scholarly journals Figure of Merit Enhancement of Laterally Vibrating RF-MEMS Resonators via Energy-Preserving Addendum Frame

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 105
Author(s):  
Temesgen Bailie Workie ◽  
Zhaohui Wu ◽  
Panliang Tang ◽  
Jingfu Bao ◽  
Ken-ya Hashimoto
Keyword(s):  
Quality Factor ◽  
Figure Of Merit ◽  
Electromechanical Coupling ◽  
Rf Mems ◽  
Acoustic Energy ◽  
Frame Structure ◽  
Electromechanical Coupling Coefficient ◽  
Element Analysis ◽  
Mems Resonators ◽  
Spurious Mode

This paper examines a new technique to improve the figure of merit of laterally vibrating RF-MEMS resonators through an energy-preserving suspended addendum frame structure using finite element analysis. The proposed suspended addendum frame on the sides of the resonant plate helps as a mechanical vibration isolator from the supporting substrate. This enables the resonator to have a low acoustic energy loss, resulting in a higher quality factor. The simulated attenuation characteristics of the suspended addendum frame are up to an order of magnitude larger than those achieved with the conventional structure. Even though the deployed technique does not have a significant impact on increasing the effective electromechanical coupling coefficient, due to a gigantic improvement in the unloaded quality factor, from 4106 to 51,136, the resonator with the suspended frame achieved an 11-folds improvement in the figure of merit compared to that of the conventional resonator. Moreover, the insertion loss was improved from 5 dB down to a value as low as 0.7 dB. Furthermore, a method of suppressing spurious mode is demonstrated to remove the one incurred by the reflected waves due to the proposed energy-preserving structure.

scholarly journals FEM Analysis of Various Multilayer Structures for CMOS Compatible Wearable Acousto-Optic Devices

Sensors ◽  
2021 ◽  
Vol 21 (23) ◽  
pp. 7863
Author(s):  
Mehwish Hanif ◽  
Varun Jeoti ◽  
Mohamad Radzi Ahmad ◽  
Muhammad Zubair Aslam ◽  
Saima Qureshi ◽  
...  
Keyword(s):  
Coupling Coefficient ◽  
Figure Of Merit ◽  
Electromechanical Coupling ◽  
Piezoelectric Materials ◽  
Fem Analysis ◽  
Film Structure ◽  
Multilayer Structures ◽  
Electromechanical Coupling Coefficient ◽  
Materials Used ◽  
The Individual

Lately, wearable applications featuring photonic on-chip sensors are on the rise. Among many ways of controlling and/or modulating, the acousto-optic technique is seen to be a popular technique. This paper undertakes the study of different multilayer structures that can be fabricated for realizing an acousto-optic device, the objective being to obtain a high acousto-optic figure of merit (AOFM). By varying the thicknesses of the layers of these materials, several properties are discussed. The study shows that the multilayer thin film structure-based devices can give a high value of electromechanical coupling coefficient (k2) and a high AOFM as compared to the bulk piezoelectric/optical materials. The study is conducted to find the optimal normalised thickness of the multilayer structures with a material possessing the best optical and piezoelectric properties for fabricating acousto-optic devices. Based on simulations and studies of SAW propagation characteristics such as the electromechanical coupling coefficient (k2) and phase velocity (v), the acousto-optic figure of merit is calculated. The maximum value of the acousto-optic figure of merit achieved is higher than the AOFM of all the individual materials used in these layer structures. The suggested SAW device has potential application in wearable and small footprint acousto-optic devices and gives better results than those made with bulk piezoelectric materials.

Finite Element Analysis and Experimental Studies on the Thickness Resonance of Piezocomposite Transducers

1996 ◽  
Vol 18 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Wenkang Qi ◽  
Wenwu Cao
Keyword(s):  
Finite Element ◽  
Resonance Frequency ◽  
Electromechanical Coupling ◽  
Effective Medium Theory ◽  
Experimental Studies ◽  
Effective Medium ◽  
Electromechanical Coupling Coefficient ◽  
Element Analysis ◽  
Medium Theory ◽  
Resonance Frequencies

Finite element method (FEA) has been used to calculate the thickness resonance frequency and electromechanical coupling coefficient kt for 2–2 piezocomposite transducers. The results are compared with that of the effective medium theory and also verified by experiments. It is shown that the predicted resonance frequencies from the effective medium theory and the unit cell modeling using FEA deviate from the experimental observations for composite systems with a ceramic aspect ratio (width/length) more than 0.4. For such systems, full size FEA modeling is required which can provide accurate predictions of the resonance frequency and thickness coupling constant kt.

