scholarly journals Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions

Materials ◽  
2019 ◽  
Vol 12 (22) ◽  
pp. 3713 ◽  
Author(s):  
Fei Zhao
Keyword(s):  
Electron Microscope ◽  
Integrated Circuit ◽  
Seed Layer ◽  
High Reliability ◽  
Through Silicon Vias ◽  
X Ray ◽  
Layer Structures ◽  
Silicon Vias ◽  
Scanning Electron

The high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully filled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention was paid to the samples with different seed layer structures. These samples were fabricated by different sputtering and treatment approaches, and accompanied with various electroplating profile adjustments. The images were observed and characterized by X-ray equipment and a scanning electron microscope (SEM). The results show that optimized sputtering and electroplating conditions can help improve the quality of TSVs, which could be interpreted as the interface effect of the TSV structure.

3D Void Imaging in Through Silicon Vias by X-Ray Nanotomography in an SEM

2013 ◽  
Author(s):  
David Laloum ◽  
Frédéric Lorut ◽  
Pierre Bleuet ◽  
Guillaume Audoit ◽  
Celine Ribiere
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Through Silicon Vias ◽  
X Ray ◽  
Tomography System ◽  
Silicon Vias ◽  
Scanning Electron

Abstract We have exploited an innovative X-ray tomography system, which is hosted in a Scanning Electron Microscope (SEM). The resolution reached by this equipment is closed to 160nm in 2 dimensions. We imaged Through Silicon Vias (TSV) which have undergone a manufacturing defect and characterized voids within these interconnections.

Fabrication of W/Cu Functionally Gradient Materials by Multi-Billet Extrusion

2005 ◽  
Vol 475-479 ◽  
pp. 1511-1516
Author(s):  
Jian Xin Xie ◽  
Shi Bo Li ◽  
Shu Chen
Keyword(s):  
Electron Microscope ◽  
Extrusion Process ◽  
X Ray Diffraction ◽  
Functionally Gradient Materials ◽  
Homogeneous Microstructure ◽  
Gradient Materials ◽  
X Ray ◽  
Functionally Gradient ◽  
Scanning Electron

W/Cu functionally gradient materials (FGMs) are fabricated by a novel process—multi-billet extrusion (MBE). Different W/Cu superfine powders made by mechanical alloying (MA) are used to improve the sinterability of W/Cu compacts. Good quality of three-layer W/Cu extrudes are obtained after confirming the extrusion parameters and the type and the content of binder during extrusion process. The green products are pressureless sintered at the temperature range of 1100-1300 oC for 1 h. W/Cu FGMs with relatively high density and high homogeneous microstructure are attained after sintering at 1200 oC for 1 h. The mechanisms for the enhance of sinterability and improvement of density of the mechanical alloyed (MAed) W-Cu powder products have been discussed. X-ray diffraction and scanning electron microscope are used to identify and observe phase constitution and microstructure, respectively.

Fabrication of Accurate Diamond - Metal Composite Cutting Blade by Electrotyping Method

2006 ◽  
Vol 304-305 ◽  
pp. 57-61
Author(s):  
L.L. Fang ◽  
Bing Lin Zhang ◽  
Ning Yao
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Ph Value ◽  
Photoemission Spectroscopy ◽  
Metal Composite ◽  
X Ray Diffraction ◽  
Electrolytic Solution ◽  
X Ray ◽  
Scanning Electron

In this paper, we report that the experimental results of fabricated diamond-metal composite film. Electrotyping method was used to deposit the thick film. During the deposition, low internal stress electrolytic solution, the electric current density of cathode, PH value, temperature, the distance between cathode and anode, the pretreatment of motherboard cathode were selected simultaneously. It was found that stirring strongly affected the quality of the film. Especially stirring velocity affected the distribution of diamond grains. Scanning electron microscope (SEM), X-ray photoemission spectroscopy (XPS) and X-ray diffraction (XRD) were used to measure the surface morphology, the crystal microstructure, diamond grains distribution and the chemical environment of the film.

A Path Toward Non-Destructive 3D Metrology for Through-Silicon Vias

2011 ◽  
Vol 2011 (1) ◽  
pp. 000017-000024 ◽  
Author(s):  
Jeff Gelb ◽  
LayWai Kong ◽  
Luke Hunter ◽  
Allen Gu ◽  
Tiffany Fong ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Through Silicon Vias ◽  
Modern Approach ◽  
Critical Dimensions ◽  
X Ray ◽  
Imaging Geometry ◽  
3D Stacking ◽  
Silicon Vias ◽  
3D Metrology ◽  
Non Destructive

