Photoluminescence and Structural Characteristics of SnO2 Nanopetals Synthesized by Thermal Evaporation

2010 ◽  
Vol 152-153 ◽  
pp. 697-701
Author(s):  
Bing Wang ◽  
Ling Li
Keyword(s):  
Room Temperature ◽  
Thermal Evaporation ◽  
Structural Characteristics ◽  
The Self ◽  
Silicon Substrates ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Sno2 Nanostructure

A new nanostructure, (2D) nanopetal of SnO2, has been grown on single silicon substrates by Au-Ag alloying catalyst assisted carbothermal evaporation of SnO2. Field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD) and Raman are employed to identify the morphology and structure of the synthesized productions. Room-temperature photoluminescence (PL) is used to characterize the luminescence of SnO2 nanostructure. Three new peaks at 356, 450 and 489 nm in the measured photoluminescence spectra are observed, implying that more luminescence centers exist in SnO2 nanopetals due to nanocrystals and defects. The growth of the SnO2 nanopetals is discussed on the basis of the self-catalyst mechanism.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

Mn, Cu Doping and Optical Properties of Highly Crystalline Ultralong ZnS Nanowires

2007 ◽  
Vol 31 ◽  
pp. 114-116 ◽  
Author(s):  
N.D. Chien ◽  
H.V. Chung ◽  
P.T. Huy ◽  
Do Jin Kim ◽  
Maurizio Ferrari
Keyword(s):  
Room Temperature ◽  
Doping Concentration ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
Cu Doping ◽  
Mn Doping ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Single Crystal Structures ◽  
Scanning Electron

Manganese (Mn) and copper (Cu) doping of ZnS nanowires was achieved by thermal evaporation of Mn, Cu doped ZnS nanopowders. Field emission scanning electron microscopy, and X-ray diffraction studies of the obtained ZnS nanowires demonstrate that the nanowires are single crystal structures and have diameters about 30-200 nm and lengths up to 1 millimeter. Room temperature photoluminescence (PL) measurements show a common PL peak around 520 nm for all ZnS nanowires samples, while impurity-related emission band are observed in doped ZnS nanowires. The dependence of the PL intensity on Mn doping concentration has also been investigated. It is shown that for high Mn doping concentration (10%) in the starting ZnS nanopowders, new emission bands (orange-red and red bands) are observed from the ZnS:Mn nanowires products. The origins of these new emission bands are discussed and brought up for further discussion.

Preparation and Photoluminescence of In2O3 Nanofibers by Electrospinning

2011 ◽  
Vol 412 ◽  
pp. 49-52
Author(s):  
Ya Wei Hu ◽  
Hui Rong He ◽  
Yang Min Ma
Keyword(s):  
Room Temperature ◽  
Deep Level ◽  
Sol Gel ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
Electrospinning Technique ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Indium Nitrate ◽  
Gel Processing

Ultra-thin fibers of indium oxide (In2O3) were prepared by sol-gel processing and the electrospinning technique using polyvinylpyrrolidone (PVP) and indium nitrate as precursors. The fibers were characterized by the thermogravimetric analysis, scanning electron microscopy, X-ray diffraction and room temperature photoluminescence spectra. It was observed that the In2O3 nanofibers exhibited photoluminescence peaks centered at 526 and 590 nm, corresponding to the defeat-related deep-level emission.

scholarly journals Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Room Temperature ◽  
Excess Oxygen ◽  
Ambient Atmosphere ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission ◽  
Oxygen Ion ◽  
Integrated Intensity ◽  
Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

ROOM TEMPERATURE PHOTOLUMINESCENCE OF POLYCRYSTALLINE SIC PREPARED FROM CARBON-SATURATED SI MELT

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1047-1051
Author(s):  
JIANPING MA ◽  
ZHIMING CHEN ◽  
GANG LU ◽  
MINGBIN YU ◽  
LIANMAO HANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Uv Light ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Composition And Structure ◽  
Light Excitation ◽  
Scanning Electron

Intense photoluminescence (PL) has been observed at room temperature from the polycrystalline SiC samples prepared from carbon-saturated Si melt at a temperature ranging from 1500 to 1650°C. Composition and structure of the samples have been confirmed by means of X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. PL measurements with 325 nm UV light excitation revealed that the room temperature PL spectrum of the samples consists of 3 luminescent bands, the peak energies of which are 2.38 eV, 2.77 eV and 3.06 eV, respectively. The 2.38 eV band is much stronger than the others. It is suggested that some extrinsic PL mechanisms associated with defect or interface states would be responsible to the intensive PL observed at room temperature.