scholarly journals SILICON COMPATIBLE ACOUSTIC WAVE RESONATORS: DESIGN, FABRICATION AND PERFORMANCE

2014 ◽  
Vol 15 (2) ◽  
Author(s):  
Aliza Aini Md Ralib ◽  
Anis Nurashikin Nordin
Keyword(s):  
Acoustic Wave ◽  
Quality Factor ◽  
Surface Acoustic Wave ◽  
Insertion Loss ◽  
Electromechanical Coupling ◽  
High Reliability ◽  
Bulk Acoustic Wave ◽  
Electromechanical Coupling Coefficient ◽  
Single Chip ◽  
Acoustic Wave Resonators

ABSTRACT: Continuous advancement in wireless technology and silicon microfabrication has fueled exciting growth in wireless products. The bulky size of discrete vibrating mechanical devices such as quartz crystals and surface acoustic wave resonators impedes the ultimate miniaturization of single-chip transceivers. Fabrication of acoustic wave resonators on silicon allows complete integration of a resonator with its accompanying circuitry.  Integration leads to enhanced performance, better functionality with reduced cost at large volume production. This paper compiles the state-of-the-art technology of silicon compatible acoustic resonators, which can be integrated with interface circuitry. Typical acoustic wave resonators are surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators.  Performance of the resonator is measured in terms of quality factor, resonance frequency and insertion loss. Selection of appropriate piezoelectric material is significant to ensure sufficient electromechanical coupling coefficient is produced to reduce the insertion loss. The insulating passive SiO2 layer acts as a low loss material and aims to increase the quality factor and temperature stability of the design. The integration technique also is influenced by the fabrication process and packaging.  Packageless structure using AlN as the additional isolation layer is proposed to protect the SAW device from the environment for high reliability. Advancement in miniaturization technology of silicon compatible acoustic wave resonators to realize a single chip transceiver system is still needed. ABSTRAK: Kemajuan yang berterusan dalam teknologi tanpa wayar dan silikon telah menguatkan pertumbuhan yang menarik dalam produk tanpa wayar. Saiz yang besar bagi peralatan mekanikal bergetar seperti kristal kuarza menghalang pengecilan untuk merealisasikan peranti cip. Silikon serasi  gelombang akustik resonator mempunyai potensi yang besar untuk menggantikan unsur-unsur diskret kerana keupayaan untuk mengintegrasikan dengan litar yang disertakan itu. Integrasi ini membawa kepada peningkatan prestasi, fungsi yang lebih baik dengan pengurangan kos pada pengeluaran jumlah yang besar. Oleh itu, Karya ini mengkaji silikon resonator akustik yang serasi, yang bersepadu dengan muka litar untuk membolehkan integrasi yang lengkap. Resonator gelombang akustik yang digunakan adalah gelombang permukaan akustik ( SAW ) dan gelombang akustik pukal ( BAW ) resonator . Kriteria penting untuk menilai prestasi resonator seperti faktor kualiti, frekuensi resonans dan kehilangan sisipan juga digariskan dalam setiap kerja sebelumnya. Pemilihan bahan piezoelektrik yang sesuai adalah penting untuk memastikan pekali gandingan elektromekanik yang mencukupi dihasilkan untuk mengurangkan kehilangan sisipan. Lapisan tambahan pasif SiO2   yang bertindak sebagai bahan rendah sisipan dipercayai meningkatkan faktor kualiti dan kestabilan suhu reka bentuk. Teknik integrasi juga dipengaruhi oleh proses fabrikasi dan pembungkusan. Struktur tanpa pembungkusan menggunakan AlN sebagai lapisan pengasingan tambahan itu dicadangkan untuk melindungi peranti SAW dari persekitaran untuk kebolehpercayaan yang tinggi. Banyak lagi kemajuan perlu dilakukan dalam pengecilan silikon serasi resonator gelombang akustik untuk merealisasikan sistem cip transceiver tunggal.KEYWORDS: RF-MEMS; piezoelectric; resonator; surface acoustic wave (SAW);bulk acoustic wave (BAW); FBAR

scholarly journals A Laterally Vibrating Lithium Niobate MEMS Resonator Array Operating at 500 °C in Air

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 149
Author(s):  
Savannah R. Eisner ◽  
Cailin A. Chapin ◽  
Ruochen Lu ◽  
Yansong Yang ◽  
Songbin Gong ◽  
...  
Keyword(s):  
High Temperature ◽  
Lithium Niobate ◽  
Quality Factor ◽  
Electromechanical Coupling ◽  
Resonant Mode ◽  
Electromechanical Coupling Coefficient ◽  
Resonant Sensors ◽  
Mems Resonator ◽  
Temperature Coefficient Of Frequency ◽  
Temperature Exposure

This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor (Q) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a −3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be −95.27 ppm/°C and 57.5 ppb/°C2 for resonant mode A, and −95.43 ppm/°C and 55.8 ppb/°C2 for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient (kt2) were extracted and are reported. Device Q decreased to 334 and total kt2 increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.