As integrated circuit designs are pushed to tighter dimensions, chip real-estate is becoming of increasing value. Much like the growth of a developing city, a common modern approach is to grow the circuits upwards, building one layer on top of another. In this 3D stacking approach, the common issue lies in how to connect the multiple layers, for which direct connections through the silicon substrates have been found to produce the smallest footprint. These through-silicon vias (TSVs) are currently the subject of heavy research and development (R&D) investigation and their efficiencies are, in part, directly related to the occurrence or absence of voids within the metal structures. 3D x-ray microscopy (XRM) has recently been pushed to unprecedented resolution levels and may fit the inspection needs of the TSV R&D community. Using a unique projection-based micro-CT imaging geometry, entire packages may be inspected with as high as 1 μm resolution. This technique delivers non-destructive metrology of the metal fills as well as the post-etch regions in 3D, without the need for physical cutting or sectioning. By employing x-ray optics, resolution as high as 50 nm is now routinely achievable, allowing the detection of far sub-micron voids within the post-metallization TSV structures. These results may be further analyzed for void sizes and void volume fractions per via. Post-etch samples are also well-visualized using this technique, which allows high-resolution inspection of the side walls as well as measurement of the critical dimensions using the same system as for the post-metallization structures.

scholarly journals Surface Analysis for Signs of Corrosion of Fixed Orthodontic Appliances Used In Vivo

2016 ◽  
Vol 16 (3) ◽  
pp. 5-14
Author(s):  
M. Łępicka ◽  
M. Grądzka-Dahlke
Keyword(s):  
Corrosion Resistance ◽  
Electron Microscope ◽  
Surface Defects ◽  
Orthodontic Appliances ◽  
Casting Defects ◽  
X Ray ◽  
Fixed Orthodontic Appliances ◽  
Scanning Electron

Abstract The objective was to evaluate and assess the surface quality of fixed orthodontic appliances after intraoral usage for several months. Nine sets of orthodontic brackets by three different manufacturers and twelve archwires differing in chemical composition were analyzed in a scanning electron microscope with an energy dispersive X-ray analyzer for signs of corrosion. Obtained results showed that the majority of the evaluated appliances displayed no traces of corrosion. Machining or casting defects hardly ever act as the origins of corrosion processes. However, some samples displayed signs of corrosion of a galvanic and pitting nature. The authors claim, that despite the surface defects, most of the appliances were able to retain the desired corrosion resistance, although in some cases these flaws could act as the origin of corrosion processes.

scholarly journals Enhancement of Corrosion Resistance and Microbial Protection Analysis of a Rosin Coating with the Incorporation of Leucaena leucocephala

Coatings ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 825
Author(s):  
Wan Mohamad Ikhmal Wan Mohamad Kamaruzzaman ◽  
Maria Fazira Mohd Fekeri ◽  
Muhamad Syaizwadi Shaifudin ◽  
Wan Rafizah Wan Abdullah ◽  
Wan Mohd Norsani Wan Nik ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Corrosion Resistance ◽  
Electron Microscope ◽  
Leucaena Leucocephala ◽  
Electrochemical Impedance ◽  
Steel Grade ◽  
X Ray ◽  
Coating Formulation ◽  
Scanning Electron

Leucaena leucocephala leaves extract (LLE) was incorporated as an additive in a new coating formulation. The coatings containing different wt.% of the extracts were analysed by optical characterizations and we proceeded to the antimicrobial assessment. The coating was applied onto the surface of stainless steel grade 316L and immersed in seawater for 50 days. A batch of specimens was collected every 10 days and evaluated through electrochemical impedance spectroscopy (EIS), potentiodynamic polarization and scanning electron microscope with energy dispersive X-ray (SEM/EDX). The incorporation of 3 wt.% LLE into the coating (P2) matrix remarkably boosted the barrier quality of the coating.

Observability of Very Thick Specimen by Using Transmission Scanning Electron Microscope

1971 ◽  
Vol 29 ◽  
pp. 26-27
Author(s):  
K. Shibatomi ◽  
T. Yamanoto ◽  
H. Koike
Keyword(s):  
Electron Microscope ◽  
Image Quality ◽  
Scanning Electron Microscope ◽  
Chromatic Aberration ◽  
Image Contrast ◽  
Objective Lens ◽  
Thick Specimen ◽  
Transmission Electron ◽  
Scanning Electron

In the observation of a thick specimen by means of a transmission electron microscope, the intensity of electrons passing through the objective lens aperture is greatly reduced. So that the image is almost invisible. In addition to this fact, it have been reported that a chromatic aberration causes the deterioration of the image contrast rather than that of the resolution. The scanning electron microscope is, however, capable of electrically amplifying the signal of the decreasing intensity, and also free from a chromatic aberration so that the deterioration of the image contrast due to the aberration can be prevented. The electrical improvement of the image quality can be carried out by using the fascionating features of the SEM, that is, the amplification of a weak in-put signal forming the image and the descriminating action of the heigh level signal of the background. This paper reports some of the experimental results about the thickness dependence of the observability and quality of the image in the case of the transmission SEM.

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

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