Deposition of Fluorocarbon Films by RF Magnetron Sputtering at Varying Target-Substrate Distance

2011 ◽  
Vol 50-51 ◽  
pp. 589-593 ◽  
Author(s):  
Zeng Ji Liu ◽  
Quan Ji ◽  
Yu Hui Zhang ◽  
Yan Zhi Xia
Keyword(s):  
Magnetron Sputtering ◽  
Cross Section ◽  
Deposition Rate ◽  
Rf Magnetron Sputtering ◽  
Regenerated Cellulose ◽  
Nanoscale Particles ◽  
Fluorocarbon Films ◽  
Substrate Distance ◽  
Optimal Target ◽  
Deposited Films

The target-substrate distance has a significant effect on the morphology and the relative deposition rate of fluorocarbon films deposited by RF magnetron sputtering. The films were deposited on regenerated cellulose substrate using a polytetrafluoroethylene (PTFE) target, with argon as the working gas. The surface and fracture cross-section morphologies of the deposited films were examined by scanning electron microscopy (SEM). The average thickness of the fluorocarbon films and the relative deposition rates were calculated for varying target-substrate distances. The films had island-like structures composed of nanoscale particles, and the surfaces were not flat. The density of the particles increased and their size decreased with increase of the target-substrate distance in the range 30 to 80 mm. The relative deposition rate increased at first and then decreased with increased target-substrate distance: the optimal target-substrate distance was 50-60 mm.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Influence of Substrate on Structure and Magnetic Properties of Bi0.9Nd0.1FeO3 Thin Films by Radio Frequency Magnetron Sputtering Method

2013 ◽  
Vol 302 ◽  
pp. 146-150
Author(s):  
L.L. Li ◽  
Qiu Xiang Liu ◽  
Yan Zou ◽  
Xin Gui Tang ◽  
Yan Ping Jiang
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Cross Section ◽  
Rf Magnetron Sputtering ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure Morphology ◽  
Influence Of Substrate

Bi0.9Nd0.1FeO3 (BNFO) films were deposited on Si (100) and (La,Sr)(Al,Ta)O3 (100) (LAST) substrate by radio frequency (RF) magnetron sputtering method respectively. The structure，morphology and magnetic properties were studied. X-ray diffraction (XRD) result indicates that the BNFO films on different substrate adopted different orientation. Cross-section scanning electron microscopy shows that the film thickness is 145 nm．Magnetic properties measurement shows that the film on Si(100) substrate has the larger saturation magnetization (Ms) of 3 686 emu/cm3, while the Ms value of the BNFO films on LSAT(100) substrate is only 1 213 emu/cm3.

Effect of Argon Gas Pressure on Optical Properties of Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering Technique

2014 ◽  
Vol 904 ◽  
pp. 205-208
Author(s):  
J.H. Gu ◽  
Z.Y. Zhong ◽  
S.B. Chen ◽  
C.Y. Yang ◽  
J. Hou
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Argon Gas ◽  
Deposited Films

Zinc oxide (ZnO) thin films were deposited by radio frequency (RF) magnetron sputtering technique on glass substrates in pure argon gas. The optical transmission stectra of the films were measured by ultraviolet-visible spectrophotometer. The effects of argon gas pressure on optical properties of the deposited films were investigated. The optical band-gap of the films was evaluated in terms of the Taucs law. The results show that the argon gas pressure has slightly affected the optical band-gap of the deposited films. Furthermore, the refractive index and extinction coefficient of the films were determined by means of the optical characterization methods. Meanwhile, the dispersion behavior of the refractive index was studied by the single-oscillator model of Wemple and DiDomenico, and the physical parameters of the average oscillator strength, average oscillator wavelength, oscillator energy, the refractive index dispersion parameter and the dispersion energy were obtained.

Photoluminescence and Structural Properties of Si Nanoparticles Embedded in SiO2 Matrix by Reactive RF Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 2074-2076
Author(s):  
K. Ma ◽  
Jia You Feng
Keyword(s):  
Magnetron Sputtering ◽  
Structural Properties ◽  
Near Infrared ◽  
Silicon Oxide ◽  
Rf Magnetron Sputtering ◽  
Sio2 Matrix ◽  
Si Nanoparticles ◽  
Oxide Matrix ◽  
Reactive Rf Magnetron Sputtering ◽  
Deposited Films

In the present work, we investigate the photoluminescence (PL) and structural properties of Si nanoparticles embedded in SiO2 matrix. Si-rich silicon oxide (SRSO) films with Si concentration of 39% were synthesized by reactive RF magnetron sputtering. Annealing was performed at temperatures between 600°C and 1100°C in N2 ambient for 2h to precipitate Si nanoparticles from oxide matrix. Near infrared photoluminescence around 750nm can be clearly observed even in the as-deposited films, which indicates the existence of Si nanoparticles in films. The structural properties were analyzed by infrared absorption and Raman spectra. It is found that the structural properties strongly affect the PL properties of Si nanoparticles embedded in SiO2 matrix.

