scholarly journals Catalysis Mediated by 2D Black Phosphorus Either Pristine or Decorated with Transition Metals Species

Surfaces ◽  
2020 ◽  
Vol 3 (2) ◽  
pp. 132-167
Author(s):  
Matteo Vanni ◽  
Maria Caporali ◽  
Manuel Serrano-Ruiz ◽  
Maurizio Peruzzini

Among the novel class of mono-elemental two-dimensional (2D) materials, termed Xenes, phosphorene is emerging as a great promise for its peculiar chemical and physical properties. This review collects a selection of the recent breakthroughs that are related to the application of phosphorene in catalysis and electrocatalysis. Noteworthy, thanks to its intrinsic Lewis basic character, pristine phosphorene turned out to be more efficient and more selective than other non-metal catalysts, in chemical processes as the electroreduction of nitrogen to ammonia or the alkylation of nucleophiles with esters. Once functionalized with transition metals nanoparticles (Co, Ni, Pd, Pt, Ag, Au), its catalytic activity has been evaluated in several processes, mainly hydrogen and oxygen evolution reactions. Under visible light irradiation, it has shown a great improvement of the activity, demonstrating high potential as a photocatalyst.

2018 ◽  
Vol 6 (22) ◽  
pp. 10226-10232 ◽  
Author(s):  
Yangfan Shao ◽  
Mengmeng Shao ◽  
Yoshiyuki Kawazoe ◽  
Xingqiang Shi ◽  
Hui Pan

The development of two-dimensional (2D) materials with high conductivity and catalytic activity is important for the proposed hydrogen economy.


2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Ming Xia

Two-dimensional (2D) materials, such as graphene and MoS2, have been attracting wide interest in surface enhancement Raman spectroscopy. This perspective gives an overview of recent developments in 2D materials’ application in surface-enhanced Raman spectroscopy. This review paper focuses on the applications of using bare 2D materials and metal/2D material hybrid substrate for Raman enhancement. The Raman enhancing mechanism of 2D materials will also be discussed. The progress covered herein shows great promise for widespread adoption of 2D materials in SERS application.


Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5213
Author(s):  
Oliver Dubnack ◽  
Frank A. Müller

The possibility of producing stable thin films, only a few atomic layers thick, from a variety of materials beyond graphene has led to two-dimensional (2D) materials being studied intensively in recent years. By reducing the layer thickness and approaching the crystallographic monolayer limit, a variety of unexpected and technologically relevant property phenomena were observed, which also depend on the subsequent arrangement and possible combination of individual layers to form heterostructures. These properties can be specifically used for the development of multifunctional devices, meeting the requirements of the advancing miniaturization of modern manufacturing technologies and the associated need to stabilize physical states even below critical layer thicknesses of conventional materials in the fields of electronics, magnetism and energy conversion. Differences in the structure of potential two-dimensional materials result in decisive influences on possible growth methods and possibilities for subsequent transfer of the thin films. In this review, we focus on recent advances in the rapidly growing field of two-dimensional materials, highlighting those with oxidic crystal structure like perovskites, garnets and spinels. In addition to a selection of well-established growth techniques and approaches for thin film transfer, we evaluate in detail their application potential as free-standing monolayers, bilayers and multilayers in a wide range of advanced technological applications. Finally, we provide suggestions for future developments of this promising research field in consideration of current challenges regarding scalability and structural stability of ultra-thin films.


2020 ◽  
Vol 20 (9) ◽  
pp. 5533-5538
Author(s):  
Cihan Kuru ◽  
Mirac Alaf ◽  
Yunus E. Simsek

Recently, Mo-based materials have emerged as promising candidates to replace Pt catalysts for hydrogen evolution reaction. Among these, MoO2 holds a great promise due to its metallic conductivity. Here, we investigate the effect of V doping on the hydrogen evolution reaction activity of MoO2 thin films. V doped MoO2 thin films with different dopant concentrations were prepared on conductive Si substrates by co-sputtering followed by thermal sulfurization. The electrochemical measurements revealed that V doping has an adverse effect on the hydrogen evolution reaction performance of MoO2 films, attributed to the p-type doping nature of V. This study gives insight into the effect of dopant type on the catalytic activity of hydrogen evolution reaction catalysts and provides a hint for the correct selection of dopant elements to enhance the activity of the existing catalyst materials.


