scholarly journals Sensors Auto-calibration Method - Using Programmable Interface Circuit Front-end

Sensors ◽  
2003 ◽  
Vol 3 (10) ◽  
pp. 491-497 ◽  
Author(s):  
M. Kouider ◽  
M. Nadi ◽  
D. Kourtiche
2021 ◽  
Vol 11 (2) ◽  
pp. 22
Author(s):  
Umberto Ferlito ◽  
Alfio Dario Grasso ◽  
Michele Vaiana ◽  
Giuseppe Bruno

Charge-Based Capacitance Measurement (CBCM) technique is a simple but effective technique for measuring capacitance values down to the attofarad level. However, when adopted for fully on-chip implementation, this technique suffers output offset caused by mismatches and process variations. This paper introduces a novel method that compensates the offset of a fully integrated differential CBCM electronic front-end. After a detailed theoretical analysis of the differential CBCM topology, we present and discuss a modified architecture that compensates mismatches and increases robustness against mismatches and process variations. The proposed circuit has been simulated using a standard 130-nm technology and shows a sensitivity of 1.3 mV/aF and a 20× reduction of the standard deviation of the differential output voltage as compared to the traditional solution.


2022 ◽  
Vol 355 ◽  
pp. 01014
Author(s):  
Fuan Sun ◽  
Zheng Liu ◽  
Huifeng Liu

Normally, most researches on phase calibration of shipborne USB system focus on the means of phase calibration. This article starts with the research on the channel of the system. The composition of the channel is introduced, and the characteristics of the channel is analyzed. Taking the channel of the field effect amplifier front-end as the research object, a mathematical fitting algorithm is used to derive the functional relationship between the phase of the field effect amplifier front-end and the working frequency. The actual calibration data is used for simulation analysis to obtain the fitting order of the function. Combining the phase-frequency relationship of the field effect amplifier front-end and the microwave self-checking phase correction of the field effect amplifier back-end, a new phase calibration method is proposed.


2019 ◽  
Vol 33 (08) ◽  
pp. 1950085 ◽  
Author(s):  
Xiangyu Li ◽  
Jianping Hu ◽  
Xiaowei Liu

A closed-loop high-precision front-end interface circuit in a standard 0.35 [Formula: see text]m CMOS technology for a tunneling magneto-resistance (TMR) sensor is presented in this paper. In consideration of processing a low frequency and weak geomagnetic signal, a low-noise front-end detection circuit is proposed with chopper technique to eliminate the 1/f noise and offset of operational amplifier. A novel ripple suppression loop is proposed for eliminating the ripple in a tunneling magneto-resistance sensor interface circuit. Even harmonics is eliminated by fully differential structure. The interface is fabricated in a standard 0.35 [Formula: see text]m CMOS process and the active circuit area is about [Formula: see text]. The interface chip consumes 7 mW at a 5 V supply and the 1/f noise corner frequency is lower than 1 Hz. The interface circuit of TMR sensors can achieve a better noise level of [Formula: see text]. The ripple can be suppressed to less than 10 [Formula: see text]V by ripple suppression loop.


Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 675 ◽  
Author(s):  
Xiangyu Li ◽  
Jianping Hu ◽  
Xiaowei Liu

Micro-electromechanical system (MEMS) accelerometers are widely used in the inertial navigation and nanosatellites field. A high-performance digital interface circuit for a high-Q MEMS micro-accelerometer is presented in this work. The mechanical noise of the MEMS accelerometer is decreased by the application of a vacuum-packaged sensitive element. The quantization noise in the baseband of the interface circuit is greatly suppressed by a 4th-order loop shaping. The digital output is attained by the interface circuit based on a low-noise front-end charge-amplifier and a 4th-order Sigma-Delta (ΣΔ) modulator. The stability of high-order ΣΔ was studied by the root locus method. The gain of the integrators was reduced by using the proportional scaling technique. The low-noise front-end detection circuit was proposed with the correlated double sampling (CDS) technique to eliminate the 1/f noise and offset. The digital interface circuit was implemented by 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology. The high-performance digital accelerometer system was implemented by double chip integration and the active interface circuit area was about 3.3 mm × 3.5 mm. The high-Q MEMS accelerometer system consumed 10 mW from a single 5 V supply at a sampling frequency of 250 kHz. The micro-accelerometer system could achieve a third harmonic distortion of −98 dB and an average noise floor in low-frequency range of less than −140 dBV; a resolution of 0.48 μg/Hz1/2 (@300 Hz); a bias stability of 18 μg by the Allen variance program in MATLAB.


