scholarly journals Design of an Edge-Detection CMOS Image Sensor with Built-in Mask Circuits

Sensors ◽  
2020 ◽  
Vol 20 (13) ◽  
pp. 3649
Author(s):  
Minhyun Jin ◽  
Hyeonseob Noh ◽  
Minkyu Song ◽  
Soo Youn Kim

In this paper, we propose a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) that has built-in mask circuits to selectively capture either edge-detection images or normal 8-bit images for low-power computer vision applications. To detect the edges of images in the CIS, neighboring column data are compared in in-column memories after column-parallel analog-to-digital conversion with the proposed mask. The proposed built-in mask circuits are implemented in the CIS without a complex image signal processer to obtain edge images with high speed and low power consumption. According to the measurement results, edge images were successfully obtained with a maximum frame rate of 60 fps. A prototype sensor with 1920 × 1440 resolution was fabricated with a 90-nm 1-poly 5-metal CIS process. The area of the 4-shared 4T-active pixel sensor was 1.4 × 1.4 µm2, and the chip size was 5.15 × 5.15 mm2. The total power consumption was 9.4 mW at 60 fps with supply voltages of 3.3 V (analog), 2.8 V (pixel), and 1.2 V (digital).

Sensors ◽  
2021 ◽  
Vol 21 (11) ◽  
pp. 3713
Author(s):  
Soyeon Lee ◽  
Bohyeok Jeong ◽  
Keunyeol Park ◽  
Minkyu Song ◽  
Soo Youn Kim

This paper presents a CMOS image sensor (CIS) with built-in lane detection computing circuits for automotive applications. We propose on-CIS processing with an edge detection mask used in the readout circuit of the conventional CIS structure for high-speed lane detection. Furthermore, the edge detection mask can detect the edges of slanting lanes to improve accuracy. A prototype of the proposed CIS was fabricated using a 110 nm CIS process. It has an image resolution of 160 (H) × 120 (V) and a frame rate of 113, and it occupies an area of 5900 μm × 5240 μm. A comparison of its lane detection accuracy with that of existing edge detection algorithms shows that it achieves an acceptable accuracy. Moreover, the total power consumption of the proposed CIS is 9.7 mW at pixel, analog, and digital supply voltages of 3.3, 3.3, and 1.5 V, respectively.


Sensors ◽  
2020 ◽  
Vol 20 (11) ◽  
pp. 3101
Author(s):  
Jaihyuk Choi ◽  
Sungjae Lee ◽  
Youngdoo Son ◽  
Soo Youn Kim

This paper presents an always-on Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) using an analog convolutional neural network for image classification in mobile applications. To reduce the power consumption as well as the overall processing time, we propose analog convolution circuits for computing convolution, max-pooling, and correlated double sampling operations without operational transconductance amplifiers. In addition, we used the voltage-mode MAX circuit for max pooling in the analog domain. After the analog convolution processing, the image data were reduced by 99.58% and were converted to digital with a 4-bit single-slope analog-to-digital converter. After the conversion, images were classified by the fully connected processor, which is traditionally performed in the digital domain. The measurement results show that we achieved an 89.33% image classification accuracy. The prototype CIS was fabricated in a 0.11 μm 1-poly 4-metal CIS process with a standard 4T-active pixel sensor. The image resolution was 160 × 120, and the total power consumption of the proposed CIS was 1.12 mW with a 3.3 V supply voltage and a maximum frame rate of 120.


Sensors ◽  
2020 ◽  
Vol 20 (4) ◽  
pp. 1086 ◽  
Author(s):  
Manabu Suzuki ◽  
Yuki Sugama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa

In this paper, a prototype ultra-high speed global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with pixel-wise trench capacitor memory array achieving over 100 million frames per second (fps) with up to 368 record length by burst correlated double sampling (CDS) operation is presented. Over 100 Mfps high frame rate is obtained by reduction of pixel output load by the pixel-wise memory array architecture and introduction of the burst CDS operation which minimizes the pixel driving pulse transitions. Long record length is realized by high density analog memory integration with Si trench capacitors. A maximum 125 Mfps frame rate with up to 368 record length video capturing was confirmed under room temperature without any cooling system. The photoelectric conversion characteristics of the burst CDS operation were measured and compared with those of the conventional CDS operation.


2019 ◽  
Vol 8 (3) ◽  
pp. 5966-5970

In this proposed work, a low offset voltage (mV) and high speed voltage comparator circuit is designed and simulated. With the unceasing rise of various wireless portable communication systems, high speed transceiver circuits, and high speed memory circuit design, sensitized sensor technologies, and wireless sensor network design, the design of high speed, low offset voltage and low power operated comparators are indispensable blocks in the design of a very good analog to digital converter architecture. The proposed work does not entail the usage of any pre-amplification stages, which accounts for the direct reduction of current consumption and silicon area. The MOSFETs at the input differential pair stage of the CMOS comparator circuit are designed to operate in near sub-threshold region rather than in saturation region to account for the low power consumption. The proposed double tail dynamic latched comparator in this work is implemented in 90μm CMOS technology with the operating power supply voltage (VDD) of 1.2 V and sampling frequency of 600 MHz using Microwind EDA tool. The simulated results indicate that the total power consumption is calculated to be of the order of 126.3μw with the delay of 876ps. From the obtained results, the proposed double tail dynamic latched circuit has considerably lowered both the propagation delay time and power consumption, when compared to the previous works.


