The Research on Static Characteristics of 1700V/100A Planner NPT-IGBT

2013 ◽  
Vol 433-435 ◽  
pp. 1572-1577
Author(s):  
Ming Chao Gao ◽  
Jun Liu ◽  
Ge Zhao ◽  
Jiang Liu ◽  
Rui Jin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
Process Simulation ◽  
Cell Structure ◽  
Test Results ◽  
Static Characteristics ◽  
Injection Dose ◽  
Simulation Results

A 1700V/100A NPT-IGBT was designed by process simulation, which had an internal transparent collector and a planner cell structure. The Static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose or the drive-in time of the p-well. The saturation voltage of the device can be adjusted by changing injection dose of the p-well or the internal transparent collector. This device was fabricated using a self-aligned process, the test results show that the breakdown voltage is more than 2100V, the saturation voltage is between 2.5V and 2.7V and the threshold voltage is between 3.9V and 5.9V, which are similar with the simulation results.

The Research on Static Characteristics of 3300V/50A Planner NPT-IGBT

2014 ◽  
Vol 568-570 ◽  
pp. 1201-1206
Author(s):  
Jun Liu ◽  
Hai Long Bao ◽  
Jiang Liu ◽  
Ge Zhao ◽  
Ming Chao Gao ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
Process Simulation ◽  
Cell Structure ◽  
Test Results ◽  
Static Characteristics ◽  
Injection Dose ◽  
Simulation Results

A 3300V/50A NPT-IGBT was designed by process simulation, which had an internal transparent collector and a planner cell structure. The Static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose of the p-well. The saturation voltage of the device can be adjusted by changing injection dose of the p-well or the internal transparent collector. This device was fabricated using a self-aligned process, the test results show that the breakdown voltage is more than 4300V, the saturation voltage is between 3.4V and 3.7V and the threshold voltage is between 5.2V and 6.5V, which are similar with the simulation results.

Analysis Approach on DMOS Transistor Vth Mismatch Due to Trapped Charges

2015 ◽  
Author(s):  
Hashim Ismail ◽  
Ang Chung Keow ◽  
Kenny Gan Chye Siong
Keyword(s):  
Failure Analysis ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Analysis Approach ◽  
Test Results ◽  
Root Cause ◽  
Switching Event ◽  
Output Transistor ◽  
Event Based ◽  
Trapped Charge

Abstract An output switching malfunction was reported on a bridge driver IC. The electrical verification testing revealed evidence of an earlier over current condition resulting from an abnormal voltage sense during a switching event. Based on these test results, we developed the hypothesis that a threshold voltage mismatch existed between the sense transistor and the output transistor. This paper describes the failure analysis approach we used to characterize the threshold voltage mismatch as well as our approach to determine the root cause, which was trapped charge on the gate oxide of the sense transistor.

Pengembangan Instrumen Penilaian Kinerja pada Praktikum Struktur dan Fungsi Sel Di SMA Negeri 1 Kota Jambi

2016 ◽  
Vol 5 (2) ◽  
Author(s):  
Nugroho Budhiwaluyo ◽  
Rayandra Asyhar ◽  
Bambang Hariyadi
Keyword(s):  
Performance Assessment ◽  
Student Performance ◽  
Cell Structure ◽  
Structure And Function ◽  
Assessment Instrument ◽  
Product Performance ◽  
Development Model ◽  
Test Results ◽  
Validity And Reliability ◽  
And Function

  This research aims to produce a final product in the form of a performance-assessment instrument on Cell Structure and Function experiment. The development model is ADDIE. Based on expert's judgment, the instrument was valid and can be tested in the field. Field-test results shown that the product performs high validity and reliability value on measuring student performance on Cell Structure and Function experiment. Therefore, it is concluded that this performance-assessment instrument theoretically and practically has a good quality for measuring student performance in both process and product performance on Cell Structure and Function experiment. Keywords: Development, Performance-Assessment Instrument, Cell Structure and Function Experiment 

Modeling and Design of Permanent Magnet Vibration-to-Electrical Power Generator’s Induction Coil

2012 ◽  
Vol 588-589 ◽  
pp. 614-617
Author(s):  
Zhi Hua Wang ◽  
Mei Ling Li ◽  
Jian Zhang ◽  
Li Wang ◽  
Yong Xu
Keyword(s):  
Permanent Magnet ◽  
Electrical Power ◽  
Induction Coil ◽  
Test Results ◽  
Coil Design ◽  
Sinusoidal Vibration ◽  
Electrical Generator ◽  
Simulation Results ◽  
Peak Value

The Equivalent Turn Number of Coil (ETNC) is proposed for induction coil design. Simulation results show that the vibrationonthe induction coil’s structure. The optimized coil is composed by two symmetry parts on the condition of sinusoidal vibration. The effective value of output EMF of optimized coil increases 51.39% than uniform coil’s. In the experiment, the optimized and uniform coils are fabricated with 600 turns and comparatively studied in the same vibration-to-electrical generator. The test results show that the peak-to-peak value and effective value of output EMF of the optimized coil can increase up to 52.59% and 48.76%, respectively, compared with the uniform coil.