Growth mechanism and characterization of ZnO nano-tubes synthesized using the hydrothermal-etching method

2009 ◽  
Vol 63 (6) ◽  
Author(s):  
Yan Li ◽  
Chuan-Sheng Liu ◽  
Yun-Ling Zou
Keyword(s):  
Room Temperature ◽  
Morphological Analysis ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Etching Method ◽  
Nano Rods ◽  
Two Stages

AbstractZnO nano-tubes (ZNTs) have been successfully synthesized via a simple hydrothermal-etching method, and characterized by X-ray diffraction, field emission scanning electron microscopy and room temperature photoluminescence measurement. The as-synthesized ZNTs have a diameter of 500 nm, wall thickness of 20–30 nm, and length of 5 µm. Intensity of the plane (0002) diffraction peak, compared with that of plane (10$$ \bar 1 $$0) of ZNTs, is obviously lower than that of ZnO nano-rods. This phenomenon can be caused by the smaller cross section of plane (0002) of the nano-tubes compared with that of other morphologies. On basis of the morphological analysis, the formation process of nano-tubes can be proposed in two stages: hydrothermal growth and reaction etching process.

scholarly journals Compositional Dependence of Structural Properties of Prepared Alloys and Films

2011 ◽  
Vol 2011 ◽  
pp. 1-6
Author(s):  
M. F. A. Alias ◽  
A. A. J. Al-Douri ◽  
E. M. N. Al-Fawadi ◽  
A. A. Alnajjar
Keyword(s):  
Room Temperature ◽  
Thermal Evaporation ◽  
High Accuracy ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Good Agreement

Results of a study of alloys and films with various Pb content have been reported and discussed. Films of of thickness 1.5 μm have been deposited on glass substrates by flash thermal evaporation method at room temperature, under vacuum at constant deposition rate. These films were annealed under vacuum around 10−6Torr at different temperatures up to 523 K. The composition of the elements in alloys was determined by standard surfaces techniques such as atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF), and the results were found of high accuracy and in very good agreement with the theoretical values. The structure for alloys and films is determined by using X-ray diffraction. This measurement reveals that the structure is polycrystalline with cubic structure and there are strong peaks at the direction (200) and (111). The effect of heat treatment on the crystalline orientation, relative intensity, and grain size of films is presented.

Hydrothermal Syntheses, Crystal Structures, and Luminescent Properties of Two MnII Coordination Polymers: From Two-Fold Interpenetrated pcu Topological Net to Polycatenated 2D+2D→3D Framework

2015 ◽  
Vol 68 (2) ◽  
pp. 322 ◽  
Author(s):  
Wenlong Liu ◽  
Mengqiang Wu ◽  
Xueying Wang ◽  
Wei Wang ◽  
Dayu Liu ◽  
...  
Keyword(s):  
Dicarboxylic Acid ◽  
Coordination Polymers ◽  
Self Assembly ◽  
Room Temperature ◽  
Luminescent Properties ◽  
The Self ◽  
X Ray Diffraction ◽  
X Ray ◽  
3D Framework ◽  
Dimethyl Benzene

Using a hydrothermal synthesis, the self-assembly of MnII ions and 1,4-bis(1-imidazol-yl)-2,5-dimethyl benzene with two dicarboxylate ligands, 2-nitrobenzene-1,4-dicarboxylic acid (2-H2ata) and 5-methylbenzene-1,3-dicarboxylic acid (5-CH3-H2ip) constructed two interesting coordination polymers: [Mn(2-ata)(bimb)]n (1) and {[Mn(5-CH3-ip)(bimb)1.5]·2H2O}n (2), where bimb refers to 1,4-bis(1-imidazol-yl)-2,5-dimethyl benzene. Their structures were determined by single-crystal X-ray diffraction, elemental analysis, and infrared spectroscopy. Complex 1 exhibits a 2-fold interpenetrated pcu net. Complex 2 shows an unusual polycatenated 2D+2D→3D framework. In addition, the solid-state photoluminescent properties of 1 and 2 were investigated at room temperature.

Fabrication and Hydrogen Sensing Property of In2O3 Nanotowers

2013 ◽  
Vol 834-836 ◽  
pp. 913-916
Author(s):  
Zhao Qiang Zheng ◽  
Huan Yu Wu ◽  
Bing Wang
Keyword(s):  
Self Assembly ◽  
Thermal Evaporation ◽  
Sensor Response ◽  
The Self ◽  
X Ray Diffraction ◽  
Excellent Performance ◽  
X Ray ◽  
Hydrogen Sensing ◽  
Morphology And Structure ◽  
Prepared Nanorods

In2O3nanotowers have been fabricated on Au item-shaped parallel electrodes using thermal evaporation of the mixed powders of In2O3and graphite with Au catalysts. The morphology and structure of the prepared nanorods are determined on the basis of field-emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). The self-assembly grown sensors of In2O3nanotowers have excellent performance in sensor response to hydrogen concentration of 1000 ppm under operated temperature of 300°C.

Phosphorus Passivation of GaAs

1998 ◽  
Vol 510 ◽  
Author(s):  
S.P. Watkins ◽  
X. Xu ◽  
J. Hu ◽  
R. Ares ◽  
P. Yeo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Thin Layers ◽  
Difference Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Reflectance Difference Spectroscopy ◽  
Similar Chemical ◽  
Pl Intensity ◽  
Undoped Gaas

AbstractWe have performed a systematic study of the effect of various phosphorus passivation techniques on the room temperature photoluminescence (PL) intensity of undoped GaAs. The effects of passivation by two methods are compared: (1) the P-exchange reaction on exposure to tertiarybutylphosphine (TBP) vapour between 500-620°C, and (2) the growth of thin layers of GaP directly on GaAs. An x-ray diffraction technique was used to estimate the thickness of the passivating layers. Reflectance difference spectroscopy indicated a similar chemical origin for the two passivation methods. Both passivation techniques resulted in strong enhancements in the room temperature PL. PL intensity was observed to increase very rapidly with adsorbed P for both cases saturating at approximately 2 monolayers equivalent GaP coverage.

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