Preparation and UV Absorption Property of Hybrid Fluorocarbon/ZnO Thin Films Deposited by RF Magnetron Sputtering

2010 ◽  
Vol 143-144 ◽  
pp. 792-796 ◽  
Author(s):  
Yu Hui Zhang ◽  
Quan Ji ◽  
Zeng Ji Liu
Keyword(s):  
Magnetron Sputtering ◽  
Polymer Films ◽  
Rf Magnetron Sputtering ◽  
Uv Absorption ◽  
Hybrid Films ◽  
Fluorocarbon Films ◽  
Poly Ethylene Terephthalate ◽  
Fluorocarbon Polymer ◽  
Poly Ethylene ◽  
The Individual

Nanowire-mesoporous network structured fluorocarbon polymer films were prepared by radio-frequency (RF) magnetron sputtering of a polytetrafluoroethylene (PTFE) target on a poly(ethylene terephthalate) (PET) substrate. The fluorocarbon films were used as precursor materials to prepare fluorocarbon/ZnO double-layered hybrid films by reaction sputtering of a Zn target on the fluorocarbon films. The hybrid films had strong UV absorption that was far larger than the sum of the individual absorptions of fluorocarbon film and ZnO film because of a synergistic effect. The hybrid films exhibited multi-enhanced ultraviolet absorption due to the π-conjugated molecular structure, the nanoparticle-mesoporous reflection of fluorocarbon polymer films, and the absorption effect of nanosized ZnO particles.

The Effect of Target to Substrate Distance on the Properties of HAZO Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 685 ◽  
pp. 134-140 ◽  
Author(s):  
Wei Ming Lu ◽  
Jun Zhang ◽  
Hong Wei Diao ◽  
Lei Zhao ◽  
Wen Jing Wang
Keyword(s):  
Residual Stress ◽  
Grain Size ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Systematic Study ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Substrate Distance ◽  
Doped Zno

Hydrogen doped AZO films (HAZO) were prepared by RF magnetron sputtering. A systematic study of the effect of substrate to target distance (Dst) on the structural, electrical and optical properties of the as-grown HAZO films was carried out. Compared with the Al-doped ZnO films, the hydrogen in the atmosphere influenced the growth of the films by incorporating in the films and bombarding the surface of the film, namely, the Dst, which induced the residual stress and the roughness of the films decreasedwith an increase of the Dst. The films showed a smaller grain size. The surfacework function of the films changed with the composition of the films, reaching a maximum at 7.5cm.

Influence of Deposition Parameters on Surface Texturing of ZnO:Al Films Prepared by In-line RF Magnetron Sputtering

2009 ◽  
Vol 1210 ◽  
Author(s):  
Jun-Sik Cho ◽  
Young-Jin Kim ◽  
Jeong Chul Lee ◽  
Sang-Hyun Park ◽  
Kyung Hoon Yoon
Keyword(s):  
Magnetron Sputtering ◽  
Scattered Light ◽  
Incident Light ◽  
Rf Magnetron Sputtering ◽  
Wet Etching ◽  
Visible Range ◽  
Silicon Thin Film ◽  
Working Pressure ◽  
Deposition Parameters ◽  
Deposited Films

AbstractA systematic study on the effect of sputtering deposition parameters on material properties of Al doped ZnO (ZnO:Al) films prepared by an in-line rf magnetron sputtering and on surface morphology of the films after wet etching process was carried out. For application to silicon thin film solar cells as a front electrode, the as-deposited films were surface-textured by a dilute HCl solution to improve the light scattering properties such as haze and angle resolved distribution of scattered light on the film surfaces. The microstructure of as-deposited films is affected significantly by the working pressure and film compactness decreases with increasing working pressure from 1.5 mTorr to 10 mTorr. High quality ZnO:Al films with electrical resistivity of 4.25 × 10-4 Ω cm and optical transmittance of 80% in a visible range are obtained at low working pressure of 1.5 mTorr and substrate temperature of 100℃. Crater-like surface morphologies are observed on the textured ZnO:Al films after wet etching. The size and shape of craters are closely dependent on the microstructure and film compactness of as-deposited films. Haze values of the textured ZnO:Al films are improved in a whole wavelength of 300 – 1100 nm compared to commercial SnO2:F films (Asahi U type) and incident light on the textured films is scattered effectively with 30° angle.

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