scholarly journals Undulated Step Structure on the (0001¯) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 6816
Author(s):  
Hiroaki Shinya ◽  
Masataka Nakano ◽  
Noboru Ohtani
Keyword(s):  
Nitrogen Doping ◽  
Doping Concentration ◽  
Nitrogen Concentration ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Force Microscopy ◽  
Step Structure ◽  
Cell Height ◽  
Characteristic Wavelength ◽  
Growth Method

The step structure on the (0001¯)C facet of 4H-SiC boules grown by the physical vapor transport growth method with different nitrogen doping concentrations was examined in various scales, using different types of microscopy, such as differential interference contrast optical microscopy (DICM) and atomic force microscopy (AFM). DICM observations unveiled characteristic macroscopic surface features of the facet dependent on the nitrogen doping concentration. AFM observations revealed the existence of step trains of half unit-cell height (0.5 nm) on the facet and found that their separation was undulated with a characteristic wavelength dependent on the nitrogen doping concentration; the higher the nitrogen concentration, the longer was the undulation wavelength of step separation. Based on these results, we discussed the origin and formation mechanism of the separation-undulated step structure observed on the (0001¯)C facet of nitrogen-doped 4H-SiC boules.

The Relationship Between Micropipes and Screw Dislocations in Pvt Grown 6H-Sic

1996 ◽  
Vol 423 ◽  
Author(s):  
Jennifer Giocondi ◽  
Gregory S. Rohrer ◽  
Marek Skowronski ◽  
V. Balakrishna ◽  
G. Augustine ◽  
...  
Keyword(s):  
Scanning Force Microscopy ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Surface ◽  
Repeat Distance ◽  
Screw Dislocations ◽  
Burgers Vector ◽  
Force Microscopy ◽  
Scanning Force ◽  
The Relationship

AbstractThe growth surface of a 6H-SiC boule, grown by physical vapor transport, was examined using scanning force microscopy. The dimensions of surface/micropipe intersections and screw dislocation Burgers vectors have been determined from topographic data. All micropipes are positioned along the lines of super screw dislocations with a Burgers vectors of at least 4 times the c-axis repeat distance (15.2 Å). Perfect c-axis screw dislocations with Burgers vectors of only 15.2 Å are stable and do not have open cores. Measurements show that micropipe core radii, determined indirectly from the width of the craters formed at the surface/micropipe intersections, increase with the square of the dislocation Burgers vector.

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

2018 ◽  
Vol 924 ◽  
pp. 15-18
Author(s):  
Masashi Sonoda ◽  
Kentaro Shioura ◽  
Takahiro Nakano ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Resolution ◽  
Surface Morphology ◽  
Defect Structure ◽  
Growth Front ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Method

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping

2017 ◽  
Vol 897 ◽  
pp. 3-6 ◽  
Author(s):  
Hiromasa Suo ◽  
Kazuma Eto ◽  
Tomohisa Kato ◽  
Kazutoshi Kojima ◽  
Hiroshi Osawa ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray ◽  
Co Doping ◽  
Bulk Growth ◽  
Dislocation Densities ◽  
Growth Method ◽  
Co Doped

The growth of n-type 4H-SiC crystal was performed by physical vapor transport (PVT) growth method by using nitrogen and aluminum (N-Al) co-doping. Resistivity of N-Al co-doped 4H-SiC was as low as 5.8 mΩcm. The dislocation densities of N-Al co-doped substrates were evaluated by synchrotron radiation X-ray topography (SXRT). In addition, epitaxial growth was performed on the N-Al co-doped substrates by chemical vapor deposition (CVD). No double Shockley type stacking fault was observed in the epitaxial layer.

High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design

2006 ◽  
Vol 527-529 ◽  
pp. 83-86 ◽  
Author(s):  
Kap Ryeol Ku ◽  
Jung Kyu Kim ◽  
Jung Doo Seo ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Concentration Level ◽  
Vapor Transport ◽  
Crystal Quality ◽  
Physical Vapor Transport ◽  
Guide Tube ◽  
P Type ◽  
Transport Method ◽  
Vapor Transport Method

SiC single crystal ingots grown by sublimation physical vapor transport (PVT) technique were prepared and then the SiC crystal quality with varying crucible design employing a guide tube and tantalum foil was systematically investigated. The growth rate of 2-inch SiC crystal grown by these crucible designs was about 0.3 mm/hr. The n-type and p-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated. The doping concentration level of below ~1017/cm3 was extracted from the absorption spectrum and Hall measurement. The densities of micropipes and inclusions in SiC crystal boules grown using the graphite/Ta foil double layer guide tube were significantly decreased. Finally we improved crystal quality through the introduction of new crucible design.

Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method

2002 ◽  
Vol 240 (1-2) ◽  
pp. 117-123 ◽  
Author(s):  
T.L. Straubinger ◽  
M. Bickermann ◽  
R. Weingärtner ◽  
P.J. Wellmann ◽  
A. Winnacker
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Method ◽  
P Type

Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport

2005 ◽  
Vol 483-485 ◽  
pp. 9-12 ◽  
Author(s):  
Thomas Anderson ◽  
Donovan L. Barrett ◽  
J. Chen ◽  
Ejiro Emorhokpor ◽  
A. Gupta ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Low Temperature ◽  
Nitrogen Doping ◽  
Large Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Insulating Properties ◽  
Low Temperature Photoluminescence

Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique [1]. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed.

scholarly journals Optimization of sensor materials using physical vapor transport growth method

2021 ◽  
Author(s):  
Ian Emge ◽  
Daniel S. Kazal ◽  
Christopher Cooper ◽  
Rachit B. Sood ◽  
Sonali Saraf ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Method ◽  
Sensor Materials

Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport

2003 ◽  
Vol 257 (1-2) ◽  
pp. 75-83 ◽  
Author(s):  
H.-J. Rost ◽  
J. Doerschel ◽  
K. Irmscher ◽  
D. Schulz ◽  
D. Siche
Keyword(s):  
Single Crystals ◽  
Nitrogen Doping ◽  
Vapor Transport ◽  
Physical Vapor Transport

A new technique for measuring the local nitrogen concentration in Gap by means of the scanning electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 142-143
Author(s):  
Yu.A. Golubev ◽  
V.V. Evstropov ◽  
B.N. Kalinin ◽  
V.P. Lejnin ◽  
V.I. Petrov
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Nitrogen Doping ◽  
Doping Concentration ◽  
High Spatial Resolution ◽  
Nitrogen Concentration ◽  
Doping Profile ◽  
Luminescence Spectra ◽  
A New Technique ◽  
Scanning Electron

The nuclear reaction and optical absorption techniques have been developed to determine the absolute nitrogen doping concentration in GaP crystals/1/.In both cases the data measured are averaged over the doped layer and these methods do not permit to obtain the nitrogen doping profile across the layer.In this work the measurement of the nitrogen concentration in GaP LED structures is carried out with high spatial resolution by using the local cathodoluminescence (CL) data obtained in the scanning electron microscope (SEM).The method is based on determining in CL spectra the degree of the A-line self-absorption by substitutional nitrogen in GaP crystal.lt has been shown recently /2/ that in the temperature range of 77°K - 130°K without self-absorption the peak intensities ratio of A-line and its phonon replication side bands A-LO and A-2L0 in luminescence spectra of GaP should correspond to 1,00 : 0,36 : 0,065.

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