Nanoscale ◽  
2021 ◽  
Author(s):  
Yufang Yao ◽  
Nanxi Miao ◽  
Yutong Gong ◽  
Junjie Wang

The newly discovered hexagonal MAB (h-MAB) phases have shown great promise in synthesizing 2-D borides, but a wide application is hindered by the limited kinds of transition metals that can...


1996 ◽  
Vol 8 (3) ◽  
pp. 133-144 ◽  
Author(s):  
María del Mar del Pozo Andrés ◽  
Jacques F A Braster

In this article we propose two research techniques that can bridge the gap between quantitative and qualitative historical research. These are: (1) a multiple regression approach that gives information about general patterns between numerical variables and the selection of outliers for qualitative analysis; (2) a homogeneity analysis with alternating least squares that results in a two-dimensional picture in which the relationships between categorical variables are graphically presented.


2017 ◽  
Author(s):  
Varun Bheemireddy

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>


Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 87-95
Author(s):  
M. S. Baranava ◽  
P. A. Praskurava

The search for fundamental physical laws which lead to stable high-temperature ferromagnetism is an urgent task. In addition to the already synthesized two-dimensional materials, there remains a wide list of possible structures, the stability of which is predicted theoretically. The article suggests the results of studying the electronic properties of MAX3 (M = Cr, Fe, A = Ge, Si, X = S, Se, Te) transition metals based compounds with nanostructured magnetism. The research was carried out using quantum mechanical simulation in specialized VASP software and calculations within the Heisenberg model. The ground magnetic states of twodimensional MAX3 and the corresponding energy band structures are determined. We found that among the systems under study, CrGeTe3 is a semiconductor nanosized ferromagnet. In addition, one is a semiconductor with a bandgap of 0.35 eV. Other materials are antiferromagnetic. The magnetic moment in MAX3 is localized on the transition metal atoms: in particular, the main one on the d-orbital of the transition metal atom (and only a small part on the p-orbital of the chalcogen). For CrGeTe3, the exchange interaction integral is calculated. The mechanisms of the formation of magnetic order was established. According to the obtained exchange interaction integrals, a strong ferromagnetic order is formed in the semiconductor plane. The distribution of the projection density of electronic states indicates hybridization between the d-orbital of the transition metal atom and the p-orbital of the chalcogen. The study revealed that the exchange interaction by the mechanism of superexchange is more probabilistic.


2021 ◽  
Vol 16 ◽  
Author(s):  
Joice Sophia Ponraj ◽  
Muniraj Vignesh Narayanan ◽  
Ranjith Kumar Dharman ◽  
Valanarasu Santiyagu ◽  
Ramalingam Gopal ◽  
...  

: Increasing energy crisis across the globe requires immediate solutions. Two-dimensional (2D) materials are in great significance because of its application in energy storage and conversion devices but the production process significantly impacts the environment thereby posing a severe problem in the field of pollution control. Green synthesis method provides an eminent way of reduction in pollutants. This article reviews the importance of green synthesis in the energy application sector. The focus of 2D materials like graphene, MoS2, VS2 in energy storage and conversion devices are emphasized based on supporting recent reports. The emerging Li-ion batteries are widely reviewed along with their promising alternatives like Zn, Na, Mg batteries and are featured in detail. The impact of green methods in the energy application field are outlined. Moreover, future outlook in the energy sector is envisioned by proposing an increase in 2D elemental materials research.


Author(s):  
Xiaoqiu Guo ◽  
Ruixin Yu ◽  
Jingwen Jiang ◽  
Zhuang Ma ◽  
Xiuwen Zhang

Topological insulation is widely predicted in two-dimensional (2D) materials realized by epitaxial growth or van der Waals (vdW) exfoliation. Such 2D topological insulators (TI’s) host many interesting physical properties such...


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