2011 ◽  
Vol 483 ◽  
pp. 508-512
Author(s):  
Hai Xi Lu ◽  
Yong Ping Xu ◽  
Shou Rong Wang

A CMOS integrated interface circuit for micro-machined gyroscope containing a novel front-end and 6th-order Sigma-delta modulator is presented in this paper. To reduce the noise coming from the sensor and circuit, the front-end is accomplished by a switched-capacitor architecture, which constructed by a high-gain fully-differential amplifier and improved by chopper-stabilization technique, and work under a designed charging and sampling logic scheme. A cascade 6th-order Sigma-Delta modulator is designed to get high resolution, reduce quantized error and suppress the instability brought by high-order modulator. With the cascade structure and 16-bit resolution 32 OSR, the modulator outputs 3-bits digital stream. The whole circuit is designed with AMS technique and 3.3V power consumption. The simulation result presents that the interface circuit performs a appointed under a low-noise design specification in signal band, and the SNR of the circuit achieves remarkable value of 106dB.


This paper describes an antenna proximity sensor for mobile and applications based on the measured reflection coefficient using a bidirectional coupler. A bidirectional coupler which uses forward and reverse parameters is located between radiated antenna and RFFE (RF Front-End). The measured reflection coefficient proved high chances to act as an antenna sensor. The proposed antenna proximity sensor showed excellent performance and some of the test results with Samsung smartphone are attached to prove it.


2013 ◽  
Vol 7 (12) ◽  
Author(s):  
Nebyu Yonas Sutri ◽  
John Ojur Dennis ◽  
Mohd Haris Md Khir ◽  
Muhammad Umer Mian ◽  
Tong Boon Tang

Sensors ◽  
2020 ◽  
Vol 20 (4) ◽  
pp. 1041
Author(s):  
Xiangyu Li ◽  
Jianping Hu ◽  
Xiaowei Liu

The tunneling magnetoresistance micro-sensors (TMR) developed by magnetic multilayer material has many advantages, such as high sensitivity, high frequency response, and good reliability. It is widely used in military and civil fields. This work presents a high-performance interface circuit for TMR sensors. Because of the nonlinearity of signal conversion between sensitive structure and interface circuit in feedback loop and forward path, large harmonic distortion occurs in output signal spectrum, which greatly leads to the reduction of SNDR (signal noise distortion rate). In this paper, we analyzed the main source of harmonic distortion in closed-loop detection circuit and establish an accurate harmonic distortion model in TMR micro-sensors system. Some factors are considered, including non-linear gain of operational amplifier unit, effective gain bandwidth, conversion speed, nonlinearity of analog transmission gate, and nonlinearity of polycrystalline capacitance in high-order sigma-delta system. We optimized the CMOS switch and first-stage integrator in the switched-capacitor circuit. The harmonic distortion parameter is optimally designed in the TMR sensors system, aiming at the mismatch of misalignment of front-end system, non-linearity of quantizer, non-linearity of capacitor, and non-linearity of analog switch. The digital output is attained by the interface circuit based on a low-noise front-end interface circuit and a third-order sigma-delta modulator. The digital interface circuit is implemented by 0.35μm CMOS (complementary metal oxide semiconductor) technology. The high-performance digital TMR sensors system is implemented by double chip integration and the active interface circuit area is about 3.2 × 2 mm. The TMR sensors system consumes 20 mW at a single 5 V supply voltage. The TMR sensors system can achieve a linearity of 0.3% at full scale range (±105 nT) and a resolution of 0.25 nT/Hz1/2(@1Hz).


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