Finite Element Analysis of Aluminum Nitride Bimorph Actuators – The Influence of Contact Geometry and Position

2008 ◽  
Vol 1129 ◽  
Author(s):  
V. R. Pagán ◽  
D Korakakis
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Aluminum Nitride ◽  
Electromechanical Coupling ◽  
Microelectromechanical Systems ◽  
Contact Geometry ◽  
Electromechanical Coupling Coefficient ◽  
Static Case ◽  
Element Analysis ◽  
Converse Piezoelectric Effect

AbstractIn this work, the results of 3-dimensional finite element analysis (FEA) of Aluminum Nitride (AlN) homogeneous bimorphs (d31 mode) are shown. The coupled-field FEA simulations were performed using the commercially available software tool ANSYS. The effect of altering the contact geometry and position on the displacement, electric field, stress, and strain distributions for the static case is reported.Piezoelectric beams are commonly used in microelectromechanical systems (MEMS) and also have many possible applications in smart sensor and actuator systems. For example, they have been used as the active element in microfluidic and microactuator MEMS devices. In the actuator mode, they employ the converse piezoelectric effect to couple electrical energy into mechanical deformation. Aluminum Nitride (AlN) based devices have attracted much interest because AlN is a piezoelectric material with high thermal stability, high dielectric strength, a reasonable electromechanical coupling coefficient, and a perfect compatibility with standard silicon processing techniques.

Efficiency Characterization of Piezoelectrics for Power

2004 ◽  
Author(s):  
J. H. Cho ◽  
J. C. Raupp ◽  
P. D. Hayenga ◽  
R. F. Richards ◽  
D. F. Bahr ◽  
...  
Keyword(s):  
Energy Conversion ◽  
Quality Factor ◽  
Coupling Coefficient ◽  
Electromechanical Coupling ◽  
Electromechanical Coupling Coefficient ◽  
Piezoelectric Cantilever ◽  
Quality Factor Q ◽  
Piezoelectric Devices

The efficiency of energy conversion by piezoelectric devices depends upon the quality factor Q, and electromechanical coupling coefficient k2. Efficiency, Q, and k2 were measured for a piezoelectric cantilever and piezoelectric stack, and compared to a model of the efficiency in terms of Q and k2. The model and experiment agree very well.

Selective Band Gap to Suppress the Spurious Acoustic Mode in Film Bulk Acoustic Resonator Structures

2018 ◽  
Vol 140 (3) ◽  
Author(s):  
Rafik Serhane ◽  
Fayçal Hadj-Larbi ◽  
Abdelkader Hassein-Bey ◽  
Abdelkrim Khelif
Keyword(s):  
Band Gap ◽  
Electromechanical Coupling ◽  
Lamb Waves ◽  
Phononic Crystal ◽  
Longitudinal Mode ◽  
Acoustic Resonator ◽  
Electromechanical Coupling Coefficient ◽  
Spurious Mode ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk

In this work, we investigate numerically the propagation of Lamb waves in a film bulk acoustic resonator (FBAR) structure formed by piezoelectric ZnO layer sandwiched between two Mo electrodes coupled with Bragg reflectors; the system is thus considered as a phononic-crystal (PnC) plate. The aim is to suppress the first-order symmetric Lamb wave mode considered as a spurious mode caused by the establishment of a lateral standing wave due to the reflection at the embedded lateral extremities of the structure; this spurious mode is superposing to the main longitudinal mode resonance of the FBAR. The finite element study, using harmonic and eigen-frequency analyses, is performed on the section of FBAR structure coupled with the PnC. In the presence of PnC, the simulation results show the evidence of a selective band gap where the parasitic mode is prohibited. The quality factor of the FBAR is enhanced by the introduction of the PnC. Indeed, the resonance and antiresonance frequencies passed from 1000 and 980 (without PnC) to 2350 and 1230 (with PnC), respectively. This is accompanied by a decrease in the electromechanical coupling coefficient from 10.60% to 6.61%.

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