume without a substantial increase in base area. Addition of a GaAs capping layer is found to increase the diameter of the QDs from roughly 40 nm to as much as 200 nm. The areal QD density is found to vary up to 50 % over the central 2 cm x 2 cm section of wafer and by as much as 23 % on a length scale of micrometers.

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