2018 ◽  
Vol 26 (4) ◽  
pp. 172-184
Author(s):  
Muthna Jasim Fadhil

In modern systems communication, different methods have been improved to change the prior imitative techniques that process communication data with high speed. It is necessary to improve (OFDM) Orthogonal Frequency Division Multiplexing technique because the development in the guideline communication of wireless system which include security data and transmission data reliability. The applications communications of wireless is important to develop in order to optimize the process of communication leads to reduce the level consumption energy of the output level signal. The architecture of VLSI is used to optimize the performance transceiver in 802.11 n OFDM-MIMO systems, this idea concentrate on the design of 6x6 MIMO_OFDM system in software simulink of MATLAB then using generator system for transfer to code of VHDL and applying in FPGA Xilinx Spartan 3 XC3S200 . The modelsim used to get the simulation while Xilinx power estimator is used to calculate power. The results registered total power consumption about 94mW while compared with previous work  was 136mW which means a high reduction of about 30.8% .


Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1429 ◽  
Author(s):  
Jin-Fa Lin ◽  
Cheng-Yu Chan ◽  
Shao-Wei Yu

In this paper, a novel latch-adder based multiplier design, targeting low voltage and low power IoT applications is presented. It employs a semi-dynamic (dynamic circuit with static keeper circuit) full adder design which efficiently incorporates the level sensitive latch circuit with the adder cell. Latch circuit control signals are generated by a chain of delay cell circuits. They are applied to each row of the adder array. This row-wise alignment ensures an orderly procedure, while successfully removing spurious switching resulting in reduced power consumption. Due to the delay cell circuit of our design is also realized by using full adder. Therefore, it is unnecessary to adjust the transistor sizes of the delay cell circuit deliberately. Post-layout simulation results on 8 × 8 multiplier design show that the proposed design has the lowest power consumption of all design candidates. The total power consumption saving compared to conventional array multiplier designs is up to 38.6%. The test chip measurement shows successful operations of our design down to 0.41 V with a power consumption of only 427 nW with a maximum frequency 500 KHz.


2020 ◽  
Vol 10 (11) ◽  
pp. 2745-2753
Author(s):  
Jimin Cheon ◽  
Dongmyung Lee ◽  
Hojong Choi

An active pixel sensor (APS) in a digital X-ray detector is the dominant circuitry for a CMOS image sensor (CIS) despite its lower fill factor (FF) compared to that of a passive pixel sensor (PPS). Although the PPS provides higher FF, its overall signal-to-noise ratio (SNR) is lower than that of the APS. The required high resolution and small focal plane can be achieved by reducing the number of transistors and contacts per pixel. We proposed a novel passive pixel array and a high precision current amplifier to improve the dynamic range (DR) without minimizing the sensitivity for diagnostic compact digital X-ray detector applications. The PPS can be an alternative to improve the FF. However, size reduction of the feedback capacitor causes degradation of SNR performance. This paper proposes a novel PPS based on readout and amplification circuits with a high precision current amplifier to minimize performance degradation. The expected result was attained with a 0.35-μm CMOS process parameter with power supply voltage of 3.3 V. The proposed PPS has a saturation signal of 1.5 V, dynamic range of 63.5 dB, and total power consumption of 13.47 mW. Therefore, the proposed PPS readout circuit improves the dynamic range without sacrificing the sensitivity.


1996 ◽  
Vol 07 (02) ◽  
pp. 305-322
Author(s):  
KAI-YUAN CHAO ◽  
D. F. WONG

In this paper, a floorplanner for low power design is presented. Our objective is to optimize total power consumption and area during the selection and placement of various implementations for circuit modules. Furthermore, the proposed method considers performance requirements, power line noises, and distribution of power consumption in order to generate lower and evenly distributed power dissipation over the resulting circuit floorplan with a specified performance. For a set of benchmark circuits we tested, on the average, our floorplanner can achieve decreases of total power consumption, wire-length, and power/ground network size by 18.3%, 4.6%, and 24%, respectively, at the cost of an area increase of 8.8% when compared with an existing area/wire-length driven floorplanner.


2019 ◽  
Vol 25 (6) ◽  
pp. 35-39
Author(s):  
Libor Chrastecky ◽  
Jaromir Konecny ◽  
Martin Stankus ◽  
Michal Prauzek

This article describes implementation possibilities of specialized microcontroller peripherals, as hardware solution for Internet of Things (IoT) low-power communication, interfaces. In this contribution, authors use the NXP FlexIO periphery. Meanwhile, RFC1662 is used as a reference communication standard. Implementation of RFC1662 is performed by software and hardware approaches. The total power consumption is measured during experiments. In the result section, authors evaluate a time-consumption trade-off between the software approach running in Central Processing Unit (CPU) and hardware implementation using NXP FlexIO periphery. The results confirm that the hardware-based approach is effective in terms of power consumption. This method is applicable in IoT embedded devices.


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