scholarly journals Experiment and simulation about the effect of wear-ring abrasion on the performance of a marine centrifugal pump

2021 ◽  
Vol 13 (2) ◽  
pp. 168781402199811
Author(s):  
Wu Xianfang ◽  
Du Xinlai ◽  
Tan Minggao ◽  
Liu Houlin
Keyword(s):  
Numerical Simulation ◽  
Centrifugal Pump ◽  
Pressure Pulsation ◽  
Vibration Velocity ◽  
Test Results ◽  
Obvious Effect ◽  
Performance Change ◽  
Pump Test ◽  
Simulation Results ◽  
Axis Passing

The wear-ring abrasion can cause performance degradation of the marine centrifugal pump. In order to study the effect of front and back wear-ring clearance on a pump, test and numerical simulation were used to investigate the performance change of a pump. The test results show that the head and efficiency of pump decrease by 3.56% and 9.62% respectively at 1.0 Qd due to the wear-ring abrasion. Under 1.0 Qd, with the increase of the front wear-ring the vibration velocity at pump foot increases from 0.4 mm/s to 1.0 mm/s. The axis passing frequency (APF) at the measuring points increases significantly and there appears new characteristic frequency of 3APF and 4APF. The numerical simulation results show that the front wear-ring abrasion affects the flow at the inlet of the front chamber of the pump and impeller passage. And the back wear-ring abrasion has obvious effect on the flow in the back chamber of the pump and impeller passage, while the multi-malfunction of the front wear-ring abrasion and back wear-ring abrasion has the most obvious effect on the flow velocity and flow stability inside pump. The pressure pulsation at Blade Passing Frequency (BPF) of the three schemes all decrease with the increase of the clearance.

A Bandgap Reference with Temperature Coefficient of 13.2 ppm/°C

2014 ◽  
Vol 981 ◽  
pp. 66-69
Author(s):  
Ming Yuan Ren ◽  
En Ming Zhao
Keyword(s):  
Power Supply ◽  
Process Simulation ◽  
Output Voltage ◽  
Operating Temperature ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Analysis Method ◽  
Operation Condition ◽  
Reference Circuit ◽  
Simulation Results

This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.239V in the typical operation condition. The variance rate of output voltage is 0.016mV/°C? with the operating temperature varying from-60°C? to 160°C?. And it is 3.27mV/V with the power supply changes from 1.8V to 3.3V.

Non-Linear Analysis and Modeling of the Structure with Bolted Joints

2015 ◽  
Vol 656-657 ◽  
pp. 694-699
Author(s):  
Xin Liao ◽  
Jian Run Zhang ◽  
Dong Lu
Keyword(s):  
Dynamic Stiffness ◽  
Element Model ◽  
Outer Radius ◽  
Bolted Joints ◽  
Structure Model ◽  
Test Results ◽  
Bolted Joint ◽  
Joint Structure ◽  
Non Linear ◽  
Simulation Results

In this study, a non-linear finite element model for a simplified single-bolted joint structure model is built. Static analysis on the structure under different shear force and pretension effect is done, and the non-linear contact behavior is analyzed. Through comparing datum, it is found that interface area of each bolted joint region can be described an annular region around bolt hole, whose outer radius has increased by 85% compared with radius of bolt hole. Also, the frequency responses of the multi-bolted joint structure under sinusoidal excitation are investigated. Simulation results show that the resonance regions basically remain unchanged in different pretension effect and the largest amplitude will increase with the increasing preloads. Finally, the vibration experiments are conducted. Interface nonlinear affect dynamic stiffness considerably. The test results illustrate that dynamic behaviors of bolted joint agree with the simulation results and the proposed non-linear contact model was reasonable.

scholarly journals An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 573 ◽  
Author(s):  
Hujun Jia ◽  
Mei Hu ◽  
Shunwei Zhu
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

Development of Three-Dimensional Parametric Modeling for Milling Process Simulation

2010 ◽  
Vol 139-141 ◽  
pp. 1178-1183
Author(s):  
Jing Sheng ◽  
Guang Guo Zhang ◽  
Hong Hua Zhang
Keyword(s):  
3D Modeling ◽  
Process Simulation ◽  
Three Dimensional ◽  
Milling Process ◽  
Parametric Modeling ◽  
Machining Simulation ◽  
Metal Machining ◽  
Simulation Results ◽  
Key Techniques ◽  
Access Data

Metal machining simulation using finite element method (FEM) is extraordinarily complex. It is essential to develop a system so as to construct simulation model and obtain valuable results conveniently and rapidly. This study developed a parametric modeling based on MSC.Marc software, which included the key techniques of three-dimensional (3D) modeling and the parametric modeling course of metal milling process. In addition, an explanation facility based on the procedure file, which could be run automatically, was performed according to a modeling procedure. The interface of the system designed using Builder, could access data, which included the geometric angles and the dimensions of a tool and a workpiece, the relative position between them, their properties and cutting conditions, etc.. Calling the procedure file, the system approached the parametric modeling. An example was given, which simulation results indicated that it is an effective methodology to develop 3D parametric modeling.

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